• Transactions on Electrical and Electronic Materials
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• v.13 no.2
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• pp.69-72
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• 2012

In this study, deposition of low-dielectric constant SiOC(H) films by conventional plasma-enhanced chemical vapor deposition (PECVD) were investigated through various characterization techniques. The results show that, with an increase in the plasma power density, the relative dielectric constant (k) of the deposited films decreases whereas the refractive index increases. This is mainly due to the incorporation of organic molecules with $CH_3$ group into the Si-O-Si cage structure. It is as confirmed by FT-IR measurements in which the absorption peak at 1,129 $cm^{-1}$ corresponding to Si-O-Si cage structure increases with power plasma density. Electrical characterization reveals that even after fast thermal annealing process, the leakage current density of the deposited films is in the order of $10^{-11}$ A/cm at 1.5 MV/cm. The reliability of the SiOC(H) film is also further characterized by using BTS test.

• Proceedings of the Korean Vacuum Society Conference
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• 2015.08a
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• pp.77.2-77.2
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• 2015

Recently, metamaterials attracted much attention because of the potential applications for superlens, cloaking and high precision sensors. We developed several dielectric metamaterials for enhancing antireflection or light trapping capability in solar energy harvesting devices. Colloidal lithography and electrochemical anodization process were employed to fabricate self-assembed nano- and microscale dielectric metamaterials in a simple and cost-effective manner. We improved broadband light absorption in c-Si, a-Si, and organic semiconductor layer by employing polystyrene (PS) islands integrated Si conical-frustum arrays, resonant PS nanosphere arrays, and diffusive alumina nanowire arrays, respectively. We also demonstrated thin metal coated alumina nanowire array which is utilized as an efficient light-to-heat conversion layer of solar steam generating devices. The scalable design and adaptable fabrication route to our light management nanostructures will be promising in applications of solar energy harvesting system. On the other hands, broadband invisible cloaks, which continuously work while elastically deforming, are developed using smart metamaterials made of photonic and elastic crystals. A self-adjustable, nearly lossless, and broadband (10-12GHz) smart meatamaterials have great potentials for applications in antenna system and military stealth technology.

• Proceedings of the Korean Vacuum Society Conference
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• 2015.08a
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• pp.162.1-162.1
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• 2015

The use of plasma has increased in bio-application field in recent years. Particularly, water treated by arc discharge or atmospheric pressure plasma has been actively utilized in bio-industry. In this study, we have developed a plasma activated water generating system. For this system, two kinds of plasma sources; dielectric barrier discharge (DBD) plasma and arc discharge plasma have been used. The discharge energy was calculated using the breakdown voltage and current, and the emission spectrum was measured to investigate the generated reactive species. We also analyzed the amount of reactive oxygen and nitrogen species in water using the chemical methods and nitric oxide sensor. Finally, the influence of plasma generated reactive species on the germination and growth of spinach (Spinacia oleracea) was investigated. Spinach is a green leafy vegetable that contains a large amount of various physiologically active organic compounds. However, it is characterized with a low seed germination rate.

• Proceedings of the Materials Research Society of Korea Conference
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• 2003.03a
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• pp.79-79
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• 2003

최근 CMOS(Complementary Metal Oxide Semiconductor) 능동소자에 사용되는 MOS-FET (Metal Oxide Semiconductror Field Effect Transitror)의 전체적인 크기 감소추세에 따라 금속 전극과 반도체 사이의 절연층 두께 감소가 요구되고 있다. 현재 보편적으로 사용되고 있는 SiO$_2$층은 두께 감소에 따른 터널링 전류의 증가로 더 이상의 두께 감소를 기대하기 어려운 상태이다. 이러한 배경에서 최근 터널링 전류를 충분히 감소시키면서 요구되는 절연특성을 얻을 수 있는 새로운 고유전 물질 (high-k dielectric material)에 대한 연구가 이루어지고 있다. 현재까지 연구되어온 고유전 물질 중, 고유전 상수, 큰 밴드갭, Si과의 열적 안정성을 갖는 물질로 ZrO$_2$가 주목을 받고 있다. 본 연구에서는 Metal Organic Molecular Beam Epitaxy (MOMBE) 방법을 이용한 ZrO$_2$ 층의 성장조건 및 특성을 평가하고자 한다.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1998.11a
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• pp.267-270
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• 1998

We measured the dielectric properties with YMnO$_3$ ceramics using solution method based procedure via by citrate. The crystalline phases were determined using XRD. Also we observed morphologies of YMnO$_3$ ceramics using SEM. We proved the structure of YMnO$_3$ ceramics which is hexagonal. But lots of pores were observed the microstructure. It would be considered as volatile organic. The maximum density of YMnO$_3$ ceramics is obtained sintering temperature 135$0^{\circ}C$ and the ratio 0.95/1.05 of Y/Mn. But even though the density we obtained is the highest, that is lower than theoretical density because of remaining organics by citric acid. Dielectric constant and dissipation factor were improved as increasing sintering temperature and the Y/Mn ratio (0.95/1.05)

• Electrical & Electronic Materials
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• v.11 no.10
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• pp.94-99
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• 1998

Suitable replacement materials for ultrathin SiO2 in deeply scaled MOSFETs such as lattice polarizable films, which have much higherpermittivities than SiO2, have bandgaps of only 3.0 to 4.0 eV. Due to these small bandgaps, the reliability of these films as a gate insulator is a serious concern. Ramped voltage, time dependent dielectric breakdown, and hot carrier effect measurements were done on 190 layers of TiO2 which were deposited through the metal-organic chemical vapor deposition of titanium tetrakis-isopropoxide (TTIP). Measurements of the high and low frequency capacitance indicate that virtually no interface state are created during constant current injection stress. The increase in leakage upon electrical stress suggests that uncharged, near-interface states may be created in the TiO2 film near the SiO2 interfacial layer that allow a tunneling current component at low bias.

• Proceedings of the Korean Society Of Semiconductor Equipment Technology
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• 2007.06a
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• pp.253-253
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• 2007

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2003.07b
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• pp.685-688
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• 2003

[ $(Ba,Sr,Ca)TiO_3$ ] powders, prepared by the sol-gel method, were mixed with an organic vehicle and the BSCT thick films were fabricated by the screen printing techniques on alumina substrates. The grain size decreased with increasing amounts of $MnO_2$, and the BSCT(50/40/10) thick film doped with 1wt% $MnO_2$ showed a value of 6.5mm. The thickness of thick films by four-cycle on printing/drying was approximately 100mm. The relative dielectric constant, dielectric loss and tunability of the BSCT(S0/40/10) thick films doped with 1.0wt% $MnO_2$ were 1296, 0.61% and 11.18%, respectively.

• Proceedings of the Korean Society of Machine Tool Engineers Conference
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• 1998.10a
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• pp.267.1-270
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• 1998

We measured the dielectric properties with YMnO$_3$ ceramics using solution method based procedure via by citrate. The crystalline phases were determined using XRD. Also we observed morphologies of YMnO$_3$ ceramics using SEM. We proved the structure of YMnO$_3$ ceramics which is hexagonal. But lots of pores were observed the microstructure. It would be considered as volatile organic. The maximum density of YMn03 ceramics is obtained sintering temperature 135$0^{\circ}C$ and the ratio 0.95/1.05 of Y/Mn. But even though the density we obtained is the highest, that is lower than theoretical density because of remaining organics by citric acid. Dielectric constant and dissipation factor were improved as increasing sintering temperature and the Y/Mn ratio (0.95/1.05)

• Journal of the Korean Society of Safety
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• v.15 no.4
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• pp.41-46
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• 2000

Silicone rubbers are elastomeric materials and organic copolymers, of which backbone is siloxane with high bonding strength. Silicone rubbers have been used as an power insulator because they are well weather proof, ozone proof and have excellent electric characteristics, thermal stability, cold resistance and low surface energy. Especially, it is known that they have very excellent characteristics at 200[$^{\circ}C$]. For this study, we made silicone rubbers as specimens and measured volume resistivity due to applied voltage and a variation of temperature 25[$^{\circ}C$] to 180[$^{\circ}C$]. Also we measured dielectric loss tangent due to applied voltage at temperature range 25[$^{\circ}C$] to 180[$^{\circ}C$] and frequency range 20[Hz] to 1${\times}10^6$[Hz].