• Title/Summary/Keyword: Oxidation layer

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High Temperature Oxidation Behavior of Ni-W Coatings Electrodeposited on Steel (강기판 위에 코팅된 Ni-W의 고온산화거동)

  • 고재황;권식철;장도연;이동복
    • Journal of the Korean institute of surface engineering
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    • v.36 no.6
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    • pp.430-436
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    • 2003
  • The nanoocrystalline Ni-l5W(at.%) coating electrodeposited on the high carbon steel was oxidized at 700 and $800^{\circ}C$ in air, and the resultant oxidation properties were investigated using XRD, EPMA, TGA and TEM. The oxidation resistance of the coating was not so good that most of the coating was oxidized after oxidation at $800^{\circ}C$ for 5 hrs. The oxidation led to the formation of the outer, thin NiO oxide scale and the inner, porous, rather thick ($NiWO_4$+NiO) mixed layer containing a bit of $WO_2$. During oxidation, substrate elements such as Fe and Cr diffused outwardly toward the coating, according to the concentration gradient.

Gas Permeation Characteristics of Microporous Alumina Membrane Prepared by Anodic oxidation (양극산화에 의한 다공성 알루미나 막의 제조 및 기체투과 특성)

  • Shim, Won;Lee, Chang-Woo;Hahm, Yeong-Min
    • Applied Chemistry for Engineering
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    • v.10 no.2
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    • pp.212-217
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    • 1999
  • Porous alumina membrane with asymmetrical structure was prepared by anodic oxidation under constant DC current mode in aqueous solution of sulfuric acid. In order to produce membrane with improved properties, the aluminium plate was pre-treated with thermal oxidation, chemical polishing and electrochemical polishing before anodic oxidation. The thickness and pore diameter of the membrane were controlled by current density and charge density, respectively. The upper layer of 20 nm under of pore diameter was produced under very low current density while the lower layer of 36 nm pore diameter was produced under higher current density. The thickness of the membrane was about $80{\sim}90{\mu}m$ and that of the upper layer was $6{\mu}m$. We found that the mechanism of gas permeation through the membrane depended on Knudsen diffusion.

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Effect of Preoxidation on the Zircaloy-4 Oxidation Behavior in a Steam and Water Mixture between $700^{\circ}C$ and 85$0^{\circ}C$ (수증기와 물의 혼합 분위기에서 기산화층이 지르칼로이 -4의 산화 거동에 미치는 영향)

  • Yoo, Jong-Sung;Kim, In-Sup
    • Nuclear Engineering and Technology
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    • v.19 no.2
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    • pp.122-129
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    • 1987
  • Experiments and numerical analysis have been performed to investigate the effect of preoxidation by oxidizing Zircaloy-4 specimens at a higher temperature after a period of exposure at a lower temperature. The oxidation experiments were performed between $700^{\circ}C$ and 85$0^{\circ}C$ after Preoxidation at $650^{\circ}C$ in a steam and water mixture for 600 seconds and 1,800 seconds. As the thickness of preoxidized layer increased, the oxidation rate of preoxidized specimens at higher temperature became lower than that of as-received claddings. A transition region of oxidation rate exist in the preoxidized specimens, and the region disappeared rapidly as the oxidation temperature increased. This effect appeared more clearly at lower temperatures. According to the results of numerical analysis performed in this study, the growth rate of oxide layer thickness and weight gains were similarly affected by the thickness of preoxidized layer.

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Selective Oxidation of Single Crystalline AlAs layer on GaAs substrate and XPS(X-ray photoelectron spectroscopy) Analysis (GaAs 기판위에 성장된 단결정 AlAs층의 선택적 산화 및 XPS (X-ray photonelectron spectroscopy) 분석)

  • Lee, Suk-Hun;Lee, Young-Soo;Tae, Heung-Sik;Lee, Young-Hyun;Lee, Jung-Hee
    • Journal of Sensor Science and Technology
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    • v.5 no.5
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    • pp.79-84
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    • 1996
  • A $1\;{\mu}m$ thick n-type GaAs layer with Si doping density of $1{\times}10^{17}/cm^{3}$ and a $500{\AA}$ thick undoped single crystalline AlAs layer were subsequently grown by molecular beam epitaxy on the $n^{+}$ GaAs substrate. The AlAs/GaAs layer was oxidized in $N_{2}$ bubbled $H_{2}O$ vapor($95^{\circ}C$) ambient at $400^{\circ}C$ for 2 and 3 hours. From the result of XPS analysis, small amounts of $As_{2}O_{3}$, AlAs, and elemental As were found in the samples oxidized up to 2 hours. After 3 hours oxidation, however, various oxides related to As were dissolved and As atoms were diffused out toward the oxide surface. The as-grown AlAs/GaAs layer was selectively converted to $Al_{2}O_{3}/GaAs$ at the oxidation temperature $400^{\circ}C$ for 3 hours. The oxidation temperature and time is very critical to stop the oxidation at the AlAs/GaAs interface and to form a defect-free surface layer.

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Effect of Phosphoric Acid on the Electronic and Diffusion Properties of the Anodic Passive Layer Formed on Pb-1.7%Sb Grid of Lead-acid Batteries

  • El-Rahman, H.A. Abd;Salih, S.A.;El-Wahab, A.M. Abd
    • Journal of Electrochemical Science and Technology
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    • v.2 no.2
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    • pp.76-84
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    • 2011
  • Potentiostatic oxidation of Pb-1.7%Sb alloy used in the manufacture of grids of lead-acid batteries over the potential range from -1.0V to 2.3V in 5M $H_2SO_4$ in the absence and the presence of 0.4M $H_3PO_4$ and the self-discharge characteristics of the oxide layer formed is studied by electrochemical impedance spectroscopy (EIS). Depending on the potential value, sharp variations in resistance and capacitance of the alloy are recorded during the oxidation and they can be used for identification of the various substances involved in passive layer. Addition of $H_3PO_4$ is found to deteriorate the insulating properties of the passive layer by the retardation of the formation of $PbSO_4$. $H_3PO_4$ completely inhibits the current and impedance fluctuations recorded in $H_3PO_4$-free solutions in the potential range 0.5 V-1.7 V. These fluctuations are attributed to the occurrence of competitive redox processes that involve the formation of $PbSO_4$, $PbOSO_4$, PbO and $PbO_2$ and the repeated formation and breakdown of the passive layer. Self-discharge experiments indicate that the amount of $PbO_2$ formed in the presence of $H_3PO_4$ is lesser than in the $H_3PO_4$-free solutions. The start of transformation of $PbSO_4$ into $PbO_2$ is greatly shortened. $H_3PO_4$ facilitates the diffusion process of soluble species through the passive layer ($PbSO_4$ and basic $PbSO_4$) but impedes the diffusion process through $PbO_2$.

Influence of Electrolytic KF on the Uniform Thickness of Oxide Layers Formed on AZ91 Mg Alloy by Plasma Electrolytic Oxidation

  • Song, Duck-Hyun;Lim, Dae-Young;Fedorov, Vladimir;Song, Jeong-Hwan
    • Korean Journal of Materials Research
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    • v.27 no.9
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    • pp.495-500
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    • 2017
  • Oxide layers were formed by an environmentally friendly plasma electrolytic oxidation (PEO) process on AZ91 Mg alloy. PEO treatment also resulted in strong adhesion between the oxide layer and the substrate. The influence of the KF electrolytic solution and the structure, composition, microstructure, and micro-hardness properties of the oxide layer were investigated. It was found that the addition of KF instead of KOH to the $Na_2SiO_3$ electrolytic solution increased the electrical conductivity. The oxide layers were mainly composed of MgO and $Mg_2SiO_4$ phases. The oxide layers exhibited solidification particles and pancake-shaped oxide melting. The pore size and surface roughness of the oxide layer decreased considerably with an increase in the concentration of KF, while densification of the oxide layers increased. It is shown that the addition of KF to the basis electrolyte resulted in fabricating of an oxide layer with higher surface hardness and smoother surface roughness on Mg alloys by the PEO process. The uniform thickness of the oxide layer formed on the Mg alloy substrates was largely determined by the electrolytic solution with KF, which suggests that the composition of the electrolytic solution is one of the key factors controlling the uniform thickness of the oxide layer.

Substrate dependence of the deposition behavior of $CeO_2$ buffer layer prepared by MOCVD method (MOCVD 법에 의해 제조된 $CeO_2$ 버퍼층 증착 거동의 기판 의존성)

  • Jun, Byung-Hyu;Choi, Jun-Kyu;Jung, Woo-Young;Lee, Hee-Gyoun;Hong, Gye-Won;Kim, Chan-Joong
    • Progress in Superconductivity
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    • v.7 no.2
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    • pp.130-134
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    • 2006
  • Buffer layers such as $CeO_2\;and\;Yb_2O_3$ films for YBCO coated conductors were deposited on (100) $SrTiO_3$ single crystals and (100) textured Ni substrates by a metal organic chemical vapor deposition (MOCVD) system of the hot-wall type. The substrates were moved with the velocity of 40 cm/hr. Source flow rate, $Ar/O_2$ flow rate and deposition temperature were main processing variables. The degree of film epitaxy and surface morphology were investigated using XRD and SEM, respectively. On a STO substrate, the $CeO_2$ film was well grown epitaxially above the deposition temperature of $450^{\circ}C$. However, on a Ni substrate, the XRD showed NiO (111) and (200) peaks due to Ni oxidation as well as (111) and (200) film growth. For the films deposited with $O_2$ gas as oxygen source, it was found that the NiO film was formed at the interface between the buffer layer and the Ni substrate. The NiO layer interrupts the epitaxial growth of the buffer layer. It seems that the epitaxial growth of the buffer layer on Ni metal substrates using $O_2$ gas is difficult. We are considering a new method avoiding Ni oxidation with $H_2O$ vapor instead of $O_2$ gas.

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Investigation About Surface Microstructure of Aluminum with Change of Voltage, a Period of Treatment and Density of Electrolyte in Micro-Arc Oxidation Treatment (MAO(Micro-Arc Oxidation) 공정 중 인가 전압, 반응 시간, 전해액 농도에 따른 알루미늄의 표면 미세조직 평가)

  • Yeo, In-Chul;Kang, In-Cheol
    • Journal of Powder Materials
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    • v.18 no.6
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    • pp.575-582
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    • 2011
  • MAO(Micro-Arc Oxidation) method was used to make $Al_2O_3$ surface on 6063 Al specimen. This study was focused on an influence of voltage, density of electrolyte and a period of treatment on the change of surface microstructure by using SEM(Scanning Electron Microscope), EDS(Energy Dispersive X-ray Spectroscopy). The microstructure shows higher roughness and thicker oxidized layer with increase of voltage and maintaining period of treatment. The density of electrolyte affected a formation of more dense surface and increase of a oxidized layer.

Mechanical Properties & Ablation Mechanism of SiC Coated Carbon/Carbon Composite by Pack-cementation Method

  • Kim, J.I.;Oh, I.S.;Joo, H.J.
    • Carbon letters
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    • v.2 no.1
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    • pp.27-36
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    • 2001
  • The pack-cementation process is the method which is formed SiC coating layer to improve weak oxidation properties of CFRCs (carbon fiber-reinforced carbons). This method develops the anti-oxidation coating layer having no dimensional changes and good wetting properties. In this study to improve the oxidative resistance of the prepared 4D CFRCs, the surface of CFRCs is coated by SiC using pack cementation method. The mechanical properties of SiC-coated 4D CFRCs are measured by the 3-point bending test, and their ablation properties are investigated by the arc torch plasma test. From the results, it is found that both mechanical and ablation properties of SiC-coated 4D CFRCs are much better than bare CFRCs.

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A Study of the Effect of Oxidation on the Mechanical Properties of Zircaloy-4 (Zircaloy-4에서 산화가 기계적 성질에 미치는 영향에 대한 연구)

  • 고진현;김상호;황용화
    • Journal of the Korean institute of surface engineering
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    • v.35 no.5
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    • pp.312-318
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    • 2002
  • A study on the change of mechanical properties and oxidation behavior of Zircaloy-4 fuel cladding after exposing at 90$0^{\circ}C$ and $1000^{\circ}C$ for various periods of exposure time under the steam atmosphere was carried out. The growth of the $ZrO_2$ layer combined with an oxygen-rich-phase layer into the Zircaloy tube material can be described by an expression, E = 1.1√Dt + $2 $\times$ 10^{-4}$ . The tensile strength of Zircaloy tubes increased for a short period of exposure time and decreased rapidly with further exposure while the hoop strength was not decreased greatly. In the meantime, the axial and circumferential elongations of oxidized Zircaloy tubes were decreased drastically with increasing exposure time as a result of embrittlement phenomena.