• Bulletin of the Korean Chemical Society
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• v.24 no.7
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• pp.953-956
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• 2003

Hexagonal GaN (h-GaN) films have been grown on Si(111) substrates by metal organic chemical vapor deposition using the azidodiethylgallium methylamine adduct, Et₂Ga(N₃)·NH₂Me, as a new single precursor. Deposition was carried out in the substrate temperature range 385-650 °C. The GaN films obtained were stoichiometric and did not contain any appreciable amounts of carbon impurities. It was also found that the GaN films deposited on Si(111) had the [0001] preferred orientation. The photoluminescence spectrum of a GaN film showed a band edge emission peak characteristic of h-GaN at 378 nm.

• The Bulletin of The Korean Astronomical Society
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• v.44 no.1
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• pp.44.4-44.4
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• 2019

The supernova remnant Cassiopeia A (Cas A) provides a unique opportunity to observe the fine details of the explosion of core-collapse supernova (SN). Previous optical and near-infrared (NIR) observations of Cas A have shown that the spatial distribution of the metal-enriched SN ejecta is very complicated, indicating that the SN explosion should have been asymmetric and turbulent, especially near the core. Recently, we obtained a long-exposure (~10 hr) image of Cas A by using the UKIRT 3.6-m telescope with a narrow-band filter centered at [Fe II] 1.644 um emission. This 'deep [Fe II] image' provides an unprecedented panoramic view of Cas A, revealing the distribution of dense SN ejecta over the entire remnant. We have carried out NIR multi-object spectroscopic observations of the dense ejecta knots in the northeastern (NE) and eastern (E) outer regions of the remnant using the MMIRS attached on the MMT 6.5-m telescope. A total of 67 ejecta knots are detected. By analyzing their spectra, we have found that the knots in the NE area show strong [S II]/[S III] and [Fe II] lines but little or no [P II] line, while those in the E outer region show strong [Fe II] lines but weak [S II]/[S III] lines. In this talk, we present the preliminary results of our NIR spectroscopic observations and discuss the implications.

• Carbon letters
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• v.13 no.1
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• pp.34-38
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• 2012

Successful application of graphene requires development of various tools for its chemical modification. In this paper, we present a Raman spectroscopic investigation of the effects of UV light on single layer graphene with and without the presence of $O_2$ molecules. The UV emission from a low pressure Hg lamp photolyzes $O_2$ molecules into O atoms, which are known to form epoxy on the basal plane of graphene. The resulting surface epoxy groups were identified by the disorder-related Raman D band. It was also found that adhesive residues present in the graphene samples prepared by micro-mechanical exfoliation using adhesive tape severely interfere with the O atom reaction with graphene. The UV-induced reaction was also successfully applied to chemical vapor deposition-grown graphene. Since the current method can be readily carried out in ambient air only with UV light, it will be useful in modifying the surfaces of graphene and related materials.

• Bulletin of the Korean Chemical Society
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• v.33 no.10
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• pp.3383-3386
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• 2012

SnS thin films were deposited on glasses through metal organic chemical vapor deposition (MOCVD) method at relatively mild conditions, using bis(3-mercapto-1-propanethiolato) tin(II) precursor without toxic $H_2S$ gas. The MOCVD process was carried out in the temperature range of $300-400^{\circ}C$ and the average grain size in fabricated SnS films was about 500 nm. The optical band gap of the SnS film was about 1.3 eV which is in optimal range for harvesting solar radiation energy. The precursor and SnS films were characterized through infrared spectroscopy, nuclear magnetic resonance spectroscopy, DIP-EI mass spectroscopy, elemental analyses, thermal analysis, X-ray diffraction, and field emission scanning electron microscopic analyses.

• The Journal of Korean Institute of Communications and Information Sciences
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• v.41 no.1
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• pp.80-82
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• 2016

In this letter, we evaluate the performances of both GOOK and GFSK de/modulation techniques which are candidates for ULP communications in WPAN systems. For the performance evaluation, we define the system model for each of GOOK and GFSK de/modulations and perform computer simulations based on the proposed models. From the computer simulations, we show that GOOK de/modulation technique has 15 dB out-of-band emission gain and is robust over frequency offsets in terms of BER compared to GFSK de/modulation technique.

• Journal of Astronomy and Space Sciences
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• v.14 no.2
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• pp.320-329
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• 1997

A solar radio spectrograph for monitoring solar radio emission was installed at Ichon branch of Radio Research Laboratory in 1995. The spectrograph consists of three different antennas to sweep a wide band of frequencies in the range of 30MHz~2500MHz. We have developed the operating software for the acquisition and the analysis of solar radio data obtained by solar radiospectrograph in order to carry out active solar radio observational studies. It was found that by using our software, we could have very good solar radio data for a sequence of three TYPE III bursts observed on 4 Nov. 1997. In this paper, we show the radio spectrograph and the result of the observation by its operating software.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2009.06a
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• pp.309-309
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• 2009

In-Ga-Zn-O (IGZO) has drawn much attention as a compatible material for transparent thin film transistors (TTFT) channel layer due to its high mobility and optical transparency at low processing temperatures. In this work, we investigated the effect of oxygen ambient on structural, electrical and optical properties of amorphous In-Ga-Zn-O (IGZO) thin films by using pulsed laser deposition (PLD). The films were deposited at various oxygen pressures and the structural, electrical and optical properties were investigated. X-ray diffraction (XRD) analysis showed that amorphous IGZO films were grown at all oxygen pressures. The surface morphology and optical properties with various oxygen pressures were studied by field emission scanning electron microscopy (FE-SEM) and UV-VIS spectroscopy, respectively. The grain boundary was observed more apparently and the calculated optical band gap became larger as oxygen pressure increased. To examine the electrical properties, Hall-effect measurements were carried out. The films showed high mobility.

• Journal of the Korean Ceramic Society
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• v.39 no.9
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• pp.896-901
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• 2002

Since many process parameters of FHD(Flame Hydrolysis Deposition) are involved in forming multi-component amorphous silica film ($SiO_2-B_2O_3-P_2O_5-GeO_2$), it has not been easy to predict the optical, mechanical and thermal properties of deposited film from the simple process parameters, such as source flow rate. Furthermore, the prediction of final composition of film becomes even more difficult after sintering at high temperature due to the evaporation of volatile dopants. The motivation of the study was to clarify the quantitative relationship between simple process parameters such as the flow rate of source gases and resulting chemical composition of sintered film. Hence, the compositional analysis of silica soot by FTIR(Fourier Transformation Infrared Spectroscopy) and ICP-AES(Inductively Coupled Plasma-Atomic Emission Spectrometry) under the control of the amount of dopant was carried out to obtain the quantitative composition. By measuring spectrum of absorbance from FTIR, the compositional change of B-O, Si-O, OH($H_2O$) in silica film was measured. The concentrations of these dopants were also measured by ICP-AES, which were compared with the FTIR result. The final quantitative relationship between simple process parameters and composition was deduced from the comparison between two results.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.48 no.7
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• pp.10-16
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• 2011

We report on the simulation results of electrical/optical characteristics for nonpolar GaN LED having Mg-doped GaN spacer and quantum barrier, in comparison with those of the typical nonpolar GaN LED. In order to reduce the band-gap energy distortion and conduction-band discontinuity in InGaN/GaN multiple quantum wells(MQWs) of nonpolar GaN LED, and thereby to increase their current-voltage, light output power and emission peak intensity, we applied 6 nm-thick p-type($1{\times}10^{18}\;cm^{-3}$) GaN spacer and GaN QB schemes to the typical nonpolar GaN LED epitaxial structure. As a result, we found that the radiative recombination rate was increased by 23% in MQWs at 20 mA current injection. Also, the forward voltage($V_f$) and the light output power($P_{out}$) were improved by 3.7% and 7%, respectively, for the proposed nonpolar LED epitaxial structure, compared with those of the typical nonpolar GaN LED.

• Korean Journal of Materials Research
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• v.8 no.8
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• pp.667-671
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• 1998

The photoluminescence (pL) characteristics of hydride vapor phase epiyaxy (HVPE) grown GaN films on $MgAl_{2}O_{4}$ substrate were investigated with several growth conditions. The GaN films on $MgAl_{2}O_{4}$ substrate is autodoped with Mg atoms which thermally out-diffused from substrate lead to a PL characteristics of impurity doped ones. The Mg-related emission band intensity decreased with growth temperature may due to the evaporation of Mg atoms at the GaN film surfaces. and it also decreased with GaN film thicknesses. We can estimate the diffusion coefficient of Mg atoms in GaN under the consideration of diffusion phenomena between two infinite solids lead to a value of D= 2$\times$$lO^{-10}\textrm{cm}^2/sec.