• 전기의세계
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• v.31 no.6
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• pp.445-449
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• 1982

This Paper describes the influence of additive concentrations and sintering temperature on the surge protection performance in ZnO ceramic varistors. It is found from the experiments that the metal-oxide semiconductors based oi ZnO with an additive incorporation of 0.50% molx(Bi$\_$2/O$\_$3/+MnO+CoO+Cr$\_$2/O$\_$3/+2Sb$\_$2/O$\_$3/) and sintered at 1250.deg. C present excellent V-I characteristics in view of transient surge suppression. Gapless arrester element with aluminum electrodes shows also good reliability against impulse shock and marks a low voltage clamping ratio(V$\_$1KA/V$\_$1mA/<2.0) compared with the conventional SiC varistors.

• Proceedings of the KIEE Conference
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• 2009.07a
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• pp.1270_1271
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• 2009

In this research, gallium-incorporated zinc oxide (ZnO:Ga) thin films have been used as a coating material for enhancing the field-emission property of CNT-emitters. Multi-walled CNTs were directly grown on conical-type ($250{\mu}m$ in diameter) metal-tip substrates at $700^{\circ}C$ by inductively coupled plasma-chemical vapor deposition (ICP-CVD). The pulsed laser deposition (PLD) technique was used to produce 5wt% gallium-doped ZnO (5GZO) films with very low stress. The structural properties of ZnO and 5GZO coated CNTs were characterized by Raman spectroscopy. Field emission scanning electron microscopy (FESEM) and high-resolution transmission electron microscopy (HRTEM) were also used to monitor the variation in the morphology and microstructure of CNTs before and after 5GZO-coating. The measurement of the field emission characteristics showed that the emitter that coated the 5GZO (10nm) on CNTs exhibited the best performance: a maximum emission current of $325{\mu}A$, a threshold field of 2.2 V/${\mu}m$.

• 한국신재생에너지학회:학술대회논문집
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• 2010.11a
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• pp.80.1-80.1
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• 2010

A strontium titanate ($SrTiO_3$)-based material with a perovskite structure is considered to be one of the promising alternatives to $LaCrO_3$-based materials since $SrTiO_3$ perovskite shows a high chemical stability under both oxidizing and reducing atmospheres at high temperatures. $SrTiO_3$ materials exhibit an n-type semiconducting behavior when it is donor-doped and/or exposed to a reducing atmosphere. In this work, $Sr_{1-x}La_xTi_{1-y}M_yO_3$ materials doped with $La^{3+}$ in A-sites and aliovalent transition metal ions ($M^{n+}$) in B-sites were synthesized by the modified Pechini method. The X-ray diffraction analysis indicated that the materials synthesized by the Pechini process exhibited a single curbic perovskite-type structure without any impurity phases, and are tolerant, to some extent, to cation doping. The sintering behaviors of $Sr_{1-x}La_xTi_{1-y}M_yO_3$ in $H_2/N_2$ and air were characterized by dilatometry and microstructural observations. The electrical conduction mechanism and the dopant effect are discussed based on the defect structures and the electrical conductivities measured at various oxygen partial pressures and temperatures.

• Korean Journal of Materials Research
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• v.18 no.3
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• pp.123-127
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• 2008

The production of tin oxide ($SnO_2$) microrods on iridium (Ir)-coated substrates was achieved through the thermal evaporation of Sn powders in which a sufficiently high $O_2$ partial pressure was employed. Scanning electron microscopy revealed that the product consisted of microrods with diameters that ranged from 0.9 to $40\;{\mu}m$. X-ray diffraction, high-resolution transmission electron microscopy, and selected area electron diffraction indicated that the microrods were $SnO_2$ with a rutile structure. As the microrod tips were free of metal particles, it was determined that the growth of $SnO_2$ microrods via the present route was dominated by a vapor-solid mechanism. The thickening of rod-like structures was related to the utilization of sufficiently high $O_2$ partial pressure during the synthesis process, whereas low $O_2$ partial pressure facilitated the production of thin rods.

• Transactions of the Korean hydrogen and new energy society
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• v.14 no.3
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• pp.268-275
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• 2003

The water-splitting process by the metal oxides using solar heat is one of the hydrogen production method. The hydrogen production process using the metal oxides (NiFe2O4/NiAl2O4,CoFe2O4/CoAl2O4, CoMnNiFerrite, CoMnSnFerrite, CoMnZnFerrite, CoSnZnFerrite) was carried out by two steps. The first step was carried out by the CH4-reduction to increase activation of metal oxides at operation temperature. And then, it was carried out the water-splitting reaction using the water at operation temperature for the second step. Hydrogen was produced in this step. The production rates of H2 were 110, 160, 72, 29, 17, $21m{\ell}/hr{\cdot}g-_{Metal\;Oxide}$ for NiFe2O4/NiAl2O4, CoFe2O4/CoAl2O4, CoMnNiFerrite, CoMnSnFerrite, CoMnZnFerrite, CoSnZnFerrite respectively in the second step. CoFe2O4/CoAl2O4 had higher H2 production rate than the other metal oxides.

• Journal of IKEEE
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• v.23 no.1
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• pp.193-199
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• 2019

In this study, we have proposed a floating metal guard ring structure based on TCAD simulation in order to enhance the breakdown voltage characteristics of gallium oxide ($Ga_2O_3$) vertical high voltage switching Schottky barrier diode. Unlike conventional guard ring structures, the floating metal guard rings do not require an ion implantation process. The locally enhanced high electric field at the anode corner was successfully suppressed by the metal guard rings, resulting in breakdown voltage enhancement. The number of guard rings and their width and spacing were varied for structural optimization during which the current-voltage characteristics and internal electric field and potential distributions were carefully investigated. For an n-type drift layer with a doping concentration of $5{\times}10^{16}cm^{-3}$ and a thickness of $5{\mu}m$, the optimum guard ring structure had 5 guard rings with an individual ring width of $1.5{\mu}m$ and a spacing of $0.2{\mu}m$ between rings. The breakdown voltage was increased from 940 V to 2000 V without degradation of on-resistance by employing the optimum guard ring structure. The proposed floating metal guard ring structure can improve the device performance without requiring an additional fabrication step.

• Proceedings of the Korean Powder Metallurgy Institute Conference
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• 2006.09b
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• pp.1241-1242
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• 2006

Electromagnetic properties of $CeO_2$ doped and undoped YBaCuO superconductors were evaluated to investigate the effect of pinning center on the magnetization and magnetic shielding. The variation $\DeltaM$ with doping was maximum for 3% doping and decrease with further doping. The magnetic shielding was evaluated by measuring the induced voltage in secondary coil and the voltage initially set to 0.5V, decreased to 0.17V and 0.28V respectively for the undoped and 3% $CeO_2$ doped sample. The much less change in the induced voltage for the 3% doped sample is attributed to the increased flux shielding by shielding vortex current. The $CeO_2$ was converted to fine $BaCeO_3$ particles which were trapped in YBaCuO superconductor during the reaction sintering. The trapped fine particles, $BaCeO_3$ may be acted as a flux pinning center.

• Transactions of Materials Processing
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• v.13 no.1
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• pp.72-77
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• 2004

An Fe-25Cr steel was oxidized in Ar atmosphere at 973K with and without applying external stress of 30∼35 MPa. A 0.1$\mu\textrm{m}$ thick $Cr_2O_3$ scales formed during pre-treatment in Ar atmosphere. Initiation of cracking on the oxide scales took place at grain boundaries during the end of second creep stage, in which cracks were found nearly perpendicular to the tensile directions. On the contrary, a scale developed in $N_2$-0.1%$SO_2$ displaced a poor adherence on the metal substrate. In this sample, a fast grown of scales was observed during creep deformation, and the strength of materials was much lower than in Ar. The creep strain rate of $1.5{\times}10^{-7}/s$ and $5.8{\times}10^{-7}/s$ was determined in Ar and in $N_2$-0.1%$SO_2$ under 30MPa, respectively.

• Applied Chemistry for Engineering
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• v.31 no.1
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• pp.97-102
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• 2020

Recently, various degradation mechanisms of lithium secondary battery cathode materials have been revealed. As a result, many studies on overcoming the limitation of cathode materials and realizing new electrochemical properties by controlling the degradation mechanism have been reported. Li-rich layered oxide is one of the most promising cathode materials due to its high reversible capacity. However, the utilization of Li-rich layered oxide has been restricted, because it undergoes a unique atomic structure change during the cycle, in turn resulting in unwanted electrochemical degradations. To understand an atomic structure deterioration mechanism and suggest a research direction of Li-rich layered oxide, we deeply evaluated the atomic structure of 0.4Li₂MnO₃_0.6LiNi_1/3Co_1/3Mn_1/3O₂ Li-rich layered oxide during electrochemical cycles, by using an atomic-resolution analysis tool. During a charge process, Li-rich materials undergo a cation migration of transition metal ions from transition metal slab to lithium slab due to the structural instability from lithium vacancies. As a result, the partial structural degradation leads to discharge voltage drop, which is the biggest drawback of Li-rich materials.

• Journal of the Korean Ceramic Society
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• v.45 no.12
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• pp.782-787
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• 2008

Ni-ceria cermets have been extensively investigated as candidates for the anode in intermediate-temperature solid oxide fuel cells. We have used the citric method to synthesize nanocomposite powders consisting of NiO (Ni metal content: $40{\sim}60%$ by volume) highly dispersed in $Ce_{0.9}Gd_{0.1}O_{1.95}$ (CGO). The microstructure characteristics and sintering behaviors of the nanocomposites were investigated. No impurity phases were observed and the shrinkage of these substrates matched well with that of a CGO electrolyte with a specific surface area of $11\;m^2/g$. Densification of the CGO electrolyte layer to $<5\;{\mu}m$ thickness was achieved by co-firing the laminated electrolyte with the porous NiO-CGO substrate at $1400^{\circ}C$ for 6 h.