• Transactions of the Korean hydrogen and new energy society
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• v.20 no.6
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• pp.455-463
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• 2009

코발트 보호막 코팅이 적용된 페라이트계 스테인리스 스틸인 STS 430과 STS 444 소재에 대해 고체산화물 연료전지용 금속연결재로서의 고온 산화 특성에 대해 살펴보았다. 코발트 코팅층은 $800^{\circ}C$ 고온 산화 후 코발트 산화물 및 $Co_2CrO_4$, $CoCr_2O_4$, $CoCrFeO_4$ 등과 같은 코발트가 함유된 스피넬 상을 형성하였다. 또한 페라이트계 스테인리스 스틸과 코발트 코팅의 계면에서 크롬과 철이 함유된 치밀한 산화층을 형성하여 금속연결재 표면의 스케일 성장속도를 감소시키고 금속연결재 내에 함유된 크롬의 외부 확산을 효과적으로 억제하였다. 한편 STS 430은 고온 산화 후 표면에 형성된 스케일 하부에 $SiO_2$와 같은 내부 산화물이 형성된 반면 STS 444는 표면 스케일 이외에 다른 내부 산화물은 확인되지 않았으며 고온에서의 면저항 측정 결과, 코발트가 코팅된 STS 444의 전기 전도성이 STS 430 보다 우수한 것으로 나타났다.

• Korean Chemical Engineering Research
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• v.46 no.5
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• pp.965-970
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• 2008

The separation of sulfone components using light cycle oil(LCO) after oxidation was carried out by solvent extraction method using various polar solvents such as water, n-methyl-2-pyrrolidone(NMP), dimethyl sulfoxide, ethyl acetate, acetonitrile, dimethyl formamide, and methyl alcohol. It was found that phase separation between LCO layer and solvent occurred under mixed solvent adding a proper amount of water. The mixture solvent of NMP and water was a promising extraction solvent due to the selective removal and high distribution coefficient of sulfone component in LCO. 99.5% over of sulfur contents in LCO can be removed by 4 stages equilibrium extraction.

• Bulletin of the Korean Chemical Society
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• v.25 no.12
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• pp.1822-1828
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• 2004

Electrochemical, in situ electrochemical scanning tunneling microscope (EC-STM), and attenuated total reflectance-FTIR (ATR-FTIR) spectroscopic methods were employed to investigate the preparation of atomically flat Si(111)-H surface in ammonium fluoride solutions. Electrochemical properties of atomically flat Si(111)-H surface were characterized by anodic oxidation and cathodic hydrogen evolution with the open circuit potential (OCP) of ca. -0.4 V in concentrated ammonium fluoride solutions. As soon as the natural oxide-covered Si(111) electrode was immersed in fluoride solutions, OCP quickly shifted to near -1 V, which was more negative than the flat band potential of silicon surface, indicating that the surface silicon oxide had to be dissolved into the solution. OCP changed to become less negative as the oxide layer was being removed from the silicon surface. In situ EC-STM data showed that the surface was changed from the initial oxidecovered silicon to atomically rough hydrogen-terminated surface and then to atomically flat hydrogenterminated surface as the OCP moved toward less negative potentials. The atomically flat Si(111)-H structure was confirmed by in situ EC-STM and ATR-FTIR data. The dependence of atomically flat Si(111)-H terrace on mis-cut angle was investigated by STM, and the results agreed with those anticipated by calculation. Further, the stability of Si(111)-H was checked by STM in ambient laboratory conditions.

• Advances in environmental research
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• v.1 no.1
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• pp.37-55
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• 2012

Here we show that perchlorate reduction during pitting corrosion of zero-valent titanium (ZVT) is likely caused by dissolved titanium species, especially Ti(II). Several possible mechanisms were suggested based on the literature and were evaluated based on experimental observations. Direct reduction of perchlorate on the bare metal of the ZVT electrode was thermodynamically infeasible due to the high anodic potential that was applied. Other potential mechanisms were considered such as reduction by small ZVT metal particles released from the electrode and direct reduction on the oxide layer of the electrode where potential was sufficiently reduced by a high ohmic potential drop. However, these mechanisms were not supported by experimental results. The most likely mechanism for perchlorate reduction was that during pitting corrosion, in which ZVT is partially oxidized to form dissolved ions such as Ti(II), which diffuse from the electrode surface and react with perchlorate in solution. This mechanism is supported by measurements of the dissolution valence and the molar ratio of ZVT consumed to perchlorate reduced (${\Delta}Ti(0)/{\Delta}ClO_4{^-}$). The results shown in this study demonstrate that ZVT undergoing pitting corrosion has the capability to chemically reduce perchlorate by producing dissolved Ti(II) and therefore, it has the potential to be applied in treatment systems. On the other hand, the results of this research imply that the application of ZVT undergoing pitting corrosion in treatment systems may not be feasible now due to several factors, including material and electricity costs and possible chloride oxidation.

• Journal of the Korean Magnetics Society
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• v.8 no.5
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• pp.282-287
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• 1998

Dependence of magnetoresistance on base pressure and deposition rates of each Fe, Co, Cu layers in the $Fe(50{\AA}/[Co(17{\AA})/Cu(24{\AA})]_20$ multilayer thin films, prepared by dc magnetron sputtering on Corning glass, were investigated. AFM analysis, X-ray diffraction analysis, vibrating sample magnetometer analysis, and magnetoresustance measurement (4-probe method) were performed. The multilayer films deposited under low base pressure increases magnetoresistance ratio by preventing oxidation. Annealing for the samples at a moderate temperature allowed larger textured grain with no loss in the periodicity. Magnetoresistance ratio of the annealed multilayers was increased due to the increase antiferromagnetically coupled fraction of the film after annealing. Optimization of deposition rate was greater than 1 $\AA$/s for Fe, and 2.8 $\AA$/s for Cu. Deposition rate of Co showed a tendency of increasing of magnetoresistance ratio due to the formation of flat magnetic layer in case of high deposition rate of Co.

• Journal of the Korean Vacuum Society
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• v.19 no.2
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• pp.148-154
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• 2010

We have fabricated $SiO_2$ oxidation thin films by TCP-CVD (transformer coupled plasma chemical vapor deposition) method for passivation layer of OLED (organic light emitting diode). The purpose of this paper is to control and estimate the deposition rate and refracive index characteristics with process parameters. They are power, gas condition, distance of source and substrate and process temperature. The results show that transmittance of thin films is over 90%, rapid deposition rate and stable reflective index from 1.4 to 1.5 at controled process conditions. They are $SiH_4$ : $O_2$ = 30 : 60 [sccm] gas condition, 70 [mm] distance of source and substrate, no-biased substrate and under 80 [$^{\circ}C$] process temperature.

• Korean Journal of Materials Research
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• v.10 no.11
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• pp.749-764
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• 2000

Amorphous TaSiN thin films of about 90 nm thick were deposited onto poly-Si and $SiO_2/Si$ substrates by rf magnetron sputtering method. TaSiN films exhibited amorphous phase with no crystllization up to $900^{\circ}C$ in oxygen ambient. The penetration depth of oxygen diffusion increased with increasing annealing temperature in oxygen ambient and reached 20 nm deep in a $Ta_{23}Si_{29}N_{48}$ layer at $600^{\circ}C$ for 30min. The resistivity of as-deposited $Ta_{23}Si_{29}N_{48}$ thin films was about $1,300{\mu}{\Omega}-cm$, however those of annealed films markedly increased above $700^{\circ}C$ in oxygen ambient as the annealing temperature increased.

• Economic and Environmental Geology
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• v.43 no.6
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• pp.543-553
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• 2010

This study was focused on the mineralogical and geochemical characteristics of field soil of the Baekje Kingdom from K wongbawigol site in Jeongdongri, Buyeo and whether the bricks from Songsanri Tombs and Muryung's Royal Tomb were made of soil from this site. Soil samples show the similar size fraction as a silt loam and acidic soil, whereas some samples have the enrichment of organic matter, P and S. Also, they have similar geochemical behavior of elements and similar mineral phases consisting of quartz, plagioclase, orthoclase, vermiculite, mica and kaolinite. The enrichment of iron oxide is found in some soil layer, including the iron oxide mottling and precipitation along plant roots and they are attributed to repeat oxidation and reduction environments due to flooding and drainage of field soil. It's anthropogenic alteration by human activity. Especially, it is assumed that the concentration of the iron oxides found in bricks from Muryung's Royal Tomb and Songsanri Tombs is the additional evidence that soil in this study is probably the raw materials of those bricks.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2007.06a
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• pp.481-481
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• 2007

This work describes the effect of the number of roll pressing and the composition of carbon black on the electric and mechanical properties of carbon-PTFE electrode, in which composition is MSP 20 : carbon black: PTFE = 95-x : x : 5 wt.%. It was found that the best electric and mechanical properties were obtained in sheet electrode roll-pressed for about 15 times and in sheet electrode, in which composition is MSP 20 : carbon black: PTFE = 80 : 15 : 5 wt.%. These behaviors could be explained by the network structure of PTFE fibrils and conducting paths linked with carbon blacks, respectively. On the other hand, cell capacitor using the sheet electrode with 15 wt.% of carbon black attached on aluminum current collector with the electric conductive adhesive, in composition is carbon black : CMC = 70 : 30 wt.%, has exhibited the best rate capability in the current range of $0.5mA/cm^2$ $100mA/cm^2$ and the lowest equivalent series resistance.

• Journal of the Korean Vacuum Society
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• v.7 no.2
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• pp.88-93
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• 1998

The fabrication process and emission characteristics of gated silicon field emitter arrays(FEAs) using chemical-mechanical-polishing (CMP) method are described. Novel fabrication techniques consisting of two-step dry etching with oxidation of silicon and CMP processes were developed for the formation of sharp tips and clear-cut edged gate electrodes, respectively. The gate height and aperture could be easily controlled by varying the polishing time and pressure in the CMP process. We obtained silicon FEAs having self-aligned and clear-cut edged gate electrode opening by eliminating the dishing problem during the CMP process with an oxide mask layer. The tip height of the finally fabricated FEAs was about 1.1 $\mu$m and the end radius of the tips was smaller than 100 $\AA$. The emission current meaured from the fabricated 2809 tips array was about 31 $\mu$A at a gate voltage of 80 V.