• Proceedings of the KIEE Conference
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• 1998.11c
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• pp.723-725
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• 1998

STI CMP process are substituting gradually for LOCOS(Local Oxidation of Silicon) process to be available below sub-0.5um technology and to get planarized. The other hand, STI CMP process(especially STI CMP with RIE etch back process) has some kinds of defect like Nitride residue, Torn Oxide defect, etc. In this paper, we studied how to reduce Torn Oxide defects after STI CMP with RIE etch back process. Although Torn Oxide defects which occur on Oxide on Trench area is not deep and not sever, Torn oxide defects on Moat area is sometimes very deep and makes the yield loss. We did test on pattern wafers witch go through Trench process, APCVD process, and RIE etch back process by using an REC 472 polisher, IC1000/SUV A4 PAD and KOH base slurry to reduce the number of torn defects and to study what is the root causes of torn oxide defects.

• YAKHAK HOEJI
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• v.19 no.4
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• pp.219-226
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• 1975

Physical and chemical properties on the aging inhibition mechanism of hydrous aluminum oxide were studied by means of dehydration velocity, activation energy, DTA, TGA, IR spectra, X-ray diffraction and TMA. During aging, changes may occur in the hydrous aluminum oxide structure which results in a loss of acid reactivity and in crystal formation to the hydrated hydrous alumina. The results obtained from the X-ray diffraction pattern and DTA, TGA thermogram studies showed that the aging product stabilized with either sorbitol or mannitol was hydrous aluminum oxide ($Al_{2}O_{3}{\cdot}xH_{2}O$) but the aging product not stabilized with either sorbitol or mannitol product not stabilized was hydrated hydrous aluminum oxide $Al_{2}O_{3}{\cdot}xH_{2}O{\cdot}yH_{2}O$. The activation energy of dehydration of the hydrous almina was about 17 Kcal. mol$^{1}$ deg$^{-1}$ which was observed a little less than that of 22 kcal.mol.$^{-1}$ deg.$^{-1}$ of or mannitol, the inhibition mechanism in the aging process from oxide is assumed to prevent the formation of the hydrated hydrous aluminum oxide and the aging process is thought of as analogous to the polymorphic transformations which occur as a system converts to its most stable state.

• 제어로봇시스템학회:학술대회논문집
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• 2003.10a
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• pp.479-482
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• 2003

We propose a real time gas monitoring system for classifying various gases with different concentrations. Using thermal modulation of operating temperature of two sensors, we extract patterns of gases from the voltage across the load resistance. We adopt the relative resistance as a pre-processing method and an ART2 neural network as a pattern recognition method. The proposed method has been implemented in a real time embedded system with tin oxide gas sensors, TGS 2611, 2602 and an MSP430 ultra-low power microcontroller in the test chamber.

• Proceedings of the KIEE Conference
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• 1998.11c
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• pp.770-772
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• 1998

The highest etch rate of Pt film was obtained at 10% $Cl_2$/90% Ar gas mixing ratio in our previous investigation. However, the problems such as the etch residues(fence) remained on the pattern sidewall, low selectivity to oxide as mask and low etch slope were presented. In this paper, the etching by additive $O_2$ gas to 10% $Cl_2$/90% Ar gas base was examined. As a result, the fence-free pattern and high etch slope was observed and the selectivity to oxide increased without decreasing of the etch rate. And the reasons for this phenomenon was investigated by XPS(x-ray photoelectron spectroscopy) surface analysis and plasma characteristic.

• Proceedings of the Korean Society of Precision Engineering Conference
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• 1996.11a
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• pp.167-171
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• 1996

Chemical mechanical polishing (CMP) has become widely accepted for the planarization of multi-interconnect structures in semiconductor manufacturing. However, perfect planarization is not so easily achieved because it depends on the pattern sensitivity, the large number of controllable process parameters, and the absence of a reliable process model, etc. In this paper, we realized the planarization of deposited oxide layers followed by metal (W) polishing as a replacement for tungsten etchback process for via formation. Atomic force microscope (AFM) is used for the evaluation of pattern topography during CMP. As a result, AFM evaluation is very attractive compared to conventional methods for the measurement of planarity. Moreover, it will contribute to analyze planarization characteristics and establish CMP model.

• Journal of the Korea Institute of Building Construction
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• v.14 no.4
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• pp.359-368
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• 2014

Photocatalytic cement has been receiving attention due to its high oxidation power that reduces nitrogen oxide, thus contributing to a clean atmospheric environment. However, there has not yet been a thorough investigation on the effect of photocatalytic reactions on the durability of cementitious material, the parent material. In this study, photocatalytic cement samples were exposed to nitric oxide gas and UV along with cycles of wetting and drying to simulate environmental conditions. The surface of samples was characterized mechanically, chemically, and visually during the cycling. The results indicate that that the photocatalytic efficiency decreased with continued NO oxidation. The pits found from SEM indicated that chemical deterioration, such as acid attack or leaching, did occur. However, this was not confirmed by X-ray diffraction. The hardness was not affected, probably due to the formation of CSH as evidenced by the XRD pattern. In conclusion, it was found that photocatalysis could alter cementitious materials both chemically and mechanically, which could further affect long-term durability.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2004.07b
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• pp.1230-1233
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• 2004

Ozone is useful oxidizing gas for the fabrication of oxide thin films. Accordingly researching on oxidizing gas is required. In order to obtain high quality oxide thin films, higher ozone concentration is necessary. In this paper oxidation property was evaluated relation between oxide gas pressure and inverse temperature(CuO reaction). The obtained condition was formulated by the fabrication of Cu metal thin film by co-deposition using the ion Beam Sputtering method. Because the CuO phase peak appeared at the XRD evaluation of the CuO thin film using ozone gas, this study has succeeded in the fabrication of the CuO phase at $825^{\circ}C$.

• Journal of the Korean Institute of Telematics and Electronics A
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• v.33A no.4
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• pp.112-120
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• 1996

With the MOsES (mask oxide sidewall etch scheme)process which uses the conventional i-line stepper and isotropic wet etching, CMOSFET's with fine gate pattern of 0.1.mu.m CMOSFET device, the screening oxide is deposited before the low energy ion implantation for source/drain extensions and two step sidewall scheme is adopted. Through the characterization of 0.1.mu.m CMOSFET device, it is found that the screening oxide deposition sheme has larger capability of suppressing the short channel effects than two step sidewall schem. In cse of 200.angs.-thick screening oxide deposition, both NMOSFET and PMOSFET maintain good subthreshold characteristics down to 0.1.mu.m effective channel lengths, and show affordable drain saturation current reduction and low impact ionization rates.

• Journal of Sensor Science and Technology
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• v.22 no.4
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• pp.286-291
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• 2013

This paper presents to analyze patterns from single and complex malodors using gas sensor array based on metal oxide semiconductors. The aim of research is to identify and discriminate single malodors such as $NH_3$, $CH_3SH$ and $H_2S$ and their mixtures according to concentration levels. Measurement system for analyzing patterns from malodors is constructed by an array of metal oxide semiconductor sensors which are available commercially together with associate electronics. The patterns from sensory system are analyzed by Principal Component Analysis (PCA) which is simple statistical pattern recognition technique. Throughout the experimental trails, we confirmed the experimental procedure for measurement system such as sensors calibration time and gas flow rate, and discriminated malodors using pattern analysis technique.

• Journal of the Korean Institute of Telematics and Electronics D
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• v.35D no.9
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• pp.20-25
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• 1998

Cu removal rates for various SiO$_2$ trench pitch sizes and densities and AFM images of surface profiles after global planarization using Cu CMP technology are investigated. In the experimental results, Cu removal rates are increasing as the pattern densities and pattern pitches are getting high and low, respectively, and then decreasing after local planarization. The rms roughness after global planarization are about 120$\AA$. AFM images with a 50% pattern density for 1${\mu}{\textrm}{m}$ and 2${\mu}{\textrm}{m}$ pitches show that thicknesses of 120~330$\AA$ Cu interconnects have been peeled off and oxide erosion of Cu/Sio$_2$ sidewall is observed. However, AFM images with a 50% pattern density for 10${\mu}{\textrm}{m}$ and 15${\mu}{\textrm}{m}$ pitches show that 260~340$\AA$ thick Cu interconnects have been trenched at the boundaries of Cu/Sio$_2$ sidewall.