• Title/Summary/Keyword: Oxide addition

Search Result 2,450, Processing Time 0.029 seconds

On the BaTiO$_3$ Dielectric Ceramics (BaTiO$_3$ 유전자기에 대하여)

  • 박순자
    • Journal of the Korean Ceramic Society
    • /
    • v.12 no.2
    • /
    • pp.10-14
    • /
    • 1975
  • Bodies whose compositions are in the ternary system BaCO3-TiO2-SnO2 containing from 5 to 90 mol % stannic oxide were prepared to improve the thermal characteristics of barium titanate dielectrics. Bodies having dielectric constant (K) of 2100 at 1 KHz, low negative temperature coefficients of 1500ppm up to about 9$0^{\circ}C$, Curie Temperature of 2$0^{\circ}C$, and dissipation factor of 0.2-0.4% were obtained with addition of 15 mole % stannic oxide.

  • PDF

The Study for the Single-based Propellant Shelf Life extension (단기추진제 저장수명 연장을 위한 방안 연구)

  • Bong, Ha-Gyu;Yoon, Keun-Sig
    • Journal of Applied Reliability
    • /
    • v.5 no.3
    • /
    • pp.357-371
    • /
    • 2005
  • Nitrogen oxide gases which were produced by spontaneous reaction of nitrocellulose (NC) in the single base propellant accelerate the decomposition of propellant, and result in the reduction of shelf life, The amount of nitrogen oxide was reduced by the addition of $0.3wt\%$ CaCO3 to conventional stabilizer(DPA) which extended the shelf life of the single base propellant as much as twice compared with commercial propellant.

  • PDF

An Approach to Develop New Ternary Oxide Phosphors;Reduction of Defects by Impurity Addition

  • Yamamoto, Hajime;Okamoto, Shinji
    • 한국정보디스플레이학회:학술대회논문집
    • /
    • 2002.08a
    • /
    • pp.239-242
    • /
    • 2002
  • Luminescence efficiency of phosphors, $SrTiO_3;Pr^{3+}$ and $SrIn_2O_4:Pr^{3+}$, is increased remarkably by III-group impurities. This effect is explained by a picture that carriers thermally released from impurity-induced traps supply energy to $Pr^{3+}$ ions. The impurities also improve carrier transport efficiency by reducing lattice defects. This picture indicates a possibility to develop new ternary oxide phosphors.

  • PDF

A Study on the Ge Substituted LAS Ceramics Using Metla Alkoxide (금속알콕사이드를 이용한 LAS계 내열세라믹스의 제조시 Ge 성분의 치환에 관한 연구)

  • 장성중;김형태;이응상
    • Journal of the Korean Ceramic Society
    • /
    • v.32 no.11
    • /
    • pp.1233-1240
    • /
    • 1995
  • LAS system, which is difficult to be sintered, was densified by using the powder synthesized from metal alkoxides. Sinterability, thermal and mechanical properties were improved through synthesizing the complex oxide powder from the addition of Ge as an alkoxide. As a result, the synthesizing and sintering temperature of the LAS system lowered by about 10$0^{\circ}C$ and its modulus of rupture (MOR) increased twice higher compared to the sample from the oxide by the direct method.

  • PDF

Structural and Electrical Features of Solution-Processed Li-doped ZnO Thin Film Transistor Post-Treated by Ambient Conditions

  • Kang, Tae-Sung;Koo, Jay-Hyun;Kim, Tae-Yoon;Hong, Jin-Pyo
    • Proceedings of the Korean Vacuum Society Conference
    • /
    • 2012.08a
    • /
    • pp.242-242
    • /
    • 2012
  • Transparent oxide semiconductors are increasingly becoming one of good candidates for high efficient channel materials of thin film transistors (TFTs) in large-area display industries. Compare to the conventional hydrogenated amorphous silicon channel layers, solution processed ZnO-TFTs can be simply fabricated at low temperature by just using a spin coating method without vacuum deposition, thus providing low manufacturing cost. Furthermore, solution based oxide TFT exhibits excellent transparency and enables to apply flexible devices. For this reason, this process has been attracting much attention as one fabrication method for oxide channel layer in thin-film transistors (TFTs). But, poor electrical characteristic of these solution based oxide materials still remains one of issuable problems due to oxygen vacancy formed by breaking weak chemical bonds during fabrication. These electrical properties are expected due to the generation of a large number of conducting carriers, resulting in huge electron scattering effect. Therefore, we study a novel technique to effectively improve the electron mobility by applying environmental annealing treatments with various gases to the solution based Li-doped ZnO TFTs. This technique was systematically designed to vary a different lithium ratio in order to confirm the electrical tendency of Li-doped ZnO TFTs. The observations of Scanning Electron Microscopy, Atomic Force Microscopy, and X-ray Photoelectron Spectroscopy were performed to investigate structural properties and elemental composition of our samples. In addition, I-V characteristics were carried out by using Keithley 4,200-Semiconductor Characterization System (4,200-SCS) with 4-probe system.

  • PDF

Sr-doped AlOx gate dielectrics enabling high-performance flexible transparent thin film transistors by sol-gel process

  • Kim, Jaeyoung;Choi, Seungbeom;Kim, Yong-Hoon
    • Proceedings of the Korean Vacuum Society Conference
    • /
    • 2016.02a
    • /
    • pp.301.2-301.2
    • /
    • 2016
  • Metal-oxide thin-film transistors (TFTs) have gained a considerable interest in transparent electronics owing to their high optical transparency and outstanding electrical performance even in an amorphous state. Also, these metal-oxide materials can be solution-processed at a low temperature by using deep ultraviolet (DUV) induced photochemical activation allowing facile integration on flexible substrates [1]. In addition, high-dielectric constant (k) inorganic gate dielectrics are also of a great interest as a key element to lower the operating voltage and as well as the formation of coherent interface with the oxide semiconductors, which may lead to a considerable improvement in the TFT performance. In this study, we investigated the electrical properties of solution-processed high-k strontium-doped AlOx (Sr-AlOx) gate dielectrics. Using the Sr-AlOx as a gate dielectric, indium-gallium-zinc oxide (IGZO) TFTs were fabricated and their electrical properties are analyzed. We demonstrate IGZO TFTs with a 10-nm-thick Sr-AlOx gate dielectric which can be operated at a low voltage (~5 V).

  • PDF

Regeneration of Spent Nickel Catalyst for Hydrogenation (수소화 반응용 니켈 폐촉매의 재생)

  • 전종기;박영권;김주식
    • Resources Recycling
    • /
    • v.13 no.3
    • /
    • pp.27-36
    • /
    • 2004
  • Nickel oxide was recovered through roasting of a spent catalyst for hydrogenation reaction. Nickel on Kieselguhr catalysts were prepared by a precipitation method after a treatment of the recovered-nickel oxide with an acid. Effects of roasting temperature of the spent catalyst on recovery of nickel oxide was investigated. Most of nickel oxide could be recovered through roasting of the spent catalyst at $1000^{\circ}C$. In regeneration of catalysts by the precipitation method after the treatment of nickel oxide with an acid, the effect of promoter, precipitation condition and reduction condition on catalytic performance in vegetable oil hydrogenation were investigated. The addition of CaO or $Ce_2$$O_3$ resulted in an increase of catalytic activity.

Comparison of Anodic Community in Microbial Fuel Cells with Iron Oxide-Reducing Community

  • Yokoyama, Hiroshi;Ishida, Mitsuyoshi;Yamashita, Takahiro
    • Journal of Microbiology and Biotechnology
    • /
    • v.26 no.4
    • /
    • pp.757-762
    • /
    • 2016
  • The group of Fe(III) oxide-reducing bacteria includes exoelectrogenic bacteria, and they possess similar properties of transferring electrons to extracellular insoluble-electron acceptors. The exoelectrogenic bacteria can use the anode in microbial fuel cells (MFCs) as the terminal electron acceptor in anaerobic acetate oxidation. In the present study, the anodic community was compared with the community using Fe(III) oxide (ferrihydrite) as the electron acceptor coupled with acetate oxidation. To precisely analyze the structures, the community was established by enrichment cultures using the same inoculum used for the MFCs. High-throughput sequencing of the 16S rRNA gene revealed considerable differences between the structure of the anodic communities and that of the Fe(III) oxide-reducing community. Geobacter species were predominantly detected (>46%) in the anodic communities. In contrast, Pseudomonas (70%) and Desulfosporosinus (16%) were predominant in the Fe(III) oxide-reducing community. These results demonstrated that Geobacter species are the most specialized among Fe(III)-reducing bacteria for electron transfer to the anode in MFCs. In addition, the present study indicates the presence of a novel lineage of bacteria in the genus Pseudomonas that highly prefers ferrihydrite as the terminal electron acceptor in acetate oxidation.

Synthesis of Alumina-Grafted Manganese Oxide Particles Using Surfactants through Coprecipitation Method and Their Thermal Properties

  • Kwon, Boseong;Park, Jun-Hwan;Jang, Seong-Cheol;Oh, Seong-Geun
    • Bulletin of the Korean Chemical Society
    • /
    • v.34 no.12
    • /
    • pp.3559-3564
    • /
    • 2013
  • Alumina particles were grafted onto the surface of manganese oxide particles via the coprecipitation process using surfactant and cosurfactant. The phase of Mn/Al salts (Phase I) and the phase of precipitation agent (Phase II) were prepared in aqueous surfactant solution, separately. Phase II was added into Phase I and the reaction was performed to form the precursors of composites through hydrogen bonding between $Mn(OH)_2$ and $Al(OH)_3$ prepared by the reaction of Mn/Al salts with the precipitation agent. The alumina-grafted manganese oxide particles were obtained as a final product after calcination. The concentrations of Al salt and surfactant were varied to investigate their effects on the formation and the crystallinity of composites. In addition, the crystal structure of products could be controlled by changing the calcination temperature. Through thermal analyses, it was found that the thermal stability of manganese oxide was improved by the introduction of alumina on its surface.

Hypoxia Enhances Nitric Oxide Synthesis by Upregulation of Inducible Nitric Oxide Synthase in Endothelial Cells

  • Rhee, Ki-Jong;Gwon, Sun-Yeong;Lee, Seunghyung
    • Biomedical Science Letters
    • /
    • v.19 no.3
    • /
    • pp.180-187
    • /
    • 2013
  • Hypoxia is an integral part of the environment during luteolysis. In this study we examined whether hypoxia could directly stimulate endothelial cells to produce nitric oxide (NO). Endothelial cells were cultured in hypoxic (5% $O_2$) or normoxic (20% $O_2$) conditions and the levels of total NO, inducible NO and endothelial NO was measured. We found that hypoxia but not normoxia upregulated NO production. The increased NO levels correlated with increased inducible NO synthase (iNOS) expression whereas expression of endothelial NOS (eNOS) expression remained constant. Addition of the iNOS specific inhibitor 1400W to hypoxic cultures prevented NO production suggesting that hypoxia-induced NO production in endothelial cells was due mainly to upregulation of iNOS. We also found that prostaglandin $F_{2{\alpha}}$ (PGF) production was unaffected by hypoxia suggesting that upregulation of NO was not due to increased synthesis of PGF. In summary, we report that endothelial cells cultured under hypoxic conditions produce NO via the iNOS pathway. This study provides the importance of the relation between the hypoxic environment and the induction of NO by endothelial cells during regression of the corpus luteum in the ovary.