• The Journal of Korean Institute of Electromagnetic Engineering and Science
• /
• v.30 no.2
• /
• pp.104-110
• /
• 2019

In this paper, a complementary metal oxide semiconductor(CMOS) power amplifier(PA) integrated circuit operating in the 900 MHz band for long-term evolution(LTE) communication systems is presented. The output matching network based on a transformer was implemented on a printed circuit board for low loss. Simultaneously, to achieve high efficiency of the PA, the second harmonic impedances are controlled. The CMOS PA was fabricated using a $0.18{\mu}m$ CMOS process and measured using an LTE uplink signal with a bandwidth of 10 MHz and peak to average power ratio of 7.2 dB for verification. The implemented CMOS PA module exhibits a power gain of 24.4 dB, power-added efficiency of 34.2%, and an adjacent channel leakage ratio of -30.1 dBc at an average output power level of 24.3 dBm.