• 한국정보디스플레이학회:학술대회논문집
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• 2006.08a
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• pp.529-529
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• 2006

Several laboratories worldwide have demonstrated the feasibility of producing amorphous silicon thin film transistor (TFT) arrays at temperatures that are sufficiently low to be compatible with flexible foils such as stainless steel or high temperature polyester. These arrays can be used to fabricate flexible high information content display prototypes using a variety of different display technologies. However, several questions must be addressed before this technology can be used for the economic commercial production of displays. These include process optimization and scale-up to address intrinsic electrical instabilities exhibited by these kinds of transistor device, and the development of appropriate techniques for the handling of flexible substrate materials with large coefficients of thermal expansion. The Flexible Display Center at Arizona State University was established in 2004 as a collaboration among industry, a number of Universities, and US Government research laboratories to focus on these issues. The goal of the FDC is to investigate the manufacturing of flexible TFT technology in order to accelerate the commercialization of flexible displays. This presentation will give a brief outline of the FDC's organization and capabilities, and review the status of efforts to fabricate amorphous silicon TFT arrays on flexible foils using a low temperature process. Together with industrial partners, these arrays are being integrated with cholesteric liquid crystal panels, electrophoretic inks, or organic electroluminescent devices to make flexible display prototypes. In addition to an overview of device stability issues, the presentation will include a discussion of challenges peculiar to the use of flexible substrates. A technique has been developed for temporarily bonding flexible substrates to rigid carrier plates so that they may be processed using conventional flat panel display manufacturing equipment. In addition, custom photolithographic equipment has been developed which permits the dynamic compensation of substrate distortions which accumulate at various process steps.

• 한국정보디스플레이학회:학술대회논문집
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• 2006.08a
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• pp.647-650
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• 2006

Low temperature polycrystalline silicon (LTPS) technology using a high power laser have been widely applied to thin film transistors (TFTs) for liquid crystal, organic light emitting diode (OLED) display, driver circuit for system on glass (SOG) and static random access memory (SRAM). Recently, the semiconductor industry is continuing its quest to create even more powerful CPU and memory chips. This requires increasing of individual device speed through the continual reduction of the minimum size of device features and increasing of device density on the chip. Moreover, the flat panel display industry also need to be brighter, with richer more vivid color, wider viewing angle, have faster video capability and be more durable at lower cost. Kornic Systems Co., Ltd. developed the $KORONA^{TM}$ LTP/GLTP series - an innovative production tool for fabricating flat panel displays and semiconductor devices - to meet these growing market demands and advance the volume production capabilities of flat panel displays and semiconductor industry. The $KORONA^{TM}\;LTP/GLTP$ series using DPSS laser and XeCl excimer laser is designed for the new generation of the wafer & FPD glass annealing processing equipment combining advanced low temperature poly-silicon (LTPS) crystallization technology and object-oriented software architecture with a semistandard graphical user interface (GUI). These leading edge systems show the superior annealing ability to the conventional other method. The $KORONA^{TM}\;LTP/GLTP$ series provides technical and economical benefits of advanced annealing solution to semiconductor and FPD production performance with an exceptional level of productivity. High throughput, low cost of ownership and optimized system efficiency brings the highest yield and lowest cost per wafer/glass on the annealing market.

• Journal of the Korean Chemical Society
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• v.40 no.10
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• pp.649-655
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• 1996

The chemical behaviour of Pt(Ⅱ) and Pd(Ⅱ) complexes with the organic ligand tetramethylenesulfoxide(TMSO) has been investigated by UV/vis-spectrophotometric, magnetic, and electrochemical methods. Two energy absorption bands are observed in the spectra of these complexes. The crystal field splitting energy, spin pairing energy, and bond strength were obtained from the spectra of the complexes. The electronic properties of the complexes are found to be delocalized, and low-spin state. The correlation between ligand and metals were strong bonding strength. These complexes are diamagnetics. The redox reaction processes of the complexes were investigated by cyclic voltammetry in an aprotic solvent. The redox processes of complexes turned out to be respect to one-electrton one step. These complexes were considerably diffusion and reaction controlled.

• Bulletin of the Korean Chemical Society
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• v.32 no.7
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• pp.2351-2357
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• 2011

Three new metal-organic copper(II) complexes, $[Cu(H_2PZTC)_2]_n{\cdot}2nH_2O$ (1), $[Cu(HPZTC){\cdot}2H_2O]_n{\cdot}2nH_2O$ (2), and $Cu_2[(PZHD)(OH)(H_2O)_2]_n$ (3) ($H_3PZTC$ = pyrazine-2,3,5-tricarboxylic acid, $PZHD^{3-}$ = 2-hydroxypyrazine-3,5-dicarboxylate), have been synthesized from $Cu(II)/H_3PZTC$ system under different synthetic conditions, and characterized by single-crystal X-ray diffraction, elemental analysis, IR spectroscopy and thermogravimetric analysis. In complexes 1 and 2, $H_3PZTC$ ligands loose one and two protons, which were transformed into $H_2PZTC^-$ anion and $HPZTC^{2-}$ dianion under different preparation condition, respectively. Furthermore, two ligands coordinate with Cu(II) cations in different modes, leading to the formation of the different chain structures. In complex 3, $H_3PZTC$ ligand was converted into a new ligand-PZHD by in situ decarboxylation and hydroxylation under a higher pH value than that for complexes 1 and 2. PZHD ligands link the Cu(II) cations to form a 2D layer structure. These results demonstrate that the preparation conditions, including pH value and reaction temperature etc, play an important role in the construction of complexes based on $H_3PZTC$ ligand.

• Proceedings of the Korean Vacuum Society Conference
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• 2014.02a
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• pp.367-367
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• 2014

Transparent conductive oxides (TCOs) 박막은 가시광선영역에서의 높은 투과율과 낮은 저항 특성을 동시에 갖고 있어 최근 smart windows, solar cells, liquid crystal displays (LCD), organic light emitting devices (OLED)등과 같은 최첨단 기기에 필수적인 구성요소로 활발히 사용되고 있다. 따라서, 현재까지 FTO ($SnO_2:F$), ITO ($In_2O_3:Sn$), ATO ($SnO_2:Sb$)등과 같은 다양한 TCO들이 많은 연구자들에 의해 연구되고 있다. 그 중 ITO는 우수한 전기적(${\sim}10^{-4}{\Omega}cm$) 및 광학적(~85%) 특성 때문에 현재 상업적으로 활발히 응용되고 있는 대표적인 물질이다. 하지만 ITO의 주된 구성요소인 indium은 제한적인 매장량과 과도한 소비량 때문에 원가가 비싸다는 문제점이 있다. 반면에, ATO는 우수한 전기적(${\sim}10^{-3}{\Omega}cm$) 및 광학적(~80%) 특성뿐만 아니라 구성물질들의 매장량이 풍부하여 ATO의 원가가 저렴하다는 장점을 가지고 있어 현재 ITO을 대체 할 수 물질로 관심 받고 있다 [1]. 지금까지 우수한 특성을 갖는 ATO박막을 합성하는 방법으로 sol-gel spin coating, sputtering, spray pyrolysis, chemical vapor deposition (CVD)등이 알려져 있다. 이 중에서도, sol-gel spin coating과 spray pyrolysis은 solution기반의 합성법으로 분류되며 합성과정이 간단하고 비용이 저렴하다는 장점이 있고 현재까지 많은 연구가 보고되었다. 그러나, 진공기반이 아닌 우수한 특성을 갖는 solution기반의 ATO박막을 합성하기 위해서는 새로운 합성법의 개발이 학문적으로나 산업적으로도 매우 중요한 이슈이다. 따라서, 본 연구에서는 electrospray을 활용하여 solution기반의 ATO박막을 처음으로 합성하였다. 게다가 ATO박막에 열처리온도에 따른 구조, 화학, 전기, 광학적 특성을 확인하기 위하여 X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS), Scanning Electron Microscopy (SEM), transmission electron microscopy (TEM), Hall Effect Measurement System, UV spectrophotometer를 사용하였다. 이러한 실험 결과들을 바탕으로 electrospray을 통해 합성된 solution기반의 ATO박막에 자세한 특성을 본 학회에서 다루도록 하겠다.

• Resources Recycling
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• v.21 no.3
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• pp.65-73
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• 2012

There are several kinds of displays such as liquid crystal display (LCD), cathode ray tube (CRT), plasma display panel(PDP), light emitting diode (LED), organic light emitting diode (OLED), etc. Nowadays, recycling technologies of waste displays have been widely studied from economy and efficiency points of view. In this paper, patents and literature on the recycling technologies of the waste displays have been comprehensively analyzed. The search was limited to the open patents of USA (US), European Union (EU), Japan (JP), and Korea (KR) and SCI journals published from 1980 to 2011. Patents and journals were systematically compiled and collected using key-words search and filtered by pre-set filtering criteria. The trends of the patents and journals were thus analyzed according to the years, countries, companies, and technologies.

• Journal of Korean Society of Environmental Engineers
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• v.35 no.9
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• pp.660-665
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• 2013

To find out the major cause of scale formation in digestion facility, a componential analysis of scale and a digestion experiment for food wastewater were conducted. The analysis indicated that grease in food wastewater was closely connected to the organic component of scale. It is also indicated that grease-removed food wastewater showed 58.9% level compared to unprocessed one in crystal generation quantity in this study. The experiment provided insight that grease is one of the important causes of scale formation. Additionally, pre-removal of grease from food wastewater did not show negative effect on digestion gas production, as 68.7 L-gas/kg-COD for grease-removed food wastewater and 67.7 L-gas/kg-COD for unprocessed one.

• Progress in Superconductivity
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• v.8 no.1
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• pp.75-80
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• 2006

[ $Yb_2O_3$ ] films were successfully deposited on a cube-textured Ni and(100) $SrTiO_3$(STO) single crystal substrates by metal organic chemical vapor deposition(MOCVD) method using $H_2O$ vapor as an oxidant. $H_2O$ vapor was used in order to avoid the oxidation of Ni substrate. The working pressure and Ar flow rate were 10 Ton and 600 sccm, respectively. $Yb_2O_3$ films on STO were formed at high temperatures above $900^{\circ}C$. While XRD peaks from $Yb_2O_3$ were hardly detected at $900^{\circ}C$, the $Yb_2O_3$(400) texture was developed fur the films grown at deposition temperatures above $950^{\circ}C$. The AEM surface roughness of $Yb_2O_3$ film, grown on STO, was in the range of $6{\sim}10nm$ for the film deposited at $950^{\circ}C$ with a $H_2O$ vapor partial pressure of 5.5 Ton and deposition times of 3 and 5 mins. For cube-textured Ni substrate, both $Yb_2O_3$(222) and $Yb_2O_3$ (400) textures were developed textures at deposition temperatures above $850^{\circ}C$.

• Journal of Korean Society of Water and Wastewater
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• v.22 no.6
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• pp.641-646
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• 2008

In this research, recovery of high quality organics from excess activated sludge and its potential as a external carbon sources for BNR process was studied. By simultaneous treatment of alkali and ozone, TSS concentration was reduced by 32%, and RBDCOD fraction was increased by 76.2%, and major constitute of produced organic were acetic acid and propionic acid. Also, nitrogen and phosphorus were greatly solubilized. However, because acid-hydrolyzable phosphorus(AHP) was major part of solubilized phosphorus, $NH_4{^+}-N$ and $PO_4{^3}-P$ concentration were insufficient for effective formation of crystal like as MAP(Magnesium Ammonium Phosphate) and hydroxyapatite. By placing BPR reactor before alkali-ozone treatment reactor, $PO_4{^3}-P$ concentration in pretreated sludge was increased by 1.8 times, and improved potential of phosphorus recovery by crystallization. In experiment of crystallization, hydroxyapatite formation was more easily applied than MAP. By hydroxyapatite formation, $SCOD/PO_4-P$ ratio was greatly increased from 32.7 at control to 141.9 at $Ca^{2+}/PO{_4}^{3-}-P$ mole ratio of 2.4. The results based on this study indicated that the proposed system configuration has potential to reduce the excess sludge production, to recover phosphorus in usable forms as well as utilize organics as a external carbon source in BNR process.

• Proceedings of the Korean Vacuum Society Conference
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• 2012.02a
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• pp.450-450
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• 2012

In recent days, advances in ZnO-based oxide semiconductor materials have accelerated the development of thin-film transistors (TFTs), which are the building blocks for active matrix flat-panel displays including liquid crystal displays (LCD) and organic light-emitting diodes (OLED). In particular, the development of high-mobility ZnO-based channel materials has been proven invaluable; thus, there have been many reports of high-performance TFTs with oxide semiconductor channels such as ZnO, InZnO (IZO), ZnSnO (ZTO), and InGaZnO (IGZO). The reliability of oxide TFTs can be improved by examining more stable oxide channel materials. In the present study, we investigated the effects of an ALD-deposited water vapor permeation barrier on the stability of ZnO and HfZnO (HZO) thin film transistors. The device without the water vapor barrier films showed a large turn-on voltage shift under negative bias temperature stress. On the other hand, the suitably protected device with the lowest water vapor transmission rate showed a dramatically improved device performance. As the value of the water vapor transmission rate of the barrier films was decreased, the turn-on voltage instability reduced. The results suggest that water vapor related traps are strongly related to the instability of ZnO and HfZnO TFTs and that a proper combination of water vapor permeation barriers plays an important role in suppressing the device instability.