• Title/Summary/Keyword: Output Matching Network

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The Frequency Adaptive antenna Matching Network Design for Improving Wireless LAN Performance (무선랜 송수신 특성 개선을 위한 주파수 적응형 안테나 정합 회로 구조 설계)

  • Park, Kyoung-Jin;Ra, Keuk-Hwan
    • Journal of the Institute of Electronics Engineers of Korea TC
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    • v.49 no.4
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    • pp.41-46
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    • 2012
  • This paper suggested that the frequency adaptive antenna matching network design between AP and WLAN(Wireless Local Area Network) terminal for improving performance. The internet data service of the WLAN terminal is communicated through the AP and AP broadcasts the beacon signal including the assigned frequency channel. at that time the antenna matching network path is controlled beacon information after the WLAN terminal searching and synchronization a beacon information. and then the WLAN terminal communicate with AP. controlling the antenna matching network path according to channel information, The WLAN terminal is expected to improve RF output power and sensitivity performance. The VSWR(Voltage Standing Wave Ratio) performance of the designed antenna matching network is measured to about 1.1 ~ 1.2 and then it is operated by the channel information of the AP.

Design Guidelines for a Capacitive Wireless Power Transfer System with Input/Output Matching Transformers

  • Choi, Sung-Jin
    • Journal of Electrical Engineering and Technology
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    • v.11 no.6
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    • pp.1656-1663
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    • 2016
  • A capacitive wireless power transfer (C-WPT) system uses an electric field to transmit power through a physical isolation barrier which forms a pair of ac link capacitors between the metal plates. However, the physical dimension and low dielectric constant of the interface medium severely limit the effective link capacitance to a level comparable to the main switch output capacitance of the transmitting circuit, which thus narrows the soft-switching range in the light load condition. Moreover, by fundamental limit analysis, it can be proved that such a low link capacitance increases operating frequency and capacitor voltage stress in the full load condition. In order to handle these problems, this paper investigates optimal design of double matching transformer networks for C-WPT. Using mathematical analysis with fundamental harmonic approximation, a design guideline is presented to avoid unnecessarily high frequency operation, to suppress the voltage stress on the link capacitors, and to achieve wide ZVS range even with low link capacitance. Simulation and hardware implementation are performed on a 5-W prototype system equipped with a 256-pF link capacitance and a 200-pF switch output capacitance. Results show that the proposed scheme ensures zero-voltage-switching from full load to 10% load, and the switching frequency and the link capacitor voltage stress are kept below 250 kHz and 452 V, respectively, in the full load condition.

A study on correspondence problem of stereo vision system using self-organized neural network

  • Cho, Y.B.;Gweon, D.G.
    • Journal of the Korean Society for Precision Engineering
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    • v.10 no.4
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    • pp.170-179
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    • 1993
  • In this study, self-organized neural network is used to solve the vorrespondence problem of the axial stereo image. Edge points are extracted from a pair of stereo images and then the edge points of rear image are assined to the output nodes of neural network. In the matching process, the two input nodes of neural networks are supplied with the coordi- nates of the edge point selected randomly from the front image. This input data activate optimal output node and its neighbor nodes whose coordinates are thought to be correspondence point for the present input data, and then their weights are allowed to updated. After several iterations of updating, the weights whose coordinates represent rear edge point are converged to the coordinates of the correspondence points in the front image. Because of the feature map properties of self-organized neural network, noise-free and smoothed depth data can be achieved.

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Concurrent Dual-Band Class-E Power Amplifier Using a Multi-Harmonic Matching Network (Multi-Harmonic Matching Network을 이용한 동시-이중 대역 Class-E 전력 증폭기)

  • Park, Seung-Won;Jeon, Sanggeun
    • The Journal of Korean Institute of Electromagnetic Engineering and Science
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    • v.25 no.4
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    • pp.401-410
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    • 2014
  • This paper presents a high-efficiency concurrent dual-band Class-E power amplifier(PA) that is based on a multi-harmonic matching network(MHMN). The proposed MHMN controls the impedance at 1.3 GHz, 2.1 GHz, and their second and third harmonics, respectively, by using transmission lines only rather than switches or lumped components. The dual-band Class-E PA is implemented using Avago ATF-50189 GaAs p-HEMT. The PA exhibits a measured output power of 27.1 dBm and 25.7 dBm, a power gain of 6.1 dB and 4.7 dB, and a drain efficiency of 71.2 % and 60.1 % at 1.3 GHz and 2.1 GHz, respectively.

Design of Ultra-broadband Microwave Amplifier Using Immittance Loci of Constant Gain (일정 이득 이미턴스 궤적을 이용한 초광대역 마이크로파 증폭기 설계)

  • 구경헌;이충웅
    • Journal of the Korean Institute of Telematics and Electronics
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    • v.27 no.9
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    • pp.1344-1350
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    • 1990
  • A design method of ultra-broadband microwave amplifier is presented. A lossy network is represented as the combination of a serial impedance component and a parallel admittance component, and the realizable ranges of the gain and the reflection coefficients are derived with the components connected to the input, output or interstage network. The matching network has been designed by using the serial and parallel immittance loci which have the constant gain or reflection coefficients within the realizable ranges. Using the proposed method, deisgn examples of ultra-broadband amplifiers operating from dc to 12GHz frequency range are presented.

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A Transformer-Matched Millimeter-Wave CMOS Power Amplifier

  • Park, Seungwon;Jeon, Sanggeun
    • JSTS:Journal of Semiconductor Technology and Science
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    • v.16 no.5
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    • pp.687-694
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    • 2016
  • A differential power amplifier operating at millimeter-wave frequencies is demonstrated using a 65-nm CMOS technology. All of the input, output, and inter-stage network are implemented by transformers only, enabling impedance matching with low loss and a wide bandwidth. The millimeter-wave power amplifier exhibits measured small-signal gain exceeding 12.6 dB over a 3-dB bandwidth from 45 to 56 GHz. The output power and PAE are 13 dBm and 11.7%, respectively at 50 GHz.

Research Dual Band Power Amplifier using PBG Structure (PBG 구조를 이용한 Dual Band 전력증폭기 연구)

  • 전익태;서철헌
    • The Journal of Korean Institute of Electromagnetic Engineering and Science
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    • v.15 no.8
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    • pp.788-793
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    • 2004
  • This paper proposes new configuration for the dual power amplifier that operates at 5.8 GHz for the wireless LAN and 1.8 GHz for the PCS. It dose not select the input signal but amplify the dual band signals simultaneously. Broadband diplexer is used at the input to separate the dual band signals. Output power of each amplifier is 1 W. The PBG is employed to improve the performance of power amplifier. Generally, the PBG is employed at the end of output matching network. But in this paper, the PBG is employed in the load pull output matching circuit of amplifer to maximize the output power.

A Fully Integrated 5-GHz CMOS Power Amplifier for IEEE 802.11a WLAN Applications

  • Baek, Sang-Hyun;Park, Chang-Kun;Hong, Song-Cheol
    • JSTS:Journal of Semiconductor Technology and Science
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    • v.7 no.2
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    • pp.98-101
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    • 2007
  • A fully integrated 5-GHz CMOS power amplifier for IEEE 802.11a WLAN applications is implemented using $0.18-{\mu}m$ CMOS technology. An on-chip transmission-line transformer is used for output matching network and voltage combining. Input balun, inter-stage matching components, output transmission line transformer and RF chokes are fully integrated in the designed amplifier so that no external components are required. The power amplifier occupies a total area of $1.7mm{\times}1.2mm$. At a 3.3-V supply voltage, the amplifier exhibits a 22.6-dBm output 1-dB compression point, 23.8-dBm saturated output power, 25-dB power gain. The measured power added efficiency (PAE) is 20.1 % at max. peak, 18.8% at P1dB. When 54 Mbps/64 QAM OFDM signal is applied, the PA delivers 12dBm of average power at the EVM of -25dB.

A Study on the Broadband Microwave Amplifier Design Using Potentially Unstable GaAs FET (Potentially Unstable한 GaAs FET를 이용한 광대역 마이크로파증폭기에 관한 연구)

  • Hong, Jae-Pyo;Cho, Young-Ki;Son, Hyon
    • The Journal of Korean Institute of Communications and Information Sciences
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    • v.12 no.1
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    • pp.19-26
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    • 1987
  • The broadband microwave amplifier in the 3~4GHz frequency range has been designed by using potentially unstable GaAs FET. Input matching network is designed by 14dB available power gain circles which are in the stable region. In order to obtain maximu, transducer power gain, output matching network which is in the stable region can be designed using Fano's bandpass matching network. The measured values of transducer power gain, $S_11$and $S_22$ show close agreements with the theoretical valuse.

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Design of Dual-band Power Amplifier using CRLH of Metamaterials (메타구조의 CRLH를 이용한 이중대역 전력증폭기 설계)

  • Ko, Seung-Ki;Seo, Chul-Hun
    • Journal of the Institute of Electronics Engineers of Korea TC
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    • v.47 no.12
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    • pp.78-83
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    • 2010
  • In this paper, a novel dual-band power amplifier using metamaterials has been realized with one RF GaN HEMT diffusion metal-oxide-semiconductor field effect transistor. The CRLH TL can lead to metamaterial transmission line with the dual-band tuning capability. The dual-band operation of the CRLH TL is achieved by the frequency offset and the nonlinear phase slope of the CRLH TL for the matching network of the power amplifier. We have managed only the second- and third-harmonics to obtain the high efficiency with the CRLH TL in dual-band. Also, the proposed power amplifier has been realized by using the harmonic control circuit for not only the output matching network, but also the input matching network for better efficiency. Two operating frequencies are chosen at 900 MHz and 2140 MHz in this work. The measured results show that the output power of 39.83 dBm and 35.17 dBm was obtained at 900 MHz and 2140 MHz, respectively. At this point, we have obtained the power-added efficiency (PAE) and IMD of 60.2 %, -23.17dBc and 67.3 %, -25.67dBc at two operation frequencies, respectively.