• Title/Summary/Keyword: Oxide power

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Study on the glass-ceramics containing coal bottom ashes fabricated by 2-stages heat treatment method (2단계 열처리법으로 제조된 석탄바닥재가 주성분인 결정화 유리에 관한 연구)

  • Jo, Si-Nae;Kang, Seung-Gu
    • Journal of the Korean Crystal Growth and Crystal Technology
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    • v.20 no.6
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    • pp.272-277
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    • 2010
  • The glass-ceramics containing bottom ash (B/A) which was a by-produced from an electrical power plant was fabricated and its crystalline phase, microstructure and mechanical properties were analyzed. At first, the glass was fabricated by adding modifier oxide $Li_2O$ to lower the melting temperature of coal bottom ash. The glass obtained was heat-treated by using a 2-stage process to crystallize, that is to say, to increase the degree of crystallization in the glass-ceramics, the first heat treatment for nucleation was performed followed by the secondary one for the growth of nucleates. The main crystalline phase formed in the glass-ceramics was ${\beta}$-spodumene and the secondary phase was $L_2SiO_3$. It was recognized that the degree of crystallization of glass-ceramics was increased with a holding time of the secondary heat treatment stage. In the case of the specimens hold up to 3 hour, the crystallization was not completed and the microstructures and morphologies of crystalline phase were not uniform. In the specimens of holding time over 9 hours, the cracks were generated inside of it, so its compressive strength would decrease due them. In conclusion, it was able to obtain the optimum condition to fabriate the glass-ceramics having the properties of high crystallization degree, uniform microstructures and morphologies and the high mechanical strength.

Soil-Water Characteristic Curve of Sandy Soils Containing Biopolymer Solution (바이오폴리머를 포함한 모래지반의 흙-습윤 특성곡선 연구)

  • Jung, Jongwon
    • Journal of the Korean GEO-environmental Society
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    • v.19 no.10
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    • pp.21-26
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    • 2018
  • Soil-water characteristic curve, which is called soil retention curve, is required to explore water flows in unsaturated soils, relative permeability of water in multi-phase fluids flow, and change to stiffness and volume of soils. Thus, the understanding of soil-water characteristic curves of soils help us explore the behavior of soils inclduing fluids. Biopolymers are environmental-friendly materials, which can be completely degraded by microbes and have been believed not to affect the nature. Thus, various biopolymers such as deacetylated power, polyethylene oxide, xanthan gum, alginic acid sodium salt, and polyacrylic acid have been studies for the application to soil remediation, soil improvement, and enhanced oil recovery. PAA (polyacrylic acid) is one of biopolymers, which have shown a great effect in enhanced oil recovery as well as soil remediation because of the improvement of water-flood performance by mobility control. The study on soil-water characteristic curves of sandy soils containing PAA (polyacrylic acid) has been conducted through experimentations and theoretical models. The results show that both capillary entry pressure and residual water saturation dramatically increase according to the increased concentration of PAA (polyacrylic acid). Also, soil-water characteristic curves by theoretical models are quite well consistent with the results by experimental studies. Thus, soil-water characteristic curves of sandy soils containing biopolymers such as PAA (polyacrylic acid) can be estimated using fitting parameters for the theoretical model.

Plasma Etching Characteristics of Sapphire Substrate using $BCl_3$-based Inductively Coupled Plasma ($BCl_3$ 계열 유도결합 플라즈마를 이용한 사파이어 기판의 식각 특성)

  • Kim, Dong-Pyo;Woo, Jong-Chang;Um, Doo-Seng;Yang, Xue;Kim, Chang-Il
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2008.11a
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    • pp.363-363
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    • 2008
  • The development of dry etching process for sapphire wafer with plasma has been key issues for the opto-electric devices. The challenges are increasing control and obtaining low plasma induced-damage because an unwanted scattering of radiation is caused by the spatial disorder of pattern and variation of surface roughness. The plasma-induced damages during plasma etching process can be classified as impurity contamination of residual etch products or bonding disruption in lattice due to charged particle bombardment. Therefor, fine pattern technology with low damaged etching process and high etch rate are urgently needed. Until now, there are a lot of reports on the etching of sapphire wafer with using $Cl_2$/Ar, $BCl_3$/Ar, HBr/Ar and so on [1]. However, the etch behavior of sapphire wafer have investigated with variation of only one parameter while other parameters are fixed. In this study, we investigated the effect of pressure and other parameters on the etch rate and the selectivity. We selected $BCl_3$ as an etch ant because $BCl_3$ plasmas are widely used in etching process of oxide materials. In plasma, the $BCl_3$ molecule can be dissociated into B radical, $B^+$ ion, Cl radical and $Cl^+$ ion. However, the $BCl_3$ molecule can be dissociated into B radical or $B^+$ ion easier than Cl radical or $Cl^+$ ion. First, we evaluated the etch behaviors of sapphire wafer in $BCl_3$/additive gases (Ar, $N_2,Cl_2$) gases. The behavior of etch rate of sapphire substrate was monitored as a function of additive gas ratio to $BCl_3$ based plasma, total flow rate, r.f. power, d.c. bias under different pressures of 5 mTorr, 10 mTorr, 20 mTorr and 30 mTorr. The etch rates of sapphire wafer, $SiO_2$ and PR were measured with using alpha step surface profiler. In order to understand the changes of radicals, volume density of Cl, B radical and BCl molecule were investigated with optical emission spectroscopy (OES). The chemical states of $Al_2O_3$ thin films were studied with energy dispersive X-ray (EDX) and depth profile anlysis of auger electron spectroscopy (AES). The enhancement of sapphire substrate can be explained by the reactive ion etching mechanism with the competition of the formation of volatile $AlCl_3$, $Al_2Cl_6$ or $BOCl_3$ and the sputter effect by energetic ions.

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Characteristics of 32 × 32 Photonic Quantum Ring Laser Array for Convergence Display Technology (디스플레이 융합 기술 개발을 위한 32 × 32 광양자테 레이저 어레이의 특성)

  • Lee, Jongpil;Kim, Moojin
    • Journal of the Korea Convergence Society
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    • v.8 no.5
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    • pp.161-167
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    • 2017
  • We have fabricated and characterized $32{\times}32$ photonic quantum ring (PQR) laser arrays uniformly operable with $0.98{\mu}A$ per ring at room temperature. The typical threshold current, threshold current density, and threshold voltage are 20 mA, $0.068A/cm^2$, and 1.38 V. The top surface emitting PQR array contains GaAs multiquantum well active regions and exhibits uniform characteristics for a chip of $1.65{\times}1.65mm^2$. The peak power wavelength is $858.8{\pm}0.35nm$, the relative intensity is $0.3{\pm}0.2$, and the linewidth is $0.2{\pm}0.07nm$. We also report the wavelength division multiplexing system experiment using angle-dependent blue shift characteristics of this laser array. This photonic quantum ring laser has angle-dependent multiple-wavelength radial emission characteristics over about 10 nm tuning range generated from array devices. The array exhibits a free space detection as far as 6 m with a function of the distance.

The Post Annealing Effect of Organic Thin Film Solar Cells with P3HT:PCBM Active Layer (P3HT:PCBM 활성층을 갖는 유기 박막태양전지의 후속 열처리 효과)

  • Jang, Seong-Kyu;Gong, Su-Cheol;Chang, Ho-Jung
    • Journal of the Microelectronics and Packaging Society
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    • v.17 no.2
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    • pp.63-67
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    • 2010
  • The organic solar cells with Glass/ITO/PEDOT:PSS/P3HT:PCBM/Al structure were fabricated using regioregular poly (3-hexylthiophene) (P3HT) polymer:(6,6)- phenyl $C_{61}$-butyric acid methyl ester (PCBM) fullerene polymer as the bulk hetero-junction layer. The P3HT and PCBM as the electron donor and acceptor materials were spin casted on the indium tin oxide (ITO) coated glass substrates. The optimum mixing concentration ratio of photovoltaic layer was found to be P3HT:PCBM = 4:4 in wt%, indicating that the short circuit current density ($J_{SC}$), open circuit voltage ($V_{OC}$), fill factor (FF) and power conversion efficiency (PCE) values were about 4.7 $mA/cm^2$, 0.48 V, 43.1% and 0.97%, respectively. To investigate the effects of the post annealing treatment, as prepared organic solar cells were post annealed at the treatment time range from 5min to 20min at $150^{\circ}C$. $J_{SC}$ and $V_{OC}$ increased with increasing the post annealing time from 5min to 15min, which may be originated from the improvement of the light absorption coefficient of P3HT and improved ohmic contact between photo voltaic layer and Al electrode. The maximum $J_{SC},\;V_{OC}$, FF and PCE values of organic solar cell, which was post annealed for 15min at $150^{\circ}C$, were found to be about 7.8 $mA/cm^2$, 0.55 V, 47% and 2.0%, respectively.

The Effect of Ag thickness on Optical and Electrical Properties of V2O5/Ag/ITO Multilayer (Ag의 두께에 따른 V2O5/Ag/ITO 구조의 다층 박막의 광학적, 전기적 특성)

  • Ko, Younghee;Park, Gwanghoon;Ko, Hang-Ju;Ha, Jun-Seok
    • Journal of the Microelectronics and Packaging Society
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    • v.21 no.1
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    • pp.7-11
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    • 2014
  • Recently, the buffer layers consisting of poly (3,4-ethylenedioxythiophene): poly (styrenesulfonate) (PEDOT-PSS) are extensively used to improve power conversion efficiency (PCE) of organic solar cells. However, PEDOT-PSS is not suitable for mass production of organic solar cells due to its intrinsic acid and hygroscopic properties. Moreover, because of chemical reactions between indium tin oxide (ITO) layer and PEDOT-PSS layer, the interface is not stable. For these reasons, alternative materials such as $V_2O_5$ have been developed to be an effective buffer layer. In this work, we used $V_2O_5$/Ag/ITO multilayer structure for the anode buffer layer. With variation of thickness of Ag layer, we investigated the optical and electrical properties of $V_2O_5$/Ag/ITO multi-layer films. As a result, we found that the electrical properties were improved with increasing Ag thickness while optical transmittance decreases in visible wavelength region. From the calculation of figure of merit (FOM) which is used to evaluate proper structure for transparent of optoelectronic, $V_2O_5$/Ag/ITO multilayer electrode was optimized with 4 nm thick Ag layer in optical (88% in transmittance) and electrical ($4{\times}10^{-4}{\Omega}cm$) properties. This indicates that $V_2O_5$/Ag/ITO multilayer electrode could be a candidate for the anode of optoelectronic devices.

Total Polyphenol Content and Antioxidative Activity of Wild Grape (Vitis coignetiae) Extracts Depending on Ethanol Concentrations (에탄올 농도에 따른 머루(Wild Grape, Vitis coignetiae) 추출물의 폴리페놀 함량 및 항산화 활성)

  • Jeong, Hyun-Jin;Park, Seon-Bin;Kim, Sun-A;Kim, Hyun-Ku
    • Journal of the Korean Society of Food Science and Nutrition
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    • v.36 no.12
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    • pp.1491-1496
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    • 2007
  • As an oriental medicinal plant, wild grape (WG, Vitis coignetiae) has been known to contain abundant nutrients compared to grape (Vitis vinifera L.) and as a source of stilbenes, a kind of polyphenol. This study was performed to investigate the antioxidative activity of WG extracts by measuring electron donating ability (EDA), nitrite scavenging ability (NSA), super oxide dismutase (SOD)-like activity and total polyphenol content (TPC). The extracts were obtained using microwave-assisted extraction (microwave power: 90 W, extraction time: 5 min, extractant: water, 50 and 100% ethanol). EDAs, SOD-like activities and TPCs were the highest at 50% ethanol extracts while conversely lowest at 100% ethanol extracts. EDAs of 50% and 100% ethanol extracts at 1.6 g/dL concentration, $97.70{\pm}0.55\;and\;98.05{\pm}0.36%$, were higher than those of 0.1 and 1% L-ascorbic acids, $101.44{\pm}0.98%\;and\;99.43{\pm}0.78%$, respectively. At the concentration of 1.6 g/dL, 50% ethanol extract showed lower NSA (pH 1.2) than water extract unlike EDA, TPC and SOD-like activity. Regarding TPCs of WG extracts, the activities were the highest at 50% ethanol extracts (1.6 g/dL: $38.76{\pm}0.23$ mM gallic acid equiv.) followed by water and 100% ethanol extracts. The results suggest the usefulness of developing functional foods using antioxidative active compounds of WG with high polyphenol contents.

A Study of Cold Flow Characteristics of a Flue Gas Recirculation Burner using Coanda Nozzles (코안다 노즐을 이용한 배기가스 재순환 버너의 냉간 유동 특성에 관한 연구)

  • Ha, Ji Soo;Park, Chan Hyuk;Shim, Sung Hun;Jung, Sang Hyun
    • Journal of Energy Engineering
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    • v.25 no.4
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    • pp.152-158
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    • 2016
  • Nitrogen oxide is generated by the chemical reaction of oxygen and nitrogen in higher temperature environment of combustion facilities. The NOx reduction equipment is generally used in the power plant or incineration plant and it causes enormous cost for the construction and maintenance. The flue gas recirculation method is commonly adopted for the reduction of NOx formation in the combustion facilities. In the present study, the computational fluid dynamic analysis was accomplished to elucidated the cold flow characteristics in the flue gas recirculation burner with coanda nozzles in the flue gas recirculation pipe. The inlet and outlet of flue gas recirculation pipes are directed toward the tangential direction of circular burner not toward the center of burner. The swirling flow is formed in the burner and it causes the reverse flow in the burner. The ratio of flue gas recirculation flow rate with the air flow rate was about 2.5 for the case with the coanda nozzle gap, 0.5mm and it was 1.5 for the case with the gap, 1.0mm. With the same coanda nozzle gap, the flue gas recirculation flow rate ratio had a little increase when the air flow rate changes from 1.1 to 2.2 times of ideal air flow rate.

Dependency of Phonon-limited Electron Mobility on Si Thickness in Strained SGOI (Silicon Germanium on Insulator) n-MOSFET (Strained SGOI n-MOSFET에서의 phonon-limited전자이동도의 Si두께 의존성)

  • Shim Tae-Hun;Park Jea-Gun
    • Journal of the Institute of Electronics Engineers of Korea SD
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    • v.42 no.9 s.339
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    • pp.9-18
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    • 2005
  • To make high-performance, low-power transistors beyond the technology node of 60 nm complementary metal-oxide-semiconductor field-effect transistors(C-MOSFETs) possible, the effect of electron mobility of the thickness of strained Si grown on a relaxed SiGe/SiO2/Si was investigated from the viewpoint of mobility enhancement via two approaches. First the parameters for the inter-valley phonon scattering model were optimized. Second, theoretical calculation of the electronic states of the two-fold and four-fold valleys in the strained Si inversion layer were performed, including such characteristics as the energy band diagrams, electron populations, electron concentrations, phonon scattering rate, and phonon-limited electron mobility. The electron mobility in an silicon germanium on insulator(SGOI) n-MOSFET was observed to be about 1.5 to 1.7 times higher than that of a conventional silicon on insulator(SOI) n-MOSFET over the whole range of Si thickness in the SOI structure. This trend was good consistent with our experimental results. In Particular, it was observed that when the strained Si thickness was decreased below 10 nm, the phonon-limited electron mobility in an SGOI n-MOSFT with a Si channel thickness of less than 6 nm differed significantly from that of the conventional SOI n-MOSFET. It can be attributed this difference that some electrons in the strained SGOI n-MOSFET inversion layer tunnelled into the SiGe layer, whereas carrier confinement occurred in the conventional SOI n-MOSFET. In addition, we confirmed that in the Si thickness range of from 10 nm to 3 nm the Phonon-limited electron mobility in an SGOI n-MOSFET was governed by the inter-valley Phonon scattering rate. This result indicates that a fully depleted C-MOSFET with a channel length of less than 15 m should be fabricated on an strained Si SGOI structure in order to obtain a higher drain current.

Combined Removal of n-heptane and CO using Plasma-catalytic Process (플라즈마/촉매 공정을 이용한 n-헵테인과 일산화탄소 동시제거)

  • Lee, Sang Baek;Jo, Jin Oh;Mok, Young Sun
    • Journal of the Korean Institute of Gas
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    • v.20 no.2
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    • pp.1-9
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    • 2016
  • Combined removal of n-heptane and carbon monoxide (CO) using a plasma-catalytic process was investigated. The performance of the plasma-catalytic process was compared with that of the catalyst-alone process to characterize the decomposition of n-heptane and CO with the operation parameters such as the type of catalyst, reaction temperature, and discharge power. From several sets of experiments, it was found that the decomposition efficiency of n-heptane mainly depended on the specific input energy rather than the reactor temperature, whereas the oxidation of CO on both the energy density and the reaction temperature. The results conducted over several metal oxide catalysts exhibited that the decomposition efficiency of n-heptane was in the order: $Pd/{\gamma}-Al_2O_3$ > $Ru/{\gamma}-Al_2O_3{\approx}Ag/{\gamma}-Al_2O_3$. Especially, $Pd/{\gamma}-Al_2O_3$ catalyst did hardly generate CO as a byproduct during the decomposition of n-heptane under an appropriate condition, revealing $CO_2$ selectivity of nearly 100%. The CO oxidation efficiency was largely affected by the type of catalyst ($Pd/{\gamma}-Al_2O_3$ > $Ru/{\gamma}-Al_2O_3$ > $Ag/{\gamma}-Al_2O_3$). At temperatures below $180^{\circ}C$, the plasma-catalytic process was more effective in the oxidation of CO, while above $180^{\circ}C$, the catalytic process resulted in slightly higher CO oxidation efficiency.