• 제목/요약/키워드: Orthorhombic-NiSi

검색결과 6건 처리시간 0.022초

Orthorhombic-NiSi/Si (010) 구조의 Pd 치환 연구: 제 1 원리 계산 (Study of Pd substitution in orthorhombic-NiSi/Si (010) structure: First principles calculation)

  • 김대희;김대현;서화일;김영철
    • 반도체디스플레이기술학회지
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    • 제7권4호
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    • pp.41-44
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    • 2008
  • NiSi is less stable than the previously-used $CoSi_2$ at high temperature. Some noble metals, such as Pd and Pt, have been added to NiSi to improve its thermal stability. We employed a first principles calculation to understand the Pd segregation at the interface. An orthorhombic structure of NiSi was used to construct an orthorhombic-NiSi/Si (010). Lattice parameters along a- and c-axes in orthorhombic-NiSi were matched with those of Si for epitaxy contact. The optimized $1\times4\times1$ orthorhombic-NiSi (010) and $1\times2\times1$ Si (010) superstructures were put together to construct the orthorhombic-NiSi/Si (010), and the superstructure was relieved in calculation to minimize its total free energy. The optimized interface thickness of the superstructure was $1.59\AA$. Pd atom was substituted in Ni and Si sites located near interface. Both Ni and Si sites located at the interface were favorable for Pd substitution.

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Density Functional Theory를 이용한 orthorhombic-NiSi (010)/Si 계면 층의 구조 연구 (Structural study of interface layers in orthorhombic-NiSi (010)/Si using density functional theory)

  • 김대희;김대현;서화일;김영철
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2008년도 추계학술대회 논문집 Vol.21
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    • pp.107-108
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    • 2008
  • We calculated orthorhombic-NiSi (010)/Si superstructure. Orthorhombic-NiSi was changed to tetragonal structure to be matched with Si substrate. Eight models were produced by the type of Si substrate. In the case of orthorhombic-NiSi (010)/Si (020)[00-1], it was the most favorable energetically and the shortest of the distance between two superstructures. However, in the case of orthorhombic-NiSi (010)/Si (010)[00-1], it was the most unfavorable energetically and the longest of the distance. The energy and distance of orthorhombic-NiSi (010)/Si superstructure were changed by the coordination number of Ni atom and the bond length of atom-atom at the interface.

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밀도범함수를 이용한 정방정계-NiSi (010)/Si 계면 층의 구조 연구 (Structural Study of Interface Layers in Tetragonal-NiSi (010)/Si using Density Functional Theory)

  • 김대희;김대현;서화일;김영철
    • 한국전기전자재료학회논문지
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    • 제22권5호
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    • pp.377-381
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    • 2009
  • Tetragonal-NiSi (010)/Si superstructures were calculated for studying the interface structure using density functional theory, The orthorhombic-NiSi was changed to the tetragonal-NiSi to be matched with the Si surface for epitaxy interface. The eight interface models were produced by the type of the Si surfaces, The tetragonal-NiSi (010)/Si (020)[00-1] superstructure was energetically the most favorable, and the interface thickness of this superstructure was the shortest among the tetragonal-NiSi (010)/Si superstructures. However, in the case of tetragonal-NiSi (010)/Si (010)[00-1] superstructure, it was energetically the most unfavorable, and the interface thickness was the longest. The energies and interface thicknesses of tetragonal-NiSi (010)/Si superstructures were influenced by the coordination number of Ni atoms and the bond length between atoms located at the interface.

DFT를 이용한 Si (001) 기판의 에피택시 NiSi 구조 연구 (Structural Study of Epitaxial NiSi on Si (001) Substrate by Using Density Functional Theory (DFT))

  • 김대희;서화일;김영철
    • 반도체디스플레이기술학회지
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    • 제6권4호
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    • pp.65-68
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    • 2007
  • An epitaxial NiSi structure on Si (001) substrate was studied by using density functional theory (DFT). Orhorhombic and B2-NiSi structures were compared first. B2 structure was further considered as it has same crystal structure as Si and the lattice mismatch between B2 and Si is small, compared to orthorhombic-NiSi. The lattice parameters of x- and y-direction in B2-NiSi structure were modified to match with those in Si (001). The size reduction of the lattice parameter of B2-NiSi to match with that of Si increased the lattice parameter of z-direction by 10.5%. Therefore, we propose that an optimum structure of NiSi for epitaxial growth on Si (001) is a tetragonal structure.

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Photoferroelectric 반도체의 광학적 특성 연구 IV. (SbSI:V, SbSeI:V, BiSI:V, BiSeI:V, SbSI:Cr, SbSeI:Cr, BiSI:Cr, BiSeI:Cr, SbSI:Ni, SbSeI:Ni, BiSI:Ni 및 BiSeI:Ni 단결정의 광학적 특성에 관한 연구) (Optical Properties of Photoferroelectic Semiconductors IV.(Optical Properties of SbSI:V, SbSeI:V, BiSI:V, BiSeI:V, SbSI:Cr, SbSeI:Cr, BiSI:Cr, BiSeI:Cr, SbSI:Ni, SbSeI:Ni, BiSI:Ni and BiSeI:Ni Single Crystals))

  • 오석균;현승철;윤상현;김화택;김형곤;최성휴;윤창선;권숙일
    • 한국진공학회지
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    • 제2권2호
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    • pp.236-245
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    • 1993
  • SbSI : V, SbSeI : V, BiSI : V, BiSeI : V, SbSI : Cr, SbSeI : Cr, BiSI : Cr, BiSeI : Cr, SbSI : Ni, SbSeI : Ni, BiSI : Ni, 및 BiSeI : Ni 단결정을 고순도(99.9999%)의 성분원소에 혼합물을 투명석 영관내에 넣고, $1{\times}10^{-6}mmHg$의 진공에서 봉입하여 합성한 ingot를 사용하여, 수직 Bridgman 방법으로 성장시켰다. 성장된 단결정의 구조는 orthorhombic 구조이며, 광학적 energy band gap 구조는 간접전이형 이었고, energy gap의 온도의존성은 상전이에 관계되는 2개의 변곡점이 나타났으며, 연속된 영역에서는 Varshni 방정식을 만족하였다. 첨가한 3d 불순문(V, Cr, Ni)은 모결정의 $T_d$ 대칭을 갖는 주격자점에 +2가 ion으로 위치하며, 이들 ion의 energy 준위간의 전자전이에 의하여 불순물 광흡수 peak가 나타난다.

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Improvement of Glass Forming Ability of Ni-Zr-Ti Alloys by Addition of Si and Sn

  • Lee, Jin-Kyu;Kim, Won-Tae;Kim, Do-Hyang
    • 한국주조공학회지
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    • 제23권5호
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    • pp.286-290
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    • 2003
  • 본 연구에서는 Ni-Zr-Ti의 3원계 합금을 기본으로 하여, Si 및 Sn 등의 원소를 첨가하여 Ni-rich 영역에서 벌크 비정질 합금을 제조하였다. $Ni_{59}Zr_{20}Ti_{16}Si_2Sn_3$ 조성의 합금에서 injection casting에 의하여 약 58 K의 과냉각액상영역을 가지고 있는 직경 3 mm의 벌크 비정질 시편을 제조하였다. 이러한 우수한 비정질 형성능은 액상온도의 저하로 인해 낮은 온도까지 액상이 쉽게 과냉되기 때문인 것으로 사료된다. $Ni_{59}Zr_{20}Ti_{16}Si_5$ 합금은 두 단계에 걸쳐 결정화가 일어나는 반면, $Ni_{59}Zr_{20}Ti_{16}Si_2Sn_3$ 합금은 단일 단계에 의해 orthorhombic $Ni_{10}{(Zr,Ti)}_7$ 결정상과 cubic NiTi 결정상으로 결정화가 일어난다. 벌크 비정질 $Ni_{59}Zr_{20}Ti_{16}Si_2Sn_3$ 합금의 경우 압충강도는 2.7 GPa, 연신율은 약 2% 정도의 값을 가진다.