• 한국재료학회지
• /
• 제18권5호
• /
• pp.259-265
• /
• 2008

The corrosion and degradation factors of a current collector in a molten carbonate fuel cell (MCFC) were investigated to determine the optimized coating thickness of nickel on STS316L. The results show that the surface morphology and electrical properties depended on the nickel coating thickness. The surface morphology gradually changed from a flat to a porous structure along as the nickel coating thickness decreased, and the electrical resistance of the nickel-coated STS316L increased as the nickel coating thickness decreased. This can be attributed to the diffusion of elements of Fe and Cr from the substrate through the nickel grain boundaries. Additionally, carburization in the metal grains or grain boundaries in an anodic environment was found to influence the electrical properties due to matrix distortion. The resistance of Cr-oxide layers formed in an anodic environment causes a drop in the potential, resulting in a decrease in the system efficiency.

• KEPCO Journal on Electric Power and Energy
• /
• 제2권2호
• /
• pp.273-278
• /
• 2016

In order to evaluate the lifespan of high-temperature parts with thermal barrier coating in gas turbines used for power generation, this study was performed on an 80 MW-class gas turbine exceeding 24 k equivalent operating hours. Degradation characteristics were evaluated by analyzing the YSZ (Yttria Stabilized Zirconia) top coat, which serves as the thermal barrier coating layer, the NiCrAlY bond coat, and interface layers. Microstructural analysis of the top, middle, and bottom sections showed that Thermal Growth Oxide (TGO) growth, Cr precipitate growth within the bond coat layer, and formation of diffusion layer occur actively in high-temperature sections. These microstructural changes were consistent with damaged areas of the thermal barrier coating layer observed at the surface of the used blade. The distribution of Cr precipitates within the bond coat layer, in addition to the thickness of TGO, is regarded as a key indicator in the evaluation of degradation characteristics.

• 한국표면공학회:학술대회논문집
• /
• 한국표면공학회 2016년도 추계학술대회 논문집
• /
• pp.119-119
• /
• 2016

Over the last years the anodic formation of ordered $TiO_2$ nanotube layers has created significant scientific interest. Titanium oxide nanotube formation on the titanium or titanium alloy surface is expected to be important to improve cell adhesion and proliferation under clinical conditions. It should be possible to control the nanotube size and morphology for biomedical implant use by controlling the applied voltage, alloying element, current density, anodization time, and electrolyte. $TiO_2$ nanotubes show excellent biocompatibility, and the open volume in the tubes may be exploited as a drug release platform and so on. Therefore, in this study, Nanotube shape on the Ti-29Nb-xHf alloys with applied potentials was reserched. $TiO_2$ nanotube formation on Ti-29Nb-xHf alloys was carried out using anodization technique as a function of applied DC potential (10 V to 30 V and 30 V to 10 V) and anodization time for 60~120 min in $1MH_3PO_4$ with small additions of (0.8 wt. %, to 1.2 wt. %) NaF. The morphology change of anodized Ti-29Nb-xHf alloys was determined by FE-SEM, XRD, and EDS.

• 대한전자공학회논문지SD
• /
• 제41권10호
• /
• pp.51-56
• /
• 2004

광소자의 재료물질로서 특성이 우수하며 열광학계수가 큰 silicon을 기반으로 한 SOI (Silicon-on-insulator)를 사용하여 열광학 1×2 광스위치를 제안, 제작하였다. SOI wafer는 도파로가 형성될 상위 Si 층(n=3.5)과 클래딩 영역이 될 산화막 매립층(n=1.5) 그리고 기판인 Si인 3층으로 이루어진다. BPM(Beam propagation method) 전산모의를 통해 20dB 이상의 누화특성을 갖는 단일모드의 1×2 비대칭 y-분기 광도파로를 형성하고, 열확산 전산모의를 통해 금속열선을 설계 제작하였다. 제작된 광스위치는 약 3.5 watts의 구동 전력에서 20dB 이상의 채널간 누화가 측정되었다.

• 산업기술연구
• /
• 제25권A호
• /
• pp.157-162
• /
• 2005

In this study, the fabrication of PZT films was performed from a multilayer structure comprising $TiO_2$, $ZrO_2$ and PbO thin films prepared by rapid themal chemical vapor deposition(RTMOCVD). $TiO_2$, $ZrO_2$ and PbO are the component layers of oxide multilayer system for a single phase PZT thin film. The composition control of PZT thin film was done by the thickness control of individual component layer. The composition ratio of Pb:Ti:Zr with thickness were 1:0.94:0.55. Occurrence of a single-phase of PZT was initiated at around $550^{\circ}C$ and almost completed at $750^{\circ}C$ under the fixed time of 1hr. As the concentration of Pb increased, the roughness and crystallization in the film increased. From the as result of using XPS and TEM, the single phase formation through annealing is evident. The electrical properites of the prepared PZT thin film(Zr/Ti=40/60, 300 nm) on a Pt-coated substrate were as follow: dielectric constant ${\varepsilon}_r=475$, coercive field Ec=320 kV/cm, and remanant polarization $P_r=11{\mu}C/cm^2$ at an applied voltage of 18 V.

• 한국전기전자재료학회논문지
• /
• 제14권9호
• /
• pp.757-761
• /
• 2001

We studied emitting properties of organic electroluminescent devices fabricated using the spin-coating and Langmuir-Blodgett(LB) technique. The LB technique has the advantage of precise control of the thickness better than spin-coating method. LB monolayer of poly(3-hexylthiophene)(P3HT) was deposited 27 layers onto the indium-tin-oxide(ITO) substrate as Y-type films by the vertical dipping method. In the absorption spectra, the λ$\_$max/ of P3HT-AA LB films and of spin-coating films showed about at 510, 545 and 590 nm corresponding to 2.43, 2.28, 2.10eV. And we observed that the turn-on voltage of devices deposited by LB method(10V) was higher than that of spin-coating method(8.5V) in voltage-current-luminance characteristic. In the logV-logJ characteristics of ITO/P3HT-AA LB/Al device, we confirmed that El device fabricated by LB method follows three conduction mechanisms: ohmic, space-charge-limited current(SCLC) conduction and trapped-carrier-limited space-charge current(TCLC) conduction.

• 한국전기전자재료학회논문지
• /
• 제16권9호
• /
• pp.816-825
• /
• 2003

Current-voltage-luminance characteristics of organic light-emitting diodes (OLEDs) were measured in the temperature range of 10 K～300 K. Indium-tin-oxide (ITO) was used as an anode and aluminum as a cathode in the device. Organic of N,N'-diphenyl-N,N'-di(m-tolyl)-benzidine (TPD) was used for a hole transporting material, and tris (8-hydroxyquinolinato) aluminum (Alq$_3$) for an electron transporting material and emissive material. And copper phthalocyanine (CuPc), poly(3,4-ethylenedi oxythiophene);poly(styrenesulfonate) (PEDOT:PSS), and poly(N-vinylcarbazole) (PVK) were used for hole-injection buffer layers. From tile analysis of electroluminescence (EL) and photoluminesccnce (PL) spectra of the Alq$_3$, the EL spectrum is more greenish then that of PL. And the temperature-dependent current-voltage characteristics were analyzed in the double and multilayer structure of OLEDS. Electrical conduction mechanism was explained in the region of high-electric and low-electric field. Temperature-dependent luminous efficiency and operating voltage were analyzed from the current-voltage- luminance characteristics of the OLEDS.

• 한국전기전자재료학회논문지
• /
• 제21권2호
• /
• pp.162-172
• /
• 2008

We studied the effect of an Al underlayer on the growth of carbon nanotubes (CNTs) and their field emission characteristics, First of all, CNTs were grown on the Invar catalyst layers with different thickness of 1 to 10 nm, showing that the CNT length was saturated for the catalyst 5 nm or thicker. The CNTs grown on the 5-nm-thick catalyst were ${\sim}10{\mu}m$ long and ${\sim}30nm$ in diameter. Second, an Al underlayer was applied between the catalyst layer and the Ti diffusion barrier to reduce the diameters of CNTs for better field emission properties by forming spherical Al oxide particles on which smaller catalyst nanoparticles would occur. The optimal thickness of an Al underlayer underneath the 5-nm-thick catalyst was ${\sim}15nm$, producing the CNTs with the length of ${\sim}15{\mu}m$ and the diameter of ${\sim}15nm$. The field emission measurements, following the tape activation, showed that the thinner and longer CNTs gave rise to better field emission performance with the lower turn-on and threshold electric fields.

• 한국초전도저온공학회:학술대회논문집
• /
• 한국초전도저온공학회 2003년도 추계학술대회 논문집
• /
• pp.150-152
• /
• 2003

YBa$_2$Cu$_3$O$_{7-{\delta}}$(YBCO) coated conductors were deposited by pulsed laser deposition (PLD) on short buffered substrate in continuous PLD reel-to-reel system. The oxide multilayer buffered substrate of architectures of CeO$_2$/YSZ/Y$_2$O$_3$was fabricated by PLD at steady status. The degree of texture of each layer was investigated using X-ray diffraction including $\theta$-2$\theta$ scans, $\omega$-scans and $\Phi$-scans analysis. Their surface morphology was observed by scanning electron microscopy (SEM) The FWHM of the X-ray $\omega$-scans and $\Phi$-scans indicated that YBCO and buffer layers closely replicate the in-plane and out-of-plane texture of metal tape. Critical current at 77K self-field of 19A, critical temperature of 86K, and current density of 2MA/$\textrm{cm}^2$ were measured. The film also exhibits a homogeneous and dense surface morphology.e morphology.

• 한국기계가공학회지
• /
• 제9권1호
• /
• pp.106-113
• /
• 2010

The most suitable condition for plasma source ion implantation(PSII) was found based on the study of the characteristics of PSIIed tool and machined surfaces. The depth analysis according to the chemical bonding state of elements and surface component elements through the XPS and SIMS, was conducted to find the improved property of the PSIIed surface. Due to the diffusion of PSII, the nitrogen was found up to a depth of about 150nm according to the supplied voltage and ion implanted time. The deep diffusion by nitrogen caused the surface modification, but the formation of oxide component was found due to the residual gas contamination on the surface. Statistical method of ANOVA was conducted to find the effects of spindle speed and feed rate in interaction for machined surface roughness with PSIIed tools. The surface modification was found largely occurred by the nitrogen implanted surface with 2 hours for 27kV, 35kV and 43kV.