• 한국정보디스플레이학회:학술대회논문집
• /
• 2009.10a
• /
• pp.294-297
• /
• 2009

We computationally investigated the effects of oxygen and alkaline-earth on the emission wavelength of the $Eu^{2+}$-doped oxide phosphor. Using QSPR method, we found that the oxygen and alkaline-earth atom around the Eu atom increase and decrease the emission wavelength, respectively. We also investigated the $Eu^{2+}$-doped sulfide, nitride, and oxynitride phosphors.

• 한국정보디스플레이학회:학술대회논문집
• /
• 2007.08b
• /
• pp.1356-1359
• /
• 2007

• 한국정보디스플레이학회:학술대회논문집
• /
• 2004.08a
• /
• pp.575-578
• /
• 2004

The charging tendency of $Zn_2SiO_4:Mn^{2+}$ phosphor surface was modified in order to improve discharging characteristic of green cell in an ac-plasma display panel (ac-PDP). The Zinc-silicate ($Zn_2SiO_4:Mn^{2+}$) green-emitting phosphor was coated with magnesium oxide(MgO), which is viable to have positive charge on the surface. After fabricating the green cell with MgO-coated $Zn_2SiO_4:Mn^{2+}$, the electrical and optical properties in the cell were examined. It was found that the dynamic voltage margin could be increased while the address time was reduced. It may be ascribed to the change of charging tendency of $Zn_2SiO_4:Mn^{2+}$ phosphor by MgO coating, which makes it possible to stable wall-charge accumulation. When $Zn_2SiO_4:Mn^{2+}$ phosphor was coated with 1.3wt%-MgO, the address time was reduced 1.2 ${\mu}s$ and the address voltage lowered 25 V without any misfiring problem, compared to those of typical $Zn_2SiO_4:Mn^{2+}$ phosphor layer. The luminescence intensity of green cell using MgO-coated phosphor layer was also improved by 10%.

• Journal of Information Display
• /
• v.2 no.3
• /
• pp.13-17
• /
• 2001

The manganese-doped magnesium tin oxide with spinel structure was selected as a green phosphor for FED application and was synthesized by the solid state reaction. Its luminescence properties were investigated under low-voltage electron excitation. The $Mg_2SnO_4$:Mn phosphor showed green emission with the spectrum centered at 500 nm due to energy transfer from $^4T_1$ to $^6A_1$ of $Mn^{2+}$ ion. Optimum Mn concentration was 0.6 mole % and the decay time was shorter than 10 ms.

• 한국정보디스플레이학회:학술대회논문집
• /
• 2006.08a
• /
• pp.942-945
• /
• 2006

The picture quality of a plasma display panel is very sensitive to the phosphor characteristics such as luminescence, decay time, surface properties, and even longevity of phosphor material in itself. In our previous work, the discharging characteristics in green cell of PDP were demonstrated to be enhanced by coating $Zn_2SiO_4:Mn^{2+}$ phosphors with positively charged metal oxide such as MgO. Here, $Zn_2SiO_4:Mn^{2+}$ phosphors were coated by various metal oxides for examining the coating effect on the picture quality. Specially, longevity while fabricating the panel was investigated for panel application in this work. Also the effects of ion and electron bombardment on the phosphor surface will be discussed in this work.

• 한국정보디스플레이학회:학술대회논문집
• /
• 2006.08a
• /
• pp.33-38
• /
• 2006

An evolutionary optimization process involving genetic algorithm and combinatorial chemistry was employed in an attempt to develop titanate-based red phosphors suitable for tri-color white light emitting diodes We screened a eight-cation oxide system including $(K,Li,Na)_x(Y,Gd,La,Eu)_yTi_zO_{\delta}$ in terms of luminescent efficiency. The combination of genetic algorithm and combinatorial chemistry was proven to enhance the searching efficiency when applied for phosphor screening. As a result, the composition was optimized to be $(Na_{0.92}Li_{0.08})(Y_{0.8}Gd_{0.2})TiO_4:Eu^{3+}$, The luminance of this phosphor was 110 % of that of well-known scheelite variant phosphor at an excitation of 400 nm.

• 한국정보디스플레이학회:학술대회논문집
• /
• 2004.08a
• /
• pp.1091-1094
• /
• 2004

High-luminous efficiency full-color emissions in photoluminescence (PL) were obtained in $GdVO_4$ phosphor thin films co-doped with various amounts of Eu, Er and/or Tm and postannealed at approximately 1000$^{\circ}C$. The $GdVO_4$:Eu,Er,Tm phosphor thin films were deposited on thick $BaTiO_3$ ceramic sheets by r.f. magnetron sputtering using powder targets and postannealed in an air atmosphere. The rare earth (RE) content (RE/(Gd+V+RE) atomic ratio) in the oxide phosphor thin films was varied in the range from 0.1 to 2 at.%. It was found that the excitation of $GdVO_4$:Eu.Er,Tm thin films is attributed to band-to-band transition. A white PL emission was obtained in a $GdVO_4$:Eu,Er,Tm thin film with Eu, Er and Tm contents of 0.2, 0.7 and 1 at.%, respectively: CIE chromaticity color coordinates. (X=0.352 and Y=0.351). In addition, a white emission was obtained in a thin-film electroluminescent (TFEL) device made with this thin film.

• Journal of the Korean Applied Science and Technology
• /
• v.19 no.3
• /
• pp.174-180
• /
• 2002

In recent days, the study of a new phosphorescent phosphor has been performed in order to overcome the defect of sulfide phosphor and increase the brightness and long after-glow characteristic of phosphorescent phosphor. Particularly, sulfide phosphor usually used is so chemically unstable that the study of oxide phosphors are processing. $Eu^{2+}$, $Nd^{3+}$ doped Ba-Al-O phosphors sintered at $600{\sim}1500^{\circ}C$ for 2hours had the PL emission spectrum and after-glow over $1200^{\circ}C$. In this system, as the mole concentration of alumina increases, emission bands of phosphors moved from 500nm to 380nm. The optimum concentration of flux was 5wt% and after-glow characteristics of phosphors were found at the host material molar ratio ($BaCO_{3}:Al_{2}O_{3}$), 1:1 and 1:3.

• 한국정보디스플레이학회:학술대회논문집
• /
• 2000.01a
• /
• pp.145-146
• /
• 2000

Primary emphasis was placed on the electrophoretic deposition of low voltage phosphor to indium-tin oxide-coated glass for the application of field emission display. The phosphor deposited by various parameters, such as deposition time and applied voltages was examined in detail. In addition, a comparison was made by analyzing luminance properties of the phosphor mixed with and without conducting $In_2O_3$ powder of less than 1um size. The measurement was performed as a function of $In_2O_3$ concentration from 3% to 15% by weight. The enhanced impact of indium powder mixing on the phosphor was clearly demonstrated by aging performance curve at 1000V excitation voltages with a current density of $1\;mA/cm^2$

• Bulletin of the Korean Chemical Society
• /
• v.28 no.9
• /
• pp.1467-1471
• /
• 2007

The green-emitting CeMgAl11O19:Tb (CMAT) phosphor has been prepared at 1200 °C by the simple solid-state reaction using AlF3 as a self-flux. This preparation temperature is much lower than those (1500-1700 °C) for conventional solid-state reaction and spray pyrolysis method. In particular, the complete process to produce high-quality phosphor particles was carried out through the single-step heat treatment of the mixture of corresponding oxide-type metal sources. An addition of AlF3 as a self-flux significantly decreased the crystallization temperature of CMAT with plate-like shape. The particle morphology could be controlled from plate-like to spherical by using H3BO3 as an additional flux. Thus, an optimal morphology and luminescence characteristics of CMAT were achieved when both AlF3 and H3BO3 fluxes were simultaneously used. Compared with conventional solid-state process, which is accompanied by the calcination step(s), and other alternative liquid solution techniques such as sol-gel method and spray pyrolysis, no use of active precursors and liquid media that are harmful to the environment is a distinctive advantage for the industrial purpose.