• Journal of the Korean Ceramic Society
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• v.29 no.4
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• pp.259-264
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• 1992

The crystal structures and the bonding characteristics in $(Ba_xPb_{1-x})TiO_3$ have been investigated by X-ray diffraction analysis and infrared spectrophotometry. As $Ba^{2+}$ ion in $BaTiO_3$ were substituted by $Pb^{2+}$ ion, the structures were changed to orthorhombic from tetragonal, and also the covalent character in Ti-O bond increased, and then the dielectric constants decreased gradually. In the mixed oxide containing $Pb^{2+}$ ion more than 50%, the change-transfer energy of titanium ion increased.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.46 no.12
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• pp.18-23
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• 2009

The effect of hydrogen-nitrogen annealing on the interface trap properties of Metal-Oxide-Nitride-Oxide-Silicon (MONOS) capacitors is investigated by analyzing the capacitors' gate leakage current and the interface trap density between the Si and $SiO_2$ layer. MONOS samples annealed at $850^{\circ}C$ for 30 s by rapid thermal annealing (RTA) are treated by additional annealing in a furnace, using annealing eases $N_2$ and 2% hydrogen and 98% nitrogen gas mixture $(N_2-H_2)$ at $450^{\circ}C$ for 30 mins. Among the three samples as-deposited, annealed in $N_2$ and $N_2-H_2$, MONOS sample annealed in an $N_2-H_2$ environment is found to have the lowest increase of interface-trap density from the capacitance-voltage experiments. The leakage current of sample annealed in $N_2-H_2$ is also lower than that of sample annealed in $N_2$.

• Journal of Korean Society of Occupational and Environmental Hygiene
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• v.24 no.3
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• pp.263-271
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• 2014

Objectives: Along with the several cases of pulmonary disorders caused by exposure to indium that have been reported in Japan, China, and the United States, cases of Korean workers involved in processes that require handling of indium compounds with potential risk of exposure to indium compounds have also been reported. We performed biological monitoring for workers in various target manufacturing processes of indium, indium oxide, and indium tin oxide(ITO)/indium zinc oxide(IZO) in domestic factories. Materials: As biological exposure indices, we measured serum concentrations of indium using inductively coupled plasma mass spectrometry, and Krebs von den Lungen 6(KL-6) and surfactant protein D(SP-D) using enzyme-linked immunosorbent assays. We classified the ITO/IZO target manufacturing process into powdering, mixing, molding, sintering, polishing, bonding, and finishing. Results: The powdering process workers showed the highest serum indium level. The mixing and polishing process workers also showed high serum indium levels. In the powdering process, the mean indium serum concentration in the workers exceeded $3{\mu}g/L$, the reference value in Japan. Of the powdering, mixing, and polishing process workers, 83.3%, 50.0%, and 24.5%, respectively, had values exceeding the reference value in Japan. We suppose that the reason of the higher prevalence of high indium concentrations in powder processing workers was that most of the particles in the powdering process were respirable dust smaller than $10{\mu}m$. The mean KL-6 and SP-D concentrations were high in the powdering, mixing, and polishing process workers. Therefore, the workers in these processes who were at greater risk of exposure to indium powder were those who had higher serum levels of indium, as well as KL-6 and SP-D. We observed significant differences in serum indium, KL-6, and SP-D levels between the process groups. Conclusions: Five among the seven reported cases of "indium lung" in Japan involved polishing process workers. Polishing process workers in Korea also had high serum levels of indium, KL-6, and SP-D. The outcomes of this study can be used as essential bases for establishing biological monitoring measures for workers handling indium compounds, and for developing health-care guidelines and special medical surveillance in Korea.

• Journal of the Microelectronics and Packaging Society
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• v.19 no.3
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• pp.37-41
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• 2012

The wafer level stacking with Cu-to-Cu bonding becomes an important technology for high density DRAM stacking, high performance logic stacking, or heterogeneous chip stacking. Cu CMP becomes one of key processes to be developed for optimized Cu bonding process. For the ultra low-k dielectrics used in the advanced logic applications, Ti barrier has been preferred due to its good compatibility with porous ultra low-K dielectrics. But since Ti is electrochemically reactive to Cu CMP slurries, it leads to a new challenge to Cu CMP. In this study Ti barrier/Cu interconnection structure has been investigated for the wafer level 3D integration. Cu CMP wafers have been fabricated by a damascene process and two types of slurry were compared. The slurry selectivity to $SiO_2$ and Ti and removal rate were measured. The effect of metal line width and metal density were evaluated.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.18 no.8
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• pp.873-879
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• 2007

We have implemented a highly efficient 2.14-GHz class-F amplifier using Freescale 4-W peak envelope power(PEP) RF Si lateral diffusion metal-oxide-semiconductor field effect transistor(LDMOSFET). Because the control of the all harmonic contents is very difficult, we have managed only the $2^{nd}\;and\;3^{rd}$ harmonics to obtain the high efficiency with simple harmonic control circuit. In order to design the harmonic control circuit accurately, we extracted the bonding wire inductance and drain-source capacitance which are dominant parasitic and package effect components of the device. And then, we have fabricated the class-F amplifier. The measured drain and power-added efficiency are 65.1 % and 60,3 %, respectively.

• Carbon letters
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• v.4 no.1
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• pp.1-9
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• 2003

Recently, the control of pore-characteristics of nano-porous materials has been studied extensively because of their unique applications, which includes size-selective separation, gas adsorption/storage, heterogeneous catalysis, etc. The most widely adopted techniques for controlling pore characteristics include the utilization of pillar effect by metal oxide and of templates such as zeolites. More recently, coordination polymers constructed by transition metal ions and bridging organic ligands have afforded new types of nano-porous materials, porous metal-organic framework(porous MOF), with high degree and uniformity of porosity. The pore characteristics of these porous MOFs can be designed by controlling the coordination number and geometry of selected metal, e.g transition metal and rare-earth metal, and the size, rigidity, and coordination site of ligand. The synthesis of porous MOF by the assembly of metal ions with di-, tri-, and poly-topic N-bound organic linkers such as 4,4'-bipyridine(BPY) or multidentate linkers such as carboxylates, which allow for the formation of more rigid frameworks due to their ability to aggregate metal ions into M-O-C cluster, have been reported. Other porous MOF from co-ligand system or the ligand with both C-O and C-N type linkage can afford to control the shape and size of pores. Furthermore, for the rigidity and thermal stability of porous MOF, ring-type ligand such as porphyrin derivatives and ligands with ability of secondary bonding such as hydrogen and ionic bonding have been studied.

• Restorative Dentistry and Endodontics
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• v.42 no.2
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• pp.125-133
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• 2017

Objectives: This study compared the effect of hexamethyldisiloxane (HMDSO) and ammonia ($NH_3$) plasmas on the bond strength of resin cement to fiber posts with conventional treatments. Materials and Methods: Sixty-five fiber posts were divided into 5 groups: Control (no surface treatment); $H_2O_2$ (24% hydrogen peroxide for 1 min); Blasting (blasting with aluminum oxide for 30 sec); $NH_3$ ($NH_3$ plasma treatment for 3 min); HMDSO (HMDSO plasma treatment for 15 min). After the treatments, the Ambar adhesive (FGM Dental Products) was applied to the post surface (n = 10). The fiber post was inserted into a silicon matrix that was filled with the conventional resin cement Allcem Core (FGM). Afterwards, the post/cement specimens were cut into discs and subjected to a push-out bond strength (POBS) test. Additionally, 3 posts in each group were evaluated using scanning electron microscopy. The POBS data were analyzed by one-way analysis of variance and the Tukey's honest significant difference post hoc test (${\alpha}=0.05$). Results: The Blasting and $NH_3$ groups showed the highest POBS values. The HMDSO group showed intermediate POBS values, whereas the Control and $H_2O_2$ groups showed the lowest POBS values. Conclusion: Blasting and $NH_3$ plasma treatments were associated with stronger bonding of the conventional resin cement Allcem to fiber posts, in a procedure in which the Ambar adhesive was used.

• The korean journal of orthodontics
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• v.40 no.1
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• pp.27-33
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• 2010

Objective: The need to bond orthodontic brackets onto various alloys has increased because of the increasing demand for adult orthodontic treatment. This study tried to evaluate the shear bond strength between gold alloy and metal bracket using light emitting diode (LED) light curing after metal primer and silicoating surface conditioning. Methods: Half of the type III gold alloy plates were treated with sandblasting with aluminum oxide and metal primer containing 4-META. the other half were treated with silica and silane. Metal brackets were bonded with Transbond XT light curing adhesive on these plates and shear bond strength were evaluated 1 hour, 6 hours, and 24 hours later. The differences of shear bond strength between groups were evaluated with two-way ANOVA. Results: The results showed higher bond strength in the silicoating group and a tendency of bond strength increase over time. Conclusions: When using LED curing lights for metal bracket bonding to alloy surfaces, long curing time and silicoating can produce a reliable bonding strength.

• Korean Journal of Materials Research
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• v.10 no.3
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• pp.212-217
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• 2000

Dielectric thin films for TFT(thin film transistor)s, such as silicon nitride$(Si_3N_4)$ and silicon oxide$(SiO_2)$, are usually deposited at $200~300^{\circ}C$. In this study, authors have tried to form dielectric films not by deposition but by oxidation with ECR(Electron Cyclotron Resonance) oxygen plasma, to improve the interface properties was not intensionally heated during oxidation. THe oxidation was performed consecutively without breaking vacuum after the deposition of a-Si: H films on the substrate to prevent the introduction of impurities. In this study, especially pulse mode of microwave power has been firstly tried during FCR oxygen plasma formation. Compared with the case of the continuous wave mode, the oxidation with the pulsed ECR results in higher quality silicon oxide$SiO_X$ films in terms of stoichiometry of bonding, dielectric constants and surface roughness. Especially the surface roughness of the pulsed ECR oxide films dramatically decreased to one-third of that of the continuous wave mode cases.

• Journal of the Korean Chemical Society
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• v.31 no.2
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• pp.197-202
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• 1987

Sigmatropic rearrangement of cis and trans-2-methyl-N-phenyl-1,3-oxathiolane-2-acetamide (b) and (c) gave unisolable sulfenic acids (d) and (f), respectively. These sulfenic acids were confirmed by deuterium exchange reactions involving 2-methylene and 2-methyl groups. The reactions also showed that no isomerization between the cis and trans sulfoxides (b) and (c) occurred under neutral conditions. However, the isomerization took place in the presence of acid catalyst. Stereospecific recyclization of sulfenic acids to the sulfoxides is attributable to possible hydrogen bonding between sulfenyl oxygen and NH proton or it arises from the geometrical requirements of the reacting bond and atoms in the reverse sigmatropic rearrangement. In the oxidation of 1, 3-oxathiolane, cis sulfoxide (b) could be obtained selectively in high yield by using $H_2O_2$-benzene seleninic acid.