• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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• 2008.05a
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• pp.727-729
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• 2008

Organic field-effort transistors (OFETs) are of interest for use in widely area electronic applications. We fabricated a copper phthalocyanine (CuPc) based field-effect transistor with different metal electrode. The CuPc FET device was made a top-contact type and the substrate temperature was room temperature. The source and drain electrodes were used an Au and Al materials. The CuPc thickness was 40nm, and the channel length was $50{\mu}m$, channel width was 3mm. We observed a typical current-voltage (I-V) characteristics in CuPc FET with different electrode materials.

• Journal of Information Display
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• v.9 no.4
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• pp.35-38
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• 2008

This paper reports the electrical characteristics of polyvinylpyrrolidone (PVPy) and the performance of organic thin-film transistors (OTFTs) with PVPy as a gate insulator. PVPy shows a dielectric constant of about 3 and contributes to the upright growth of pentacene molecules with $15.3\AA$ interplanar spacing. OTFT with PVPy exhibited a field-effect mobility of 0.23 $cm^2$/Vs in the saturation regime and a threshold voltage of -12.7 V. It is notable that there was hardly any threshold voltage shift in the gate voltage sweep direction. Based on this reliable evidence, PVPy is proposed as a new gate insulator for reliable and high-performance OTFTs.

• 한국정보디스플레이학회:학술대회논문집
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• 2008.10a
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• pp.1631-1633
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• 2008

We demonstrate 4-in QVGA active-matrix electrophoretic display based on ink-jet printed organic transistors on glass substrates. Our TFT array had a bottom-gate, bottom-contact device architecture. The organic semiconductor and gate dielectric were solution processed. The field-effect mobility of the printed devices, calculated in the saturation region, was $0.1{\sim}0.3cm^2/Vs$ at Vg=-20 V.

• 한국정보디스플레이학회:학술대회논문집
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• 2009.10a
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• pp.563-565
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• 2009

We introduce the new modification approaches of photocrosslinkable poly (4-vinylphenol) (PVP) for low hysteresis organic thin film transistors (OTFTs). The dielectric layers were composed of different PVP resin, low molecular melamine, and halogen free photo-initiator. The low hysteresis OTFT from one of the organic gate dielectrics has been realized. The electrical performance of low hysteresis OTFT with photocrosslinkable PVP exhibited a field-effect mobility of 0.2 cm2/Vs, a threshold voltage of - 0.04V, hysteresis of 0.4V.

• Bulletin of the Korean Chemical Society
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• v.34 no.5
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• pp.1355-1360
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• 2013

We have developed a new multifunctional material, 4,4',4"-tris(4-naphthalen-2-yl-phenyl)amine (2-TNPA), which can be used as a blue-emitting and hole-transporting material in organic light-emitting diodes (OLEDs), as well as a donor material in organic solar cells (OSCs) and an active material in organic thin-film transistors (OTFTs). The OLED device doped with 3% 2-TNPA shows a maximum current efficiency of 3.0 $cdA^{-1}$ and an external quantum efficiency of 3.0%. 2-TNPA is a more efficient hole-transporting material than 4,4'-bis[N-(naphthyl-N-phenylamino)]biphenyl (NPD). Furthermore, 2-TNPA shows a power-conversion efficiency of 0.39% in OSC and a field-effect mobility of $3.2{\times}10^{-4}cm^2V^{-1}s^{-1}$ in OTFTs.

• Journal of Adhesion and Interface
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• v.22 no.4
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• pp.144-152
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• 2021

Understanding charge transfer across the interface between organic semiconductor and gate insulator gives insight into the development of high-performance organic memory as well as highly stable organic field-effect transistors (OFETs). In this work, we firstly unveil a novel interfacial charge transfer mechanism, in which hole transfer from organic semiconductor to polymer insulator was nonlinearly boosted by localized states coupling. For this, OFETs based on rubrene single crystal semiconductor and Mylar gate insulator were fabricated via vacuum lamination, which allows stable repetition of lamination and delamination between semiconductor and gate insulator. The surfaces of rubrene single crystal and Mylar film were selectively degraded by photo-induced oxygen diffusion and UV-ozone treatment, respectively. Consequently, we found that the interfacial charge transfer and resultant bias-stress effect were nonlinearly boosted by coupling between localized states in rubrene and Mylar. In particular, the small number of localized states in rubrene single crystal provided fluent pathway for interfacial charge transport.

• 한국정보디스플레이학회:학술대회논문집
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• 2007.08a
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• pp.170-173
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• 2007

Cruciform conjugated molecule, 4(DP3T)-benzene bearing terthiophene moieties has been synthesized through Horner-Emmons Reaction using 5-dodecyl-5"-aldehyde-[2,2';5',2"] terthiophene as dendrons and octaethyl benzene- 1,2,4,5-tetrayltetrakis(methylene)tetraphosphonate as the core unit; this molecule has been fully characterized. The terthiophene-based molecule exhibits good solubility in common organic solvents and good self-film forming property. They are intrinsically crystalline as they exhibit well-defined X-ray diffraction patterns from uniform orientations of molecules. Thus, intermolecular interaction can be enhanced to affect the carrier transport phenomena after annealing at $148^{\circ}C$. The semiconducting property of 4(DP3T)-benzene have been evaluated in organic field-effect transistors. 4(DP3T)-benzene exhibit carrier mobility as high as $(6.6{\pm}0.5)$ ${\times}$ $10^{-6}cm^2V^{-1}s^{-1}$.

• Applied Chemistry for Engineering
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• v.23 no.3
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• pp.289-292
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• 2012

Au electrodes modified with self-assembled monolayers (SAMs) were used to control the work function of source/drain electrodes in triethylsilylethynyl anthradithiophene (TES ADT)-based organic thin film transistors (OTFTs). By using benzothiol (BT) and pentafluorobenzothiol (PFBT) SAMs, the hole injection barrier between Au and the highest occupied molecular orbital (HOMO) of TES ADT was controlled. After a solvent annealing, TES ADT OTFTs with PFBT SAM-treated Au electrodes were found to exhibit high field-effect mobilities of $0.05\;cm^2/Vs$ and on/off current ratios of $10^6$.

• Journal of Adhesion and Interface
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• v.20 no.4
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• pp.162-168
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• 2019

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2009.06a
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• pp.279-280
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• 2009

Organic field-effect transistors (OFETs) are of interest for use in widely area electronic applications. We fabricated a copper phthalocyanine (CuPc) based field-effect transistor with different metal electrode. The CuPc FET device was made a top-contact type and the substrate temperature was room temperature. The source and drain electrodes were used an Au and Al materials. The CuPc thickness was 40nm, and the channel length was $50{\mu}m$, channel width was 3mm. We observed a typical current-voltage (I-V) characteristics in CuPc FET with different electrode materials.