• JSTS:Journal of Semiconductor Technology and Science
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• v.2 no.2
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• pp.93-101
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• 2002

We have proposed and fabricated two lateral type field emission diodes, poly-Si emitter by utilizing the local oxidation of silicon (LOCOS) and GaN emitter using metal organic chemical vapor deposition (MOCVD) process. The fabricated poly-Si diode exhibited excellent electrical characteristics such as a very low turn-on voltage of 2 V and a high emission current of $300{\;}\bu\textrm{A}/tip$ at the anode-to-cathode voltage of 25 V. These superior field emission characteristics was speculated as a result of strong surface modification inducing a quasi-negative electron affinity and the increase of emitting sites due to local sharp protrusions by an appropriate activation treatment. In respect, two kinds of procedures were proposed for the fabrication of the lateral type GaN emitter: a selective etching method with electron cyclotron resonance-reactive ion etching (ECR-RIE) or a simple selective growth by utilizing $Si_3N_4$ film as a masking layer. The fabricated device using the ECR-RIE exhibited electrical characteristics such as a turn-on voltage of 35 V for $7\bu\textrm{m}$ gap and an emission current of~580 nA/l0tips at anode-to-cathode voltage of 100 V. These new field emission characteristics of GaN tips are believed to be due to a low electron affinity as well as the shorter inter-electrode distance. Compared to lateral type GaN field emission diode using ECR-RIE, re-grown GaN emitters shows sharper shape tips and shorter inter-electrode distance.

• 한국정보디스플레이학회:학술대회논문집
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• 2006.08a
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• pp.305-308
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• 2006

Advanced mobile communication devices require a bright, high information content display in a small, light-weight, low power consumption package. For portable applications flexible (or conformable) and rugged displays will be the future. In this paper we outline our progress towards developing such a low power consumption active-matrix flexible OLED $(FOLED^{TM})$ display. We demonstrate full color 100 ppi QVGA active matrix OLED displays on flexible stainless steel substrates. Our work in this area is focused on integrating three critical enabling technologies. The first technology component is based on UDC's high efficiency long-lived phosphorescent OLED $(PHOLED^{TM})$ device technology, which has now been commercially demonstrated as meeting the low power consumption performance requirements for mobile display applications. Secondly, is the development of flexible active-matrix backplanes, and for this our team are employing PARC's Excimer Laser Annealed (ELA) poly-Si TFTs formed on metal foil substrates as this approach represents an attractive alternative to fabricating poly-Si TFTs on plastic for the realization of first generation flexible active matrix OLED displays. Unlike most plastics, metal foil substrates can withstand a large thermal load and do not require a moisture and oxygen permeation barrier. Thirdly, the key to reliable operation is to ensure that the organic materials are fully encapsulated in a package designed for repetitive flexing, and in this device we employ a multilayer thin film Barix encapsulation technology in collaboration with Vitex systems. Drive electronics and mechanical packaging are provided by L3 Displays.

• JSTS:Journal of Semiconductor Technology and Science
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• v.15 no.5
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• pp.519-525
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• 2015

Positive bias stress-induced instability in amorphous indium-gallium-zinc-oxide (a-IGZO) bottom-gate thin-film transistors (TFTs) was investigated under high $V_{GS}$/low $V_{DS}$ and low $V_{GS}$/high $V_{DS}$ stress conditions through incorporating a forward/reverse $V_{GS}$ sweep and a low/high $V_{DS}$ read-out conditions. Our results showed that the electron trapping into the gate insulator dominantly occurs when high $V_{GS}$/low $V_{DS}$ stress is applied. On the other hand, when low $V_{GS}$/high $V_{DS}$ stress is applied, it was found that holes are uniformly trapped into the etch stopper and electrons are locally trapped into the gate insulator simultaneously. During a recovery after the high $V_{GS}$/low $V_{DS}$ stress, the trapped electrons were detrapped from the gate insulator. In the case of recovery after the low $V_{GS}$/high $V_{DS}$ stress, it was observed that the electrons in the gate insulator diffuse to a direction toward the source electrode and the holes were detrapped to out of the etch stopper. Also, we found that the potential profile in the a-IGZO bottom-gate TFT becomes complicatedly modulated during the positive $V_{GS}/V_{DS}$ stress and the recovery causing various threshold voltages and subthreshold swings under various read-out conditions, and this modulation needs to be fully considered in the design of oxide TFT-based active matrix organic light emitting diode display backplane.

• Transactions of the Korean Society of Mechanical Engineers A
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• v.35 no.5
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• pp.575-582
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• 2011

A cleaning blade is an attachment installed in the toner cartridge of a laser printer for removing the residual toner from an organic photo-conductive drum. There have been many studies on the performance and life of the rubber blade. We focus on optimally designing the blade shape parameters to minimize the maximum stress of the blade while satisfying design constraints on the cleaning performance and part interference. The blade is optimally designed using a design of experiments, meta-models and an optimization algorithm implemented in PIAnO (process integration, automation, and optimization), a commercial PIDO (process integration and design optimization) tool. We integrate the CAE tools necessary for the structural analysis of the cleaning blade, automate the analysis procedure, and optimize the solution using PIAnO. We decreased the maximum stress by 32.6% in comparison with that of the initial design.

• Proceedings of the IEEK Conference
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• 2001.10a
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• pp.482-488
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• 2001

Platinum group metals (pgm) are useful to many industries such as chemical, dental and medical, petroleum, refining, electrical and electronic, and automotive. Researchers at the South Dakota School of Mines and Technology and PGM Recovery Ltd. have developed jointly an environmentally sound and metallurgically efficient process for extracting these metals from secondary sources. Once these metals have been dissolved in the leach liquor, the individual metals mainly platinum, palladium, and rhodium, should be separated in order to recover the individual metals with high purity. During this investigation, solvent extraction has been chosen as the method used to achieve the separation and extraction of platinum, palladium, and rhodium from the leach liquor. There were three solutions used throughout this procedure: 1) Synthetic solution (200 ppm Pt 80 ppm Pd 20 ppm Rh; 300 ppm Pt, 180 ppm Pd 50 ppm Rh), and 2) Auto catalyst leach liquors (100 ppm Pt, 30 ppm Pd, 20 ppm Rh). The solvents investigated included Lix 84(2-hydroxy-5-nonylacetonphenone oxime in a mixture with 5-dodecylsalicyloxime), Lix 84-I, ACORGA CLX-50 (diester of pyridine 3,5 dicarboxylic acid), and di-hexyl sulfide. The extraction values achieved using ACORGA CLX-50, Lix 84, and Lix 84-I were respectively Pt (25%, 0% 0%), Pd (100%, 99.8%, 95.3%), and Rh (99.1%, 35.5%, 4.25%). The stripping processes for the Lix 84, and Lix 84-I were proven to be more involved than others. The solutions were required to be simultaneously heated and stirred. The percentages acquired through these processes yielded unsatisfactory results. The stripping procedure for the ACORGA CLX-50 was easier to execute, yet the percentage recovered from this process was also unsatisfactory. Overall the di-hexyl sulfide has proved to be the most successful organic for this procedure. The average percent extracted for palladium was excellent with 99.9% - 100% with very little Platinum and rhodium extracted. The ability of stripping palladium in ammonia solution was also found to be excellent.

• Proceedings of the KSRS Conference
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• 2008.10a
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• pp.61-64
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• 2008

Seasonal distribution of the oceanic water intrusion was investigated using satellite SST (sea surface temperature) and chl-a (chlorophyll-a) images taken by the MODIS Aqua sensor. The warm water mass emanating periodically from the meandering Kuroshio Current brings the oceanic water intrusion, known as the 'Kyucho' phenomenon, into Kagoshima bay during the winter. Satellite SST images and buoy robot data show that this warm water intrusion has the characteristics of a semigeostrophic gravity current influenced by the Coriolis effect. However, it is difficult to find the oceanic water intrusion during the summer season considering that it is accompanied by thermal stratification, and SST shows almost the same temperature between the inner side of the bay and the ocean. In this research, the satellite chl-a images taken by MODIS Aqua were employed instead of SST images to reveal the oceanic water intrusion in each season. The enclosed bay has the tendency to undergo eutrophication caused by organic materials from land and differences in chl-a concentration of the bay water and the oceanic water. As a result, distribution of low concentration chl-a with oceanic water intrusion in summer season shows almost the same pattern in winter season. On the other hand, in spring season, both SST and chl-a images are available to differentiate the oceanic water intrusion. Therefore, applying the suitable satellite sensor images for each season is effective in the monitoring of oceanic water intrusion. Moreover, in this area, SST and chl-a distribution reveal not only the oceanic water intrusion into Kagoshima bay but also the intrusion at Fukiage seashore facing East China Sea.

• Journal of IKEEE
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• v.24 no.3
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• pp.719-726
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• 2020

A threshold-voltage sensing circuit is proposed to compensate for pixel aging in active matrix organic light-emitting diodes. The proposed threshold-voltage sensing circuit consists of sample-hold (S/H) circuits and a single-ended successive approximation register (SAR) analog-to-digital converter (ADC) with a resolution of 10 bits. To remove a scale down converter of each S/H circuit and a voltage gain amplifier with a signl-to-differentail converter, the middle reference voltage calibration and input range calibration for the single-ended SAR ADC are performed in the capacitor digital-to-analog converter and reference driver. The proposed threshold-voltage sensing circuit is designed by using a 180-nm CMOS process with a supply voltage of 1.8 V. The ENOB and power consimption of the single-ended SAR ADC are 9.425 bit and 2.83 mW, respectively.

• Proceedings of the Korean Vacuum Society Conference
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• 2012.02a
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• pp.427-427
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• 2012

Ferroelectric-gate field effect transistor based memory using a nanowire as a conducting channel offers exceptional advantages over conventional memory devices, like small cell size, low-voltage operation, low power consumption, fast programming/erase speed and non-volatility. We successfully fabricated ferroelectric nonvolatile memory devices using both n-type and p-type Si nanowires coated with organic ferroelectric poly(vinylidene fluoride-trifluoroethylene) [P(VDF-TrFE)] via a low temperature fabrication process. The devices performance was carefully characterized in terms of their electrical transport, retention time and endurance test. Our p-type Si NW ferroelectric memory devices exhibit excellent memory characteristics with a large modulation in channel conductance between ON and OFF states exceeding $10^5$; long retention time of over $5{\times}10^4$ sec and high endurance of over 105 programming cycles while maintaining ON/OFF ratio higher $10^3$. This result offers a viable way to fabricate a high performance high-density nonvolatile memory device using a low temperature fabrication processing technique, which makes it suitable for flexible electronics.

• Applied Chemistry for Engineering
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• v.31 no.5
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• pp.467-474
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• 2020

Polymer solar cells have attracted extensive attention over the past decade due to their benefits, such as good solution-process-ability, light weight, low-cost, mechanically flexibility, and high efficiency. Conjugated (CPE) and non-conjugated (NPE) polyelectrolyte materials have been employed to avoid the typical weaknesses associated with conventional metal oxide interlayers. However, the application of CPEs is more complicated than that of NPEs because the synthesis procedures are complicated. NPEs containing charged ion groups can provide numerous benefits for renewable energy applications. Especially when implemented in polymer solar cells.

• Proceedings of the Korean Institute of Surface Engineering Conference
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• 2012.11a
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• pp.186-186
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• 2012

최근 Flexible organic electronics 분야에 대한 관심과 더불어 소자의 산소 및 수분의 침투를 방지하기 위한 투습방지막 연구가 활발히 진행되고 있다. 이에 본 연구에서는 Closed Drift Linear Source(CDLPS) 플라즈마 공정을 이용하여 저온 고속의 $SiO_xC_yH_z$ barrier flims 형성 연구를 진행하였다. HMDSO(hexamethyldisiloxane), TMS(trimethylsilane)와 산소를 기반으로 HMDSO/HMDSO+산소의 비율에 따라 $Si(-O_x)$ 변화에 따른 특성 평가를 진행하였다. X-ray photoelectrom spectroscopy(XPS) 및 Ft-IR spectrometer 측정 시 3.7% 비율에서 실리콘 원소가 산소 라디칼과 효율적인 반응을 함으로써 단일한 $SiO_2$ 박막이 형성됨을 확인 하였다. 그와 반면에 비율의 증가로 인해 다량의 HMDSO 물질이 주입 되었을 시 산소 라디칼과 충분히 반응 되지 못하여 $SiO_2$에 비해 $Si(CH)_x$ 가 많이 함량 된 Polymer like한 $SiO_x$가 많이 형성되었다. 박막의 증착율의 경우에는 3.7%에서 18%로 증가함에 따라 35 nm/min에서 180 nm/min의 증착율을 가지는 것을 확인 하였다. 3.7% 비율의 단일 $SiO_2$ 공정 조건으로 유기태양전지에 형성 하였을 시 소자의 에너지 변환 효율(PCE)이 변화 없는 것을 확인하였다. 이는 기존 공정에 비해 CDLPS 플라즈마 공정의 경우 유기소자에 플라즈마로 인한 열에너지나 이온 충격 에너지로 인한 영향 없는 것을 확인 할 수 있다. 이런 장점을 통해 CDSPS를 이용한 공정 기술은 다양한 유기 소자의 barrier 형성 연구에 큰 도움이 될 것이다.