• Journal of Information Display
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• 제11권3호
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• pp.123-127
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• 2010

Fluorescent white organic light-emitting diodes showing high color-rendering indices (CRIs) of up to 81 was demonstrated, with a silicon-cored anthracene derivative (PATSPA) doped with DPAVBi utilized as the deep-blue host and dye materials, and the commercial dyes rubrene and DCM2 utilized as the orange- and red-light-emitting dyes. The devices, consisting of three emissive layers, showed bright-white-light emission, but the ratio of the blue peak to the orange and red peaks changed with the current density and the thickness of the blue emissive layer. A high CRI was achieved with the use of a deep-blue emitter doped in a novel host and by optimizing the blue-layer thickness. The device with a blue-layer thickness of 10 nm showed the Commission Internationale de l'Eclairage (CIE) color coordinate of (0.33, 0.35), a high CRI of 81, and a moderate external quantum efficiency of 2% at a current density of $2.5\;mA/cm^2$.

• Bulletin of the Korean Chemical Society
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• 제33권5호
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• pp.1659-1663
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• 2012

New semiconducting polymer, poly[1,4-bis(($E$)-2-(5-bromo-3-dodecylthiophen-2-yl)vinyl)benzene], was designed, synthesized and characterized. The structure of polymer was confirmed by $^1H$-NMR, IR and elemental analysis. The polymer was soluble in specific organic solvent. The weight-average molecular weights (MW) of polymer was found to be 11,000 with polydispersity of 1.82. UV-Visible absorption spectrum showed the maximum absorption at 428 nm (in solution) and 438 nm (in film). The highest occupied molecular orbital (HOMO) energy of the polymer is -5.36 eV by measuring cyclic voltammetry (CV). A solutionprocessed polymer thin film transistor device shows a mobility of $8.59{\pm}10^{-4}\;cm^2\;V^{-1}\;s^{-1}$, an on/off current ratio of $2.0{\times}10^4$.

• Bulletin of the Korean Chemical Society
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• 제34권4호
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• pp.1170-1174
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• 2013

Benzodithiophene based organic semiconducting polymer was designed and synthesized by stille coupling reaction. The structure of polymer was confirmed by NMR and IR. The weight average molecular weight ($M_w$) of polymer was 8,400 using GPC with polydispersity index of 1.4. The thermal, optical and electrochemical properties of polymer were characterized by TGA and DSC, UV-vis absorption and cyclic voltammetry. OTFT device using PBDT-10 exhibited the mobility of $7.2{\times}10^{-5}\;cm^2\;V^{-1}\;s^{-1}$ and $I_{on}/I_{off}$ of $2.41{\times}10^3$. The film morphology and crystallinity of PBDT-10, was studied using AFM and XRD.

• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2009년도 9th International Meeting on Information Display
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• pp.393-395
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• 2009

We fabricated oxide and oxide/organic hybrid TFTs on a glass substrate using the photolithography process under $200^{\circ}C$. We adopt the solution processed organic ferroelectric materials of P(VDF-TrFE) and polyimide (KSPI) insulator for 1-T structure memory and flexible device, respectively. All devices have successfully operated and showed the possibility of hybrid TFTs for the application to the flexible electronic devices.

• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2007년도 7th International Meeting on Information Display 제7권1호
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• pp.155-158
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• 2007

Printed organic thin-film transistor(OTFT) to use as a switching device for an organic light emitting diode(OLED) were fabricated in the microcontact printing and direct printing processes at room temperature. The gate electrodes($5{\mu}m$, $10{\mu}m$, and $20{\mu}m$) of OTFT was fabricated using microcontact printing process, and source/drain electrodes ($W/L=500{\mu}m/5{\mu}m$, $500{\mu}m/10{\mu}m$, and $500{\mu}m/20{\mu}m$) was fabricated using direct printing process with hard poly(dimethylsiloxane)(h-PDMS) stamp. Printed OTFT with dielectric layer was formed using special coating system and organic semiconductor layer was ink-jet printing process. Microcontact printing and direct printing processes using h-PDMS stamp made it possible to fabricate printed OTFT with channel lengths down to $5{\mu}m$, and reduced the process by 20 steps compared with photolithography. As results of measuring he transfer characteristics and output characteristics of OTFT fabricated with the printing process, the field effect characteristic was verified.

• 한국생산제조학회지
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• 제6권4호
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• pp.34-38
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• 1997

This paper presents a joining method by using the silicon wafer in order to apply to joint to the 3-dimensional structures of semiconductor device, high-speed , high integration, micro machine, silicon integrated sensor, and actuator. In this study, the high atomic beam, stabilized by oxidation film and organic materials at the material surface, is investigated, and the purified is obtained by removing the oxidation film and pollution layer at the materials. And the unstable surface is obtained, which can be easily joined. In order to use the low temperatures for the joint method, the main subjects are obtained as follows: 1) In the case of the silicon wafer and the silicon wafer and the silicon wafer of alumina sputter film, the specimens can be jointed at 2$0^{\circ}C$, and the joining strength is 5Mpa. 2) The specimens can not always be joined at the room temperatures in the case of the silicon wafer and the silicon wafer of alumina sputter film.

• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2009년도 9th International Meeting on Information Display
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• pp.67-70
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• 2009

Printed electronics are emerging technology to realize various microelectronic devices via a cost-effective method. Here we introduce high performance inkjet printed polymer field-effect transistors and application to complementary integrated circuits with p-type and n-type conjugated polymers. The performance of devices highly depends on the selection of dielectrics, printing condition and device architecture. The device optimization and performances of various integrated circuits, e.g., complementary inverters and ring oscillators will be mainly discussed in this talk.

• 접착 및 계면
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• 제21권3호
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• pp.86-92
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• 2020

본 연구에서 소스/드레인 전극이 위치하는 기판의 접촉영역과 두 전극사이 채널영역의 표면 에너지를 선택적으로 다르게 제어하여 고분자 트랜지스터의 소자성능과 전하주입 특성에 미치는 영향을 확인하였다. 채널영역의 표면에너지를 낮게 유지하면서 접촉영역의 표면에너지를 높였을 때 고분자 트랜지스터의 전하이동도는 0.063 ㎠/V·s, 접촉저항은 132.2 kΩ·cm, 그리고 문턱전압이하 스윙은 0.6 V/dec로 나타났으며, 이는 원래 소자에 비해 각각 2배와 30배 이상 개선된 결과이다. 채널길이에 따른 계면 트랩밀도를 분석한 결과, 접촉영역에서 선택적 표면처리에 의해 고분자반도체 분자의 공액중첩 방향과 전하주입 방향이 일치되면서 전하트랩 밀도가 감소한 것이 성능향상의 주요한 원인으로 확인되었다. 본 연구에서 적용한 전극과 고분자 반도체의 접촉영역에 선택적 표면처리 방법은 기존의 계면저항을 낮추는 다양한 공정과 함께 활용됨으로써 트랜지스터 성능향상을 최대화할 수 있는 가능성을 가진다.

• 반도체디스플레이기술학회지
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• 제18권4호
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• pp.69-74
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• 2019

The aim of this work is to investigate the effect of the microtip length in a slot-die head on coating of a fine poly(3,4-ethylenedioxythiophene):poly(4-styrenesulfonate) (PEDOT:PSS) stripe. To this end, we have employed a meniscus guide with a 150-㎛-wide microtip and performed roll-to-roll slot-die coatings by varying its length between 500 ㎛ and 50 ㎛. When the microtip length is 150 ㎛ or shorter, we have observed three unexpected phenomena; 1) though the solution spreads much wider than the microtip width, yet the coated stripe width is almost the same as the microtip width, 2) the stripe width decreases, but the stripe thickness is rather increased with increasing coating speed at a fixed flow rate, 3) we obtain stripes much narrower than the microtip width at high coating speeds. It is due to the fact that 1) the meniscus is not well controlled by a short microtip, 2) the main stream of solution from the outlet is very close to the substrate and thus the distributed solution along the head lip merges with the main stream, and 3) the solution is not spread over the entire microtip end at high coating speeds, causing a tiny wobble in the meniscus. Using the 150-㎛-wide and 250-㎛-long microtip, we have fabricated 153-㎛-wide and 94-nm-thick PEDOT:PSS stripe at the maximum coating speed of 13 mm/s. To demonstrate its applicability in solution-processable organic light-emitting diodes (OLEDs), we have also fabricated an OLED device with the fine PEDOT:PSS stripe and obtained strong light emission from it.

• 한국광학회지
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• 제18권1호
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• pp.50-55
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• 2007

본 연구에서는 광통신 시스템에 있어서 필수적인 기능으로 전망되고 있는 전광 논리소자를 구현하기 위한 집적된 광소자를 제작, 측정 하였다. 유기금속화학증착법(MOCVD)을 이용한 선택영역 성장기술을 이용하여 서로 다른 두 활성영역을 한 기판위에 성장함으로써 능동 반도체 광소자인 반도체 광증폭기와 수동 반도체 광소자인 다중모드 간섭 도파로, S-자 도파로를 집적하였다. 집적된 수동 소자부분의 손실을 측정하고 전광 논리소자를 구현하는 방법 중 하나인 반도체 광증폭기의 cross-gain modulation(XGM)특성을 측정하여 집적된 전광 논리소자로의 사용 가능성을 알아보았다.