• Journal of the Semiconductor & Display Technology
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• v.6 no.1 s.18
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• pp.1-6
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• 2007

In order to raise productivity of the OLED and realization of the OLED TV, the enlargement of the mother glass substrate is required. The large-size glass substrate has some difficulties regarding its deflection during handling operation due to its thin thickness (0.5$\sim$0.7t) which is not even enough to stand its mass itself. This paper is demonstrating a new solution of this difficult through clamping and bending boundary condition, which helps to minimize the deflection of the glass substrate. Based on the developed method, the experiments had been done for verifying the proposed method to minimize the glass-deflection. With the developed method, the new design of glass substrate handler can be proposed to allow the large OLED displays be manufactured.

• 한국정보디스플레이학회:학술대회논문집
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• 2009.10a
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• pp.854-857
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• 2009

The concept of a microplasma current switch for a device operated in a current mode like organic light-emitting diodes, which features matrix addressability and current switching, is presented as well as its architecture and operational principle. To verify the concept, we have fabricated a 100 mm ${\times}$ 100 mm microplasma current switch panel with a cell pitch of $1080{\mu}m{\times}1080{\mu}m$. Moreover, the current-voltage measurements of the unit cell are performed for three different driving voltage amplitudes. They show the characteristic of an asymmetric floating double probe diagnosing plasmas.

• Journal of the Semiconductor & Display Technology
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• v.9 no.3
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• pp.11-16
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• 2010

The performance of an OLED fabrication system strongly depends on the design of the evaporation cell-source. Therefore, necessity of the preceding study for cell source development of new concept is becoming increase. A development plan to substitute for experiment is applied as use simulation. In this study interpret behavior of a particle through DSMC techniques, and in this paper presenting a form to make so as to have better performance of the pointtype cell source which had a nozzle.

• Journal of the Semiconductor & Display Technology
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• v.4 no.2 s.11
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• pp.15-19
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• 2005

The organic light-emitting devices(OLEDs) based on fluorescence have low efficiency due to the requirement of spin-symmetry conservation. By using the phosphorescent material, the internal quantum efficiency can reach 100$\%$, compared to 25$\%$ in case of the fluorescent material [1]. Thus recently phosphorescent OLEDs have been extensively studied and showed higher internal quantum efficiency than conventional OLEDs. In this study, we have applied a new Ir complex as a red dopant and fabricated a red phosphorescent OLED on a flexible PC(Polycarbonate) substrate. Also, we have investigated the electrical and optical properties of the devices with a structure of A1/LiF/Alq3/(RD05 doped)BAlq/NPB/2-TNAIA/ITO/PC substrate. Our device showed the lightening efficiency of > 30 cd/A at an initial brightness of 1000 cd/$m^{2}$. The CIE(Commission Internationale de L'Eclairage) coordinates for the device were (0.62,0.37) at a current density of 1 mA/$cm^{2}$. In addition, although the sheet resistance of ITO films on PC substrate is higher than that on glass substrate, the flexible OLED showed much better lightening efficiency without much increase in operating voltage.

• Journal of the Semiconductor & Display Technology
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• v.15 no.1
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• pp.65-69
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• 2016

We have investigated the possibility of recycling of an organic material that is wasted during thermal evaporation. To this end, we have collected a wasted organic material (N,N'-diphenly-N,N'-bis(1,1'-biphenyl)-4,4'-diamine(NPB)) from a vacuum chamber, purified it by recrystallization, and fabricated bilayer organic light-emitting diodes (OLEDs) with the recycled NPB. It is found that the surface roughness of thin films coated with the purified NPB is much enhanced. OLEDs fabricated by thermal evaporation of the purified NPB show lower device efficiency than OLEDs with the original NPB. However, the power efficiency of OLED fabricated by spin coating of the purified NPB is comparable with that of OLED with the original NPB. Therefore, such a recycling method by recrystallization would be more suitable for solution-processed OLEDs.

• Journal of the Semiconductor & Display Technology
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• v.22 no.1
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• pp.23-27
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• 2023

Organic light-emitting diode(OLED) is very thin organic films which are hundreds of nanometers. Unlike bottom-emission OLED(BEOLED), top-emission OLED(TEOLED) emits light out the front, opaque moisture absorbents or metal foils can't be used to prevent moisture and oxygen. And it is difficult to have flexible characteristics with glass encapsulation, so thin film encapsulation which can compensate for those two disadvantages is mainly used. In this study, Al₂O₃ thin films by atomic layer deposition(ALD) were examined by changing the argon gas purge flow rate and we applied this Al₂O₃ thin films to the encapsulation of TEOLED. Ag / ITO / N,N'-Di-[(1-naphthyl)-N,N'-diphenyl]-1,1'-biphenyl-4,4'-diamine / tris-(8-hydroxyquinoline) aluminum/ LiF / Mg:Ag (1:9) were used to fabricate OLED device. The characteristics such as brightness, current density, and power efficiency are compared. And it was confirmed that with a thickness of 40 nm Al₂O₃ thin film encapsulation process did not affect OLED properties. And it was enough to maintain a proper OLED operation for about 9 hours.

• Journal of the Semiconductor & Display Technology
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• v.8 no.4
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• pp.15-19
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• 2009

A high efficient organic red light emitting device with structure of DNTPD/TAPC/$Bebq_2$ :[$(pq)_2Ir(acac)$, SFC-411]/SFC-137 was fabricated on the plastic substrate, which can be applied in the fields of flexible display and illumination. In the device structure, N,N'-diphenyl-N,N'-bis-[4-(phenyl-m-tolylamino)-phenyl]-biphenyl-4,4'-diamine[DNTPD] as a hole injection layer and 1,1-bis-(di-4-tolylaminophenyl) cyclohexane [TAPC] as a hole transport were used. Bis(10-hydroxybenzo[h]quinolinato) beryllium complex [$Bebq_2$] was used as a light emitting host material. The host material, $Bebq_2$ was doubly doped with volume ratio of 7% iridium(III)bis-(2-phenylquinoline)acetylacetonate[$(pq)_2$Ir(acac)] and 3% SFC-411[red phosphor dye coded by the proprietary company]. And then, SFC-137 was used as an electron transport layer. The luminous intensity and current efficiency of the fabricated device were $22,780\;cd/m^2$ at 9V and 17.3 cd/A under $10,000\;cd/m^2$, respectively. The maximum current efficiency of the device was 22.4cd/A under $580\;cd/m^2$.

• Proceedings of the Korean Vacuum Society Conference
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• 2012.02a
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• pp.450-450
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• 2012

In recent days, advances in ZnO-based oxide semiconductor materials have accelerated the development of thin-film transistors (TFTs), which are the building blocks for active matrix flat-panel displays including liquid crystal displays (LCD) and organic light-emitting diodes (OLED). In particular, the development of high-mobility ZnO-based channel materials has been proven invaluable; thus, there have been many reports of high-performance TFTs with oxide semiconductor channels such as ZnO, InZnO (IZO), ZnSnO (ZTO), and InGaZnO (IGZO). The reliability of oxide TFTs can be improved by examining more stable oxide channel materials. In the present study, we investigated the effects of an ALD-deposited water vapor permeation barrier on the stability of ZnO and HfZnO (HZO) thin film transistors. The device without the water vapor barrier films showed a large turn-on voltage shift under negative bias temperature stress. On the other hand, the suitably protected device with the lowest water vapor transmission rate showed a dramatically improved device performance. As the value of the water vapor transmission rate of the barrier films was decreased, the turn-on voltage instability reduced. The results suggest that water vapor related traps are strongly related to the instability of ZnO and HfZnO TFTs and that a proper combination of water vapor permeation barriers plays an important role in suppressing the device instability.

• 한국정보디스플레이학회:학술대회논문집
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• 2003.07a
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• pp.901-902
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• 2003

Three-color organic light-emitting diodes (OLEDs) of metal-semiconductor-metal (MSM) structure have been favricated by using m-MTDATA [4,4',4"-tris (3-methylphenylphenylamino) triphenylamine] as hole injection layer(HIL). The mMTDATA is shown to be an effective hole injecting material, in that the insertion of mMTDATA greatly reduces the roughness of anode surface and improves the device performance. Red, green and blue OLEDs were fabricated, and their color coordinates in CIE chromaticity were found to be (0.600, 0.389), (0.240, 0.525), and (0.171, 0.171), respectively. The luminous efficiencies of the fabricated OLEDs were 1.4 lm/W at 106 $cd/m^{2}$ for red, 1.4 lm/W at 100 $cd/m^{2}$ for green, and 2.0 lm/W at 104 $cd/m^{2}$ for blue.

• Proceedings of the Korean Vacuum Society Conference
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• 2013.02a
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• pp.634-634
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• 2013

Transfer molding methods have a problem that weak adhesion between nanostructures and substrates. It is important to make various nano scale applications, also the stability of nanostructure on substrate is related with device performance. We studied an effect of poly 4-vinylphenol (PVP) as the polymeric adhesion layer between organic nanowires and a Si substrate when the nanowires are transferred by liquid-bridge-mediated nanotransfer molding method (LB-nTM). Their structural stability was examined by optical microscopy, scanning electron microscopy as multiple transfer molding and washing process. Field-effect transistors were fabricated with organic semiconductor nanowires on a polymeric adhesion layer and their electrical properties showed no significant difference as the one without the adhesion layer. As a result, adhesion layer can be used in the washing process and making multi-layer nano-scale patterns.