• Proceedings of the KIEE Conference
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• 1998.11c
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• pp.770-772
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• 1998

The highest etch rate of Pt film was obtained at 10% $Cl_2$/90% Ar gas mixing ratio in our previous investigation. However, the problems such as the etch residues(fence) remained on the pattern sidewall, low selectivity to oxide as mask and low etch slope were presented. In this paper, the etching by additive $O_2$ gas to 10% $Cl_2$/90% Ar gas base was examined. As a result, the fence-free pattern and high etch slope was observed and the selectivity to oxide increased without decreasing of the etch rate. And the reasons for this phenomenon was investigated by XPS(x-ray photoelectron spectroscopy) surface analysis and plasma characteristic.

• Journal of the Korean Ceramic Society
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• v.31 no.11
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• pp.1396-1400
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• 1994

Electrical properties in the ZnO-Bi2O3-CoO-Zn7Sb2O12 system were investigated with Zn7Sb2O12 content (0.1~2 mol%). The increase of the Zn7Sb2O12 content inhibited the grain growth of ZnO, which showed a narrow grain size distribution of ZnO. The breakdown voltage (Vb) increased markedly with 1 mol% Zn7Sb2O12 addition due to the grain growth control behaviour of the Zn7Sb2O12 . The nonlinear I-V characteristic was significantly influenced by the Zn7Sb2O12 content (or Bi2O3/Zn7Sb2O12 ratio). Addition of 0.5 mol% Zn7Sb2O12 showed the highest nonlinear coefficient ($\alpha$) of 43. The leakage current in prebreakdown region was decreased with increasing Zn7Sb2O12 content.

• 한국정보디스플레이학회:학술대회논문집
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• 2008.10a
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• pp.543-544
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• 2008

In the fabrication of inverted top emission organic light emitting diodes (ITOLEDs), the organic layers are damaged by high-energy plasma sputtering process for transparent top anode. In this study, the plasma process induced damages on metal oxide hole injection layers (HILs) including $WO_3$, $MoO_3$, and $V_2O_5$ as buffer layer are examined. With the result of IV characteristic of hole-only devices, we propose that $MoO_3$ and $V_2O_5$ are stable materials against plasma sputtering process.

• 한국정보디스플레이학회:학술대회논문집
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• 2005.07b
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• pp.1530-1533
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• 2005

We investigated under-gate type carbon nanotube field emitter arrays (FEAs) for back light unit (BLU) in liquid crystal display (LCD). Gate oxide was formed by wet etching of ITO coated glass substrate instead of depositing $SiO_2$ on the glass substrate. Wet etching is easer and simpler than depositing and etching of thick gate oxide to isolate the gate metal from cathode electrode in triode. Field emission characteristic s of triode structure were measured. The maximum current density of 92.5 ${\mu}A/cm^2$ was when the gate and anode voltage was 95 and 2500 V, respectively at the anode-cathode spacing of 1500 ${\mu}m$.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2000.10a
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• pp.59-63
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• 2000

BSCCO thin films are fabricated via a co-deposition process by an ion beam sputtering with an ultra-low growth rate, and sticking coefficients of the respective elements are evaluated. The sticking coefficient of Bi element exhibits a characteristic temperature dependence : almost a constant value of 0.49 below $730^{\circ}C$ and decreases linearly with temperature over $730^{\circ}C$ This temperature dependence can be elucidated from the evaporation and sublimation rates of bismuth oxide, $Bi_2O_3$, from the film surface. It is considered that the liquid phase of the bismuth oxide plays an important role in the Bi(2212) phase formation in the co-deposition process.

• Proceedings of the Korean Institute of Building Construction Conference
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• 2017.05a
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• pp.80-81
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• 2017

The study conducted a thermal conductivity test of magnesium oxide to manufacture boards using absorbent to produce board of radon gas molecules that are absorbed into the indoor air pollutants, which are currently in question, among other indoor air pollutants. Using material are the vermiculite and anthracite, in case of the vermiculite, which results in large porosity due to the expansion, in case of the anthracite, which characteristic generates pore on the matrix. As a result of the experiment, the lowest value was given to 0.6161 kcal/mh℃ which adding vermiculite 10% and anthracite 40%. However, adding vermiculite 40% and anthracite 10%, slightly higher 0.7229 kcal/mh℃, it is deemed the anthracite has more porosity than the vermiculite and, it judged that pore occurrence during the mixing process, appeared that the heat conductivity go down.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.11b
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• pp.300-303
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• 2001

BSCCO thin films are fabricated via a co-deposition process by an ion beam sputtering with an ultra-low growth rate, and sticking coefficients of the respective elements are evaluated. The sticking coefficient of Bi element exhibits a characteristic temperature dependence : almost a constant value of 0.49 below $730^{\circ}C$ and decreases linearly with temperature over $730^{\circ}C$. This temperature dependence can be elucidated from the evaporation and sublimation rates of bismuth oxide, $Bi_{2}O_{3}$, from the film surface. It is considered that the liquid phase of the bismuth oxide plays an important role in the Bi 2212 phase formation in the co-deposition process.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.13 no.1
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• pp.80-84
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• 2000

BSCCO thin films are fabricated via a co-deposition process by an ion beam sputtering with an ultra-low growth rate, and sticking coefficients of the respective elements are evaluated. The sticking coeffi-cient of Bi element exhibits a characteristic temperature dependence : almost a constant value of 0.49 below 73$0^{\circ}C$ and decreases linearly with temperature over 73$0^{\circ}C$. This temperature dependence can be elucidated from the evaporation and sublimation rates of bismuth oxide, Bi\ulcornerO\ulcorner, from the film surface. It is considered that the liquid phase of the bismuth oxide plays an important role in the Bi(2212) phase formation in the co-deposition process.

• Journal of Powder Materials
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• v.8 no.3
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• pp.186-191
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• 2001

Several fabrication processes, corresponding nanostructural features and multifunctionality as well has been investigated for oxide ceramic based nanocomposites with metal nanodispersion (i.e., ceramic/metal nanocomposites). Transition metal (Ni, Co, etc) dispersed alumina and zirconia based nanocomposites have been synthesized by reducing and hot-press sintering of ceramic and metal oxide mixtures prepared by several method. Improved fracture strength (1.1 and 1.9 GPa for $Al_2O_3/Ni$ and $ZrO_2/Ni$ nanocomposites, respectively) of these composites have been achieved according to their nanostructures. In addition, ferromagnetic characteristic has been kept. The variation of magnetization with an applied stress has found to be more sensitive as smaller as the magnetic metal dispersion is. This result thus suggests the possibility of fracture and/or stress sensing of the composites by simple magnetic measurement.

• Journal of Welding and Joining
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• v.32 no.1
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• pp.108-111
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• 2014

Low arc weldability of aluminum alloy is enhanced by applying variable polarity TIG and the result is theoretically investigated to figure out the mechanism. Conventionally, it is well known fact that DCEP (reverse polarity) arc is effective on aluminum welding. The reason is due to oxide layer removal by plasma ion bombardment and therefore it is named as cleaning effect. Another fact of polarity characteristic is that DCEN shows higher heat input efficiency therefore conventional variable polarity arc used to apply DCEP portion as small as possible. However, higher DCEP portion shows bigger weldment in this research and it is explained by adopting a theory of arc concentration on oxide layer with tunneling effect which was not clearly mentioned before in several variable polarity TIG welding research. Disagreement between variable polarity TIG welding result and conventional arc polarity theory is rationally explained for the first time with help of electron emission theory.