• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1996.11a
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• pp.397-400
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• 1996

We investigated electric and dielectric properties of MIM device using Maleate Copolymer LB films. The thickness of maleate copolymer LB film by ellipsometry measurements and X-ray diffraction pattern was about 27~30[ ]. The maleate copolymer 13 film have the property of insulator like organic ultra-thin film. The electric conduction was Schottky current measured by I-V characteristics, and the conductivity was 10$^{-15}$ ~10$^{-14}$ [S/cm]. Dielectric constant was about 5.0~6.0 by various measurement: I-V, frequency-depenent dielectric properties. Schottky barrier was about 0.9 ~1.0(eV). By relation between log I and 1/T, activation energy baa 0.74(eV). Frequency-depenent dielectric properties wart orientational polarization by the dipole.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2004.05c
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• pp.9-13
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• 2004

In this paper, evaluation of physical properties about dielectric relaxation phenomena by the detection of the surface pressures and displacements current on the monolayer films of phospolipid monomolecular DLPC, DMPC using pressure stimulus. As a result, the changed surface pressure, displacement current and the transition forms of dipole moment of phospolipid monomolecular in area per molecular by pressure stimulus were conformed well. It was known that the monolayers by linear relationship for decision of dielectric relaxation time between compressure speed and molecule area By according to the linear relationship relation get that frictional constant, DLPC was $1.89{\times}10^{-19}$[Js] and DMPC was $0.722{\times}10^{-19}$[Js]. It is found that the phospolipid monolayer of dielectric relaxation takes a little time and depend on the molecular area.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.17 no.6
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• pp.668-672
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• 2004

Upon Debye's dielectric relaxation theory, we tried simple determination method of trap level in organic EL materials. From dielectric measurements in the 20 Hz - 1 MHz frequency range and in the 150 K - 320K temperature range, the depth of traps in Alq$_3$ filled with remaining electrons was determinated. Comparing to other determination techniques like TSL, or TL, the apparatus all we need is just simple LCR meter, thermometer and cooling method(liquid nitrogen). The mean activation energy is about 0.20 eV. It is in good agreement with previous determinations by other techniques like TSL. This results consolidate the validity of Burrow's transport mechanism model. Further intensified experiment with UV light on the dielectric absorption(Photodipolair effect) was nevertheless disturbed by the photoconductivity component.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2003.05c
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• pp.107-110
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• 2003

In this paper, We introduced that the method for determing the dielectric relaxation time $\tau$ of floating monolayers on water interface. Displacement current flowing across monolayers is analyzed using a rod-like molecular model. It is revealed that the dielectric relaxation time $\tau$of monolayers in the isotropic polar orientational phase is determined using a linear relationship between the monolayer compression speed $\alpha$ and the molecular area Am. here Displacement current gives a peak at A = Am. The dielectric relaxation time $\tau$ of organic monolayers was examined on the basis of the analysis developed here.

• Journal of Korean Society for Atmospheric Environment
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• v.25 no.2
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• pp.122-132
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• 2009

Adsorption of toluene by activated carbon fiber (ACF) coated with dielectric heating element and desorption by applying microwave were investigated. In order to prepare adsorbent so that VOC can be desorbed by microwave heating, fine dielectric heating element with nano size was coated on the surface of the ACF using hybrid binder. Eight adsorbents (ACF-DHE, Activated Carbon Fiber coated with Dielectric Heating Element) were prepared with different amount of dielectric heating element, kinds of hybrid binder, and solvent. In order to investigate adsorption characteristics, BET surface area, pore volume, and average pore size were measured for each adsorbent including ACF. Breakthrough experiments with toluene concentration, flow rate, bed length using fixed bed reactor were performed to investigate adsorbality of adsorbent, and results were compared with that of the ACF. Desorption reactor was constructed with modified microwave oven to investigate heating effect on ACF-DHE by applying microwave power. Each adsorbent saturated with toluene were put into desorption reactor. Composition of desorbed gas generated by applying controlled microwave power to reactor was measured. Up to now, hot air desorption method has been used. Experimental results showed that desorption method with new adsorbent prepared by coating dielectric heating element on ACF can be used for industrial application.

• Journal of the Microelectronics and Packaging Society
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• v.25 no.4
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• pp.53-58
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• 2018

Since the scaling-down of IC devices has been reached to their physical limitations, several innovative packaging technologies such as 3D packaging, embedded packaging, and fan-out wafer level packaging (FOWLP) are actively studied. In this study the fabrication of organic-inorganic dielectric material was evaluated for the use of multi-structured redistribution layers (RDL) in FOWLP. Compared to current organic dielectrics such as PI or PBO an organic-inorganic hybrid dielectric called polysilsesquioxane (PSSQ) can improve mechanical, thermal, and electrical stabilities. polysilsesquioxane has also an excellent advantage of simultaneous curing and patterning through UV exposure. The polysilsesquioxane samples were fabricated by spin-coating on 6-inch Si wafer followed by pre-baking and UV exposure. With the 10 minutes of UV exposure polysilsesquioxane was fully cured and showed $2{\mu}m$ line-pattern formation. And the dielectric constant of cured polysilsesquioxane dielectrics was ranged from 2.0 to 2.4. It has been demonstrated that polysilsesquioxane dielectric can be patterned and cured by UV exposure alone without a high temperature curing process.

• Journal of the Korean Vacuum Society
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• v.20 no.5
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• pp.327-332
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• 2011

Plasma polymerized styrene (ppS) thin films were prepared on ITO coated glass substrates for a MIM (metal-insulator-metal) structure with thermally evaporated Au thin film as metal contact. Also the ppS thin films were applied as organic insulator to a MIS (metal-insulatorsemiconductor) device with thermally evaporated pentacene thin film as organic semiconductor layer. After the I-V and C-V measurements with MIM and MIS structures, the ppS revealed relatively higher dielectric constant of k=3.7 than those of the conventional poly styrene and very low leakage current density of $1{\times}10^{-8}Acm^{-2}$ at electric field strength of $1MVcm^{-1}$. The MIS structure with the ppS dielectric layer showed negligible hysteresis in C-V characteristics. It would be therefore expected that the proposed ppS could be applied as a promising dielectric/insulator to organic thin film transistors, organic memory devices, and flexible organic electronic devices.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2009.11a
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• pp.158-158
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• 2009

This paper focuses on improving organic thin film transistor (OTFT) characteristics by controlling the self-organization of pentacene molecules with an alignable high-dielectric-constant film. The process, based on the growth of pentacene film through high-vacuum sublimation, is a method of self-organization using ion-beam (IB) bombardment of the $HfO_2/Al_2O_3$ surface used as the gate dielectric layer. X-ray photoelectron spectroscopy indicates that the IB raises the rate of the structural anisotropy of the $HfO_2/Al_2O_3$film, and X-ray diffraction patterns show the possibility of increasing the anisotropy to create the self-organization of pentacene molecules in the first polarized monolayer. An effective mobility of $2.3{\times}10^{-3}cm^2V^{-1}s^{-1}$ was achieved, which is significantly different from that of pentacene films that are not aligned. The proposed OTFT devices with an ultrathin $HfO_2$ structure as the gate dielectric layer were operated at a gate voltage lower than 5 V.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2000.07a
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• pp.71-74
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• 2000

Pt/Pb$TiO_3$/$SrTiO_3$/p-Si films were prepared by metallo-organic solution deposition(M0SD) method and investigated its structure and ferroelectric properties. Crystallinity of specimen as a funtions of post annealing temperature and the thickness of $SrTiO_3$(STO) buffer layer was studied using XRD and AFM. Based on C-V and P-E curve, $PbTiO_3$(PTO) capacitors showed good ferroelectric hysteresis arising from the polarization switching properties. When the thickness of ST0 buffer layer between PTO and Si substrate was 260 nrn and the post annealing temperature was $650^{\circ}C$, it was showed that production of the pyrochlore phase due to interdiffusion of Si into FTO was prevented. The dielectric constant of FTO thin films calculated from a maximum Cma in the accumulation region was 180 and the dielectric loss was 0.30 at 100 kHz frequency. The memory window in the C-V curve is 1.6V at a gate voltage of 5V.

• Proceedings of the KIEE Conference
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• 1999.07d
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• pp.1983-1985
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• 1999

The dielectric constant of a monolayer on a material surface was calculated with consideration of the local field acting on polar molecules with a permanent dipole moment, and the interaction working between the molecules and a material. It is revealed that the dielectric relaxation time r of monolayers in the isotropic polar orientational phase is determined using a linear relationship between the monolayers compression speed a and the molecular area. The dielectric relaxation time of phospholipid monolayers was examined on the basis of analysis developed here.