• Clean Technology
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• v.30 no.1
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• pp.13-22
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• 2024

In this study, blended 6,13-Bis(triisopropylsilylethynyl)pentacene (TP):2-Decyl-7-phenyl[1]benzothieno[3,2-b][1] benzothiophene (BT):Poly styrene (PS) TFT at different ratios were explored for their potential application as light absorption sensors. Due to the mixing of BT, both off current reduction and on/off ratio improvement were achieved at the same time. In particular, the TP:BT:PS (1:0.25:1 w/w) sample showed excellent light absorption characteristics, which proved that it is possible to manufacture a high-performance light absorption device. Through analysis of the crystal structure and electrical properties of the various mixing ratios, it was confirmed that the TP:BT:PS (1:0.25:1 w/w) sample was optimal. The results of this study outline the expected effects of this innovation not only for the development of light absorption devices but also for the development of mixed organic semiconductor (OSC) optoelectronic systems. Through this study, the potential to create a multipurpose platform that overcomes the limitations of using a single OSC and the potential to fabricate a high-performance OSC TFT with a fine-tuned optical response were confirmed.

• Proceedings of the Korean Vacuum Society Conference
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• 2014.02a
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• pp.134.2-134.2
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• 2014

Photonic crystal solar cells have the potential for addressing the disparate length scales in polymer photovoltaic materials, thereby confronting the major challenge in solar cell technology: efficiency. One must achieve simultaneously an efficient absorption of photons with effective carrier extraction. Unfortunately the two processes have opposing requirements. Efficient absorption of light calls for thicker PV active layers whereas carrier transport always benefits from thinner ones, and this dichotomy is at the heart of an efficiency/cost conundrum that has kept solar energy expensive relative to fossil fuels. This dichotomy persists over the entire solar spectrum but increasingly so near a semiconductor's band edge where absorption is weak. We report a 2-D, photonic crystal morphology that enhances the efficiency of organic photovoltaic cells relative to conventional planar cells. The morphology is developed by patterning an organic photoactive bulk heterojunction blend of Poly(3-(2-methyl-2-hexylcarboxylate) thiophene-co-thiophene) and PCBM via PRINT, a nano-embossing method that lends itself to large area fabrication of nanostructures. The photonic crystal cell morphology increases photocurrents generally, and particularly through the excitation of resonant modes near the band edge of the organic PV material. The device performance of the photonic crystal cell showed a nearly doubled increase in efficiency relative to conventional planar cell designs. Photonic crystals can also enhance performance of other optoelectronic devices including organic laser.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.15 no.2
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• pp.110-118
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• 2002

Organic thin film transitors(OTFT) are of interest for use in broad area electronic applications. And recently organic electroluminescent devices(OELD) have been intensively investigated for using in full-color flat-panel display. We have fabricated inverted-staggered structure OTFTs at lower temperature using the fused-ring polycyclic aromatic hydrocarbon pentacene as the active eletronic material and photoacryl as the organic gate insulator. The field effect mobility is 0.039∼0.17 ㎠/Vs, on-off current ratio is 10$\^$6/, and threshold voltage is -7V. And here we report the study of driving emitting, Ir(ppy)$_3$, phosphorescent OELD with all organic thin film transistor and investigated its electrical characteristics. The OELD with a structure of ITO/TPD/8% Ir(ooy)$_3$ doped in BCP/BCP/Alq$_3$/Li:Al/Al and OTFT with a structure of inverted-stagged Al(gate electrode)/photoacry(gate insulator)/pentacene(p-type organic semiconductor)/ Au(source-drain electrode) were fabricated on the ITP patterned glass substrate. The electrical characteristics are turn-on voltage of -10V, and maximum luminance of about 90 cd/㎡. Device characteristics were quite different with that of only OELD.

• Proceedings of the Korean Vacuum Society Conference
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• 2012.02a
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• pp.341-341
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• 2012

Recently, oxide semi-conductor materials have been investigated as promising candidates replacing a-Si:H and poly-Si semiconductor because they have some advantages of a room-temperature process, low-cost, high performance and various applications in flexible and transparent electronics. Particularly, amorphous indium-gallium-zinc-oxide (a-IGZO) is an interesting semiconductor material for use in flexible thin film transistor (TFT) fabrication due to the high carrier mobility and low deposition temperatures. In this work, we demonstrated improvement of flexibility in IGZO TFTs, which were fabricated on polyimide (PI) substrate. At first, a thin poly-4vinyl phenol (PVP) layer was spin coated on PI substrate for making a smooth surface up to 0.3 nm, which was required to form high quality active layer. Then, Ni gate electrode of 100 nm was deposited on the bare PVP layer by e-beam evaporator using a shadow mask. The PVP and $Al_2O_3$ layers with different thicknesses were used for organic/inorganic multi gate dielectric, which were formed by spin coater and atomic layer deposition (ALD), respectively, at $200^{\circ}C$. 70 nm IGZO semiconductor layer and 70 nm Al source/drain electrodes were respectively deposited by RF magnetron sputter and thermal evaporator using shadow masks. Then, IGZO layer was annealed on a hotplate at $200^{\circ}C$ for 1 hour. Standard electrical characteristics of transistors were measured by a semiconductor parameter analyzer at room temperature in the dark and performance of devices then was also evaluated under static and dynamic mechanical deformation. The IGZO TFTs incorporating hybrid gate dielectrics showed a high flexibility compared to the device with single structural gate dielectrics. The effects of mechanical deformation on the TFT characteristics will be discussed in detail.

• Composites Research
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• v.20 no.5
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• pp.49-55
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• 2007

Nanocomposite blade for dicing semiconductor wafer is investigated for micro/nano-device and micro/nano-fabrication. While metal blade has been used for dicing of silicon wafer, polymer composite blades are used for machining of quartz wafer in semiconductor and cellular phone industry in these days. Organic-inorganic material selection is important to provide the blade with machinability, electrical conductivity, strength, ductility and wear resistance. Maintaining constant thickness with micro-dimension during shaping is one of the important technologies fer machining micro/nano fabrication. In this study the fabrication of blade by wet processing of mixing conducting nano ceramic powder, abrasive powder phenol resin and polyimide has been investigated using an experimental approach in which the thickness differential as the primary design criterion. The effect of drying conduction and post pressure are investigated. As a result wet processing techniques reveal that reliable results are achievable with improved dimension tolerance.

• Proceedings of the KIEE Conference
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• 2009.07a
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• pp.1349_1350
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• 2009

Thin films of pp(ST-Co-VA) were fabricated by plasma deposition polymerization (PVDPM) technique. Properties of the plasma polymerized pp(ST-Co-VA) thin films were investigated for application to semiconductor device as insulator. Thickness, dielectric property, composition of the pp(ST-Co-VA) thin films were investigated considering the relationship with preparation condition such as gas pressure and deposition time. In order to verify the possibility of application to organic thin film transistor, a pentacene thin film was deposited on the pp(ST-Co-VA) insulator by vacuum thermal evaporation technique. Crystalline property of the pentacene thin film was investigated by XRD and SEM, FT-IR. Surface properties at the pp(ST-Co-VA)/pentacene interface was investigated by contact angle measurement. The pp(ST-Co-VA) thin film showed a high-k (k=4.6) and good interface characteristic with pentacene semiconducting layer, which indicates that it would be a promising material for organic thin film transistor (OTFT) application.

• Journal of the Microelectronics and Packaging Society
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• v.20 no.2
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• pp.1-9
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• 2013

Recently flexible electronic devices have attracted a great deal of attention because of new application possibilities including flexible display, flexible memory, flexible solar cell and flexible sensor. In particular, development of flexible memory is essential to complete the flexible integrated systems such as flexible smart phone and wearable computer. Research of flexible memory has primarily focused on organic-based materials. However, organic flexible memory has still several disadvantages, including lower electrical performance and long-term reliability. Therefore, emerging research in flexible electronics seeks to develop flexible and stretchable technologies that offer the high performance of conventional wafer-based devices as well as superior flexibility. Development of flexible memory with inorganic silicon materials is based on the design principle that any material, in sufficiently thin form, is flexible and bendable since the bending strain is directly proportional to thickness. This article reviews progress in recent technologies for flexible memory and flexible electronics with inorganic silicon materials, including transfer printing technology, wavy or serpentine interconnection structure for reducing strain, and wafer thinning technology.

• Journal of the Semiconductor & Display Technology
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• v.6 no.1 s.18
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• pp.23-26
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• 2007

The effects of plasma treatment on the ITO/glass substrate before deposition of organic materials were investigated in the fabrication of green light emitting organic devices with $Alq_3-C545T$ fluorescent system. In our experiments, the optimum plasma treatment was obtained at the power and time of 150W and 2 minutes under the $Ar(50%)/O_2$ ambient of 1 mTorr. The green OLED with plasma treatment at 150W for 2 minutes showed the luminance and efficiency of $4700\;cd/m^2$ and 8 lm/W at 10V, respectively. On the contrary, the same structured device without plasma treatment showed much lower performance with the luminance of $2600\;cd/m^2$ and the efficiency of 3.6 lm/W at 10 V.

• Korean Journal of Materials Research
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• v.20 no.8
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• pp.401-407
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• 2010

We studied the influence of different types of metal electrodes on the performance of solution-processed zinc tin oxide (ZTO) thin-film transistors. The ZTO thin-film was obtained by spin-coating the sol-gel solution made from zinc acetate and tin acetate dissolved in 2-methoxyethanol. Various metals, Al, Au, Ag and Cu, were used to make contacts with the solution-deposited ZTO layers by selective deposition through a metal shadow mask. Contact resistance between the metal electrode and the semiconductor was obtained by a transmission line method (TLM). The device based on an Al electrode exhibited superior performance as compared to those based on other metals. Kelvin probe force microscopy (KPFM) allowed us to measure the work function of the oxide semiconductor to understand the variation of the device performance as a function of the types metal electrode. The solution-processed ZTO contained nanopores that resulted from the burnout of the organic species during the annealing. This different surface structure associated with the solution-processed ZTO gave a rise to a different work function value as compared to the vacuum-deposited counterpart. More oxygen could be adsorbed on the nanoporous solution-processed ZTO with large accessible surface areas, which increased its work function. This observation explained why the solution-processed ZTO makes an ohmic contact with the Al electrode.

• Journal of the Semiconductor & Display Technology
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• v.11 no.4
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• pp.43-48
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• 2012

The screen printing method is much used in the flat panel display field including the LCD, PDP, FED, organic EL, and etc. for forming the high precision micro-pattern. Also A number of studies of screen printing method has been conducted as the method for the cost down through the improvement of productivity. Because of being the dot printing method of the cylindrical shape not being the line printing method like the existing PDP barrier rib and phosphor, the pillar arrays using the screen printing method is deposited in the hemispherical type not being cylindrical shape in the existing printing process conditions. In this paper, the parameters were set on the screen printing device in order to deposit the cross-sectional shape with the cone or trapezoid shape of the pillar in depositing the pillars used the screen printing device for vacuum glazing. The cross-sectional shape slope of the pillar according to the parameters was measured. And analysis the effect of the screen printing process conditions on the cross-sectional shape slope of pillars based upon the result of being measured. The processing conditions were drawn to minimize the cross-sectional shape slope of pillar.