• 센서학회지
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• 제24권4호
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• pp.219-223
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• 2015

Indium free consisting of three alternating layers GTO/Ag/GTO has been fabricated by radio-frequency (RF) sputtering for the applications as transparent conducting electrodes and the structural, electrical and optical properties of the gallium tin oxide (GTO) films were carefully studied. The gallium tin oxide thin films deposited at room temperature are found to have an amorphous structure. Hall Effect measurements show a strong influence on the conductivity type where it changed from n-type to p-type at $700^{\circ}C$. GTO/Ag/GTO multilayer structured electrode with a few nm of Ag layer embedded is fabricated and show the optical transmittance of 86.48% in the visible range (${\lambda}$ = 380~770 nm) and quite low electrical resistivity of ${\sim}10^{-5}{\Omega}cm$. The resultant power conversion efficiency of 2.60% of the multilayer based OPV (GAG) is lower than that of the reference commercial ITO. GTO/Ag/GTO multilayer is a promising transparent conducting electrode material due to its low resistivity, high transmittance, low temperature deposition and low cost components.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2014년도 제46회 동계 정기학술대회 초록집
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• pp.303.2-303.2
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• 2014

The oxides of group IV transition metals such as titanium, zirconium, hafnium have many important current and future application, including protective coatings, sensors and dielectric layers in thin film electroluminescent (TFEL) devices. Recently, group IV transition metal oxide films have been intensively investigated as replacements for SiO2. Due to high permittivities (k~14-25) compared with SiO2 (k~3.9), large band-gaps, large band offsets and high thermodynamic stability on silicon. Herein, we report the synthesis of new group IV transition metal complexes as useful precursors to deposit their oxide thin films using chemical vapor deposition technique. The complexes were characterized by FT-IR, 1H NMR, 13C NMR and thermogravimetric analysis (TGA). Newly synthesised compounds show high volatility and thermal stability, so we are trying to deposit metal oxide thin films using the complexes by Atomic Layer Deposition (ALD).

• Korean Chemical Engineering Research
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• 제55권4호
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• pp.483-489
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• 2017

The loss of the sulfur cathode material through dissolution of the polysulfide into electrolyte causes a significant capacity reduction of the lithium-sulfur cell during the charge-discharge reaction, thereby debilitating the electrochemical performance of the cell. We addressed this problem by using a chemical and physical approach called reduction of polysulfide dissolution through direct coating functional inorganic (graphene oxide) or organic layer (polyethylene oxide) on electrode, since the deposition of external functional layer can chemically interact with polysulfide and physically prevent the leakage of lithium polysulfide out of the electrode. Through this approach, we obtained a composite electrode for a lithium-sulfur battery (sulfur: 60%) coated with uniform and thin external functional layers where the thin external layer was coated on the electrode by solution coating and drying by a subsequent heat treatment at low temperature (${\sim}80^{\circ}C$). The external functional layer, such as inorganic or organic layer, not only alleviates the dissolution of the polysulfide electrolyte during the charging/discharging through physical layer formation, but also makes a chemical interaction between the polysulfide and the functional layer. As-formed lithium-sulfur battery exhibits stable cycling electrochemical performance during charging and discharging at a reversible capacity of 700~1187 mAh/g at 0.1 C (1 C = 1675 mA/g) for 30 cycles or more.

• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2009년도 9th International Meeting on Information Display
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• pp.382-384
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• 2009

In this study, high stable oxide thin-film transistors (TFTs) have been developed by using several approaching techniques, which including a change of the channel composition ratio in multi-component oxide semiconductors, a change of TFT structure with interfacial dielectric layers, a control of interface roughness, a channel-doping method, and so on.

• 한국세라믹학회지
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• 제52권5호
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• pp.344-349
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• 2015

An interconnect is the key component of solid oxide fuel cells that electrically connects unit cells and separates fuel from oxidant in the adjoining cells. To improve their surface stability in high-temperature oxidizing environments, metallic interconnects are usually coated with conductive oxides. In this study, lanthanum nickelates ($LaNiO_3$) with a perovskite structure are synthesized and applied as protective coatings on a metallic interconnect (Crofer 22 APU). The partial substitution of Co, Cu, and Fe for Ni improves electrical conductivity as well as thermal expansion match with the Crofer interconnect. The protective perovskite layers are fabricated on the interconnects by a slurry coating process combined with optimized heat-treatment. The perovskite-coated interconnects show area-specific resistances as low as $16.5-37.5m{\Omega}{\cdot}cm^2$ at $800^{\circ}C$.

• 한국전기전자재료학회논문지
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• 제29권6호
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• pp.321-326
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• 2016

Minimizing the carrier recombination and electrical loss through surface passivation is required for high efficiency c-Si solar cell. Usually, $SiN_X$, $SiO_X$, $SiON_X$ and $AlO_X$ layers are used as passivation layer in solar cell application. Silicon oxide layer is one of the good passivation layer in Si based solar cell application. It has good selective carrier, low interface state density, good thermal stability and tunneling effect. Recently tunneling based passivation layer is used for high efficiency Si solar cell such as HIT, TOPCon and TRIEX structure. In this paper, we focused on silicon oxide grown by various the method (thermal, wet-chemical, plasma) and passivation effect in c-Si solar cell.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2009년도 제38회 동계학술대회 초록집
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• pp.222-222
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• 2010

Transparent semiconductor oxide thin films have been attracting considerable attention as potential channel layers in thin film transistors (TFTs) owing to their several advantageous electrical and optical characteristics such as high mobility, high stability, and transparency. TFTs with ZnO or similar metal oxide semiconductor thin films as the active layer have already been developed for use in active matrix organic light emitting diode (AMOLED). Of late, there have been several reports on TFTs fabricated with InZnO, AlZnSnO, InGaZnO, or other metal oxide semiconductor thin films as the active channel layer. These newly developed TFTs were expected to have better electrical characteristics than ZnO TFTs. In fact, results of these investigations have shown that TFTs with the new multi-component material have excellent electrical properties. In this work, we present TFTs with inverted coplanar geometry and with a novel HfInZnO active layer co-sputtered at room temperature. These TFTs are meant for use in low voltage, battery-operated mobile and flexible devices. Overall, the TFTs showed good performance: the low sub-threshold swing was low and the $I_{on/off}$ ratio was high.

• 한국재료학회지
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• 제12권7호
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• pp.533-539
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• 2002

Porous anodic aluminum oxide layer for nano templates was prepared in acidic solutions. In order to investigate effects of 2nd anodization on ordered formation behaviors of the porous oxide layers, electrochemical and microstructural studies were performed, primarily using TEM, FE- SEM, AFM, and Ultramicrotomy. The pore diameter of the anodic oxide layer increased approximately linearly with increasing voltages, and to the contrary, the pore density decreased. It was shown that 2nd anodizing on the cell base after dissolving 1st anodic oxide layer was remarkably effective for forming ordered array of the pores, comparing with the case for 1st anodization only. And for controlling the diameter of pores, widening method by chemical dissolution seemed more practical than by electrochemical methods.

• 한국재료학회지
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• 제16권12호
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• pp.766-770
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• 2006

The frictional behavior of oxide films on top of the plasma nitrocarburized compound layers was investigated in terms of post-oxidation treatment temperatures. The post-oxidation treatment at both temperatures($400^{\circ}C,\;500^{\circ}C$) produced magnetite($Fe_3O_4$) films which led to a significant enhancement in corrosion resistance. However, this process did not result in any improvement in frictional behavior of the nitrocarburized surface. The wear mechanisms were governed predominantly by the abrasive action of the slider on the surface irrespective of the counterface material(SiC and Bearing steel). When the specimen was sliding against a SiC counterface, the oxide films were destroyed during the early stage of the sliding process and the wear debris of the oxide film at the sliding track had a great influence on the friction coefficient. On the other hand, when sliding against a bearing steel counterface, the slider was mainly worn out due to the much higher hardness of the surface hardened layer. The fluctuation of the friction coefficient of $400^{\circ}C$-oxidized/ nitrocarburized specimen is much severer than that of $500^{\circ}C$ specimen, due to the less amount of wear debris.

• Current Photovoltaic Research
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• 제11권1호
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• pp.13-17
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• 2023

Functional transparent electrode was achieved by metal oxide-metal-Metal oxide (OMO) structure. Tailoring of metal oxide and metal layers, optically transparent and electrically excellent OMO films were investigated. Silver (Ag) is adopted for the metal layer and Ag oxide (AgO) is reactively formed by flowing O₂ gas during the sputtering process. This spontaneous AgO formation from Ag simultaneously provides the good electrical interface with high transparency. Due to the feature of transparent electrode of OMO, it endows the shielding effect (SE) function of electromagnetic interference. Optically transparent and electrically conductive OMO electrode shows the high transmittance (83.7%) and low sheet resistance (6.5 Ω/☐) with SE of 29.54 dB.