• 전기학회논문지
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• 제59권11호
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• pp.2016-2020
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• 2010

Indium-zinc-oxide (IZO) films were deposited at room temperature via RF sputtering with varying the flow rate of additive nitrogen gas ($N_2$). Thin film transistors (TFTs) with an inverted staggered configuration were fabricated by employing the various IZO films, such as $N_2$-added and pure (i.e., w/o $N_2$-added), as active channel layers. For all the deposited IZO films, effects of additive $N_2$ gas on their deposition rates, electrical resistivities, optical transmittances and bandgaps, and chemical structures were extensively investigated. Transfer characteristics of the IZO-based TFTs were measured and characterized in terms of the flow rate of additive $N_2$ gas. The experimental results indicated that the transistor action occurred when the $N_2$-added (with $N_2$ flow rate of 0.4-1.0 sccm) IZO films were used as the active layer, in contrast to the case of using the pure IZO film.

• Journal of Periodontal and Implant Science
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• 제41권6호
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• pp.263-272
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• 2011

A number of surface modification techniques using immobilization of biofunctional molecules of Titanium (Ti) for dental implants as well as surface properties of Ti and Ti alloys have been developed. The method using passive surface oxide film on titanium takes advantage of the fact that the surface film on Ti consists mainly of amorphous or low-crystalline and nonstoichiometric $TiO_2$. In another method, the reconstruction of passive films, calcium phosphate naturally forms on Ti and its alloys, which is characteristic of Ti. A third method uses the surface active hydroxyl group. The oxide surface immediately reacts with water molecules and hydroxyl groups are formed. The hydroxyl groups dissociate in aqueous solutions and show acidic and basic properties. Several additional methods are also possible, including surface modification techniques, immobilization of poly(ethylene glycol), and immobilization of biomolecules such as bone morphogenetic protein, peptide, collagen, hydrogel, and gelatin.

• Journal of Welding and Joining
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• 제5권2호
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• pp.17-26
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• 1987

In this study, the experiments were carried out for the purpose of establishment of the arc sparing method which reducing oxides or oxide film by using the inert gas as the carrier gas of atomizing particles. Main results obtained are as follows; 1. Oxides and oxide film which lower the adhesion strength are largely reduced by using the inert gas as the carrier gas of atomizing particles, and adhesion strength of coating film are improved. 2. The coating film characteristics appear to be no difference between the inert gas arc spraying in air environment and that in argon gas environment. 3. Inert gas arc spraying using argon as the carrie gas has higher reduction rate of composition element in coating film than compressed air spraying does.

• 대한전자공학회:학술대회논문집
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• 대한전자공학회 1998년도 추계종합학술대회 논문집
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• pp.597-600
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• 1998

When a semiconductor(pMOSFET) sensor is exposed to ionizing radiation, electrons/holes are generated in its oxide layer. By the phenomenon of hole traps in oxide layer during their move, the characteristics of semiconductor is changed. This paper describes the output characteristic changes of two kind of pMOSFET(domestic, japan) after C0-60 ${\gamma}$-irradiation on them for their application as radiation accumulated dose monitoring sensors. We found the threshold voltage shifts (VT) of pMOSFETs in proportion to irradiated radiation dose and their linear properties. These results make us confirm that we will be able to develop good accumulated radiation dose monitoring sensors.

• 한국레이저가공학회지
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• 제13권4호
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• pp.21-24
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• 2010

Plasma electrolyte oxidation (PEO) surface treatment of magnesium alloy, an optical analysis method through reflection spectra were measured. As a result, the sample is formed on the membrane form of MgO or $Mg(OH)_2$ is in the form of oxide. The wavelength energy of surface treatment of magnesium alloy sample observed 0.23eV red shift. The measured reflectance spectra observed with the three different signals. This is due to $Mg(OH)_2$ oxide layer formed on porous hole.

• Bulletin of the Korean Chemical Society
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• 제32권4호
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• pp.1133-1137
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• 2011

Ordered array of gold nanoparticles (Au NPs) over ITO glass was investigated in terms of ITO pretreatment, particle size, and diamines with different chain length. Owing to the indium-tin-oxide (ITO) layer coated on the glass, the substrate surface has a limited number of hydroxyl groups which can produce functionalized amine groups for Au binding, which resulted in the loosely-packed array of Au NPs on the ITO surface. Diamine ligand as a molecular linker was introduced to enhance the lateral binding of adjacent Au NPs immobilized on the amine-functionalized ITO glass, consequently leading to the densely-packed array of Au NPs over the ITO substrate. The molecular bridging effect was strengthened with the increase of chain length of diamines: C-12 > C-8. The packing density of small Au NPs (< 40 nm) was significantly increased with the increase of C-8 diamine, but large Au NPs (> 60 nm) did not produce densely-packed array on the ITO glass even for the dosage of C-12 diamine.

• 한국정밀공학회:학술대회논문집
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• 한국정밀공학회 2004년도 추계학술대회 논문집
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• pp.351-354
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• 2004

This work presents a simple and cost-effective approach for maskless fabrication of positive-tone silicon master for the replica molding of hyperfine elastomeric channel. Positive-tone silicon masters were fabricated by a maskless fabrication technique using the combination of nanoscratch by Nanoindenter ⓡ XP and XOH wet etching. Grooves were machined on a silicon surface coated with native oxide by ductile-regime nanoscratch, and they were etched in a 20 wt％ KOH solution. After the KOH etching process, positive-tone structures resulted because of the etch-mask effect of the amorphous oxide layer generated by nanoscratch. The size and shape of the positive-tone structures were controlled by varying the etching time (5, 15, 18, 20, 25, 30 min) and the normal loads (1, 5 mN) during nanoscratch. Moreover, the effects of the Berkovich tip alignment (0, 45$^{\circ}$) on the deformation behavior and etching characteristic of silicon material were investigated.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2000년도 춘계학술대회 논문집 전자세라믹스 센서 및 박막재료 반도체재료 일렉트렛트 및 응용기술
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• pp.152-156
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• 2000

Bi-thin films are fabricated by an ion beam sputtering, and sticking coefficients of the respective elements are evaluated. The sticking coefficient of Bi element exhibits a characteristic temperature dependence : almost a constant value of 0.49 below $730^{\circ}C$ and decreases linearly with temperature over $730^{\circ}C$. This temperature dependence can be elucidated from the evaporation and sublimation rates of bismuth oxide, $Bi_2O_3$, from the film surface. It is considered that the liquid phase of the bismuth oxide plays an important role in the Bi(2212) phase formation in the co-deposition process.

• 한국재료학회:학술대회논문집
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• 한국재료학회 2003년도 춘계학술발표강연 및 논문개요집
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• pp.79-79
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• 2003

최근 CMOS(Complementary Metal Oxide Semiconductor) 능동소자에 사용되는 MOS-FET (Metal Oxide Semiconductror Field Effect Transitror)의 전체적인 크기 감소추세에 따라 금속 전극과 반도체 사이의 절연층 두께 감소가 요구되고 있다. 현재 보편적으로 사용되고 있는 SiO$_2$층은 두께 감소에 따른 터널링 전류의 증가로 더 이상의 두께 감소를 기대하기 어려운 상태이다. 이러한 배경에서 최근 터널링 전류를 충분히 감소시키면서 요구되는 절연특성을 얻을 수 있는 새로운 고유전 물질 (high-k dielectric material)에 대한 연구가 이루어지고 있다. 현재까지 연구되어온 고유전 물질 중, 고유전 상수, 큰 밴드갭, Si과의 열적 안정성을 갖는 물질로 ZrO$_2$가 주목을 받고 있다. 본 연구에서는 Metal Organic Molecular Beam Epitaxy (MOMBE) 방법을 이용한 ZrO$_2$ 층의 성장조건 및 특성을 평가하고자 한다.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2001년도 하계학술대회 논문집
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• pp.749-752
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• 2001

Very fine cobalt oxide xerogel and ambigel powder were prepared using a unique solution chemistry associated with the sol-gel process. The mesoporous structure of the initial gel is maintained by removing fluid under conditions where the capillary forces that result extraction are either low or no existent, are either low or nonexistent. Controlling both the pore and solid architecture on the nanoscale offers a strategy for the design of supercapacitor. The results materials determine by using electrode that mixed ketjen black and PVdF. But CoO$\_$x/ have the low voltage, so we experimente to change electrolyte and various concentration.