• Current Photovoltaic Research
• /
• 제5권1호
• /
• pp.15-19
• /
• 2017

The fossil fuel power consumption generates $CO_2$, which causes the problems such as global warming. Also, the increase in energy consumption has accelerated the depletion of the fossil fuels, and renewable energy is attracting attention. Among the renewable energies, the solar energy gets a lot of attention as the infinite clean energy source. But, the supply level of solar cell is insignificant due to high cost of generation of electric power in comparison with fossil fuels. Thus several researchers are recently doing the research on ultra-low-cost solar cells. Also, $Cu_2O$ is one of the applied materials as an absorption layer in ultra-low-cost solar cells. Cuprous oxide ($Cu_2O$) is highly desirable semiconductor oxide for use in solar energy conversion due to its direct band gap ($E_g={\sim}2.1eV$) and a high absorption coefficient that absorbs visible light of wavelengths up to 650 nm. In addition, $Cu_2O$ has several advantages such as non-toxicity, low cost and can be prepared with simple and cheap methods on large scale. In this work, we fabricated the $Cu_2O$ thin films by reactive sputtering method. The films were deposited with a Cu target with variable parameters such as substrate temperature, rf-power, and annealing condition. Finally, we confirmed the structural properties of thin films by XRD and SEM.

• 한국결정학회:학술대회논문집
• /
• 한국결정학회 2002년도 정기총회 및 추계학술연구발표회
• /
• pp.42-43
• /
• 2002

반도체 디바이스의 발전은 높은 직접화 및 동작 속도를 추구하고 있으며, 이를 위해서 MOSFET의 scale down시 발생되는 문제를 해결해야만 한다. 특히, Channel이 짧아짐으로써 발생하는 device의 열화현상으로 동작전압의 조절이 어려워 짐을 해결해야만 하며, gate oxide 두께를 줄임으로써 억제할 수 있다고 알려져 왔다. 현재, gate oxide으로 사용되고 있는 SiO2박막은 비정질로써 ～8.7 eV의 높은 band gap과 Si기판 위에서 성장이 용이하며 안정하다는 장점이 있으나, 두께가 1.6 nm 이하로 얇아질 경우 전자의 direct Tunneling에 의한 leakage current 증가와 gate impurity인 Boron의 channel로의 확산, 그리고 poly Si gate의 depletion effect[1,2] 등의 문제점으로 더 이상 사용할 수 없게 된다. 2001년 ITRS에 의하면 ASIC제품의 경우 2004년부터 0.9～l.4 nm 이하의 EOT가 요구된다고 발표하였다. 따라서, gate oxide의 물리적인 두께를 증가시켜 전자의 Tunneling을 억제하는 동시에 유전막에 걸리는 capacitance를 크게 할 수 있다는 측면에서 high-k 재료를 적용하기 위한 연구가 진행되고 있다[3]. High-k 재료로 가능성 있는 절연체들로는 A1₂O₃, Y₂O₃, CeO₂, Ta₂O, TiO₂, HfO₂, ZrO₂,STO 그리고 BST등이 있으며, 이들 재료 중 gate oxide에 적용하기 위해 크게 두 가지 측면에서 고려해야 하는데, 첫째, Si과 열역학적으로 안정하여 후속 열처리 공정에서 계면층 형성을 배제하여야 하며 둘째, 일반적으로 high-k 재료들은 유전상수에 반비례하는 band gap을 갖는 것으로 알려줘 있는데 이 Barrier Height에 지수적으로 의존하는 leakage current때문에 절연체의 band gap이 낮아서는 안 된다는 점이다. 최근 20이상의 유전상수와 ～5 eV 이상의 Band Gap을 가지며 Si기판과 열역학적으로 안정한 ZrO₂[4], HfiO₂[5]가 관심을 끌고 있다. HfO₂은 ～30의 고유전상수, ～5.7 eV의 높은 band gap, 실리콘 기판과의 열역학적 안전성 그리고 poly-Si와 호환성등의 장점으로 최근 많이 연구가 진행되고 있다. 또한, Hf은 SiO₂를 환원시켜 HfO₂가 될 수 있으며, 다른 silicide와 다르게 Hf silicide는 쉽게 산화될 수 있는 점이 보고되고 있다.

• 한국세라믹학회지
• /
• 제35권1호
• /
• pp.55-65
• /
• 1998

Ag-36.8a%Cu-7.4at%Ti 조성의 브레이징 합금을 Si3N4 기판위에 브레이징한 후 브레이징 합금의 산화거동을 대기중 400, 500, 600$^{\circ}C$에서 조사하였다. 브레이징 합금의 구성원소인 Ag는 산화되지 않고 Cu와 Ti가 산화되며, 산화거동은 포물선적 산화법칙을 따랐다. 브레이징 합금의 산화에 따른 활성화에너지는 80kj/ mol 으로서 소량 첨가된 활성원소인 Ti에 의하여 순수한 Cu의 산화시 활성화에너지보다 감소하였다. 산화 초기에 생성되는 외부산화물은 Cu이온의 외부확산에 의해 성장이 지배되는 Cu산화물로 구성되어 있었다. 산화기간이 경과함에 따라 외부산화물층 아래에서 Cu의 농도는 감소되고 Ag의 농도는 증가하는 농도구배가 발생하여, 브레이징 합금의 산화물은 Cu산화물층(CuO)/Ag잉여층/Cu산화물층(Cu2O)/Ag잉여층의 다층구조를 갖았다. 또한, 분위기중의 산소는 Cu산화물 및 Ag잉여층을 통해 브레이징 합금 내부로 확산되어 브레이징 합금내의 Ti와 반응하여 내부산화물 TiO2를 생성하였다.

• Journal of Magnetics
• /
• 제20권2호
• /
• pp.103-109
• /
• 2015

In this study, the authors attempted to produce a medical radiation shielding fiber that can be produced at a nanosize scale and that is, unlike lead, harmless to the human body. The performance of the proposed medical radiation shielding fiber was then evaluated. First, diamagnetic bismuth oxide, an element which, among elements that have a high atomic number and density, is harmless to the human body, was selected as the shielding material. Next, 10-100 nm sized nanoparticles in powder form were prepared by ball milling the bismuth oxide ($Bi_2O_3$), the average particle size of which is $1-500{\mu}m$, for approximately 10 minutes. The manufactured bismuth oxide was formed into a colloidal solution, and the radiation shielding fabric was fabricated by curing after coating the solution on one side or both sides of the fabric. The thicknesses of the shielding sheets prepared with bismuth oxide were 0.1, 0.2, 0.3, 0.4, 0.5, 0.6, 0.7, 0.8, and 1.0 mm. An experimental method was used to measure the absorbed dose and irradiation dose by using the lead equivalent test method of X-ray protection goods presented by Korean Industrial Standards; the resultant shielding rate was then calculated. From the results of this study, the X-ray shielding effect of the shielding sheet with 0.1 mm thickness was about 55.37% against 50 keV X-ray, and the X-ray shielding effect in the case of 1.0 mm thickness showed shielding characteristics of about 99.36% against 50 keV X-ray. In conclusion, it is considered that nanosized-bismuth radiation shielding fiber developed in this research will contribute to reducing the effects of primary X-ray and secondary X-ray such as when using a scattering beam at a low level exposure.

• 한국전기전자재료학회논문지
• /
• 제11권1호
• /
• pp.33-40
• /
• 1998

The composite SiO$_2$/Si$_3$N$_4$/SiO$_2$(ONO) film formed by oxidation on nitride film has been widely studied as DRAM stacked capacitor multi-dielectric films. Load lock(L/L) LPCVD system by HF cleaning is used to improve electrical capacitance and to scale down of effective thickness for memory device, but is brings a new problem. Nitride film deposited using HF cleaning shows selective deposition on poly silicon and oxide regions of capacitor. This problem is avoidable by carpeting chemical oxide using $H_2O$$_2$cleaning before nitride deposition. In this paper, we study the limit of nitride thickness for abnormal oxidation and the initial deposition time for nitride deposition dependent on underlayer materials. We proposed an advanced fabrication process for stacked capacitor in order to avoid selective deposition problem and show the usefulness of nitride deposition using L/L LPCVD system by $H_2O$$_2$cleaning. The natural oxide thickness on polysilicon monitor after HF and $H_2O$$_2$cleaning are measured 3~4$\AA$, respectively. Two substrate materials have the different initial nitride deposition times. The initial deposition time for polysilicon is nearly zero, but initial deposition time for oxide is about 60seconds. However the deposition rate is constant after initial deposition time. The limit of nitride thickness for abnormal oxidation under the HF and $H_2O$$_2$cleaning method are 60$\AA$, 48$\AA$, respectively. The results obtained in this study are useful for developing ultra thin nitride fabrication of ONO scaling and for avoiding abnormal oxidation in stacked capacitor application.

• 한국전기전자재료학회논문지
• /
• 제36권3호
• /
• pp.233-240
• /
• 2023

p-type Tunnel Oxide Passivating Contacts (TOPCon) solar cell is fabricated with a poly-Si/SiO_x structure. It simultaneously achieves surface passivation and enhances the carriers' selective collection, which is a promising technology for conventional solar cells. The quality of passivation is depended on the quality of the tunnel oxide layer at the interface with the c-Si wafer, which is affected by the bond of SiO formed during the subsequent annealing process. The highest cell efficiency reported to date for the laboratory scale has increased to 26.1%, fabricated by the Institute for Solar Energy Research. The cells used a p-type float zone silicon with an interdigitated back contact (IBC) structure that fabricates poly-Si and SiO_x layer achieves the highest implied open-circuit voltage (iV_oc) is 750 mV, and the highest level of edge passivation is 40%. This review presents an overview of p-type TOPCon technologies, including the ultra-thin silicon oxide layer (SiO_x) and poly-silicon layer (poly-Si), as well as the advancement of the SiO_x and poly-Si layers. Subsequently, the limitations of improving efficiency are discussed in detail. Consequently, it is expected to provide a basis for the simplification of industrial mass production.

• 한국진공학회:학술대회논문집
• /
• 한국진공학회 2016년도 제50회 동계 정기학술대회 초록집
• /
• pp.375.1-375.1
• /
• 2016

Polymerase chain reaction (PCR) has revolutionized genetics and become one of the most popular techniques in modern biological and medical sciences. It can be used not only as an in vitro DNA amplification method but also used in many bioassay applications. The PCR can be used to exponentially produce a large number of DNA copies from a small quantity of DNA molecules in a few hours. However, as unwanted DNA fragments are also often manufactured, the amplification efficiency of PCR is decreased. To overcome this limitation, several nanomaterials have been employed to increase the specificity of the PCR reaction. Recently, graphene has attracted a great interest for its excellent electron transfer, thermal and biocompatibility. Especially, gold nanoparticle-coated graphene oxide (GO/AuNPs) led to enhance electron and thermal transfer rate and low-charge transfer resistance. Therefore, we report the development of a demonstration for the PCR efficiency using a large-scale production of the GO and combination of gold nanoparticles. Because a thermal conductivity is an important factor for improving the PCR efficiency in different DNA polymerases and different size samples. When PCR use GO/AuNPs, the result of transmission electron microscopy and real-time quantitative PCR (qPCR) showed an enhanced PCR efficiency. We have demonstrated that GO/AuNPs would be simply outperformed for enhancing the specificity and efficiency of DNA amplification procedure.

• 한국수소및신에너지학회논문집
• /
• 제20권5호
• /
• pp.416-423
• /
• 2009

High-temperature steam electrolysis (HTSE) using solid oxide cell is a challenging method for highly efficient large-scale hydrogen production as a reversible process of solid oxide fuel cell (SOFC). The overall efficiency of the HTSE hydrogen and synthesis gas production system was analyzed thermo-electrochemically. A thermo-electrochemical model for the hydrogen and synthesis gas production system with solid oxide electrolysis cell (SOEC) and very high temperature gas-cooled reactor (VHTR) was established. Sensitivity analyses with regard to the system were performed to investigate the quantitative effects of key parameters on the overall efficiency of the production system. The overall efficiency with SOEC and VHTR was expected to reach a maximum of 58% for the hydrogen production system and to 62% for synthesis gas production system by improving electrical efficiency, steam utilization rate, waste heat recovery rate, electrolysis efficiency, and thermal efficiency. Therefore, overall efficiency of the synthesis production system has higher efficiency than that of the hydrogen production system.

• Nuclear Engineering and Technology
• /
• 제41권1호
• /
• pp.107-112
• /
• 2009

Corrosion of nickel-base alloys (Hastelloy C-276, Inconel 625, and Inconel X-750) in $500^{\circ}C$, 25MPa supercritical water (with 10 wppb oxygen) was investigated to evaluate the suitability of these alloys for use in supercritical water reactors. Oxide scales formed on the samples were characterized by gravimetry, scanning electron microscopy/energy dispersive spectroscopy, X-ray diffraction, and X-ray photoelectron spectroscopy. The results indicate that, during the 1000h exposure, a dense spinel oxide layer, mainly consisting of a fine Cr-rich inner layer ($NiCr_{2}O_{4}$) underneath a coarse Fe-rich outer layer ($NiFe_{2}O_{4}$), developed on each alloy. Besides general corrosion, nodular corrosion occurred on alloy 625 possibly resulting from local attack of ${\gamma}$" clusters in the matrix. The mass gains for all alloys were small, while alloy X -750 exhibited the highest oxidation rate, probably due to the absence of Mo.

• 소성∙가공
• /
• 제13권1호
• /
• pp.72-77
• /
• 2004

An Fe-25Cr steel was oxidized in Ar atmosphere at 973K with and without applying external stress of 30∼35 MPa. A 0.1$\mu\textrm{m}$ thick $Cr_2O_3$ scales formed during pre-treatment in Ar atmosphere. Initiation of cracking on the oxide scales took place at grain boundaries during the end of second creep stage, in which cracks were found nearly perpendicular to the tensile directions. On the contrary, a scale developed in $N_2$-0.1%$SO_2$ displaced a poor adherence on the metal substrate. In this sample, a fast grown of scales was observed during creep deformation, and the strength of materials was much lower than in Ar. The creep strain rate of $1.5{\times}10^{-7}/s$ and $5.8{\times}10^{-7}/s$ was determined in Ar and in $N_2$-0.1%$SO_2$ under 30MPa, respectively.