• Electrical & Electronic Materials
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• 제9권5호
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• pp.439-444
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• 1996

0.15(B $a_{0.95}$ S $r_{0.05}$)O-0.15(S $m_{2(1-x}$/N $d_{2x}$) $O_{3}$-0.7Ti $O_{2}$(x=0-10[m/o]) ceramics were fabricated by mixed oxide method. Microwave dielectric properties were investigated with contents of N $d_{2}$ $O_{3}$. In the case of specimen with N $d_{2}$ $O_{3}$(6[m/o]), dielectric constant, quality factor and temperature coefficient of resonant frequency were 78.14, 2938(at 3[GHz]) and +14.19[ppm/.deg. C], respectively. By comparison its properties with undoped specimen, dielectric constant and quality factor were highly improved, but the temperature coefficient of resonant frequency was increased to positive value......

• Bulletin of the Korean Chemical Society
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• 제23권5호
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• pp.741-744
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• 2002

Single phase of multicomponent oxide ZrTiO4 film could be prepared through surface sol-gel route simply by coating the mixture of 100 mM zirconium butoxide and titanium butoxide on $Pt/Ti/SiO_2Si(100)$ substrate, following pyro lysis at $450^{\circ}C$, and annealing it at 770 $^{\circ}C.$ The dielectric constant of the film was reduced as the film thickness decreased due to of the interfacial effects caused by layer/electrode and a few voids inside the multilayer. However, the dielectric property was independent of applied dc bias sweeps voltage (-2 to +2 V).The dielectric constant of bulk film, 31.9, estimated using series-connected capacitor model was independent of film thickness and frequency in the measurement range, but theoretical interfacial thickness, ti, was dependent on the frequency. It reached a saturated ti value, $6.9{\AA}$, at high frequency by extraction of some capacitance component formed at low frequency range. The dielectric constant of bulk ZrTiO4 pellet-shaped material was 33.7 and very stable with frequency promising as good applicable devices.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 한국전기전자재료학회 2001년도 추계학술대회 논문집 Vol.14 No.1
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• pp.402-405
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• 2001

$(Ba_{0.6-x}Sr_{0.4}Ca_{x})TiO_{3}$ (x=0.10, 0.15, 0.20) ceramics were fabricated by the mixed-oxide method and their stuctural and dielectric properties were investigated with variation of composition ratio and an amount of $Al_{2}O_{3}$ (0.5, 1.0, 1.5. 2.0, 3.0 wt%) doping content. As a result of the X-ray diffraction BSCT specimens showed dense and homogeneous structure without presence of the second phase. The sintered density was decreased with increase an $Al_{2}O_{3}$ doping content. The Curie temperature and relative dielectric constant at room temperature were decreased with increasing an amount of $Al_{2}O_{3}$ doping content. The dielectric loss is minimum for BSCT doped with 1.5wt% $Al_{2}O_{3}$ content. The tunability was decreased with increasing an Ca content and is about 4.2% for BSCT(50/40/10) doped with 2.0wt% $Al_{2}O_{3}$ content.

• The Transactions of the Korean Institute of Electrical Engineers C
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• 제50권11호
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• pp.550-554
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• 2001

$(Ba_{0.6}Sr_{0.4}Ca_x)TiO_3 + yAl_2O_3$ wt% (x=0.10, 0.15, 0.20, y=0~3.0) ceramics were fabricated by the mixed-oxide method, and their structural and dielectric properties were investigated with variation of composition ratio and $Al_2O_3$ doping content. As results of the X-ray diffraction and microstructure analysis, all BSCT specimens showed dense and homogeneous structure without presence of the second phase. The sintered density was decreased with an increase of $Al_2O_3$ doping content. The Curie temperature and relative dielectric constant at room temperature were decreased with increasing $Al_2O_3$doping content. The dielectric loss is minimum at BSCT doped with 1.5wt% $Al_2O_3$content. The tunability was decreased with increasing an Ca content and the BSCT(50/40/10) specimen doped with 2.0wt% $Al_2O_3$content showed the maximum value of 4.2%.

• Electrical & Electronic Materials
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• 제10권10호
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• pp.1041-1047
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• 1997

In this paper the dielectric properties of (0.8-x)Pb(Mb$_{1}$3//Nb/2/3)O$_3$/BaTiO$_3$-CaZrO$_3$(x=0.1, 0.15, 0.2, 0.25) ceramics were investigated. Specimens were prepared by the conventional mixed oxide method and sintering temperature and time were 1000~115$0^{\circ}C$ 2hr, respectively. The structural and dielectric properties with variation of sintering temperature and composition were investigated. All the specimens sintered at 115$0^{\circ}C$ for 2hr showed the highest value of 1043. With increasing the contents of CZ and frequency dielectric constant was decreased and which was decreased with increasing temperature from 3$0^{\circ}C$ to 15$0^{\circ}C$.

• Electrical & Electronic Materials
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• 제8권2호
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• pp.224-228
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• 1995

0.15(B $a_{0.95}$ S $r_{0.05}$)O-0.15S $m_{2}$ $O_{3}$-0.7Ti $O_{2}$ ceramics were fabricated by the mixed-oxide method. Microwave dielectric properties were investigated with sintering conditions. Increasing the sintering temperature from 1300 to 1375[.deg. C], the sintered density was increased from 5.44 to 5.63[g/c $m^{3$]. Increasing the sintering temperature, dielectric constant and quality factor were increased and temperature coefficient of resonant frequency was independent of sintering temperature. In the specimen sintered at 1375[.deg. C], dielectric constant, quality factor and temperature coefficient of resonant frequency were 80.79, 2784(at 3[GHz]), +11.07[ppm/.deg. C], respectively..

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 한국전기전자재료학회 2001년도 추계학술대회 논문집
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• pp.402-405
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• 2001

(Ba$\_$0.6-x/Sr$\_$0.4/Ca$\_$x/)TiO$_3$(x=0.10, 0.15, 0.20) ceramics were fabricated by the mixed-oxide method and their structural and dielectric properties were investigated with variation of composition ratio and an amount of Al$_2$O$_3$(0.5, 1.0, 1.5, 2.0, 3.0 wt%) doping content. As a result of the X-ray diffraction BSCT specimens showed dense and homogeneous structure without presence of the second phase. The sintered density was decreased with increase an Al$_2$O$_3$ doping content. The Curie temperature and relative dielectric constant at room temperature were decreased with increasing an amount of Al$_2$O$_3$ doping content. The dielectric loss is minimum for BSCT doped with 1.5wt% Al$_2$O$_3$ content. The tunability was decreased with increasing an Ca content and is about 4.2% for BSCT(50/40/10) doped with 2.0wt% Al$_2$O$_3$ content.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 한국전기전자재료학회 2003년도 추계학술대회 논문집 Vol.16
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• pp.296-299
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• 2003

In this paper, $0.10Pb(Sb_{1/2}Sn_{1/2})O_3-0.25PbTiO_3-0.65PbZrO_3$ ceramics were fabricated by the mixed-oxide method. The sintering temperature and time were $1230^{\circ}C$ and 2[hr], respectively. The structural, dielectric and piezoelectric properties with addition of NiO were studied. The crystal structure of a specimen was rhombohedral. As a result of SEM, the average grain size were decreased with increasing the contents of NiO. But the grains of the specimens doped with 0.4wt% NiO were increased, due to deposits of excess NiO at grain boundaries in the liquid phase. Relative dielectric constant and dielectric loss of the specimen doped with 0.1wt% NiO were 701 and 0.026, respectively.

• Journal of the Korean Institute of Telematics and Electronics A
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• 제32A권11호
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• pp.44-51
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• 1995

Homogeneous, compositionally graded, and superlattice-like silicon oxynitride(SiON) dielectric layers, with the refractive index varying from 1.46 to 2.05 as a function of film thickness, were grown by computer-controlled plasma-enhanced chemical vapor deposition (PECVD) using silane, nitrogen, and nitrous oxide reactant gases. An antireflection(AR) coating and thin-film electroluminescent(TFEL) devices with multiple dielectrics were designed and fabricated using real time control of reactant gases of the PECVD system.

• Proceedings of the KWS Conference
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• 대한용접접합학회 2002년도 Proceedings of the International Welding/Joining Conference-Korea
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• pp.53-58
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• 2002

Electrical insulation and mechanical properties of the plasma sprayed oxide ceramic coatings were studied before and after the sealing treatment of the ceramic coatings. Plasma sprayed A1$_2$O$_3$-TiO$_2$ coating as the reference coating was sealed using three commercial sealants based on polymer. Penetration depth of the sealants to the ceramic coating was evaluated directly from the optical microscope using a fluorescent dye. It is estimated that the penetration depth of the sealants to the ceramic coating is from 0.2 to 0.5 mm depending on the sealants used. The preliminary test results with a DC puncture tester imply that the dielectric breakdown voltage mechanism of plasma sprayed ceramic coatings has been determined to be a corona mechanism. Dielectric breakdown voltage of the as-sprayed and as-ground samples have shown a linear trend with regard to the thickness showing an average dielectric strength of 20 kV/mm for the thickness scale studied. It is also shown that grinding the coating before sealing and adding fluorescent dye do not agent the penetration depth of sealants. All of the microhardness, two-body abrasive wear resistance, bond strength, and surface roughness of the ceramic coating after the sealing treatment are improved. The extent of improvement is different from the sealants used. However, three-point bending stress of the ceramic coating after the sealing treatment is decreased. This is attributed to the reduced micro-crack toughening effect since the cracks propagate easily through the lamellar of the coating without crack deflection and/or branching after the sealing treatment.