• Journal of Electrochemical Science and Technology
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• v.12 no.1
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• pp.112-125
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• 2021

The new emerging "High entropy materials" attract the attention of the scientific society because of their simpler structure and spectacular applications in many fields. A novel nanocrystalline high entropy (Be,Mg,Ca,Sr,Zn,Ni)3O4 oxide has been successfully synthesized through mechanochemical treatment followed by sintering and air quenching. The present research work focuses on the possibility of single-phase formation in the aforementioned high entropy oxide despite the great difference in the atomic sizes of reactant alkaline earth and 3d transition metal oxides. Structural properties of (Be,Mg,Ca,Sr,Zn,Ni)3O4 high entropy oxide were explored by confirmation of its single-phase Fd-3m spinel structure by x-ray diffraction (XRD). Further, nanocrystalline nature and morphology were analyzed by scanning electron microscopy (SEM). Among thermal properties, thermogravimetric analysis (TGA) revealed that the (Be,Mg,Ca,Sr,Zn,Ni)3O4 high entropy oxide is thermally stable up to a temperature of 1200℃. Whereas phase evolution in (Be,Mg,Ca,Sr,Zn,Ni)3O4 high entropy oxide before and after sintering was analyzed through differential scanning calorimetry (DSC). Electrochemical studies of (Be,Mg,Ca,Sr,Zn,Ni)3O4 high entropy oxide consists of a comparison of thermodynamic and kinetic parameters of water and hydrazine hydrate oxidation. Values of activation energy for water oxidation (9.31 kJ mol-1) and hydrazine hydrate oxidation (13.93 kJ mol-1) reveal that (Be,Mg,Ca,Sr,Zn,Ni)3O4 high entropy oxide is catalytically more active towards water oxidation as compared to that of hydrazine hydrate oxidation. Electrochemical impedance spectroscopy is also performed to get insight into the kinetics of both types of reactions.

• Proceedings of the Korean Vacuum Society Conference
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• 2016.02a
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• pp.318.1-318.1
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• 2016

Hafnium Oxide (HfOx) has been attracted as a promising gate dielectric for replacing SiO2 in gate stack applications. In this paper, Metal-Oxide-Semiconductor (MOS) capacitor with solution processed HfO2 high-k material as a dielectric were fabricated. The solvent using $HfOCl2{\cdot}8H2O$ dissolve in 2-Methoxy ethanol was prepared at 0.3M. The HfOx layers were deposited on p-type silicon substrate by spin-coating at $250^{\circ}C$ for 5 minutes on a hot plate and repeated the same cycle for 5 times, followed by annealing process at 350, 450 and $550^{\circ}C$ for 2 hours. When the annealing temperature was increased from 350 to $550^{\circ}C$, capacitance value was increased from 337 to 367 pF. That was resulted from the higher temperature of HfOx which have more crystallization phase, therefore dielectric constant (k) was increased from 11 to 12. It leads to the formation of dense HfOx film and improve the ability of the insulator layer. We confirm that HfOx layer have a good performance for dielectric layer in MOS capacitors.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.07a
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• pp.832-835
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• 2001

We report the structural and electrical properties of hafnium oxide (HfO$_2$) films with tungsten silicide (WSi$_2$) metal gate. In this study, HfO$_2$thin films were fabricated by oxidation of sputtered Hf metal films on Si, and WSi$_2$was deposited directly on HfO$_2$by LPCVD. The hysteresis windows in C-V curves of the WSi$_2$HfO$_2$/Si MOS capacitors were negligible (<20 mV), and had no dependence on frequency from 10 kHz to 1 MHz and bias ramp rate from 10 mV to 1 V. In addition, leakage current was very low in the range of 10$^{-9}$ ~10$^{-10}$ A to ~ 1 V, which was due to the formation of interfacial hafnium silicate layer between HfO$_2$and Si. After PMA (post metallization annealing) of the WSi$_2$/HfO$_2$/Si MOS capacitors at 500 $^{\circ}C$ EOT (equivalent oxide thickness) was reduced from 26 to 22 $\AA$ and the leakage current was reduced by approximately one order as compared to that measured before annealing. These results indicate that the effect of fluorine diffusion is negligible and annealing minimizes the etching damage.

• Journal of the Korean Vacuum Society
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• v.9 no.1
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• pp.42-47
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• 2000

The amorphous vanadium oxide thin films for thin-film rechargeable lithium batteries were fabricated by r.f. reactive sputtering at room temperature. As the experimental parameter, oxygen partial pressure was varied during sputtering. At high oxygen partial pressures(>30%), the as-deposited films, constant current charge/discharge characteristics were carried out in 1M $LiPF_6$, EC:DMC+1:1 liquid electrolyte using lithium metal as anode. The specific capacity of amorphous $V_2O_5$ after 200cycles of operation at room temperature was higher compared to crystalline $V_2O_5$. The amorphous vanadium oxide thin film and crystalline film showed about 60$\mu$Ah/$\textrm{cm}^2\mu\textrm{m}$ and about 38$\mu$Ah/$\textrm{cm}^2\mu\textrm{m}$, respectively. These results suggest that the battery capacity of the thin film vanadium oxide cathode strongly depends on the crystallinity.

• Journal of Digital Convergence
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• v.12 no.7
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• pp.291-296
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• 2014

Inserting a $SiO_2$ layer underneath the p-pad electrode as the current blocking layer (CBL) structure and extending p-metal finger patterns, the GaN LEDs using an indium-tin-oxide (ITO) layer show the improved light output intensity, resulting from better current spreading and reduced light loss on the surface of p-pad metal. The LEDs with an oxide layer of $100{\mu}m$-pad-width and $6{\mu}m$-finger-width have better light output intensities than those with an oxide layer of $105{\mu}m$-pad-width and $12{\mu}m$-finger-width. Using the ATLAS device simulator from Silvaco Corporation, the current density distributions on the active layer in CBL LEDs have been investigated.

• Particle and aerosol research
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• v.6 no.1
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• pp.29-35
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• 2010

Transition metals such as V, Fe, and Ni were used to synthesize doped zinc oxide nanoparticles from mixed liquid precursors by using the flame spray pyrolysis (FSP). The effects of dopants on the powder properties such as morphology, specific surface area, crystal structure, and light adsorption were analyzed by TEM, BET, XRD, and UV-Vis diffuse reflection spectrum (DRS), respectively. The results showed that hexagonal wurtzite structured ZnO:M (M = V, Fe, Ni) nanoparticles were successfully synthesized by the FSP. The transition metal-doping resulted in the decrease in its particle size and crystallite size. The UV-vis absorption spectra of ZnO:M nanoparticles were also red-shifted. ZnO:V showed the highest MB degradation of 99.4% under the UV irradiation after 3 hrs.

• Journal of the Korean institute of surface engineering
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• v.51 no.4
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• pp.237-242
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• 2018

We report on the fabrication and photoelectrochemical (PEC) properties of a ZnO nanorod array structure as an efficient photoelectrode for hydrogen production from sunlight-driven water splitting. Vertically aligned ZnO nanorods were grown on an indium-tin-oxide-coated glass substrate via seed-mediated hydrothermal synthesis method with the use of a ZnO nanoparticle seed layer, which was formed by thermally oxidizing a sputtered Zn metal thin film. The structural and morphological properties of the synthesized ZnO nanorods were examined using X-ray diffraction and scanning electron microscopy, as well as Raman scattering. The PEC properties of the fabricated ZnO nanorod photoelectrode were evaluated by photocurrent conversion efficiency measurements under white light illumination. From the observed PEC current density versus voltage (J-V) behavior, the vertically aligned ZnO nanorod photoelectrode was found to exhibit a negligible dark current and high photocurrent density, e.g., $0.65mA/cm^2$ at 0.8 V vs Ag/AgCl in a 1 mM $Na_2SO_4$ electrolyte. In particular, a significant PEC performance was observed even at an applied bias of 0 V vs Ag/AgCl, which made the device self-powered.

• Journal of the Korean Ceramic Society
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• v.41 no.3
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• pp.183-189
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• 2004

Cuprous oxide (Cu$_2$O) thin films are cathodically deposited on Indium Tin Oxide (ITO) substrate. The as-deposited films were heat-treated at 30$0^{\circ}C$ to obtain Cu$_2$O. After the heat treatment, the film was changed from Cu metal into Cu$_2$O phase. The phase, morphology and photocurrent density of the films were dependent on the preparation conditions of deposition time, applied voltage, and the duration of heat treatment. The Cu$_2$O films were characterized by X-Ray Diffractometer (XRD) and Scanning Electron Microscope (SEM). The apparent grain size of the films formed by the normal method was larger than those grown by the pulse method. The CU$_2$O film what was deposited at -0.7 V for 300 sec and then, calcined at 30$0^{\circ}C$ for 1 h showed the predominant photocurrent density of 1048 $\mu$A/$\textrm{cm}^2$. And the stability of Cu$_2$O electrodes were improved with chemically deposited TiO$_2$ thin films on Cu$_2$O.

• The Journal of the Korea institute of electronic communication sciences
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• v.9 no.7
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• pp.747-752
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• 2014

This paper relates 10% shrink from $0.13{\mu}m$ design for logic devices as well as input and output (I/O) circuits, different from the previous shrink methodologies which shrink only core device. Thin gate oxide was changed to decoupled plasma nitridation(DPN) oxide as a thin gate oxide (1.2V) to reduce the flicker noise, resulting in three to five times lower flicker noise than pre-shrink process. Unavoidable issue by shrink is capacitor for this normally metal insulator metal (MIM). To solve this issue, 20% higher unit MIM capacitor ($1.2fF/{\mu}m^2$) was developed and its performance were evaluated.

• Electrical & Electronic Materials
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• v.9 no.10
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• pp.1047-1052
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• 1996

In this study, the thermal and optical proper-ties of multicomponent oxide glass fiber for IR sensor by adding heavy metal oxide Ga$_{2}$O$_{3}$ were investigated. The fiber samples were made by rod-in tube method. The optical loss of fiber was measured in 0.3-1.8/M wavelength region. As Ga$_{2}$O$_{3}$ increased up to 12wt%, the transition and softening temperature of bulk glass were increased from 495.deg. C to 564.deg. C and from 548.deg. C to 612.deg. C respectively. Whereas the thermal expansion coefficient was decreased from 102 to 88.2*10$^{-7}$ /.deg. C. The refractive index was increased from 1.621 to 1.662, and IR cut-off wavelength was enlarged from 4.64.mu.m to 5.22.mu.m. The optical loss of fiber was decreased and more remarkably decreased in 1.146.mu.m-1.8.mu.m wavelength region.