• Title/Summary/Keyword: Oxide layers

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Flame Spreading Over Metal Dust Deposits With Particles Size (입경 변화에 따른 퇴적금속 분체층의 화염전파)

  • Han, Ou Sup;Choi, Yi Rac;Han, In Soo;Lee, Jung Suk
    • Korean Chemical Engineering Research
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    • v.48 no.5
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    • pp.603-608
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    • 2010
  • A study has been conducted experimentally to investigate behavior of ignition and flame spread over metal dust deposits with particle size using by a developed apparatus and thermogravimetric analysis(TGA). Zr, Ta and Mg-Al(90:10 wt%) alloy metal powders including Mg and Ti with different particle size were used. Also we used PMMA(Polymethylmethacrylate) powder to compare the combustion properties to those of metal powders. When dust layers were more than 5 mm in thickness, the dependency of deposit depth on flame spread rate over dust layer was not shown. With decreasing mean particle diameter, flame spread rate over Ti dust layer decreased, while the spread rate over Mg dust layer increased. For mean diameter of $51{\mu}m$, fire spread rate over pure Mg dust layer decreased to about 50 percent in Mg-Al(90:10 wt%) dust layer. The oxide thickness of metal dust used in this study tended to be inversely proportional with the spread rate, and it was quite small for influence with particle size. From the results of TGA for Ti and Mg, weight increasing curves(550 for Mg, 578 for Ta) were observed in the oxidation process, and they seems to be caused by ignition of upper dust layer.

Characterization of Layered Double Hydroxides(Mg-Al-$CO_3$ systems) and Rehydration Reaction of Their Calcined Products in Aqueous Chromate Solution (층상이중수산화물(Mg-Al-$CO_3$ 체계)의 물리 · 화학적 특성규명 및 소성된 시료의 크롬산이온 수용액에서 재수화반응)

  • Rhee, Seog Woo;Kang, Mun-Ja;Moon, Hichung
    • Journal of the Korean Chemical Society
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    • v.39 no.8
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    • pp.627-634
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    • 1995
  • Layered double hydroxides ($Mg-Al-CO_3$ systems, LDH), which are hydrotalcite-like anionic clay minerals, having different $Mg^{2+}\;to\;Al^{3+}$ ratio were synthesized by coprecipitation method. The subsequent products were characterized by the following methods; elemental analysis, X-ray powder diffraction, thermal analysis (DSC and TGA), FT-IR and $^{27}$Al-MAS NMR. X-ray powder patterns showed that the products formed were layered structure materials. Two heat absorption peaks were observed around 20 ∼280$^{\circ}C$ (surface water and interlayer water) and 280∼500$^{\circ}C$ (water from lattice hydroxide and carbon dioxide from interlayer carbonate) in DSC diagrams, and they were quantitatively analyzed by TGA diagrams (in case LDH4 16.2% and 28.6% respectively). FT-IR spectra indicate that the interlayer carbonate ions occupied symmetrical sites between two adjacent layers in a parallel direction. $^{27}$Al-MAS NMR spectra show only single resonance (8.6 ppm) of the octahedrally coordinated aluminum similar magnesium. When LDH4 was calcined at 560$^{\circ}C$ for 3 hours in air, its layered structure was destroyed giving a mixed metal oxide. However it readily became rehydrated in aqueous chromate solution to its original structure.

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The Coating Effects of Al2O3 on a Li[Li0.2Mn0.54Co0.13Ni0.13]O2 Surface Modified with (NH4)2SO4

  • Oh, Ji-Woo;Oh, Rye-Gyeong;Hong, Jung-Eui;Yang, Won-Geun;Ryu, Kwang-Sun
    • Bulletin of the Korean Chemical Society
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    • v.35 no.5
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    • pp.1516-1522
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    • 2014
  • A series of 20 wt % $(NH_4)_2SO_4$ and 3 wt % $Al_2O_3$ surface treatments were applied to $Li[Li_{0.2}Mn_{0.54}Co_{0.13}Ni_{0.13}]O_2$ substrates. The $Li[Li_{0.2}Mn_{0.54}Co_{0.13}Ni_{0.13}]O_2$ substrates were synthesized using a co-precipitation method. Sample (a) was left pristine and variations of the 20 wt % $(NH_4)_2SO_4$ and 3 wt % $Al_2O_3$ were applied to samples (b), (c) and (d). XRD was used to verify the space group of the samples as R$\bar{3}$m. Additional morphology and particle size data were obtained using SEM imagery. The $Al_2O_3$ coating layers of sample (b) and (d) were confirmed by TEM images and EDS mapping of the SEM images. 2032-type coin cells were fabricated in a glove box in order to investigate their electrochemical properties. The cells were charged and discharged at room temperature ($25^{\circ}C$) between 2.0V and 4.8V during the first cycle. The cells were then charged and discharged between 2.0V and 4.6V in subsequent cycles. Sample (d) exhibited lower irreversible capacity loss (ICL) in the first charge-discharge cycle as compared to sample (c). Sample (d) also had a higher discharge capacity of ~250 mAh/g during the first and second charge-discharge cycles when compared with sample (c). The rate capability of the $Al_2O_3$-coated sample (b) and (d) was lower when compared with sample (a) and (c). Sample (d), coated with $Al_2O_3$ after the surface treatment with $(NH_4)_2SO_4$, showed an improvement in cycle performance as well as an enhancement of discharge capacity. The thermal stability of sample (d) was higher than that of the sample (c) as the result of DSC.

Microtube Light-Emitting Diode Arrays with Metal Cores

  • Tchoe, Youngbin;Lee, Chul-Ho;Park, Junbeom;Baek, Hyeonjun;Chung, Kunook;Jo, Janghyun;Kim, Miyoung;Yi, Gyu-Chul
    • Proceedings of the Korean Vacuum Society Conference
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    • 2016.02a
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    • pp.287.1-287.1
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    • 2016
  • Three-dimensional (3-D) semiconductor nanoarchitectures, including nano- and micro- rods, pyramids, and disks, are emerging as one of the most promising elements for future optoelectronic devices. Since these 3-D semiconductor nanoarchitectures have many interesting unconventional properties, including the use of large light-emitting surface area and semipolar/nonpolar nano- or micro-facets, numerous studies reported on novel device applications of these 3-D nanoarchitectures. In particular, 3-D nanoarchitecture devices can have noticeably different current spreading characteristics compared with conventional thin film devices, due to their elaborate 3-D geometry. Utilizing this feature in a highly controlled manner, color-tunable light-emitting diodes (LEDs) were demonstrated by controlling the spatial distribution of current density over the multifaceted GaN LEDs. Meanwhile, for the fabrication of high brightness, single color emitting LEDs or laser diodes, uniform and high density of electrical current must be injected into the entire active layers of the nanoarchitecture devices. Here, we report on a new device structure to inject uniform and high density of electrical current through the 3-D semiconductor nanoarchitecture LEDs using metal core inside microtube LEDs. In this work, we report the fabrications and characteristics of metal-cored coaxial $GaN/In_xGa_{1-x}N$ microtube LEDs. For the fabrication of metal-cored microtube LEDs, $GaN/In_xGa_{1-x}N/ZnO$ coaxial microtube LED arrays grown on an n-GaN/c-Al2O3 substrate were lifted-off from the substrate by wet chemical etching of sacrificial ZnO microtubes and $SiO_2$ layer. The chemically lifted-off layer of LEDs were then stamped upside down on another supporting substrates. Subsequently, Ti/Au and indium tin oxide were deposited on the inner shells of microtubes, forming n-type electrodes of the metal-cored LEDs. The device characteristics were investigated measuring electroluminescence and current-voltage characteristic curves and analyzed by computational modeling of current spreading characteristics.

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The Study of $SiO_2$, $Si_3N_4$ passivation layers grown by PECVD for the indiumantimonide photodetector

  • Lee, Jae-Yeol;Kim, Jeong-Seop;Yang, Chang-Jae;Park, Se-Hun;Yun, Ui-Jun
    • Proceedings of the Materials Research Society of Korea Conference
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    • 2009.11a
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    • pp.24.2-24.2
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    • 2009
  • Indium Antimonide(InSb)는 $3{\sim}5\;{\mu}m$대 적외선 감지영역에서 기존 HgCdTe(MCT)를 대체할 물질로 각광받고 있다. 1970년대부터군사적 용도로 미국, 이스라엘 등 일부 선진국에서 연구되기 시작했으며,이온주입, MOCVD, MBE 등 다양한 공정을 통해 제작되어 왔다. InSb 적외선 감지소자는 $3{\sim}5{\mu}m$대에서 HgCdTe와 성능은 대등한데 반해, 기판의 대면적화와 저렴한 가격, 우주공간 및 야전에서 소자 동작의안정성 등으로 InSb적외선 감지기는 냉각형 고성능 적외선 감지영역에서 HgCdTe를 대체해 가고 있다. 하지만 InSb는 77 K에서 0.225eV의 작은 밴드갭을 갖고 있기 때문에 누설전류로 인한 성능저하가 고질적인문제로 대두되었고, 이를 해결하기 위한 고품질 절연막 연구가 InSb적외선 수광 소자 연구의 주요이슈 중 하나가 되어왔다. 그 동안 PECVD, photo-CVD, anodic oxidation 등의 공정을 이용하여 $SiO_2$, $Si_3N_4$, 양극산화막(anodic oxide) 등 다양한 절연막에 대한 연구가 진행되었고[1,2], 절연막과 반도체 사이 계면에서의 열확산을 억제하여 계면트랩밀도를 최소화하기 위한 공정개발이 이루어졌다[3]. 하지만 InSb 적외선 감지기술은 국방 및 우주개발의 핵심기술중 하나로 그 기술의 이전이 엄격히 통제되고 있으며, 현재도 미국과 이스라엘, 일본, 영국 등 일부 선진국 만이 기술을 확보하고 있고, 국내의 경우 연구가 매우 취약한 실정이다. 따라서 본 연구에서는 InSb 적외선 감지기의 암전류를 제어하기 위한 낮은 계면트랩밀도를 갖는 절연막 증착 공정을 찾고자 하였다. 본 연구에서는 n형 (100) InSb 기판 ($n=0.2{\sim}0.85{\times}10^{15}cm^{-3}$ @ 77K)에 PECVD를 이용하여 $SiO_2$, $Si_3N_4$ 등을 증착하고 절연막으로서 이들의 특성을 비교 분석하였다. $SiO_2$는 160, 200, $240^{\circ}C$에서 $Si_3N_4$는 200, $300^{\circ}C$에서 증착하였다. Atomic Force Microscopy(AFM) 사진으로 확인한 결과, 모든 샘플에서표면거칠기가 ~2 nm의 평탄한 박막을 얻을 수 있었다. Capacitance-Voltage 측정(77K)을 통해 절연막 특성을 평가하였다. $SiO_2$$Si_3N_4$ 모두에서 온도가 증가할수록 벌크트랩밀도가 감소하는 경향을 볼 수 있었는데, 이는 고온에서 증착할 수록 박막 내의 결함이 감소했음을 의미한다. 반면계면트랩밀도는 온도가 증가함에 따라, 1011 eV-1cm-2 대에서 $10^{12}eV^{-1}cm^{-2}$ 대로 증가하였는데, 이는 고온에서 증착할 수 록 InSb 표면에서의 결함은 증가하였음을의미한다. 암전류에 큰 영향을 주는 것은 계면트랩밀도 이므로, $SiO_2$$Si_3N_4$ 모두 $200^{\circ}C$이하의 저온에서 증착시켜야 함을 확인할 수 있었다.

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Evaluation of Defects of Thermal Barrier Coatings by Thermal Shock Test Using Eddy Current Testing (열차폐 코팅층의 고온 열충격 시험후 ECT를 이용한 결함 평가)

  • Heo, Tae-Hoon;Cho, Youn-Ho;Lee, Joon-Hyun;Oh, Jeong-Seok;Lee, Koo-Hyun
    • Journal of the Korean Society for Nondestructive Testing
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    • v.29 no.5
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    • pp.450-457
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    • 2009
  • Periodical thermal shock can introduce defects in thermal barrier coating made by layers of CoNiCrAlY bond coating(BC) and $ZrO_2-8wt%Y_2O_3$ ceramic top coating(TC) on Inconel-738 substrate using plasma spraying. Thermal shock test is performed by severe condition that is to heat until $1000^{\circ}C$ and cool until $20^{\circ}C$. As the number of cycle is increased, the fatigue by thermal shock is also increased. After test, the micro-structures and mechanical characteristics of thermal barrier coating were investigated by SEM, XRD. The TGO layer of $Al_2O_3$ is formed between BC and TC by periodical thermal shock test, and its change in thickness is inspected by eddy current test(ECT). By ECT test, it is shown that TGO and micro-crack can be detected and it is possible to predict the life of thermal barrier coating.

Degradation Mechanisms of Organic Light-emitting Devices with a Glass Cap (유리 덮개로 보호된 OLED소자의 발광특성 저하 연구)

  • Yang Yong Suk;Chu Hye Yong;Lee Jeong-Ik;Park Sang-He;Hwang Chi Sun;Chung Sung Mook;Do Lee-Mi;Kim Gi Heon
    • Journal of the Korean Vacuum Society
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    • v.15 no.1
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    • pp.64-72
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    • 2006
  • We demonstrated organic light-emitting devices (OLEDs) based on the organic thin-film materials such as tris-(8-hydroxyquinoline) aluminum $(Alq_3)$. The structure of OLEDs was vacuum deposited upon transparent and thin glass substrates pre-coated with a transparent, conducting indium tin oxide thin film. The luminance characteristics, current, capacitance, and dispersion factor for degraded OLEDs, which were made by various bias currents $(0.5mA\;{\leq}\;I_{Bias}\;{\leq}9mA)$, are studied. The current dependences of lifetime were divided at approximately 2mA, and they represented nearly linear behaviors but had different slopes in a logarithmic plot of lifetime versus bias current. With lighting OLEDs, the anomaly of capacitance, as shown in the CV curve, occurred because of two factors, polarization in the bulk of organic materials and the interface between the metal and organic layers. In decayed OLEDs that had lower bias currents of less than 2mA, it was found that the degradation of luminance was related to both the decrease of polarization and to the lowering of the injection barrier.

A Study on the Formation fo Epitaxial $CoSi_2$ Thin Film using Co/Ti Bilayer (Co/Ti이중박막을 이용한 $CoSi_2$에피박막형성에 관한 연구)

  • Kim, Jong-Ryeol;Bae, Gyu-Sik;Park, Yun-Baek;Jo, Yun-Seong
    • Korean Journal of Materials Research
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    • v.4 no.1
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    • pp.81-89
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    • 1994
  • Ti film of lOnm thickness and Co film of 18nm thickness were sequentially e-heam evaporated onto Si (100) substrates. Metal deposited samples were rapidly thermal-annt.aled(KTA) in thr N1 en vironment a t $900^{\circ}C$ for 20 sec. to induce the reversal of metal bilayer, so that $CoSi_{2}$ thin films could be formed. The sheet resistance measured by the 4-point probe was 3.9 $\Omega /\square$This valur was maintained with increase in annealing time upto 150 seconds, showing high thermal stab~lity. Thc XRII spectra idrn tified the silicide film formed on the Si substrate as a $CoSi_{2}$ epitaxial layer. The SKM microgr;iphs showed smooth surface, and the cross-sectional TKM pictures revealed that the layer formed on the Si substrate were composed of two Co-Ti-Si alloy layers and 70nm thick $CoSi_{2}$ epl-layer. The AES analysis indicated that the native oxide on Si subs~rate was removed by TI ar the beginning of the RTA, and Ihcn that Co diffused to clean surface of Si substrate so that epitaxial $CoSi_{2}$ film could bt, formed. In thc rasp of KTA at $700^{\circ}C$. 20sec. followed by $900^{\circ}C$, 20sec., the thin film showed lower sheet resistance, but rough surface and interface owing to $CoSi_{2}$ crystal growth. The application scheme of this $CoSi_{2}$ epilayer to VLSI devices and the thermodynarnic/kinetic mechan~sms of the $CoSi_{2}$ epi-layer formation through the reversal of Co/Ti bdayer were discussed.

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Demonstration of Zr Recovery from 50 g Scale Zircaloy-4 Cladding Hulls using a Chlorination Method (50 g 규모의 Zircaloy-4 피복관으로부터 염소화 방법을 이용한 Zr 회수 거동 연구)

  • Jeon, Min Ku;Lee, Chang Hwa;Lee, You Lee;Choi, Yong Taek;Kang, Kweon Ho;Park, Geun Il
    • Journal of Nuclear Fuel Cycle and Waste Technology(JNFCWT)
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    • v.11 no.1
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    • pp.55-61
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    • 2013
  • The recovery of Zr from Zircaloy-4 (Zry-4) cladding hulls using a chlorination method was demonstrated for complete conversion of Zr into $ZrCl_4$. A chlorination reaction was performed by reacting Zry-4 hulls for 8 h under a 70 cc/min $Cl_2$ + 70 cc/min Ar flow at $380^{\circ}C$. The initial weight of the reactant (51.7 g) decreased to 0.49 g after 8 h of operation, which is only 0.95wt% of the initial weight. The weight of the total reaction products was 121.7 g with a high Zr purity of 99.80wt%. Fe and Sn were identified as major (0.18wt%) and minor (0.02wt%) impurities of the reaction products, respectively. It was also shown that Zr exhibited a high recovery ratio of 96.95wt% with a relatively small experimental loss of 2.34wt%. Observation of the reaction residues revealed that the chlorination reaction was dominant along the longitudinal direction, and surface oxide layers remained as reaction residues. The high purity and recovery ratio of Zr proposed the feasibility of the chlorination technique as an effective hull waste treatment method.

Corrosion and Oxidation Properties of Ni-Base Superalloy KM 1557 (Ni기 초내열 단조합금 KM 1557의 부식 및 산화성질)

  • Choi, Hyoung Il;Kim, Hyon Tae;Kim, Young Do;Yoon, Kook Han;Yoo, Myoung Ki;Kwun, Sook In;Choi, Ju
    • Analytical Science and Technology
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    • v.5 no.1
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    • pp.143-152
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    • 1992
  • Corrosion resistances in various acids and high temperature oxidation properties have been investigated for the Ni-base superalloy KM 1557. Corrosion tests were performed in $H_2SO_4$, HCl, $HNO_3$, $H_3PO_4$ and $CH_3COOH$. Oxidation tests were carried out in air for 20 and 110hrs at $900^{\circ}C$, $950^{\circ}C$ and $1050^{\circ}C$. Hot corrosion tests were done in salt bath of 75% $Na_2SO_4-25%$ NaCl at $900^{\circ}C$ for 20hrs. After the tests, the samples were observed by optical microscopy and analysed by EPMA and X-ray mapping in order to investigate the distribution of composition. It was shown that corrosion resistances in various acids and hot salt bath were proven to be excellent. It was suggested that the amounts of oxides were determined mainly by the depth of internal and intergranular $Al_2O_3$ oxide layers.

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