• Title/Summary/Keyword: Organic semiconductor display

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A Study on the Efficiency Effects of Capping Layer on the Top Emission Organic Light Emitting Diode (전면 유기발광 다이오드 기능층 캐핑레이어 적용에 따른 효율상승에 관한 연구)

  • Lee, DongWoon;Cho, Eou Sik;Jeon, Yongmin;Kwon, Sang Jik
    • Journal of the Semiconductor & Display Technology
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    • v.21 no.3
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    • pp.119-124
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    • 2022
  • Top emission organic light-emitting diode (TEOLED) is commonly used because of high efficiency and good color purity than bottom - emission organic light-emitting device (BEOLED). Unlike BEOLED, TEOLED contain semitransparent metal cathode and capping layer. Because there are many characteristics to consider just simple thickness change, optimizing organic thickness of TEOLED for microcavity is difficult. So, in this study, we optimized Device capping layer at unoptimized micro-cavity structure TEOLED device. And we compare only capping layer with unoptimized microcavity structure can overcome optimized micro-cavity structure device. We used previous our optimized micro-cavity structure to compare each other. As a result, it has been found that the efficiency can be obtained almost the same or higher only capping layer, which is stacked on top of the device and controls only the thickness and refractive index, without complicated structural calculations. This means that higher efficiencies can be obtained more easily in laboratories with limited organic materials or when optimizing new structures etc.

Effect of the Plasma-assisted Patterning of the Organic Layers on the Performance of Organic Light-emitting Diodes

  • Hong, Yong-Taek;Yang, Ji-Hoon;Kwak, Jeong-Hun;Lee, Chang-Hee
    • Journal of Information Display
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    • v.10 no.3
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    • pp.111-116
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    • 2009
  • In this paper, a plasma-assisted patterning method for the organic layers of organic light-emitting diodes (OLEDs) and its effect on the OLED performances are reported. Oxygen plasma was used to etch the organic layers, using the top electrode consisting of lithium fluoride and aluminum as an etching mask. Although the current flow at low voltages increased for the etched OLEDs, there was no significant degradation of the OLED efficiency and lifetime in comparison with the conventional OLEDs. Therefore, this method can be used to reduce the ohmic voltage drop along the common top electrodes by connecting the top electrode with highly conductive bus lines after the common organic layers on the bus lines are etched by plasma. To further analyze the current increase at low voltages, the plasma patterning effect on the OLED performance was investigated by changing the device sizes, especially in one direction, and by changing the etching depth in the vertical direction of the device. It was found that the current flow increase at low voltages was not proportional to the device sizes, indicating that the current flow increase does not come from the leakage current along the etched sides. In the etching depth experiment, the current flow at low voltages did not increase when the etching process was stopped in the middle of the hole transport layer. This means that the current flow increase at low voltages is closely related to the modification of the hole injection layer, and thus, to the modification of the interface between the hole injection layer and the bottom electrode.

ALD-based Functional Bragg Reflector Structure to Block Harmful Ultraviolet Rays that Affect the Reliability of Organic Devices (유기소자의 신뢰성에 영향을 주는 유해 자외선을 차단하기 위한 ALD기반 기능성 브래그반사경 구조)

  • Hyeun Woo Kim;Hyeong Jun Lee;Seungmi Jang;Hyeongjun Yun;Dokyun Lee;Yongmin Lee;Sangyeon Park;Jihoon Jung;Seokjun Lim;Jeong Hyun Kwon
    • Journal of the Semiconductor & Display Technology
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    • v.22 no.4
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    • pp.103-107
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    • 2023
  • To solve the reliability problem of organic devices that are often used outdoors, multifunctional gas barriers that block reactive gases such as moisture and oxygen and reflect harmful light such as ultraviolet rays are needed. In this study, ALD nanolaminate-based optically functional n-DBR was developed to overcome the poor gas permeability of polymer substrates and protect organic devices from harmful light. n-DBR not only achieved a WVTR of 8.76 × 10-6 g·m-2·day-1, but also showed a visible light transmittance of 94.3% and an ultraviolet ray blocking ability of 2.67%. In particular, n-DBR based on a nanolaminate structure maintained its permeability characteristics even in a high temperature and high humidity environment despite being used as a layer of Al2O3. This functional barrier Structure can not only be used as a functional encapsulation barrier for the reliability of organic devices, but can also be used as a tinting film for vehicles.

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Atomic Layer Deposition for Display Applications

  • Park, Jin-Seong
    • Proceedings of the Korean Vacuum Society Conference
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    • 2013.08a
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    • pp.76.1-76.1
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    • 2013
  • Atomic Layer Deposition (ALD) has remarkably developed in semiconductor and nano-structure applications since early 1990. Now, the advantages of ALD process are well-known as controlling atomic-level-thickness, manipulating atomic-level-composition control, and depositing impurity-free films uniformly. These unique properties may accelerate ALD related industries and applications in various functional thin film markets. On the other hand, one of big markets, Display industry, just starts to look at the potential to adopt ALD functional films in emerging display applications, such as transparent and flexible displays. Unlike conventional ALD process strategies (good quality films and stable precursors at high deposition processes), recently major display industries have suggested the following requirements: large area equipment, reasonable throughput, low temperature process, and cost-effective functional precursors. In this talk, it will be mentioned some demands of display industries for applying ALD processes and/or functional films, in terms of emerging display technologies. In fact, the AMOLED (active matrix organic light emitting diode) Television markets are just starting at early 2013. There are a few possibilities and needs to be developing for AMOLED, Flexible and transparent Display markets. Moreover, some basic results will be shown to specify ALD display applications, including transparent conduction oxide, oxide semiconductor, passivation and barrier films.

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Electrical Properties of Mg:Ag/tris-(8-hydroxyquinoline) Aluminum Heterointerface in Organic Light-emitting Devices

  • Choo, D.C.;Im, H.C.;Lee, D.U.;Kim, T.W.;Han, J.H.
    • 한국정보디스플레이학회:학술대회논문집
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    • 2005.07b
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    • pp.1429-1431
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    • 2005
  • Organic molecular-beam deposition of Mg:Ag thin films with a low Mg concentration on tris (8-hydroxyquinolino) aluminum $(Alq_3)$ layers at room temperature was performed to investigate the feasibility of using Mg:Ag thin films as cathode electrodes in organic light-emitting devices (OLEDs). The effective barrier height of the $Mg:Ag/Alq_3$ heterointerface, determined from current-voltage measurements, was as low as 0.23 eV. These results help improve understanding the electrical properties of the $Mg:Ag/Alq_3$ heterointerfaces in OLEDs.

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High performance organic gate dielectrics for solution processible organic and inorganic thin-film transitors

  • Ga, Jae-Won;Jang, Gwang-Seok;Lee, Mi-Hye
    • Proceedings of the Materials Research Society of Korea Conference
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    • 2012.05a
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    • pp.64.1-64.1
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    • 2012
  • Next generation displays such as high performance LCD, AMOLED, flexible display and transparent display require specific TFT back-planes. For high performance TFT back-planes, low temperature poly silicon (LTPS), and metal-oxide semiconductors are studied. Flexible TFT backplanes require low temperature processible organic semiconductors. Not only development of active semiconducting materials but also design and synthesis of semiconductor corresponding gate dielectric materials are important issues in those display back-planes. In this study, we investigate the high heat resistant polymeric gate dielectric materials for organic TFT and inorganic TFT with good insulating properties and processing chemical resistance. We also controlled and optimized surface energy and morphology of gate dielectric layers for direct printing process with solution processible organic and inorganic semiconductors.

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Fabrication of Organic Thin Film Transistor(OTFT) for Flexible Display by using Microcontact Printing Process (미세접촉프린팅공정을 이용한 플렉시블 디스플레이 유기박막구동소자 제작)

  • Kim K.Y.;Jo Jeong-Dai;Kim D.S.;Lee J.H.;Lee E.S.
    • Proceedings of the Korean Society of Precision Engineering Conference
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    • 2006.05a
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    • pp.595-596
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    • 2006
  • The flexible organic thin film transistor (OTFT) array to use as a switching device for an organic light emitting diode (OLED) was designed and fabricated in the microcontact printing and low-temperature processes. The gate, source, and drain electrode patterns of OTFT were fabricated by microcontact printing which is high-resolution lithography technology using polydimethylsiloxane(PDMS) stamp. The OTFT array with dielectric layer and organic active semiconductor layers formed at room temperature or at a temperature tower than $40^{\circ}C$. The microcontact printing process using SAM(self-assembled monolayer) and PDMS stamp made it possible to fabricate OTFT arrays with channel lengths down to even nano size, and reduced the procedure by 10 steps compared with photolithography. Since the process was done in low temperature, there was no pattern transformation and bending problem appeared. It was possible to increase close packing of molecules by SAM, to improve electric field mobility, to decrease contact resistance, and to reduce threshold voltage by using a big dielecric.

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Microplasma Current Switch for OLED applications

  • Cai, Jie-Yu;Kim, Myung-Min;Moon, Cheol-Hee;Lee, Sang-Youn;Yi, Seung-Jun
    • 한국정보디스플레이학회:학술대회논문집
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    • 2009.10a
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    • pp.854-857
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    • 2009
  • The concept of a microplasma current switch for a device operated in a current mode like organic light-emitting diodes, which features matrix addressability and current switching, is presented as well as its architecture and operational principle. To verify the concept, we have fabricated a 100 mm ${\times}$ 100 mm microplasma current switch panel with a cell pitch of $1080{\mu}m{\times}1080{\mu}m$. Moreover, the current-voltage measurements of the unit cell are performed for three different driving voltage amplitudes. They show the characteristic of an asymmetric floating double probe diagnosing plasmas.

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Ink Jet Printing of Functional Materials

  • Canisius, Johannes;Brookes, Paul;Heckmeier, Michael;James, Mark;Mueller, David;Patterson, Katie
    • 한국정보디스플레이학회:학술대회논문집
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    • 2007.08b
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    • pp.1121-1124
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    • 2007
  • Ink jet printing has been targeted as a key technology for OLED, TFT backplane and other organic semiconductor device fabrication. This presentation will concentrate on aspects of the IJ process, formulation design, jetting performance, interaction with the substrate and resultant printed device performance.

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Characterization of the High Luminance Top Emission Organic Light-emitting Devices (TEOLEDs) Using Dual Cathode Layer (이중 음극층을 이용한 고휘도 전면발광(Top emission) 유기EL소자의 특성평가)

  • Kang, Yoon-Ho;Lee, Su-Hwan;Shin, Dong-Won;Kim, Sung-Jun;Kim, Dal-Ho;Lee, Gon-Sub;Park, Jea-Gun
    • Journal of the Semiconductor & Display Technology
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    • v.5 no.3 s.16
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    • pp.23-27
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    • 2006
  • Recently, Top emission organic light-emitting diode (TEOLED) has been attracted by their potential application for the development of flat panel display (FPD). We have fabricated the high luminance top emission organic-emitting diode (TEOLED) using dual cathode layer and three top emitting structure. These devices were characterized by electroluminescence (EL) and current density-voltage (J-V) measurements. After compared it with Au anode structure, luminance of the device using dual anode was better than using without Al device. Consequently, Al layers are very good candidates for a promising electron-injecting buffer layer for top emission light-emitting diode (TEOLED).

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