• Korean Journal of Materials Research
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• v.33 no.7
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• pp.309-314
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• 2023

This study aimed to address the limitations of traditional plasma nitriding methods by implementing a short-term plasma oxy-nitriding treatment on the surface of AISI 420 martensitic stainless steel. This treatment involved the sequential formation of nitride and oxide layers, to enhance surface hardness and corrosion resistance, respectively. The process resulted in the formation of a 20 ㎛-thick nitride layer and a 3 ㎛-thick oxide layer on the steel surface. Initially, the hardness increased by 2.2 times after nitriding, followed by a subsequent decrease of approximately 31 % after oxidation. While the nitriding process reduced corrosion resistance, the subsequent oxidation process led to the formation of a passive oxide film, effectively resolving this issue. The pitting corrosion of the oxide passive film started at 82.6 mVssc, providing better corrosion resistance characteristics than the nitride layer. Consequently, the trade-off between surface hardness and corrosion resistance in plasma oxy-nitrided AISI 420 martensitic stainless steel is anticipated to be recognized as an innovative and comprehensive surface treatment process for biomedical components.

• Journal of Animal Science and Technology
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• v.64 no.4
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• pp.717-726
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• 2022

The study evaluated different molt-inducing methods to achieve the main goal of molting in commercial layers during molting and post-molting periods. A total of 400 60-week-old Lohmann Brown layers were randomly divided into five groups (eight replicates of 10 birds for each group). Laying hens in the fasting control group received no diet from day 1 to day 10. The second group received a molt-inducing diet recommended by the breeding company. The third group received a wheat bran-based diet. The fourth group received a commercial layer diet with 8,000 ppm zinc (as zinc oxide, ZnO). The fifth group received an induced molting diet given to the second group with 8,000 ppm zinc, respectively. Egg production in the fasting control group and groups fed a diet with ZnO were significantly lower (p < 0.001) than those in groups fed the molt-inducing and wheat bran-based diets without ZnO during molting. Egg laying in the fasting control group was rapidly reduced and stopped on the 5.9th day of molting. In both groups having molt treatment with ZnO, egg production was similarly reduced and ceased on the 6.9th day and 7.0th day of molting, respectively, none of them differed significantly from the control. Layers fed molt-inducing diet or wheat bran-based diet did not reach the cessation of laying even on the 28th d of molting period. Relative weights of the ovary and growing oocytes of layers subjected to fasting or fed diets with ZnO were significantly lower than those of other groups. During the first two weeks of post molting, layers fed molt-inducing diet with ZnO showed higher egg production than the other two groups (p < 0.01). The eggshell strength in the group fed the commercial diet with ZnO was significantly higher than those fed the molt-inducing diet or wheat bran-based diets at 6 weeks of post molting (p < 0.05). These results suggest that the non-feed withdrawal molting using ZnO is more effective in inducing molting and increasing post-molt egg production and egg quality than other methods using a molt-inducing diet alone or wheat bran-based diet without ZnO.

• Korean Journal of Materials Research
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• v.17 no.1
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• pp.6-10
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• 2007

In the present study, we investigated the formation of self-organized nanostructure oxide layers on CP Ti and Ti-10Ta-10Nb alloy in an electrolyte of 1M phosphoric acid and 1.5 wt% Hydrofluoric acid. The morphology of oxide film on substrate was observed using scanning electron microscopy and transmission electron microscopy The surface roughness of titanium oxide film was analyzed by atomic force microscopy and the crystalline of specimen was investigated using X-ray diffractometer. The results of this study showed that well-aligned titanium oxide nanotubes are formed with diameter of approx. 100nm and length of approx. 500nm with CP Ti. However, it is clear that TiTaNb alloy highly irregular structure with various diameters. Transmission electron microscope investigations show that the specimens were confirmed as amorphous. Such titanium oxide nanotubes are expected a well-adhered bioacitive surface layer on titanium substrate for orthopedics and dental implants.

• Electrical & Electronic Materials
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• v.9 no.5
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• pp.463-469
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• 1996

The double insulating layer consisting of anodic oxide and ZnS was formed for HgCdTe metal insulator semiconductor(MIS) structure. ZnS was evaporated on the anodic oxide grown in H$_{2}$O$_{2}$ electrolyte. Recently, this insulating mechanism for HgCdTe MIS has been deeply studied for improving HgCdTe surface passivation. It was found through TEM observation that an interface layer is formed between ZnS and anodic oxide layers for the first time in the study of this area. EDS analysis of chemical compositions using by electron beam of 20.angs. in diameter and XPS depth composition profile indicated strongly that the new interface is composed of ZnO. Also TEM high resolution image showed that the structure of oxide layer has been changed from the amorphous state to the microsrystalline structure of 100.angs. in diameter after the evaporation of ZnS. The double insulating layer with the resistivity of 10$^{10}$ .ohm.cm was estimated to be proper insulating layer of HgCdTe MIS device. The optical reflectance of about 7% in the region of 5.mu.m showed anti-reflection effect of the insulating layer. The measured C-V curve showed the large shoft of flat band voltage due to the high density of fixed oxide charges about 1.2*10$^{12}$ /cm$^{2}$. The oxygen vacancies and possible cationic state of Zn in the anodic oxide layer are estimated to cause this high density of fixed oxide charges.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.47 no.4
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• pp.13-19
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• 2010

MOSFET with deuterium-incorporated gate oxide shows enhanced reliability compared to conventional MOSFET. We present an alternative process whereby deuterium is delivered to the location where the gate oxide reside by an implantation process. Deuterium ions were implanted using two different energies to account for the topography of the overlaying layers and placing the D peak at the top of gate oxide. A short anneal at forming gas was performed to remove the D-implantation damage. We have observed that deuterium ion implantation into the gate oxide region can successfully remove the interface states and the bulk defects. But the energy and the dose of the deuterium implant need to be optimized to maintain the Si substrates dopant activation, while generating deuterium bonds inside gate oxide. CV and IV characteristics studies also determined that the deuterium implant dose not degrade the transistor performance.

• Korean Journal of Materials Research
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• v.23 no.12
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• pp.708-713
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• 2013

Graphene oxide has been synthesized by microwave-assisted exfoliation of graphite oxide prepared by modified Hummers method. Graphite was oxidized in a solution of $H_2O_2$ and $KMnO_4$ at $65{\sim}80^{\circ}C$, followed by 10 % $H_2O_2$ solution treatment at $80{\sim}90^{\circ}C$. The graphite oxide was exfoliated under microwave irradiation of 1 kW and was reduced to graphene effectively by hydrazine hydrate ($H_4N_2{\cdot}H_2O$) treatment. The exfoliation of graphene oxide was significantly affected by the microwave irradiation on (heating)/off (cooling) period. An on/off period of 10 s/20 s resulted in much more effective exfoliation than that of 5 s/10 s with the same total treatment time of 10 min. This can be explained by the higher exfoliation temperature of 10 s/20 s. Repetition of the graphite oxidation and exfoliation processes also enhanced the exfoliation of graphene oxide. The thickness of the final graphene products was estimated to be several layers. The D band peaks of the Raman spectra of the final graphene products were quite low, suggesting a high crystal quality.

• Journal of the Korean institute of surface engineering
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• v.42 no.3
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• pp.128-132
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• 2009

Transparent conducting thin films of indium tin oxide(ITO) co-sputtered with aluminum-doped zinc oxide(AZO) were deposited on glass substrate by dual magnetron sputtering. It was found that the electrical properties and structural characteristics of the films are significantly changed according to the sputtering power of the AZO target. The IAZTO film prepared with D.C power of ITO at 100 W and R.F power of AZO at 50 W shows an electrical resistivity of $4.6{\times}10^{-4}{\Omega}{\cdot}cm$ and a sheet resistance of $30{\Omega}/{\square}$ (for 150 nm thick). Besides of the improvement of the electrical properties, compared to the ITO films deposited at the same process conditions, the IAZTO films have very smooth surface, which is due to the amorphous nature of the films. However, the electrical conductivity of the IAZTO films was found to be deteriorated along with the crystallization in case of the high temperature deposition (above $310^{\circ}C$). In this work, high quality amorphous transparent conductive oxide layers could be obtained by mixing AZO with ITO, indicating possible use of IAZTO films as the transparent electrodes in OLED and flexible display devices.

• Economic and Environmental Geology
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• v.50 no.5
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• pp.375-387
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• 2017

Amphibolite-hosted Fe-Ti mineralization at the Soyeonpyeong Island, located in central western part of the Korean Peninsula is a typical orthomagmatic Fe-Ti oxide deposit in South Korea. The amphibolite intruded into NW-SE trending Precambrian metasedimentary rocks. Lower amphibolite is characterized by igneous layering, consisting of feldspar-dominant and amphibole-Fe-Ti oxide-dominant layers. The igneous layering shows complicated and/or sharp contact. In contrast, upper amphibolite has a more complicated lithofacies (garnet-bearing, coarser, and schistose), and massive Fe-Ti oxide ore alternates with schistose amphibolite. NS- and EW-trending fault systems lead to redistribute upper amphibolite-hosted Fe-Ti orebody and igneous layering of lower amphibolite, respectively. The whole-rock compositions of amphibolite and Fe-Ti oxide ore reflect their constituent minerals. Amphibolite shows significantly positive Eu anomalies whereas Fe-Ti oxide ore has weak negative Eu anomalies. Plagioclase (Andesine to oligoclase) and Fe-Ti oxide minerals have constant composition regardless of their distribution. Amphibole has a compositionally variable but it doesn't reflect the chemical evolution. Mineral compositions within individual layers and successive layers are relatively constant not showing any stratigraphic evolution. This suggests that there are no successive injections of Fe-rich magma or assimilation with Fe-rich country rocks. Contrasting Eu anomalies between amphibolite and Fe-Ti oxide ore also suggest that extensive plagioclase fractionation during early crystallization stage cause increase in $Fe_2O_3/FeO$ ratio and overall Fe contents in the residual magma. Thus, Fe-rich residual liquids may migrate at the upper amphibolite by filter pressing mechanism and then produce sheeted massive Fe-Ti mineralization during late fractional crystallization.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2009.06a
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• pp.237-237
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• 2009

Zinc oxide (ZnO) thin film was deposited on Si substrates using polycrystalline (poly) 3C-SiC buffer layer, in which the ZnO film was grown by sol-gel method. Physical characteristics of the grown ZnO film was investigated experimentally by means of SEM, XRD, FT-IR (Furier Transform-Infrared spectrum), and AFM. XRD pattern was proved that the grown ZnO film on 3C-SiC layers had highly (002) orientation with low FWHM (Full width of half maxium). These results showed that ZnO thin film grown on 3C-SiC buffer layers can be used for various piezoelectric fields and M/NEMS applications.

• Proceedings of the Korean Institute of Surface Engineering Conference
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• 2013.05a
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• pp.85-85
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• 2013

A ceramic coating material with nano-sized silicon oxide on AISI 4340 steel for a thermal conductor at a high temperature was analyzed to find an optimum coating process. Average surface roughness of the coating layers prepared by dipping process was about $5.26{\mu}m$. Potassium silicate addition as a binder of the coating material tended to improve its hardness. A pencil scratch hardness testing showed that a loading more than 800 g made fragments of the coating layer.