• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2002년도 하계학술대회 논문집 Vol.3 No.2
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• pp.874-877
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• 2002

The optogalvanic signals were measured using hollow cathode discharge tube with argon as buffer gas at change of discharge currents. A change of ionization rate due to electron collision causes an increase or decrease of the electric conductivity. This change in electric conductivity generates the optogalvanic signal. We conclude that optogalvanic signal has close relation with the lowest metastable atoms density at low current.

• Journal of Korean Vacuum Science & Technology
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• 제7권1호
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• pp.18-22
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• 2003

The optogalvanic effect is proposed and demonstrated as a technique for Penning ionization in a discharge of mixtures of metal vapors and rare gases. The gadolinium and argon mixture is used as a prototype. The lowest metastable of argon, 3P$_2$ (ls$\_$5/ in Paschen notation) at 93144 cm$\^$-1/, is within kT from the excited states of Gd ion. Thus Penning ionization occurs to an excited states of the ion. This process strongly alters the optogalvanic signal and has its own signatures.

• Bulletin of the Korean Chemical Society
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• 제14권5호
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• pp.610-614
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• 1993

Laser induced impedance changes in hollow cathode lamps containing sputtered metal atoms have been employed to measure the spectroscopic properties of metal. This technique, known as optogalvanic spectroscopy, has been shown to be a powerful and inexpensive technique for the investigation of atomic and molecular species. Characteristic optogalvanic signals from hollow cathode lamps (HCL) made of different metal species and induced with a pulsed dye laser were observed, and the dependence of the optogalvanic signal on the discharge current and wavelength of laser was measured. Based on the results obtained, the mechanisms involved in evoking the optogalvanic signals were consisted of single-photon absorption, multi-photon absorption, and photoionization. Moreover the current dependence of the optogalvanic signal indicates that the optogalvanic technique could be one of the most sensitive optical methods of detecting atomic species.

• 한국진공학회지
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• 제11권2호
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• pp.119-126
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• 2002

Hollow cathode discharge(HCD)에서 알곤 기체를 완충 기체로 사용하여 전류 변화에 따른 광검류 신호를 측정하였다. 광검류 신호는 방전의 전기 전도도의 증가 또는 감소에 의해 나타나며 전기 전도도의 변화는 전자 충돌에 의한 이온화율의 변화에 의해 일어난다. 낮은 방전 전류에서 광검류 신호는 가장 낮은 준안정 준위 원자의 밀도 변화와 밀접한 관계가 있다는 결론을 얻었다.

• Transactions on Electrical and Electronic Materials
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• 제10권6호
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• pp.212-216
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• 2009

The spatial distribution of the optogalvanic (OG) signal in argon at the 801.489 nm ($1s_5-2p_8$ transition at the metastable level in Paschen notation) was investigated in the radial direction of a hollow cathode discharge tube. The results of this experiment showed that the OG signal amplitude decreases in accordance with the following two conditions; first, the level of discharge current and second, the distance from the cathode dark space. These results can be quantified by analyzing the electron density profile along the discharge regions, which can directly influence the collisional ionization induced by electron impact.

• 한국전기전자재료학회논문지
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• 제18권9호
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• pp.870-875
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• 2005

We measured the optogalvanic signal and discharge voltage-current(V-I) curve under the two different discharge conditions with different buffer gases, Ar, and Ne. When the Gd was used as a cathode material at low discharge current less than 10mA, a significant change was observed in the current-voltage curve. Time resolved optogalvanic signal measurement were measured by the diode laser of which wavelengths correspond to metastable transition line of these gases (Ar, Ne). From these measurements, we found that the characteristics of the V-I curve strongly depend on the Penning ionization process.

• 한국인쇄학회지
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• 제23권2호
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• pp.93-101
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• 2005

The measured plasma temperature of Ar hollow cathode discharge for several metal cathodes are about $620\;{\sim}\;780K$ at discharge current of $7\;{\sim}\;10mA$. The optogalvanic signals were measured using hollow cathode discharge tube with argon as buffer gas at change of discharge currents. A change of ionization rate due to electron collision causes an increase or decrease of the electric conductivity. This change in electric conductivity generates the optogalvanic signal. We conclude that optogalvanic signal has close relation with the lowest metastable atoms density at low current.

• 대한화학회지
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• 제38권1호
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• pp.34-40
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• 1994

다이오드 레이저를 optogalvanic spectroscopy에 이용하여 우라늄, 토륨 및 루비듐에 대한 전자전이 및 다이오드 레이저의 분광학적 특성을 살펴보았다. 흡수스펙트럼의 분석은 속빈 음극관내 음극표면에서 튕김에 의해 형성된 고온의 금속원자 기체를 다이오드 레이저를 이용하여 금속원자의 광흡수 현상에 따른 임피던스의 변화를 측정함으로써 수행되었다. 다이오드 레이저를 사용하여 자연산 악티늄족 원소인 토륨과 우라늄의 검출을 수행하였다. 본 실험에 이용된 optogalvanic spectroscopy에서는 Doppler효과로 인한 띠 나비에 제한이 있어 초미세 갈라짐이나 동위원소 선이동을 관찰하는데 어려움이 있었다. 하지만 루비듐 780.023 nm에서는 Doppler 띠 넓힘이 있음에도 불구하고 동위원소의 선이동과 초미세 갈라짐을 관찰할 수 있었다. 본 연구에서는 다이오드 레이저가 방사능을 지닌 악티늄족 원소들의 검출과 이들의 동위원소 존재비를 측정할 때 유용하고, 별로 알려지지 않은 란탄족 및 악티늄족의 초미세 갈라짐 상수와 같은 분광학적으로 중요한 파라미터를 구하는데에도 긴요하게 쓰일 수 있음을 고찰하였다.

• 한국진공학회지
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• 제12권1호
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• pp.51-54
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• 2003

아르곤 방전 기체의 음 글로우 영역에서 자발적 직동의 광검류 신호를 관찰하였다. 자발적 진동의 광검규 신호는 3 mA 보다 낮은 땅선 전류에서 나타난다. 준안정 준위의 인자 밀도 변화와 1s-2p 전이의 방출 세기를 동시에 측정한 결과, 자발적 진동 신호를 발생시키는 메커니즘 중의 한 가지는 느린 전자의 충돌에 의한 준안정 준위 원자의 단계적 이온화이다.

• Journal of Information Display
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• 제2권4호
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• pp.1-7
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• 2001

This paper investigates the characteristics of a newly developed high density hollow cathode plasma(HCP) system and its application for the etching of silicon wafers. We used $SF_6$ and $O_2$ gases in the HCP dry etch process. This paper demonstrates very high plasma density of $2{\times}10^{12}cm^{-3}$ at a discharge current of 20 rna, Silicon etch rate of 1.3 ${\mu}m$/min was achieved with $SF_6/O_2$ plasma conditions of total gas pressure of 50 mTorr, gas flow rate of 40 seem, and RF power of200W. This paper presents surface etching characteristics on a crystalline silicon wafer and large area cast type multicrystlline silicon wafer. We obtained field emitter tips size of less than 0.1 ${\mu}m$ without any photomask step as well as with a conventional photolithography. Our experimental results can be applied to various display systems such as thin film growth and etching for TFT-LCDs, emitter tip formations for FEDs, and bright plasma discharge for PDP applications. In this research, we studied silicon etching properties by using the hollow cathode plasma system.