• 제목/요약/키워드: Oxidation layer

검색결과 1,137건 처리시간 0.032초

Atomic Study of Oxidation of Si(001) surface by MD Simulation

  • Pamungkas, Mauludi Ariesto;Kim, Byung-Hyun;Joe, Min-Woong;Lee, Kwang-Ryeol
    • 한국진공학회:학술대회논문집
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    • 한국진공학회 2009년도 제38회 동계학술대회 초록집
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    • pp.360-360
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    • 2010
  • Very initial stage of oxidation process of Si (001) surface was investigated using large scale molecular dynamics simulation. Reactive force field potential was used for the simulation owing to its ability to handle charge variation associated with the oxidation reaction. To know the detail mechanism of both adsorption and desorption of water molecule (for simulating wet oxidation), oxygen molecule (for dry oxidation) and their atom constituents, interaction of one molecule with Si surface was carefully observed. The simulation is then continued with many water and oxygen molecules to understand the kinetics of oxide growth. The results show that possibilities of desorption and adsorption depend strongly on initial atomic configuration as well as temperature. We observed a tendency that H atoms come relatively into deeper surface or otherwise quickly desorbed away from the silicon surface. On the other hand, most oxygen atoms are bonded with first layer of silicon surface. We also noticed that charge transfer is only occur in nearest neighbor regime which has been pointed out by DFT calculation. Atomic structure of the interface between the oxide and Si substrate was characterized in atomic scale.

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Inconel 600에 있어서 Al抗散浸透 被覆層의 微細組織과 耐反復酸化性 (Microstructures and Cyclic Oxidation Resistance of Aluminide Coatings for Inconel 600)

  • 정린상;변창석
    • 한국표면공학회지
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    • 제20권2호
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    • pp.60-73
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    • 1987
  • For the purpose of improving the cyclic oxidation resistance of Ni-base superalloy, Inconel 600, aluminide coating methods are studied. The formation rate of aluminide coating layers is measured as a function of time and pack composition to find out the optimum coating condition. The evaluation of cyclic oxidation is established by the change in weight, the microphotography and EPMA of cross sectional area during $200^{\circ}C\;{\leftrightarrow}\;950^{\circ}C\;and\;200^{\circ}C\;{\leftrightarrow}\;1100^{\circ}C$, respectively. The thickness of coating layer and weight gains are parabolic behavior in propotion to time and Al contents. In pack of low aluminum contents, 2 wt%, however, weight gain is decreased when activator, $NH_4Cl$ is higher than 2 wt%. The cyclic oxidation resistance of the coating carried out at 1100$^{\circ}C$ are superior to those of the coating diffusion-treated after pack cementation at 800$^{\circ}C$. Aluminide oxide, which is formed in external scale, is barrier to the cyclic oxidation.

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IMPROVEMENT IN HIGH FREQUENCY MAGNETIC PROPERTIES OF THIN AMORPHOUS RIBBONS BY SURFACE OXIDATION

  • Ooae, K.;Fukunaga, H.;Kakehashi, H.;Ogasawara, H.
    • 한국자기학회지
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    • 제5권5호
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    • pp.597-600
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    • 1995
  • The effects of surface oxidation on magnetic properties were investigated at high frequencies (10k-100MHz) for $7-18\mu\textrm{m}$ thick $Co_{70}Fe_{5}Si_{15}B_{10}$ amorphous ribbons with controlled domain structure. Oxidation was accelerated by acid-treatment or anodic oxidation treatment, and the insulation layers were prepared on the surfaces of the ribbons. The acid-treatment was effective in improving permeability and magnetic loss. Although the anodic oxidation treatment was effective in both making oxide layer and thinning, the magnetic properties were not improved compared with the case of the acid-treatment.

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Effects of transition layer in SiO2/SiC by the plasma-assisted oxidation

  • 김대경;강유선;강항규;백민;오승훈;조상완;조만호
    • 한국진공학회:학술대회논문집
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    • 한국진공학회 2016년도 제50회 동계 정기학술대회 초록집
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    • pp.193.2-193.2
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    • 2016
  • We evaluate the change in defects in the oxidized SiO2 grown on 4H-SiC (0001) by plasma assisted oxidation, by comparing with that of conventional thermal oxide. In order to investigate the changes in the electronic structure and electrical characteristics of the interfacial reaction between the thin SiO2 and SiC, x-ray photoelectron spectroscopy (XPS), X-ray absorption spectroscopy (XAS), DFT calculation and electrical measurements were carried out. We observed that the direct plasma oxide grown at the room temperature and rapid processing time (300 s) has enhanced electrical characteristics (frequency dispersion, hysteresis and interface trap density) than conventional thermal oxide and suppressed interfacial defect state. The decrease in defect state in conduction band edge and stress-induced leakage current (SILC) clearly indicate that plasma oxidation process improves SiO2 quality due to the reduced transition layer and energetically most stable interfacial state between SiO2/SiC controlled by the interstitial C.

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Plasma Electrolytic Oxidation 방식으로 제조된 B Doped TiO2의 표면특성과 광촉매 특성 (Surface Characteristics and Photocatalytic Propertiy of B Doped TiO2 Layer Synthesized by Plasma Electrolytic Oxidation Process)

  • 이종호;이영기;김영직;오한준
    • 한국재료학회지
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    • 제31권10호
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    • pp.552-561
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    • 2021
  • For the purpose of manufacturing a high efficiency TiO2 photocatalyst, B-doped TiO2 photocatalysts are synthesized using a plasma electrolytic oxidation method in 0.5 M H2SO4 electrolyte with different concentrations of H3BO3 as additive. For the B doped TiO2 layer fabricated from sulfuric electrolyte having a higher concentration of H3BO3 additive, the main XRD peaks of (101) and (200) anatase phase shift gradually toward the lower angle direction, indicating volume expansion of the TiO2 anatase lattice by incorporation of boron, when compared with TiO2 layers formed in sulfuric acid with lower concentration of additive. Moreover, XPS results indicate that the center of the binding energy peak of B1s increases from 191.45 eV to 191.98 eV, which suggests that most of boron atoms are doped interstitially in the TiO2 layer rather than substitutionally. The B doped TiO2 catalyst fabricated in sulfuric electrolyte with 1.0 M H3BO3 exhibits enhanced photocurrent response, and high efficiency and rate constant for dye degradation, which is ascribed to the synergistic effect of the new impurity energy band induced by introducing boron to the interstitial site and the improvement of charge transfer reaction.

Piston Crevice Hydrocarbon Oxidation During Expansion Process in an SI Engine

  • Kyoungdoug Min;Kim, Sejun
    • Journal of Mechanical Science and Technology
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    • 제17권6호
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    • pp.888-895
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    • 2003
  • Combustion chamber crevices in SI engines are identified as the largest contributors to the engine-out hydrocarbon emissions. The largest crevice is the piston ring-pack crevice. A numerical simulation method was developed, which would allow to predict and understand the oxidation process of piston crevice hydrocarbons. A computational mesh with a moving grid to represent the piston motion was built and a 4-step oxidation model involving seven species was used. The sixteen coefficients in the rate expressions of 4-step oxidation model are optimized based on the results from a study on the detailed chemical kinetic mechanism of oxidation in the engine combustion chamber. Propane was used as the fuel in order to eliminate oil layer absorption and the liquid fuel effect. Initial conditions of the burned gas temperature and in-cylinder pressure were obtained from the 2-zone cycle simulation model. And the simulation was carried out from the end of combustion to the exhaust valve opening for various engine speeds, loads, equivalence ratios and crevice volumes. The total hydrocarbon (THC) oxidation in the crevice during the expansion stroke was 54.9% at 1500 rpm and 0.4 bar (warmed-up condition). The oxidation rate increased at high loads, high swirl ratios, and near stoichiometric conditions. As the crevice volume increased, the amount of unburned HC left at EVO (Exhaust Valve Opening) increased slightly.

결정 배향에 따른 Si의 열산화 거동 및 전기적 특성 (Thermal Oxidation Behavior and Electrical Characteristics of Silicon depending on the Crystal Orientation)

  • 우현정;최두진;양두영
    • 한국세라믹학회지
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    • 제31권7호
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    • pp.753-758
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    • 1994
  • (100) Si and 4$^{\circ}$off (100) Si were oxidized in dry oxygen, and the differences in thermal oxidation behavior and electrical characteristics between two specimens were investigated. Ellipsometer measurements of the oxide thickness produced by oxidation in dry oxygen from 1000 to 120$0^{\circ}C$ showed that the oxidation rates of the 5$^{\circ}$ off (100) Si were more rapid than those of the (100) Si and the differences between them decreased as the oxidation temperature increased. The activation energies based on the parabolic rate constant, B for (100) and 4$^{\circ}$off (100) Si were 25.8, 28.6 kcal/mol and those on the linear rate constant, B/A were 56.8, 54.9 kcal/mol, respectively. Variation of C-V characteristics with the oxidation temperature showed that the flat band voltages were shifted positively and surface state charge densities decreased as the oxidation temperature increased, and the surface state charge density of the 4$^{\circ}$off (100) Si was lower than that of the (100) Si. Also considerable decrease in the density of oxidation induced stacking faults (OSF) for the 4$^{\circ}$off (100) Si was observed through optical microscopy after preferentially etching off the oxide layer.

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Ti-Al-N과 Ti-Al-Si-N 코팅막의 상 특성 및 내산화 거동 (Phase Characterization and Oxidation Behavior of Ti-Al-N and Ti-Al-Si-N Coatings)

  • 김정욱;전준하;조건;김광호
    • 한국표면공학회지
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    • 제37권3호
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    • pp.152-157
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    • 2004
  • Ti-Al-N ($Ti_{75}$ $Al_{25}$ N) and Ti-Al-Si-N ($Ti_{69}$ $Al_{23}$ $Si_{8}$N) coatings synthesized by a DC magnetron sputtering technique were studied comparatively with respect to phase characterization and high-temperature oxidation behavior. $Ti_{69}$ $Al_{23}$ $Si_{ 8}$N coating had a nanocomposite microstructure consisting of nanosized(Ti,Al,Si)N crystallites and amorphous $Si_3$$N_4$, with smooth surface morphology. Ti-Al-N coating of which surface $Al_2$$O_3$ layer formed during oxidation suppressed further oxidation. It was sufficiently stable against oxidation up to about $700^{\circ}C$. Ti-Al-Si-N coating showed better oxidation resistance because both surface Ab03 and near-surface $SiO_2$ layers suppressed further oxidation. XRD, GDOES, XPS, and scratch tests were performed.

니켈기 초합금의 고온산화거동과 표면개질에 관한 연구 (High temperature oxidation behavior and surface modification of Ni-based superalloys)

  • 설경원
    • 한국재료학회지
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    • 제4권2호
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    • pp.166-176
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    • 1994
  • Ni기 초합금은 Co, Cr, Mo, W등의 고용 강화 원소와 AI, Ti, Nb, Ta 등의 $\gamma '$ 석출 강화 원소로 구성되어 있다. 초합금의 기계적 성질과 내산화성을 개선하기 위하여 희토류 원소를 재료 내부에 첨가하거나, 코팅 재료로써 사용하고 있다. 이들 희토류 원소는 $Al_2O_3, Cr_2O_3$등의 산화물의 종류에 따라 산화물의 성장 속도와 밀착성에 영향을 미친다. Hf함유 Ni기 초합금 AF115와 $AI_2O_3$ 함유 MA6000초합금 2종을 이온 코터를 이용, Yttrium 표면개질후, 온도 1273K-1473K에서 고온 산화 수 산호 피막의 성장 속도, 결정립, 내부 구조 및 내박리성에 미치는 Yttrium 의 영향을 조사하였다. AF115와 MA6000 초합금에 Yttrium코팅을 한 결과 내부 산화물의 성장에 현저한 변화가 있었다. Yttrium의 표면 개질에 의하여, AF115의 경우는 $AI_2O_3$ 주성분의 입계 집중과 Hf의 우선 산확 억제되고, 삼각 형태의 내부 산화물이 plate형으로 변화되었다. MA6000의 경우 $AI_2O_3$ 주성분의 산화층이$Cr_2O_3$주성분의 외부 산화층과$AI_2O_3$ 주성분의 내부층으로 변화되었다.

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