• Title/Summary/Keyword: Oxide layers

Search Result 869, Processing Time 0.028 seconds

Photoluminescence from silicon nanocrystals in silicon ion implanted SiO2 layers (실리콘 이온주입 SiO2층의 나노결정으로 부터의 광루미네센스)

  • Kim, Kwang-Hee;Oh, Hang-Seok;Jang, Tae-Su;Kwon, Young-Kyu;Lee, Yong-Hyun
    • Journal of Sensor Science and Technology
    • /
    • v.11 no.3
    • /
    • pp.183-190
    • /
    • 2002
  • Photoluminescence(PL) properties of $Si^+$-implanted $SiO_2$ film, which was thermally grown on c-Si substrate, is reported. We have compared room temperature photoluminescence (PL) spectra of the samples which was made in several kinds of implantation, subsequent annealing and $SiO_2$ film thickness. XRD data was correlated with the PL spectra. Silicon nanocrystals in $SiO_2$ film is considered as the origin of the photoluminescence. PL spectra was investigated after wet etching of the $SiO_2$ film by using BOE (Buffered Oxide Etchant) at every one minute. PL peak wavelength was varied as the etching is proceeded. These results indicate that the quantity and the distribution of dominant size of Si nanocrystals in $SiO_2$ film seem to have a direct effect on PL spectrum.

Effect of TiO2 Coating Thickness on Photovoltaic Performance of Dye-sensitized Solar Cells Prepared by Screen-printing Using TiO2 Powders

  • Lee, Deuk Yong;Cho, Hun;Kang, Daejun;Kang, Jong-Ho;Lee, Myung-Hyun;Kim, Bae-Yeon;Cho, Nam-Ihn
    • Journal of the Korean Ceramic Society
    • /
    • v.51 no.4
    • /
    • pp.362-366
    • /
    • 2014
  • Dye-sensitized solar cells (DSSCs) were synthesized using a $0.25cm^2$ area of a $TiO_2$ nanoparticle layer as the electrode and platinum (Pt) as the counter electrode. The $TiO_2$ nanoparticle layers (12 to 22 ${\mu}m$) were screen-printed on fluorine-doped tin oxide glass. Glancing angle X-ray diffraction results indicated that the $TiO_2$ layer is composed of pure anatase with no traces of rutile $TiO_2$. The Pt counter electrode and the ruthenium dye anchored $TiO_2$ electrode were then assembled. The best photovoltaic performance of DSSC, which consists of a $18{\mu}m$ thick $TiO_2$ nanoparticle layer, was observed at a short circuit current density ($J_{sc}$) of $14.68mA{\cdot}cm^{-2}$, an open circuit voltage ($V_{oc}$) of 0.72V, a fill factor (FF) of 63.0%, and an energy conversion efficiency (${\eta}$) of 6.65%. It can be concluded that the electrode thickness is attributed to the energy conversion efficiency of DSSCs.

Analysis of the bonding strength according to surface treatments of dental Co-Cr alloy for porcelain fused to metal (치과용 Co-Cr 금속도재관의 표면처리에 의한 도재와의 결합 강도 분석)

  • Park, Hee-Geun;Park, Won-UK;Zhao, Jinming;Hwang, Kyu-Hong
    • Journal of Technologic Dentistry
    • /
    • v.38 no.3
    • /
    • pp.175-183
    • /
    • 2016
  • Purpose: Observation of Oxide Film Formation and Bonding Strength according to surface treatment of Co-Cr Alloy for porcelain fused to Metal. Methods: metal specimens $0.5mm{\times}25mm{\times}4mm$ in size were made using Co-Cr alloys for porcelain fused to metal crown (Heraenium P, Tae jung Medis). Dental porcelain $0.5mm{\times}25mm{\times}4mm$ in size was sintered on the metal specimens after changing the etching time, sandblasting condition, and heat treatment temperature. Subsequently, the bonding strength was compared by the three-point flexural strength test using a universal testing machine (UTM) to observe the fracture surface and oxidized layers. Results: With regard to the experimental group treated with acid-etching, Specimen 1 treated for 25 minutes (B-3) showed the highest bonding strength, and Specimen 2 treated only with sandblasting showed the most excellent bonding force at 3.5 bar (C-3). With regard to the experimental group treated with sandblasting at 3.5 bar after acid-etching for 25 minutes, Specimen 3 with heat treatment at $980^{\circ}C$ (D-3) showed the highest bonding strength. Conclusion: The specimen which went through both sandblasting and etching, showed an excellent ceramicmetal bond strength.

Effects of Doping with Al, Ga, and In on Structural and Optical Properties of ZnO Nanorods Grown by Hydrothermal Method

  • Kim, Soaram;Nam, Giwoong;Park, Hyunggil;Yoon, Hyunsik;Lee, Sang-Heon;Kim, Jong Su;Kim, Jin Soo;Kim, Do Yeob;Kim, Sung-O;Leem, Jae-Young
    • Bulletin of the Korean Chemical Society
    • /
    • v.34 no.4
    • /
    • pp.1205-1211
    • /
    • 2013
  • The structural and optical properties of the ZnO, Al-doped ZnO, Ga-doped ZnO, and In-doped ZnO nanorods were investigated using field-emission scanning electron microscopy, X-ray diffraction, photoluminescence (PL) and ultraviolet-visible spectroscopy. All the nanorods grew with good alignment on the ZnO seed layers and the ZnO nanorod dimensions could be controlled by the addition of the various dopants. For instance, the diameter of the nanorods decreased with increasing atomic number of the dopants. The ratio between the near-band-edge emission (NBE) and the deep-level emission (DLE) intensities ($I_{NBE}/I_{DLE}$) obtained by PL gradually decreased because the DLE intensity from the nanorods gradually increased with increase in the atomic number of the dopants. We found that the dopants affected the structural and optical properties of the ZnO nanorods including their dimensions, lattice constants, residual stresses, bond lengths, PL properties, transmittance values, optical band gaps, and Urbach energies.

The Electrical Properties and Residual Stress of Pb(Zr,Ti)O$_3$ Piezoelectric Thin Films fabricated by 2- Step Deposition Method (2단계 증착법으로 제조된 Pb(Zr, Ti)O$_3$압전 박막의 전기적 특성 및 잔류 응력에 관한 연구)

  • Kim, Hyuk-Hwan;Lee, Kang-Woon;Lee, Won-Jong;Nam, Hyo-Jin
    • Korean Journal of Materials Research
    • /
    • v.11 no.9
    • /
    • pp.769-775
    • /
    • 2001
  • High quality PZT piezoelectric thin films were sputter- deposited on$ RuO_2$/$SiO_2$/Si substrates by using 2-step deposition method. As the first step, PZT seed layers were fabricated at a low temperature($475^{\circ}C$ ) to form a pure perovskite phase by reducing the volatility of Pb oxide. and then, as the second step, the PZT films were deposited at high temperatures ($530^{\circ}C$~$570^{\circ}C$) to reduce the defect density in the films. By this method, the pure perovskite phase was obtained at high deposition temperature range ($530^{\circ}C$~$570^{\circ}C$) and the superior electrical properties of PZT films were obtained on $RuO_2$substrate : 2Pr : 60$\mu$C/$\textrm{cm}^2$, $E_c: 60kV/cm, \;J_t: 10^{-6}A/cm^2\; at\; 250kV/cm$. The residual stress of PZT films fabricated by the 2-step deposition method was tensile and below 150MPa. It was attempted to control the residual stress in the PZT films by applying a negative bias to the substrate. As the amplitude of the substrate bias was increased, the residual tensile stress was slightly decreased, however, the ferroelectric properties of PZT films were degraded by ion bombardment.

  • PDF

Power Densities According to Anode Functional Layers on the Manufactured SOFC Unit Cells Using Decalcomania Method (전사지를 이용 적층한 셀 구조 및 연료극 기능층 형성에 따른 출력 특성)

  • An, Yong-Tae;Ji, Mi-Jung;Gu, Ja-Bin;Choi, Jin-Hoon;Hwang, Hae-Jin;Choi, Byung-Hyun
    • Korean Journal of Materials Research
    • /
    • v.22 no.11
    • /
    • pp.626-630
    • /
    • 2012
  • The properties of SOFC unit cells manufactured using the decalcomania method were investigated. SOFC unit cell manufacturing using the decalcomania method is a very simple process. In order to minimize the ohmic loss of flattened tube type anode supports of solid oxide fuel cells(SOFC), the cells were fabricated by producing an anode function layer, YSZ electrolyte, LSM electrode, etc., on the supports and laminating them. The influence of these materials on the power output characteristics was studied when laminating the components and laminating the anode function layer between the anode and the electrolyte to improve the output characteristics. Regarding the performance of the SOFC unit cell, the output was 246 $mW/cm^2$ at a temperature of $800^{\circ}C$ in the case of not laminating the anode function layer; however, this value was improved by a factor of two to 574 $mW/cm^2$ due to the decrease of the ohmic resistance and polarization resistance of the cell in the case of laminating the anode function layer. The outputs appeared to be as high as 574 and 246 $mW/cm^2$ at a temperature of $800^{\circ}C$ in the case of using decalcomania paper when laminating the electrolyte layer using the in dip-coating method; however, the reason for this is that interfacial adhesion was improved due to the dense structure, which leads to a thin thickness of the electrolyte layer.

Effects of Post-Annealing on Properties of HfO2 Films Grown by ALD (ALD법으로 성장한 HfO2 박막의 열처리에 따른 특성변화)

  • Lee, J.W.;Ham, M.H.;Maeng, W.J.;Kim, H.;Myoung, J.M.
    • Korean Journal of Materials Research
    • /
    • v.17 no.2
    • /
    • pp.96-99
    • /
    • 2007
  • The effects of post-annealing of high-k $HfO_2$ thin films grown by atomic layer deposition method were investigated by the annealing treatments of $400-600^{\circ}C$. $Pt/HfO_2/p-Si\;MOS$ capacitor structures were fabricated, and then the capacitance-voltage and current-voltage characteristics were measured to analyze the electrical characteristics of dielectric layers. The X-ray diffraction analyses revealed that the $500^{\circ}C-annealed\;HfO_2$ film remained to be amorphous, and the $600^{\circ}C-annealed\;HfO_2$ film was crystallized. The annealing treatment at $500^{\circ}C$ resulted in the highest capacitance and the lowest leakage current due to the reduction of defects in the $HfO_2$ films and non-crystallization. Our results suggest that post-annealing treatments are a critical factor in improving the characteristics of gate dielectric layer.

Recent Trends of Friction Stir Welding of Titanium (타이타늄 소재 마찰교반용접 기술 동향)

  • Chun, Chang-Keun;Kim, Sung-Wook;Kim, Heung-Joo;Chang, Woong-Seong;Noh, Joong-Suk
    • Journal of Welding and Joining
    • /
    • v.31 no.2
    • /
    • pp.16-20
    • /
    • 2013
  • Titanium and its alloys have been widely using in the various field of industry application due to high corrosion resistant properties and mechanical properties. Titanium is highly reactive in the high temperature state and the formation of titanium oxide and porosities in the nuggets of fusion welding will results in the degradation of the mechanical properties. For this reason the studies of friction stir welding for titanium have been investigated recently. The FSW zones of titanium were classified by the weld nugget (WN), the linear transition boundary (TB) and the heat affected zone (HAZ). The WN along with titanium parent was characterized by the presence of twins and dislocations. The average grain size and hardness of WN has been changed according to heat input. The grain refinement resulted from the FSW increased the hardness in the stir zone. Sound dissimilar joints between SUS 304 and CP-Ti were achieved using an advancing speed of 50 mm/min and rotation speeds in the range of 700-1100 rpm. Aluminum 1060 and titanium alloy Ti-6Al-4V plates were lap joined by friction stir welding, hence the ultimate tensile shear strength of joint reached 100% of Al 1060. Mg alloy and Ti were successfully butt joined by inserting a probe into the Mg alloy plate with slightly offsetting. But Ti-Al intermetallic compound layers formed at the interface of these joints.

그래핀-탄소나노튜브 혼성 나노구조 합성

  • Jeong, Sang-Hui;Song, U-Seok;Lee, Su-Il;Kim, Yu-Seok;Cha, Myeong-Jun;Kim, Seong-Hwan;Jo, Ju-Mi;Jeong, Min-Uk;Park, Jong-Yun
    • Proceedings of the Korean Vacuum Society Conference
    • /
    • 2013.02a
    • /
    • pp.613-613
    • /
    • 2013
  • 그래핀은 저차원계 구조에서 기인하는 뛰어난 전기적, 물리적, 기계적 성질을 지니고 있어 실리콘 기반 기술을 대체할 전계 효과 트랜지스터 이외에도 투명전극, 초고용량 커패시터, 전계방출 디스플레이 등 다양한 응용분야에 적용 가능하다. 최근에는 이러한 응용 연구분야에서 그래핀과 탄소나노튜브 각각의 단점을 최소화하고 장점을 극대화하기 위한 그래핀-탄소나노튜브 혼성 나노구조에 대한 연구들이 진행되고 있는 추세이다. 이전 연구들에서 환원된 그래핀 산화물(Reduced Graphene Oxide, RGO)을 이용한 그래핀-탄소나노튜브 혼성 나노구조가 제작되었는데, 이는 RGO의 제작과정에서 복잡한 공정과 긴 합성과정이 요구될 뿐 아니라, 복합 물질에서 탄소나노튜브의 밀도 제어가 어렵다는 단점을 지닌다. 또한 현재까지 제작된 그래핀-탄소나노튜브 혼성 나노구조의 경우, 열 화학기상증착법으로 합성된 다층(few-layers)의 그래핀과 탄소나노튜브 혼성 나노구조를 제작하였다 [1-6]. 본 연구에서는 우수한 전기적 특성을 가진 단층(monolayer)의 그래핀을 열 화학기상증착법으로 합성한 후, 그래핀 위에 단일벽 탄소나노튜브를 성장시킴으로써 그래핀-탄소나노튜브 혼성 나노구조를 제작하였다. 합성된 그래핀-탄소나노튜브의 구조적 특징은 주사 전자 현미경과 라만 분광기 측정을 통해 확인하였고, 촉매의 표면 형상 및 화학적 상태는 원자힘 현미경과 X선 광전자 분광법을 통해 확인하였다. 또한 그래핀 기반의 전계 효과 트랜지스터의 경우, 상온에서 그래핀은 우수한 전하 이동도를 가지며 웨이퍼 스케일에서 제작하기 쉬우나 밴드 갭이 없으므로 높은 Ion/Ioff를 가지는 그래핀 기반의 트랜지스터를 만드는 것이 과제이다. 반면 탄소나노튜브는 큰 에너지 갭을 가지고 있으므로 높은 Ion/Ioff를 구현하는 소자 제작이 가능하다. 그리하여 제작된 그래핀-탄소나노튜브 혼성 나노구조의 소자 제작을 통해 전기적 특성을 조사하였다.

  • PDF

The Processing and Characterization of Sol-Gel Derived Ferroelectric PMN Powders and Thin Films (졸-겔법에 의한 강유전성 PMN 분말 및 박막의 제조와 특성)

  • Hwang, Jin-Myeong;Jang, Jun-Yeong;Eun, Hui-Tae
    • Korean Journal of Materials Research
    • /
    • v.8 no.12
    • /
    • pp.1138-1145
    • /
    • 1998
  • The sliding wear behavior of Ni-base hardfacing alloy, Deloro 50, was investigated at the contact stresses of 15ksi and 30ksi under the various wear environments. In air at room temperature, Deloro 50 showed lower wear resistance than Stellite 6 even at 15ksi due to the occurrence of severe adhesive wear. This seems to be caused by the lower hardness and work- hardening rate of Deloro 50 than those of Stellite 6. In water at room temperature, Deloro 50 showed as good wear resistance as Stellite 6 at 15ksi. It was considered to be due to that water could effectively prevent metal to metal contact through contacting asperities. However, Deloro 50 showed severe adhesive wear at 30ksi in water at room temperature. It seems to be that the water could not suppress adhesion wear at 30ksi. At $300^{\circ}C$ in air, Deloro 50 exhibited higher wear resistance than Stellite 6 even at 30ksi. It was considered that the oxide glaze layers formed on wear surface during sliding, effectively prevented direct metal-to-metal contacts.

  • PDF