• Proceedings of the Optical Society of Korea Conference
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• 2005.07a
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• pp.204-205
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• 2005

Studies on display has been requested some major changes due to the high growth of the handheld terminal market. Therefore, the self emitting OLED(Organic Light Emitting Diode) has been interested as a next generation flat plane display because of its preeminent characteristics such as quick response characteristics, higher performance viewing angle, low power consumption, and panel floating. However, a trend of the display market is moving to three dimensional image processing instead of two dimensional flat display and various researches on display using hologram makes up for the difficulty in three dimensional display using typical flat display. In this study the Lenticular Screen Printing method is presented so that it can be applicable to organic semiconductor display devices and makes possible three dimensional display using flat display for complement the drawback of inorganic semiconductor.

• Journal of the Semiconductor & Display Technology
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• v.11 no.1
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• pp.49-54
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• 2012

There have been plenty of difficulties because properties of Alq3 are unable to acquire in a process of manufacture of OLED. In this paper it will predict a viscosity of Alq3 through DSMC technique and suggest the way regarding a study to estimate properties of material through the computer simulation. There could generate errors of a simulation process in a vacuum deposition process since the properties of material that is used in a high-degree vacuum environment are not secured. Therefore, we would like to propose the new methods that can not only predict properties of a molecular unit but also raise an accuracy of simulation process by forecasting properties of Alq3.

• Journal of the Semiconductor & Display Technology
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• v.8 no.3
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• pp.1-5
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• 2009

In this study, we have shown the power conversion efficiency of organic thin film photovoltaic devices utilizing a conjugated polymer/fullerene bulk-hetero junction structure. We use MDMO-PPV(Poly[2-methoxy-5-(3,7-dimethyloctyloxy -1,4-phenylenevinylene) as an electron donor, PCBM([6,6]-Phenyl C61 butyric acid methyl ester) as an electron accepter, and PEDOT:PSS used as a HTL(Hole Transport Layer). We have fabricated OPV(Organic Photovoltaic) devices as a function of the MDMO-PPV/PCBM concentration from 1:1 to 1:5. The electrical characteristics of the fabricated devices were investigated by means of I-V, P-V, F·F(Fill Factor) and PCE(power conversion efficiency). The power conversion efficiency was gradually increased until 1:4 ratio, also the highest efficiency of 0.4996% was obtained at the ratio.

• Journal of Information Display
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• v.9 no.3
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• pp.23-27
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• 2008

This paper reports that well-balanced white emission with three primary colors can be achieved with a simple white organic light-emitting diode (WOLED) structure of ITO / $\alpha$-NPD (50 nm) / $\alpha$-NPD: Btp2Ir(acac) (8 wt%, 6 nm) / $\alpha$-NPD (5 nm) / BCP (3 nm) / $Alq_3$: C545T (0.5 wt%, 10 nm) / $Alq_3$ (40 nm) / LiF (0.5 nm) / Al (100 nm). The external quantum efficiency of the device reached 3.8% at a current density (luminance) of 4.6 mA/$cm^2$ (310 cd/$m^2$), and the maximal luminance of the device reached 19,000 cd/$m^2$ at 11.5 V. The insignificant blue shift of the emitting color with an increasing current density can be attributed to the narrowing of the exciton formation zone width.

• Journal of Korean Society of Occupational and Environmental Hygiene
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• v.26 no.3
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• pp.301-306
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• 2016

Objectives: Direct-reading instrument(Photoionization detectors, PID) and quantitative analysis using active type air sampling (Gas chromatography-flame ionization detector, GC-FID) were tested to evaluate their ability to detect volatile organic compounds(VOCs) in a semiconductor manufacturing plant. Methods: The organic compounds used were acetone and ethanol which are normally used as cleaning solutions in the semiconductor manufacturing. The evaluation was based on the preparation of test solutions of known acetone and ethanol concentration in a chamber($600{\times}600{\times}1150mm$). Samples were prepared that would be equivalent to 5~100 ppm for acetone and 10~ 200 ppm ethanol. GC-FID and PID were evaluated simultaneously. Quantitative analysis was performed after sampling and the direct-reading instrument was checked using real-time data logging. Results: Positive correlations between PID and GC-FID were found for acetone and ethanol at 0.04~2.4% for acetone(TLV: 500 ppm) and 0.1~8.3% for ethanol(TLV: 1000 ppm). When the sampling time was 15 min, concentration of test solution was the most similar between measurement methods. However, the longer the sampling time, the less similar the results. PID and GC-FID had similar exposure patterns. Conclusions: The results indicate that PID and GC-FID have similar exposure pattern and positive correlation for detection of acetone and ethanol. Therefore, PID can be used for exposure monitoring for VOCs in the semiconductor manufacturing industry. This study has significance in that it validates measuring occupational exposure using a portable device.

• 한국정보디스플레이학회:학술대회논문집
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• 2006.08a
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• pp.647-650
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• 2006

Low temperature polycrystalline silicon (LTPS) technology using a high power laser have been widely applied to thin film transistors (TFTs) for liquid crystal, organic light emitting diode (OLED) display, driver circuit for system on glass (SOG) and static random access memory (SRAM). Recently, the semiconductor industry is continuing its quest to create even more powerful CPU and memory chips. This requires increasing of individual device speed through the continual reduction of the minimum size of device features and increasing of device density on the chip. Moreover, the flat panel display industry also need to be brighter, with richer more vivid color, wider viewing angle, have faster video capability and be more durable at lower cost. Kornic Systems Co., Ltd. developed the $KORONA^{TM}$ LTP/GLTP series - an innovative production tool for fabricating flat panel displays and semiconductor devices - to meet these growing market demands and advance the volume production capabilities of flat panel displays and semiconductor industry. The $KORONA^{TM}\;LTP/GLTP$ series using DPSS laser and XeCl excimer laser is designed for the new generation of the wafer & FPD glass annealing processing equipment combining advanced low temperature poly-silicon (LTPS) crystallization technology and object-oriented software architecture with a semistandard graphical user interface (GUI). These leading edge systems show the superior annealing ability to the conventional other method. The $KORONA^{TM}\;LTP/GLTP$ series provides technical and economical benefits of advanced annealing solution to semiconductor and FPD production performance with an exceptional level of productivity. High throughput, low cost of ownership and optimized system efficiency brings the highest yield and lowest cost per wafer/glass on the annealing market.

• 한국정보디스플레이학회:학술대회논문집
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• 2008.10a
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• pp.443-445
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• 2008

We have fabricated vertical type organic thin film transistor using $C_{60}$ as a n-type active material to improve the problems of conventional OTFTs. In general, it can be argued that the characteristics of organic transistor were influenced by carrier mobility and density. We have used several kinds of metals as source and gate electrodes to optimize the device characteristics using $C_{60}$. In addition, we have examined the feasibility of fabrication of organic light-emitting transistor (OLET) using MEH-PPV as an emission layer.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.19 no.6
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• pp.558-562
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• 2006

We have synthesized a new p-type polymer, poly(9,9'-n-dioctylfluorene-alt-phenoxazine) (PFPO), via the palladium catalyzed coupling reaction. The number average molecular weight ($M_n$) of PFPO was found to be 23,000. PFPO dissolves in common organic solvents such as chloroform and toluene. The UV-visible absorption maximum of the PFPO thin film is clearly blue-shifted with respect to that of F8T2, poly-(9,9'-n-dioctylfluorene-alt-bithiophene). The introduction of the phenoxazine moiety into the polymer system results in better field-effect transistor (FET) performance than that of F8T2. A solution processed PFPO TFT device with a top contact geometry was found to exhibit a hole mobility of $2.7{\times}10^{-4}cm^2/Vs$ and a low threshold voltage of -2 V with high on/off ratio(${\sim}10^4$).

• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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• 2016.10a
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• pp.161-163
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• 2016

Organic semiconductors, in contrast with inorganic semiconductors, have DOS of the Gaussian distribution function which leads to difficulties to obtain the electron density with a closed equation. For this reason, the prediction of the device operation is extremely difficult in the development of OLED and the repetitive trial-and-error is required to find the appropriate electrical and optical properties of the devices. In this paper, the standard to analyze organic semiconductor is proposed by the optimization of the time and the accuracy which is necessary for the numerical calculation of the electron density in organic semiconductors.

• Journal of the Semiconductor & Display Technology
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• v.7 no.3
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• pp.5-9
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• 2008

New devices with structure of ITO/2TNATA/NPB/TCTA/CBP:7%Ir(ppy)$_3$/BCP/ETL/LiF/Al were proposed to develop high luminous green phosphorescent organic light emitting diodes and their electroluminescent properties were evaluated. The experimental devices were divided into two kinds according to the material ($Alq_3$ or SFC137) used as an electron transport layer (ETL). Luminous intensities of the devices using $Alq_3$ and SFC137 as electron transport layers were 27,500 cd/$m^2$ and 51,500 cd/$m^2$ at an applied voltage of 9V, respectively. The current efficiencies of both devices were similar as 12.6 cd/A under a luminance of 10,000 cd/$m^2$, while showed slower decay in the device with SFC137 as an ETL according to the further increase of luminance. Current density and luminance of the device with SFC137 as an electron transport layer were higher at the same voltage than those of the device with $Alq_3$ as an ETL.