• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.30 no.7
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• pp.413-416
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• 2017

We investigated solution-processed indium-yttrium-oxide (IYO) TFTs using apoly (methyl methacrylate) (PMMA) passivation layer. The IYO semiconductor solution was prepared with 0.1 M indium nitrate hydrate and 0.1 M yttrium acetate dehydrate as precursor solutions. The solution-processed IYO TFTs showed good performance: field-effect mobility of $13.13cm^2/Vs$, a threshold voltage of 8.2 V, a subthreshold slope of 0.93 V/dec, and a current on-to-off ratio of $7.2{\times}10^6$. Moreover, the PMMA passivation layers used to protectthe IYO active layer of the TFTs, did so without deteriorating their performance under ambient conditions; their operational stability and electrical properties also improved by decreasing leakage current.

• 유체기계공업학회:학술대회논문집
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• 2001.11a
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• pp.373-380
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• 2001

Solid Oxide Fuel Cells (SOFCs) have received considerable attention because of the advantages of high effiiciency, low pollution, cogeneration application and excellent integration with simplified reformer In this paper, we reported development of anode-tubular SOFC by wet process. For making tubular cell, Ni-cermet YSZ anode tube was fabricated using extrusion process, and YSZ electrolyte layer and LSM-YSZ composite, LSM, LSCF cathode layer were coated onto the anode supported tube using slurry dipping process and sintered by co-firing process. By using this tubular cell, we fabricated single cell consisted of the various cathode layers and 4 cell stack with an effective area of $75 cm^2$ per single cell, and evaluated their performance characteristics.

• Journal of the Korean Ceramic Society
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• v.48 no.6
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• pp.625-629
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• 2011

In this study, we show that by anodization of Nb in NaF electrolytes microcone niobium oxide layers can be formed under a range of experimental conditions. It is found that a single NaF electrolyte leads to the formation of microcones. At 1 M NaF, 40 V, 1 h, well-ordered microcones were generated on Nb discs. XRD results show that the initially formed anodic oxide is amorphous, but an amorphous to crystalline transition occurs during anodization. For the formation of favorable microcones, it is considered that proper parameters such as electrolyte concentration, voltage, anodizing time are necessary according to the kind of electrolytes.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.16 no.9
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• pp.765-770
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• 2003

We have developed a low-temperature, and low-pressure radical induced oxidation (RIO) technology, so that high-quality ultrathin silicon dioxide layers have been effectively produced with a high reproducibility, and successfully employed to realize high performace SiGe heterostructure complementary MOSFETs (HCMOS) lot the first time. The obtained oxide layer showed comparable leakage and breakdown properties to conventional furnace gate oxides, and no hysteresis was observed during high-frequency capacitance-voltage characterization. Strained SiGe HCMOS transistors with a 2.5 nm-thick gate oxide layer grown by this method exhibited excellent device properties. These suggest that the present technique is particularly suitable for HCMOS devices requiring a fast and high-precision gate oxidation process with a low thermal budget.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.21 no.9
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• pp.789-794
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• 2008

Zinc oxide (ZnO) has been widely studied for its practical applications such as transparent conduction electrodes for flat panel displays and solar cells. Especially, ZnO films show good chemical stability against hydrogen plasma, absence of toxicity, abundance in nature, and then suitable for photovoltaic applications. However, the fabrication process of thin film solar cells require a high substrate temperature and/or post heat treatment. Therefore, the layers have to withstand high temperatures, requiring an excellent stability without degrading their electronic and optical properties. In this paper, we investigated the stability of zinc oxide (ZnO) films doped with aluminum and hydrogen. Doped ZnO films were prepared by r.f. magnetron sputter and followed by heat treatment at different temperatures and for various times.

• Korean Journal of Materials Research
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• v.19 no.10
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• pp.533-537
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• 2009

This paper presents a new method for the improvement of color temperature without the change of the driving scheme using transparent dielectric layers with various metal oxides (CeO$_2$, Co$_3$O$_4$, CuO, Fe$_2$O$_3$, MnO$_2$, NiO) in plasma display panels (PDP). In this study, we fabricated ZnO-B$_2$O$_3$-SiO$_2$-Al$_2$O$_3$ glasse with various metal oxides and examined the optical properties of these glasses. As the metal oxides were added to the glasses, the visible transmittances of the dielectric layers decreased and the transmittances in special wavelength regions were reduced at different rates. The change of the transmittance in each wavelength range induced the variation of the visible emission spectra and the change of the color temperature in the PDP. The addition of Co$_3$O$_4$ and CuO slightly decreased the intensity of the blue light, but the intensities of the green and the red light were significantly decreased. Therefore, the color temperature can be improved from 6087K to 7378K and 7057K, respectively.

• 한국초전도학회:학술대회논문집
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• v.9
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• pp.352-357
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• 1999

The Cu sheets were selected for the substrate of the superconductor films. Pure Cu sheets with the thickness of 50${\mu}$m were fabricated using hot and cold rolling. The Cu sheets were heat treated to induce the biaxial texturing. The z-axis and x-y plane texturing of Cu sheets heat treated at different conditions were analyzed using XRD and a best heat treatment condition for the texturing was selected. ZrO$_2$ film was dip coated on Cu sheets heat treated at the best condition to prevent possible reaction between Cu sheets and YBCO superconductors, to reduce possible cracking due to thermal expansion mismatch and to decrease the lattice mismatch for biaxial texturing. The texturing of the oxide buffer layers were also studied.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2003.07b
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• pp.830-833
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• 2003

This paper describes the fabrication and characteristics of 3C-SiCOI sotctures by SDB and etch-back technology for high-temperature MEMS applications. In this work, insulator layers were formed on a heteroepitaxial 3C-SiC film grown on a Si(001) wafer by thermal wet oxidation and PECVD process, successively. The pre-bonding of two polished PECVD oxide layers made the surface activation in HF and bonded under applied pressure. The wafer bonding characteristics were evaluated by the effect of HF concentration used in the surface treatment on the roughness of the oxide and pre-bonding strength. Hydrophilic character of the oxidized 3C-SiC film surface was investigated by ATR-FTIR. The strength of the bond was measured by tensile strengthmeter. The bonded interface was also analyzed by SEM. The properties of fabricated 3C-SiCOI structures using etch-back technology in TMAH solution were analyzed by XRD and SEM. These results indicate that the 3C-SiCOI structure will offers significant advantages in the high-temperature MEMS applications.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.16 no.6
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• pp.471-476
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• 2003

Au/oxide/n-InP Schottky diodes were fabricated from heteroepitaxial InP layers grown on GaAs substrates by the metalorganic vapor phase epitaxy (MOVPE) method from a new combination of source materials: ethyldimethylindium (EDMIn) and tertiarybutylphosphine (TBP). Anodic oxidation technique by using a solution of 10 g of ammonium pentaborate in 100 cc of ethylene glycole as the electrolyte was used to deposit a thin oxide layer. The barrier heights determined from three different techniques, current-voltage (I-V) measurements at room temperature and in the temperature range of 273 K - 373 K, and room temperature capacitance-voltage (C-V) measurements are in good agreement, 0.7 - 0.9 eV which is considerably high as compared to the 0.45 - 0.55 eV in Au/n-InP Schottky diode without a Passivation layer. The ideality factors of 1.1 - 1.3 of the Schottky diodes were also determined from the I-Y characteristics. Deep level transient spectroscopy (DLTS) studies revealed only one shallow electron state at 92.6 meV below the bottom of the conduction band and no deep state in the heteroepitaxial InP layers grown from EDMIn and TBP.

• Food Science and Biotechnology
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• v.15 no.1
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• pp.19-23
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• 2006

Effects of cheonggukjang on immunohistochemical reactions in gastrointestinal (GI) tract of rats were investigated. $CD4^+/CD8^+$ immunoreactive cells of cheonggukjang-fed diet groups were more strongly stained in lamina propria of mucosa and submucosa than those of basal diet group. Universal nitric oxide synthase immunoreactive density in colon was mildly stained in surface epithelium and mucous secretory gland, and strongly stained in submucosa and myenteric plexus in muscle layers of all cheonggukjang-fed diet groups. Protein kinase C-${\alpha}$ immunoreactive cells in colons of 15 and 25% cheonggukjang-fed diet groups were more strongly stained in mucosa, submucosa, and muscle layers than those of basal diet group. These results indicate mucosal immune activity, gastrointestinal motility, blood circulation, and physiological activities of enteroendocrine cells in GI tract could be increased with cheonggukjang intake.