• Journal of Welding and Joining
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• 제13권3호
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• pp.134-146
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• 1995

Aluminium nitride(AlN) is currently under investigation as potential candidate for replacing alumium oxide(Al$_{2}$ $O_{3}$) as a substrate material for for electronic circuit packaging. Brazing of aluminium nitride(AlN) to Cu with Ag base active alloy containing Ti has been investigated in vacuum. Binary Ag$_{98}$ $Ti_{2}$(AT) and ternary At-1wt.%Al(ATA), AT-1wt.%Ni(ATN), AT-1wt.% Mn(ATM) alloys showed good wettability to AlN and led to the development of strong bond between brate alloy and AlN ceramic. The reaction between AlN and the melted brazing alloys resulted in the formation of continuous TiN layers at the AlN side iterface. This reaction layer was found to increase by increase by increasing brazing time and temperature for all filler metals. The bond strength, measured by 4-point bend test, was increased with bonding temperature and showed maximum value and then decreased with temperature. It might be concluded that optimum thickness of the reaction layer was existed for maximum bond strength. The joint brazed at 900.deg.C for 1800sec using binary AT alloy fractured at the maximum load of 35kgf which is the highest value measured in this work. The failure of this joint was initiated at the interface between AlN and TiN layer and then proceeded alternately through the interior of the reaction layer and AlN ceramic itself.

• 마이크로전자및패키징학회지
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• 제14권3호
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• pp.15-20
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• 2007

플라스틱 기판에 적용이 가능한 최대 공정온도 $270^{\circ}C$ 이하에서 ZnO-TFT 소자를 제작하였다. ZnO-TFT 소자는 bottom gate 구조로 제작되었으며, ICP-CVD로 형성된 $SiO_2$ 산화물 게이트 공정을 제외하고는 모든 박막증착 공정은 RF-magnetron sputtering process를 이용하였다. ZnO 박막은 Ar과 $O_2$ gas 유량의 비율에 따라 여러 가지 조건에서 RF-magnetron sputtering 시스템을 이용하여 상온에서 증착하였다. Ar과 $O_2$ gas의 비율에 따라 제작된 TFT 소자는 모두 enhancement 모드의 소자특성을 나타내었고, 또한 가시광선영역에 있어 80% 이상의 높은 투과율을 보였다. ZnO 증착시 순수 Ar을 사용하여 제작된 ZnO-TFT의 경우에, $1.2\;cm^2/Vs$의 field effect mobility, 8.5 V의 threshold voltage, 그리고 $5{\times}10^5$의 높은 on/off ratio, 1.86 V/decade의 swing voltage로 가장 우수한 전기적 특성을 보였다.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2014년도 제46회 동계 정기학술대회 초록집
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• pp.490.1-490.1
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• 2014

The ZnO nanowire (NW)-based nanogenerators (NGs) can have rectifying current and potential generated by the coupled piezoelectric and semiconducting properties of ZnO by variety of external stimulation such as pushing, bending and stretching. So, ZnO NGs needed to enhance durability for stable properties of NGs. The durability of the metal electrodes used in the typical ZnO nanogenerators(NGs) is unstable for both electrical and mechanical stability. Indium tin oxide (ITO) is used as transparent flexible electrode but because of high cost and limited supply of indium, the fragility and lack of flexibility of ITO layers, alternatives are being sought. It is expected that carbon nanotube and Ag nanowire conductive coatings could be a prospective replacement. In this work, we demonstrated transparent flexible ZnO NGs by using CNT/Ag nanowire hybrid electrode, in which electrical and mechanical stability of top electrode has been improved. We grew vertical type ZnO NW by hydrothermal method and ZnO NW was coated with hybrid silicone coating solution as capping layer to enhance adhesion and durability of ZNW. We coated the CNT/Ag nanowire hybrid electrode by using bar coating system on a capping layer. Power generation of the ZnO NG is measured by using a picoammeter, a oscilloscope and confirmed surface condition with FE-SEM. As a results, the NGs using the CNT/Ag NW hybrid electrode show 75% transparency at wavelength 550 nm and small change of the resistance of the electrode after bending test. It will be discussed the effect of the improved flexibility of top electrode on power generation enhancement of ZnO NGs.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2014년도 제46회 동계 정기학술대회 초록집
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• pp.95-95
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• 2014

An OLED(Organic Light-Emitting Diode) device based on the emissive electroluminescent layer a film of organic materials. OLED is used for many electronic devices such as TV, mobile phones, handheld games consoles. ULVAC's mass production systems are indispensable to the manufacturing of OLED device. ULVAC is a manufacturer and worldwide supplier of equipment and vacuum systems for the OLED, LCD, Semiconductor, Electronics, Optical device and related high technology industries. The SMD Series are single-substrate sputtering systems for deposition of films such as metal films and TCO (Transparent Conductive Oxide) films. ULVAC has delivered a large number of these systems not only Organic Evaporating systems but also LTPS CVD systems. The most important technology of thin-film encapsulation (TFE) is preventing moisture($H_2O$) and oxygen permeation into flexible OLED devices. As a polymer substrate does not offer the same barrier performance as glass substrate, the TFE should be developed on both the bottom and top side of the device layers for sufficient lifetimes. This report provides a review of promising thin-film barrier technologies as well as the WVTR(Water Vapor Transmission Rate) properties. Multilayer thin-film deposition technology of organic and inorganic layer is very effective method for increasing barrier performance of OLED device. Gases and water in the organic evaporating system is having a strong influence as impurities to OLED device. CRYO pump is one of the very useful vacuum components to reduce above impurities. There for CRYO pump is faster than conventional TMP exhaust velocity of gases and water. So, we suggest new method to make a good vacuum condition which is CRYO Trap addition on OLED evaporator. Alignment accuracy is one of the key technologies to perform high resolution OLED device. In order to reduce vibration characteristic of CRYO pump, ULVAC has developed low vibration CRYO pumps to achieve high resolution alignment performance between Metal mask and substrate. This report also includes ULVAC's approach for these issues.

• 한국재료학회지
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• 제25권2호
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• pp.107-112
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• 2015

The oxide films formed on etched aluminum foils play an important role as dielectric layers in aluminum electrolytic capacitors. $Y_2O_3$-doped $ZrO_2$ (YZ) films were coated on the etched aluminum foils by sol-gel dip coating, and the electrical properties of YZ-coated Al foils were characterized. YZ films annealed at $450^{\circ}C$ were crystallized into a cubic phase, and as the $Y_2O_3$ doping content increased, the unit cell of $ZrO_2$ expanded and the grain size decreased. The etch pits of Al foils were filled by YZ sol when it dried at atmospheric pressure after repeating for several times, but this step could essentially be avoided when being dried in a vacuum. YZ-coated foils indicated that the specific capacitance and dissipation factor were $2-2.5{\mu}F/cm^2$ and 2-4 at 1 kHz, respectively, and the leakage current and withstanding voltage of films approximately 200 nm thick were $5{\times}10^{-4}A$ at 21 V and 22 V, respectively. After being anodized at 500 V, the foils exhibited a specific capacitance and dissipation factor of $0.6-0.7{\mu}F/cm^2$ and 0.1-0.2, respectively, at 1 kHz, while the leakage current and withstanding voltage were $2{\times}10^{-4}-3{\times}10^{-5}A$ at 400 V and 420-450 V, respectively. This suggests that YZ film is a promising dielectric that can be used in high voltage Al electrolytic capacitors.

• 한국재료학회지
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• 제21권8호
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• pp.432-438
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• 2011

In this study, chemical bath deposited (CBD) indium sulfide buffer layers were investigated as a possible substitution for the cadmium sulfide buffer layer in CIGS thin film solar cells. The performance of the $In_2S_3$/CIGS solar cell dramatically improved when the films were annealed at $300^{\circ}C$ in inert gas after the buffer layer was grown on the CIGS film. The thickness of the indium sulfide buffer layer was 80 nm, but decreased to 60 nm after annealing. From the X-ray photoelectron spectroscopy it was found that the chemical composition of the layer changed to indium oxide and indium sulfide from the as-deposited indium hydroxide and sulfate states. Furthermore, the overall atomic concentration of the oxygen in the buffer layer decreased because deoxidation occurred during annealing. In addition, an In-thin layer was inserted between the indium sulfide buffer and CIGS in order to modify the $In_2S_3$/CIGS interface. The $In_2S_3$/CIGS solar cell with the In interlayer showed improved photovoltaic properties in the $J_{sc}$ and FF values. Furthermore, the $In_2S_3$/CIGS solar cells showed higher quantum efficiency in the short wavelength region. However, the quantum efficiency in the long wavelength region was still poor due to the thick buffer layer.

• Journal of Animal Science and Technology
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• 제55권2호
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• pp.131-139
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• 2013

The aim of this study was to assess the effects of housing systems on physiological and immunological responses as stress indicators in laying hens. A total of 500 White Leghorn aged 16 weeks were allotted into ten conventional cages (10 birds/cage and 810 $cm^2$/bird) and four floor pens (100 birds/pen and 2,800 $cm^2$/bird) for 24 weeks. The hens housed in conventional cages with higher stocking density resulted in a significantly (P<0.05) lower BW compared with those housed in floor pens with lower stocking density without affecting the relative weights of immune organs between housing conditions. In plasma biochemical values, cholesterol and corticosterone were significantly (P<0.05) lower in the hens housed in floor pens compared with those housed in conventional cages. In pro-inflammatory cytokines, hepatic interleukin (IL)-10 and interferon-gamma (IFN-${\gamma}$) levels were significantly (P<0.05) higher in the hens housed in conventional cages compared with those kept in floor pens. Splenic and thymic IFN-${\gamma}$ expression was significantly (P<0.05) up-regulated in the hens kept in conventional cages compared with those kept in floor pens without affecting IL-1, IL-10, lipopolysaccharide- induced tumor necrosis factor-${\alpha}$ factor (LITAF) and inducible nitric oxide synthase (iNOS). In the bursa of Fabricius, IL-10 and iNOS expression of the hens housed in conventional cages were significantly (P<0.05) higher compared with those of the hens housed in floor pens. In conclusion, layers housed in conventional cages enhanced plasma cholesterol, corticosterone and some pro-inflammatory cytokines in the immune organs compared with those in floor pens.

• 공업화학
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• 제20권5호
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• pp.465-472
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• 2009

본 총설에서는 최근 주로 연구되고 있는 활성탄, 탄소나노튜브, 팽창 흑연 및 활성 탄소 섬유 등 다공성 탄소재료를 중심으로 수소 저장량을 증대시키기 위한 기술 및 기 발표된 수소저장량과 그 장 단점에 대하여 고찰하였다. 수소저장능을 향상시키기 위한 탄소 내 기공의 최적의 크기는 0.6~0.7 nm로 조사되었다. 촉매의 경우 전이금속 및 그 금속산화물이 많이 이용되었으며, 주로 다공성 탄소재료에 도핑을 통해 수소저장능을 향상시켰다. 수소저장 매체인 다공성 탄소재료 중에서 활성탄은 대량생산이 가능하여 가격이 비교적 저렴한 장점이 있고 탄소나노튜브는 튜브의 튜브간 공간 외에도 내부공간에 수소를 저장할 수 있는 공간이 수소저장에 활용될 수 있다는 장점이 있다. 팽창 흑연은 흑연의 층 사이에 알칼리 금속의 삽입 시 층간 거리가 팽창하여 수소저장에 용이하고, 활성탄소섬유는 높은 비표면적과 발달된 미세기공이 수소흡착에 크게 기여한다는 점이 있다. 이러한 기존의 연구로 고려해 볼 때 다공성 탄소재료는 아직 달성되지 못한 DOE의 수소저장 목표치에 도달하기 위한 주요 유망한 후보재료 중의 하나이다.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2011년도 제41회 하계 정기 학술대회 초록집
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• pp.125-125
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• 2011

In this study, we investigated the electrical, optical, structural, and surface properties of indium zinc oxide (IZO)/Ag/IZO multilayer electrode grown by specially designed roll-to-roll sputtering system using the flexible substrate. By the continuous roll-to-roll sputtering of the bottom IZO, Ag, and top IZO layers at room temperature, they were able to fabricate a high quality IZO/Ag/IZO multilayer electrode. At optimized conditions, the bottom IZO layer (40 nm) was deposited on a flexible substrate. After deposition of the Bottom IZO layer, Ag layer was deposited onto the bottom IZO film as a function of DC power (200~500 W). Subsequently, the top IZO layer was deposited onto the Ag layer at identical deposition conditions to the bottom IZO layer (40 nm). We investigated the characteristics of IZO/Ag/IZO multilayer electrode as a function of Ag thickness. It was found that the electrical and optical properties of IZO/Ag/IZO multilayer electrode was mainly affected thickness of the Ag layer at optimized condition. In case of IZO/Ag/IZO multilayer electrode with the Ag power (350W), it exhibited a low sheet resistance of 7.1 ohm/square and a high transparency of 86.4%. Furthermore, we fabricated the touch screen panel using the IZO/Ag/IZO multilayer electrode, which demonstrate the possibility of the IZO/Ag/IZO multilayer electrode grown by roll-to-roll sputtering system as a transparent conducting layer in the touch screen panel.

• 한국분말재료학회지
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• 제21권3호
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• pp.207-214
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• 2014

In this study, nano-scale copper powders were reduction treated in a hydrogen atmosphere at the relatively high temperature of $350^{\circ}C$ in order to eliminate surface oxide layers, which are the main obstacles for fabricating a nano/ultrafine grained bulk parts from the nano-scale powders. The changes in composition and microstructure before and after the hydrogen reduction treatment were evaluated by analyzing X-ray diffraction (XRD) line profile patterns using the convolutional multiple whole profile (CMWP) procedure. In order to confirm the result from the XRD line profile analysis, transmitted electron microscope observations were performed on the specimen of the hydrogen reduction treated powders fabricated using a focused ion beam process. A quasi-statically compacted specimen from the nano-scale powders was produced and Vickers micro-hardness was measured to verify the potential of the powders as the basis for a bulk nano/ultrafine grained material. Although the bonding between particles and the growth in size of the particles occurred, crystallites retained their nano-scale size evaluated using the XRD results. The hardness results demonstrate the usefulness of the powders for a nano/ultrafine grained material, once a good consolidation of powders is achieved.