• 대한전기학회:학술대회논문집
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• 대한전기학회 2009년도 제40회 하계학술대회
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• pp.1353_1354
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• 2009

The OTFT devices had inverted staggered structures of Au/pentacene/ppMMA/ITO on PET substrate. The overall device performances of the flexible devices such as the operating voltage, the field effect mobility, the on/off ratio and the off current are somewhat worse than those of devices fabricated on glass substrates. Pentacene/ppMMA OTFT benchmarks (mobility, sub-threshold slope, on/off ratio) were comparable to that of solution cast PMMA, but below average when compared to other polymer gate dielectrics. However, threshold and drive voltages were among the lowest reported for a polymer gate dielectric, and surpassed only by ultra-thin SAM gate dielectrics.

• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2007년도 7th International Meeting on Information Display 제7권2호
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• pp.1312-1314
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• 2007

The effect of gate insulator surface treatment on electrical characteristics of bottom contact (BC) and suspended source/drain (SSD) organic thinfilm transistors (OTFTs) was studied. Triisopropylsilylethynyl pentacene was used as an active material and was printed by ink-jet printing method. In case of the BC OTFTs, threshold voltage was shifted from positive to near zero, and the fieldeffect mobility was increased when the gate insulator surface was treated with hexamethyldisilazane. However, in case of SSD OTFT, threshold voltage shift was not observed and the field-effect mobility was decreased.

• 한국고분자학회:학술대회논문집
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• 한국고분자학회 2006년도 IUPAC International Symposium on Advanced Polymers for Emerging Technologies
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• pp.168-168
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• 2006

Low-operating voltage organic field-effect transistors (OFETs) have been realized with high dielectric constant (${\kappa}$) polymer such as cyanoethylated poly vinyl alcohol (CR-V, ${\kappa}=12$). Since the $high-{\kappa}$polymers are likely to contain water and ionic impurities, large hysteresis and considerable leakage current are frequently observed in OFETs. To solve these problems, we cross-linked the CR-V by using a cross-linking agent. Cross-linked CR-V dielectrics showed high dielectric constant of 11.1 and good insulating properties, resulting in a high capacitance ($81nF/cm^{2}$ at 1MHz) at 120 nm of dielectric thickness. Pentacene FETs with cross-linked CR-V dielectrics exhibited high carrier mobility ($0.72\;cm^{2}/Vs$), small subthreshold swing (185 mV/dec) and little hysteresis at low-operating voltage (${\Leq}-3V$).

• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2008년도 International Meeting on Information Display
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• pp.979-982
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• 2008

We studied hybrid passivation using parylene-C, metal, photoacyl and indium zinc oxide for pentacene OTFT to assure stability in subthreshold region. After the passivation, the changes in S and $V_{on}$ of OTFT were negligible and $I_{off}$ maintained its initial value of ${\sim}10^{-12}$ A. Therefore, the hybrid passivation is suitable for practical applications based on OTFT.

• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2009년도 9th International Meeting on Information Display
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• pp.571-574
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• 2009

Metal oxide/metal bilayer structures are explored as contacts with a low injection barrier in organic thin-film transistors (OTFTs) in an effort to realize their true potential for low-cost electronics. OTFTs with a bilayer electrode of $WO_3$ (10nm) and Al shows a saturation mobility as large as 0.97 $cm^2$/Vsec which are comparable to those of Au-based control samples (~0.90 $cm^2$/Vsec). Scaling of contact resistance with respect to the thickness of $WO_3$ layer is also discussed.

• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2007년도 7th International Meeting on Information Display 제7권1호
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• pp.871-874
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• 2007

We have synthesized a novel fully soluble and low-temperature processable polyimide gate insulator (KSPI) through one-step condensation polymerization. For the preparation of KSPI, 5- (2,5-dioxytetrahydrofuryl)-3-methly-3-cyclohexene- 1,2-dicarboxylic anhydride (DOCDA) and 4,4- diaminodiphenylmethane (MDA) were used as monomers and fully imidized KSPI was completely soluble in organic solvents like ${\gamma}-butyrolactone$ and 2-butoxyethanol, etc.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2004년도 춘계학술대회 논문집 디스플레이 광소자분야
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• pp.86-89
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• 2004

Organic thin film transistors (OTFTs) are fabricated on the plastic substrate through 4-level mask process without photolithographic patterning to yield the simple fabrication process. And we herewith report for the effect of dielectric surface modification on the electrical characteristics of OTFTs. The KIST-JM-1 as an organic molecule for the surface modification is deposited onto the surface of zirconium oxide $(ZrO_2)$ gate dielectric layer. In this work, we have examined the dependence of electrical performance on the interface surface state of gate dielectric/pentacene, which may be modified by chemical properties in the gate dielectric surface.

• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2002년도 International Meeting on Information Display
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• pp.184-187
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• 2002

In this work, the electrical characteristics of organic thin film transistors with the stacked organic gate insulators have been studied. PVP(Polyvinylphenol) and polystyrene were used as gate insulating materials. Both the high dielectric constant of PVP and better insulating capability of polystyrene were compensatorily adopted in two different stacking orders of PVP-polystyrene and polystyrene-PVP. The output characteristics of the device with the stacked gate insulator showed substantial improvement compared with those of the devices with either PVP or polystyrene gate insulator: Furthermore, these stacked organic gate insulators can differently affect the TFT characteristics with the stacking orders. The electrical properties of TFTs with organic gate insulators stacked in different orders are discussed.

• 공업화학
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• 제22권5호
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• pp.551-554
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• 2011

유기박막트랜지스터 개발의 중요한 이슈 중 하나는 용액 공정이 가능한 저전압구동용 고분자 게이트 절연체의 개발이다. 따라서 본 연구에서는 고성능의 저전압구동이 가능한 유기박막트랜지스터를 위한 우수한 성능의 고분자 게이트 절연체 재료인 poly(styrene-r-benzocyclobutene-r-methyl methacrylate) (P(S-r-BCB-r-MMA))을 합성하였다. P(S-r-BCB-r-MMA)는 경화과정에서 부피의 변화가 거의 없기 때문에 우수한 절연특성을 가지는 매우 얇은 고분자 절연체를 제조할 수 있으며, 이는 주파수에 따른 전기용량 변화를 통해 확인할 수 있다. 펜타센 유기반도체를 기반으로 한 유기박막트랜지스터 소자를 제작하였을 경우 전계효과이동도 $0.25cm^2/Vs$, 문턱전압 -2 V, 점멸비 ${\sim}10^5$, 그리고 sub-threshold swing 400 mV/decade로 우수한 성능을 보인다. 본 연구에서 새롭게 소개된 P(S-r-BCB-r-MMA)는 유연 디스플레이와 같은 미래형 전자소자의 구현을 위한 게이트 절연체 소재로서 하나의 가능성을 제공할 것이다.

• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2007년도 7th International Meeting on Information Display 제7권2호
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• pp.1216-1219
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• 2007

We have been developing printed organic TFTs for flexible displays. In this study, we have pay attention to the operation stability improvement of the organic TFTs, and studied several factors especially depending on the dielectric layers. From the detailed analysis of the effects of dielectric layers, we have proposed a new printed dielectric layer which is mainly consisting of metal oxide and gives high operation stability