• Proceedings of the Korean Vacuum Society Conference
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• 2010.08a
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• pp.170-170
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• 2010

Thin-film transistors (TFT) have become the key components of electronic and optoelectronic devices. Most conventional thin-film field-effect transistors in display applications use an amorphous or polycrystal Si:H layer as the channel. This silicon layers are opaque in the visible range and severely restrict the amount of light detected by the observer due to its bandgap energy smaller than the visible light. Therefore, Si:H TFT devices reduce the efficiency of light transmittance and brightness. One method to increase the efficiency is to use the transparent oxides for the channel, electrode, and gate insulator. The development of transparent oxides for the components of thin-film field-effect transistors and the room-temperature fabrication with low voltage operations of the devices can offer the flexibility in designing the devices and contribute to the progress of next generation display technologies based on transparent displays and flexible displays. In this thesis, I report on the dc performance of transparent thin-film transistors using amorphous indium tin zinc oxides for an active layer. $SiO_2$ was employed as the gate dielectric oxide. The amorphous indium tin zinc oxides were deposited by RF magnetron sputtering. The carrier concentration of amorphous indium tin zinc oxides was controlled by oxygen pressure in the sputtering ambient. Devices are realized that display a threshold voltage of 4.17V and an on/off ration of ${\sim}10^9$ operated as an n-type enhancement mode with saturation mobility with $15.8\;cm^2/Vs$. In conclusion, the fabrication and characterization of thin-film transistors using amorphous indium tin zinc oxides for an active layer were reported. The devices were fabricated at room temperature by RF magnetron sputtering. The operation of the devices was an n-type enhancement mode with good saturation characteristics.

• Proceedings of the Korean Vacuum Society Conference
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• 2013.02a
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• pp.183-184
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• 2013

Two main MBE growth techniques have been used: plasma-assisted MBE (PA-MBE), which utilizes a rf plasma to supply active nitrogen, and ammonia MBE, in which nitrogen is supplied by pyrolysis of NH3 on the sample surface during growth. PA-MBE is typically performed under metal-rich growth conditions, which results in the formation of gallium droplets on the sample surface and a narrow range of conditions for optimal growth. In contrast, high-quality GaN films can be grown by ammonia MBE under an excess nitrogen flux, which in principle should result in improved device uniformity due to the elimination of droplets and wider range of stable growth conditions. A drawback of ammonia MBE, on the other hand, is a serious memory effect of NH3 condensed on the cryo-panels and the vicinity of heaters, which ruins the control of critical growth stages, i.e. the native oxide desorption and the surface reconstruction, and the accurate control of V/III ratio, especially in the initial stage of seed layer growth. In this paper, we demonstrate that the reliable and reproducible growth of GaN on Si (110) substrates is successfully achieved by combining two MBE growth technologies using rf plasma and ammonia and setting a proper growth protocol. Samples were grown in a MBE system equipped with both a nitrogen rf plasma source (SVT) and an ammonia source. The ammonia gas purity was ＞99.9999% and further purified by using a getter filter. The custom-made injector designed to focus the ammonia flux onto the substrate was used for the gas delivery, while aluminum and gallium were provided via conventional effusion cells. The growth sequence to minimize the residual ammonia and subsequent memory effects is the following: (1) Native oxides are desorbed at $750^{\circ}C$ (Fig. (a) for [$1^-10$] and [001] azimuth) (2) 40 nm thick AlN is first grown using nitrogen rf plasma source at $900^{\circ}C$ nder the optimized condition to maintain the layer by layer growth of AlN buffer layer and slightly Al-rich condition. (Fig. (b)) (3) After switching to ammonia source, GaN growth is initiated with different V/III ratio and temperature conditions. A streaky RHEED pattern with an appearance of a weak ($2{\times}2$) reconstruction characteristic of Ga-polarity is observed all along the growth of subsequent GaN layer under optimized conditions. (Fig. (c)) The structural properties as well as dislocation densities as a function of growth conditions have been investigated using symmetrical and asymmetrical x-ray rocking curves. The electrical characteristics as a function of buffer and GaN layer growth conditions as well as the growth sequence will be also discussed. Figure: (a) RHEED pattern after oxide desorption (b) after 40 nm thick AlN growth using nitrogen rf plasma source and (c) after 600 nm thick GaN growth using ammonia source for (upper) [110] and (lower) [001] azimuth.

• Journal of the Korean Ceramic Society
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• v.40 no.9
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• pp.909-915
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• 2003

Anodic oxide films on aluminum play an important role as a dielectrics in aluminum electrolytic capacitor. In order to obtain the high capacitance, ZrO$_2$ films were coated on aluminum foils by sol-gel method and then, the properties of anodized films were studied. The coating and drying of the films were repeated 4-10 times and annealed at 300～$600^{\circ}C$ and the triple layer of ZrO$_2$/Al-ZrO$_{x}$ /Al$_2$O$_3$ was formed onto aluminum substrates after anodizing of ZrO$_2$/Al film. The thickness of $Al_2$O$_3$ layer was decreased with increasing the annealing temperature due to the densification of ZrO$_2$ film. The ZrO$_2$ films were crystallized even at 30$0^{\circ}C$ and showed nanocrystalline structure. The. capacitance of aluminum foil annealed at low temperature was higher than that at high temperature. The increase of capacitance was due to the high capacitance of ZrO$_2$ film annealed at low temperature. The capacitance of ZrO$_2$ coated aluminum increased about 3 times compared to that without a ZrO$_2$ layer after anodizing to 400 V. From these results, the aluminum foils with composite oxide layers are found to be applicable to the aluminum electrolytic capacitor.

• Korean Journal of Materials Research
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• v.21 no.7
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• pp.357-363
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• 2011

In this paper, high temperature oxidation behavior of newly developed alloys, Ti-6Al-4Fe and Ti-6Al-1Fe, is examined. To understand the effect of Fe on the air oxidation behavior of the Ti-Al-Fe alloy system, thermal oxidation tests are carried out at $700^{\circ}C$ and $800^{\circ}C$ for 96 hours. Ti-6Al-4V alloy is also prepared and tested under the same conditions for comparison with the developed alloys. The oxidation resistance of the Ti-Al-Fe alloy system is superior to that of Ti-6Al-4V alloy. Ti-6Al-4V shows the worst oxidation resistance for all test conditions. This is not a result of the addition of Fe, but rather it is due to the elimination of V, which has deleterious effects on high temperature oxidation. The oxidation of the Ti-Al-Fe alloy system follows the parabolic rate law. At $700^{\circ}C$, Fe addition does not have a noticeable influence on the amount of weight gain of all specimens. However, at $800^{\circ}C$, Ti-6Al-4Fe alloy shows remarkable degradation compared to Ti-6Al-1Fe and Ti-6Al. It is discovered that the formation of $Al_2O_3$, a diffusion resistance layer, is remarkably hindered by a relative decrease of the ${\alpha}$ volume fraction. This is because Fe addition increases the volume fraction of ${\beta}$ phase within the Ti-6Al-xFe alloy system. Activities of Al, Ti, and Fe with respect to the formation of oxide layers are calculated and analyzed to explore the oxidation mechanism.

• Journal of the Korea Academia-Industrial cooperation Society
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• v.22 no.3
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• pp.492-498
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• 2021

This feasibility study evaluated an optically transparent planar antenna using liquid salt-water as the conducting material. The most significant reason behind using liquid salt-water for transparent antenna applications is its excellent average optical transparency (OTav) (> 95% at a salinity of 40 ppt) compared to other typical solid transparent thin-film electrodes, such as indium tin oxide (ITO:> 73%) or multi-layer films (MLF: > 78%). Each conductive arm of the proposed dipole is constructed from a salt-water layer held between two clear planar acrylic layers (��r = 2.61, tan�� = 0.01, OTav > 90%) (acrylic/salt-water/acrylic; ASA) due to surface tension. To examine the electrical and optical properties of the ASA structure, the surface tension was measured to determine the thickness of the salt-water layer that finalized its sheet resistance and OTav. The average gain and efficiency of the antenna were 1.72 dBi and 74%, respectively, in the operating UHF (Ultra high frequency) band (470-771 MHz). Therefore, the proposed antenna can be a good candidate for applications as a transparent planar antenna using salt-water.

• The Journal of Korea Institute of Information, Electronics, and Communication Technology
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• v.16 no.1
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• pp.8-17
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• 2023

In conventional liquid crystal display(LCD) manufacturing process, Indium Tin Oxide(ITO) as transparent electrode and rubbing process of polyimide as alignment layer are essential process to apply electric field and align liquid crystal molecules. However, there are some limits that deposition of ITO requires high vacuum state, and rubbing process might damage the device with tribolectric discharge. In this paper, we made nanocomposite with PEDOT:PSS and MWNT to replace ITO and constructed alignment layer by nano imprint lithography with nano wrinkle pattern, to replace rubbing process. These replacement made that only one PEDOT:PSS/MWNT film can function as two layers of ITO and polyimide alignment layer, which means simplification of process. Transferred nano wrinkle patterns functioned well as alignment layer, and we found out lowered threshold voltage and shortened response time as MWNT content increase, which is related to increment of electric conductivity of the film. Through this study, it may able to contribute to process simplification, reducing process cost, and suggesting a solution to disadvantage of rubbing process.

• Restorative Dentistry and Endodontics
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• v.22 no.1
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• pp.1-33
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• 1997

The objective of this study was to analyze the in vitro and in vivo corrosion products of low and high copper amalgams. The four different types of amalgam alloy used in this study were Fine cut, Caulk spherical, Dispersalloy, and Tytin. After each amalgam alloy and Hg were triturated according to the directions of the manufacturer by means of the mechanical amalgamator(Amalgam mixer. Shinhung Co. Korea), the triturated mass was inserted into a cylindrical metal mold which was 12mm in diameter and 10mm in height. The mass was condensed by 150Kg/cm compressive force. The specimen was removed from the mold and aged at room temperature for about seven days. The standard surface preparation was routinely carried out by emery paper polishing under running water. In vitro amalgam specimens were potentiostatically polarized ten times in a normal saline solution at $37^{\circ}C$(potentiostat : HA-301. Hukuto Denko Corp. Japan). Each specimen was subjected to anodic polarization scan within the potential range -1700mV to+400mV(SCE). After corrosion tests, anodic polarization curves and corrosion potentials were obtained. The amount of component elements dissolved from amalgams into solution was measured three times by ICP AES(Inductive Coupled Plasma Atomic Emission Spectrometry: Plasma 40. Perkim Elmer Co. U.S.A.). The four different types of amalgam were filled in occlusal and buccal class I cavities of four human 3rd molars. After about five years the restorations were carefully removed after tooth extraction to preserve the structural details including the deteriorated margins. The occlusal surface, amalgam-tooth interface and the fractured surface of in vivo amalgam corrosion products were analyzed. In vivo and in vitro amalgam specimens were examined and analyzed metallographically by SEM(Scanning Electron Microscope: JSM 840. Jeol Co. Japan) and EDAX(Energy Dispersive Micro X-ray Analyser: JSM 840. Jeol Co. Japan). 1. The following results are obtained from in vitro corrosion tests. 1) Corrosion potentials of all amalgams became more noble after ten times passing through the in vitro corrosion test compared to first time. 2) After times through the test, released Cu concentration in saline solution was almost equal but highest in Fine cut. Ag and Hg ion concentration was highest in Caulk spherical and Sn was highest in Dispersalloy. 3) Analyses of surface corrosion products in vitro reveal the following results. a)The corroded surface of Caulk spherical has Na-Sn-Cl containing clusters of $5{\mu}m$ needle-like crystals and oval shapes of Sn-Cl phase, polyhedral Sn oxide phase. b)In Fine cut, there appeared to be a large Sn containing phase, surrounded by many Cu-Sn phases of $1{\mu}m$ granular shapes. c)Dispersalloy was covered by a thick reticular layer which contained Zn-Cl phase. d)In Tytin, a very thin, corroded layer had formed with irregularly growing Sn-Cl phases that looked like a stack of plates. 2. The following results are obtained by an analysis of in vivo amalgam corrosion products. 1) Occlusal surfaces of all amalgams were covered by thick amorphous layers containing Ca-P elements which were abraded by occlusal force. 2) In tooth-amalgam interface, Ca-P containing products were examined in all amalgams but were most clearly seen in low copper amalgams. 3) Sn oxide appeared as a polyhedral shape in internal space in Caulk spherical and Fine cut. 4) Apical pyramidal shaped Sn oxide and curved plate-like Sn-Cl phases resulted in Dispersalloy. 5) In Tytin, Sn oxide and Sn hydroxide were not seen but polyhedral Ag-Hg phase crystal appeared in internal space which assumed a ${\beta}_l$ phase.

• Korean Journal of Materials Research
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• v.22 no.4
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• pp.202-206
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• 2012

$CoSi_2$ was formed through annealing of atomic layer deposition Co thin films. Co ALD was carried out using bis(N,N'-diisopropylacetamidinato) cobalt ($Co(iPr-AMD)_2$) as a precursor and $NH_3$ as a reactant; this reaction produced a highly conformal Co film with low resistivity ($50\;{\mu}{\Omega}cm$). To prevent oxygen contamination, $ex-situ$ sputtered Ti and $in-situ$ ALD Ru were used as capping layers, and the silicide formation prepared by rapid thermal annealing (RTA) was used for comparison. Ru ALD was carried out with (Dimethylcyclopendienyl)(Ethylcyclopentadienyl) Ruthenium ((DMPD)(EtCp)Ru) and $O_2$ as a precursor and reactant, respectively; the resulting material has good conformality of as much as 90% in structure of high aspect ratio. X-ray diffraction showed that $CoSi_2$ was in a poly-crystalline state and formed at over $800^{\circ}C$ of annealing temperature for both cases. To investigate the as-deposited and annealed sample with each capping layer, high resolution scanning transmission electron microscopy (STEM) was employed with electron energy loss spectroscopy (EELS). After annealing, in the case of the Ti capping layer, $CoSi_2$ about 40 nm thick was formed while the $SiO_x$ interlayer, which is the native oxide, became thinner due to oxygen scavenging property of Ti. Although Si diffusion toward the outside occurred in the Ru capping layer case, and the Ru layer was not as good as the sputtered Ti layer, in terms of the lack of scavenging oxygen, the Ru layer prepared by the ALD process, with high conformality, acted as a capping layer, resulting in the prevention of oxidation and the formation of $CoSi_2$.

• Journal of the Korean Ceramic Society
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• v.49 no.3
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• pp.247-252
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• 2012

Crystal structure and chemical compositions of Plasma electrolytic oxidized layer of A-1100, A-2024, A-5052, A-6061, A-6063, A-7075, ACD-7B and ACD-12 were investigated. The electrolyte for plasma electrolytic oxidation was mixture of distilled water, $Na_2P_2O_7$, Cu, Cr metal salts and KOH. ${\eta}$-Alumina, as well as ${\alpha}$-alumina, was main crystal phase. Another crystals such as $(Al_{0.948}Cr_{0.052})_2O_3$ and $(Al_{0.9}Cr_{0.1})_2O_3$ were also formed in the oxide layer. It was thought that the effect of electrolyte compositions on the physical properties and crystal system of PEO layers was greater than the effect of Al alloy composition variation.

• Journal of the Korean Ceramic Society
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• v.49 no.3
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• pp.241-246
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• 2012

Physical properties of plasma electrolytic oxidized layers of 8 different kinds of Al alloys, A-1100, A-2024, A-5052, A-6061, A-6063, A-7075, ACD-7B and ACD-12 were investigated. The electrolyte for plasma electrolytic oxidation was mixture of distilled water, $Na_2P_2O_7$, KOH and some metal salts. Growth rate of oxide layer was slower in $Na_2P_2O_7$ electrolyte system than in $Na_2SiO_3$ system, and Ra50 surface roughness of oxidized layer was below $1.2{\mu}m$. Surface hardness in $Na_2P_2O_7$ electrolyte system is higher than in $Na_2SiO_3$ system, and roughness was lower in $Na_2P_2O_7$ electrolyte system than in $Na_2SiO_3$ system.