• Title/Summary/Keyword: Oxide Scale

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Crystallite Size Measurement of Uranium Oxide Fuel Powders by Neutron Diffraction (중성자 회절에 의한 산화우라늄 핵연료 분말의 결정크기 측정)

  • 류호진;강권호;문제선;송기찬;최용남
    • Journal of Powder Materials
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    • v.10 no.5
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    • pp.318-324
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    • 2003
  • The nano-scale crystallite sizes of uranium oxide powders in simulated spent fuel were measured by the neutron diffraction line broadening method in order to analyze the sintering behavior of the dry process fuel. The mixed $UO_2$ and fission product powders were dry-milled in an attritor for 30, 60, and 120 min. The diffraction patterns of the powders were obtained by using the high resolution powder diffractometer in the HANARO research reactor. Diffraction line broadening due to crystallite size was measured using various techniques such as the Stokes' deconvolution, profile fitting methods using Cauchy function, Gaussian function, and Voigt function, and the Warren-Averbach method. The non-uniform strain, stacking fault and twin probability were measured using the information from the diffraction pattern. The realistic crystallite size could be obtained after separation of the contribution from the non-uniform strain, stacking fault and twin.

Fabrication and performance of 100 m Class Bi-2223 High Temperature Superconducting Tape (100 m급 Bi-2223 고온초전도 선재 제조 및 특성)

  • 하홍수;오상수;하동우;장현만;이남진;류강식;이준석
    • Progress in Superconductivity and Cryogenics
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    • v.1 no.2
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    • pp.15-19
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    • 1999
  • For large scale applications of high temperature superconductor (HTS) such as transmission cables, motors and generators, long length of flexible HTS conductor is required. Currently, Bi-2223 HTS tape is capable of being fabricated in longer than 100 m length by industrial processes. In this study, we fabricated 100 m 19 filamentary Bi-2223 ($Bi_{1.8}Pb_{0.4}Sr_2Ca_2O_{10+x}$) HTS tape by PIT (Power in Tube) process. Critical current(IC) of this long length tape was measured 18.5 A at 77K, self field. Critical current of 100 m length tape was mainly resulted from the increase of inhomogeneity in oxide from the increase of inhomogeneity in oxide layer. Engineering critical current (Je=Ic/total tape cross-section area) that is important factor for practical applications and fabrication cost was measured 2.2 kA/cm2.

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Electrochromism of Reactive Magnetron Sputtered Tungsten Oxide Thin Films (반응성 마그네트론 스퍼터링법에 의해 증착된 $WO_3$ 박막의 일렉트로크로믹 특성)

  • Lee, Kee-Oh;Choi, Young-Kyu;Chung, Gwiy-Sang
    • Proceedings of the KIEE Conference
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    • 1998.07d
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    • pp.1346-1348
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    • 1998
  • Tungsten oxide($WO_3$) thin films were prepared by reactive magnetron sputtering in an $Ar/O_2$ atmosphere from a compressed powder $WO_3$ target and their electrochromic(EC) phenomena were investigated. PEO-$LiClO_4$-PC polymer electrolyte can easely be formed into thin films and showed high transmittance. Such electrolyte have electrochromic properties suitable for large-scale electrochromic devices. For the devices using $WO_3$ thin films of 1500, 2500, $4000{\AA}$ thickness with glass/ITO/$WO_3$/PEO-$LiClO_4$-PC/ITO/glass structure, an optical modulation of $50{\sim}60%$ were obtained at a potential range of $1{\sim}2V$. It has shown that transmittance and reflectance of light could be electrically controlled by low applied voltage.

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Simulation of Quantum Effects in the Nano-scale Semiconductor Device

  • Jin, Seong-Hoon;Park, Young-June;Min, Hong-Shick
    • JSTS:Journal of Semiconductor Technology and Science
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    • v.4 no.1
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    • pp.32-40
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    • 2004
  • An extension of the density-gradient model to include the non-local transport effect is presented. The governing equations can be derived from the first three moments of the Wigner distribution function with some approximations. A new nonlinear discretization scheme is applied to the model to reduce the discretization error. We also developed a new boundary condition for the $Si/SiO_2$ interface that includes the electron wavefunction penetration into the oxide to obtain more accurate C-V characteristics. We report the simulation results of a 25-nm metal-oxide-semiconductor field-effect transistor (MOSFET) device.

A Study on Failure Prevention of Radiant Heater Tube (복사전열 가열로 튜브의 파손방지에 대한 연구)

  • 윤기봉;심상훈;유홍선;오현환
    • Journal of the Korean Society of Safety
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    • v.13 no.1
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    • pp.47-53
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    • 1998
  • Radiant heater tubes with an inside burner are designed to transfer the heat generated from the burner to the outside of the tube by radiation. Hence, tube metal must suffer high temperature of approximately 900-$1000^{\circ}C$. The radiant tube is usually manufactured by centrifugal casting with high Ni-Cr alloys. In this study, failure analysis results of the radiant tube are reported. Failure mechanism of the tube was investigated by visual observation of the foiled tube, metallographic study of the cracked region and chemical analysis of tube metal and oxide scales. It was argued that the main cause of the cracking is repeated oxidation of the tube metal located beneath the thick oxide scale. Oxidation was caused by abnormally high operating temperature which can be verified by aged microstructure and internal void formation.

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Effects of Cr and Nb on the nigh Temperature Oxidation of TiAl

  • D.B. Lee;K.B. Park;M. Nakamura
    • Transactions of Materials Processing
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    • v.8 no.3
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    • pp.319-319
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    • 1999
  • From isothermal and cyclic oxidation tests on thermomechanically treated Ti-5%Al, Ti47%Al-4%Cr, and Ti-48%Al-2%Cr-2%Nb alloys at 800, 900, 1000℃ in air, it was found that Ti-48%Al-2%Cr-2%Nb and Ti-47%Al-4%Cr had the best and the worst oxidation resistance, respectively. The oxide scales consisted primarily of TiO₂and Al₂O₃, with and without a small amount of dissolved Cr and 7b ions, depending on the alloy composition. These ions were slightly enriched inside the inner oxide layer, and strongly enriched around the scale-matrix interface. The outer TiO₂-rich layer was formed by the outward diffusion of Ti ions, while the inner (TiO₂+A1₂O₃,) mixed layer was formed by the inward transport of oxygen. The outward movement of Al ions farmed the intermediate Al₂O₃-rich Iayer, above talc prepared alloys.

The Effect of Small Additions of Zr, Cr, Mg, Al, and Si on the Oxidation of 6:4 Brass

  • 이동복;문재진
    • Transactions of Materials Processing
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    • v.8 no.3
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    • pp.327-327
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    • 1999
  • The oxidation behavior of 60%Cu-40%Zn brass haying small amounts of Zr, Cr, Mg, Al, and Si was studied between 873 and 1043 K in air. The alloying element of Mg was harmful, while other alloying elements were beneficial to oxidation resistance. Particularly, the simultaneous addition of Al and Si decreased the oxidation rate drastically. During oxidation, Zr formed ZrO₂, Cr formed CuCr₂O₄, Mg formed MgO, Al formed A1₂CuO₄, and Si formed amorphous SiO₂. These oxides were incorporated in the oxide scale composed predominantly of ZnO. The oxide scales formed on all the tested alloyswere prone to cracking, wrinkling, and spallation.

Fabrication of Polymer Nanofibers using Electrospinning (전기방사를 이용한 PEO 나노섬유 제조)

  • Kim, G.T.;Ahn, Y.C.;Lee, J.K.;Kattamuri, Nirupama;Sung, C.M.
    • Journal of ILASS-Korea
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    • v.8 no.2
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    • pp.31-37
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    • 2003
  • Polymeric fibers with nanometer-scale diameters are produced by electrospinning method. When the electrical forces at the surface of a polymer solution or melt overcome the surface tension, then electrospinning occurs and nanofibers are made. Polyethylene oxide(PEO) have been electrospun in our laboratory Electrospun PEO fibers are observed by scanning electron microscopy or transmission electron microscopy In thl:; study. the average diameter of the electrospun fibers decreases with decreasing PEO concentration and increasing electric field strength. The optimal conditions for producing uniform PEO 100nm fibers are the 10wt% PEO concentration at a voltage 25 to 30kV and a distance of 10cm from tip to collector.

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High-temperature Oxidation of Nano-multilayered AlTiSiN Thin Films deposited on WC-based carbides

  • Hwang, Yeon Sang;Lee, Dong Bok
    • Corrosion Science and Technology
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    • v.12 no.3
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    • pp.119-124
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    • 2013
  • Nano-multilayered, crystalline AlTiSiN thin films were deposited on WC-TiC-Co substrates by the cathodic arc plasma deposition. The deposited film consisted of wurtzite-type AlN, NaCl-type TiN, and tetragonal $Ti_2N$ phases. Their oxidation characteristics were studied at 800 and $900^{\circ}C$ for up to 20 h in air. The WC-TiC-Co oxidized fast with large weight gains. By contrast, the AlTiSiN film displayed superior oxidation resistance, due mainly to formation of the ${\alpha}-Al_2O_3$-rich surface oxide layer, below which an ($Al_2O_3$, $TiO_2$, $SiO_2$)-intermixed scale existed. Their oxidation progressed primarily by the outward diffusion of nitrogen, combined with the inward transport of oxygen that gradually reacted with Al, Ti, and Si in the film.

The Analysis of Three-dimensional Oxidation Process with Elasto-viscoplastic Model

  • Lee Jun-Ha;Lee Hoong-Joo
    • Transactions on Electrical and Electronic Materials
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    • v.5 no.6
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    • pp.215-218
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    • 2004
  • This paper presents a three-dimensional numerical simulation for thermal oxidation process. A new elasto-viscoplastic model for robust numerical oxidation simulation is proposed. The three-dimensional effects of oxidation process such as mask lifting effect and corner effects are analyzed. In nano-scale process, the oxidant diffusion is punched through to the other side of the mask. The mask is lifted so the thickness of oxide region is greatly enhanced. The compressive pressure during the oxidation is largest in the mask corner of the island structure. This is because the masked area near the corner is surrounded by an area larger than the others in the island structure. This stress induces the retardation of the oxide growth, especially at the masked corner in the island structure.