• Prospectives of Industrial Chemistry
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• v.24 no.5
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• pp.1-14
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• 2021

유무기 하이브리드 금속-할라이드계 페로브스카이트(organic-inorganic metal halide perovskite) 페로브스카이트 반도체 소재는 광전자 소자와 소재 연구에 새로운 연구 흐름을 만들고 있다. 태양전지 성능이 불과 과거 몇 년 사이의 짧은 연구 기간에도 불구하고, 광-전 변환 소자 중에서도 단일 소자와 적층 소자(tandem)에서 높은 광-전 변환 효율을 나타내기 때문이다. 이러한 급격한 연구 성과와 성장에도 불구하고, 페로브스카이트 소재의 다양한 광전자 특성의 평가와 결과에 대한 논의가 필요한 상황이다. 특히 내부 이온 이동이 광전자 원거리 이동 특성 평가와 해석에 영향을 주는 경우, 페로브스카이트 소재를 기반으로 한 다양한 광전자 소자의 성능 향상과 해석에 여전히 모호함을 준다. 달리 얘기하면, 이 소재의 기초 특성을 이해하고자 적용하는 다양한 기존 특성 평가 분석법의 활용과 해석에도 복잡한 영향을 미치고 있다고 할 수 있다. 이러한 페로브스카이트 소재 내에서 광전자 원거리 이동을 측정하는 새로운 방법을 소개하고자 한다. 첫 번째 방법으로, Quasi-steady 상태에서 광전도도를 전기적 특성으로 측정하고, 광조사 하에 투과 및 반사를 광학적으로 측정하여, 전도도와 광전자 밀도를 동시에 평가하는 방법으로, photo-induced transmission and reflection (PITR) 분광분석법이다. 이 분광분석법은 실제 소자의 구동조건을 구현한 상태에서 광전자의 원거리 이동에서 발생하는 광전자 밀도 변화를 반영한 광전자 이동도 특성 평가라는 장점을 가지고 있다. 두 번째 방법으로, 기존의 연속 전압 인가 방법 대신 펄스형 전압 인가 방식을 도입하는 방법으로, pulsed voltage space charge limited current (PV-SCLC) 분석법이다. 이는 펄스형 전압 인가 방법으로 이온의 이동을 최소화하여, 전류-전압 측정에서 히스테리시스가 없고 측정결과의 재현성과 신뢰도가 매우 높은 장점이 있다.

• Journal of the Microelectronics and Packaging Society
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• v.21 no.2
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• pp.31-35
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• 2014

The thickness dependent electrical, structural, and optical properties of ZnO films grown by atomic layer deposition (ALD) at various growth temperatures were investigated. In order to deposit ZnO films, diethylzinc and deionized water were used as metal precursor and reactant, respectively. ALD process window was found at the growth temperature range from $150^{\circ}C$ to $250^{\circ}C$ with a growth rate of about $1.7{\AA}/cycle$. The electrical properties were studied by using van der Pauw method with Hall effect measurement. The structural and optical properties of ZnO films were analyzed by using X-ray diffraction, field emission scanning electron microscopy, and UV-visible spectrometry as a function of thickness values of ZnO films, which were selected by the lowest electrical resistivity. Finally, the figure of merit of ZnO films could be estimated as a function of the film thickness. As a result, this investigation of thickness dependent electrical, structural, and optical properties of ZnO films can provide proper information when applying to optoelectronic devices, such as organic light-emitting diodes and solar cells.

• Proceedings of the Korean Vacuum Society Conference
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• 2015.08a
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• pp.239.2-239.2
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• 2015

Graphene is a most interesting material due to its unique and outstanding properties. However, semi-metallic properties of graphene along with zero bandgap energy structure limit further application to optoelectronic devices. Recently, many researchers have shown that band gap can be induced in the Bernal stacked bilayer graphene. Several methods have been used for the controlled growth of the Bernal staked bilayer graphene, but it is still challenging to control the growth process. In this paper, we synthesize the large area Bernal stacked bilayer graphene using multi heating zone low pressure chemical vapor deposition (LPCVD). The synthesized bilayer graphenes are characterized by Raman spectroscopy, optical microscope (OM), scanning electron microscopy (SEM). High resolution transmission electron microscopy (HRTEM) is used for the observation of atomic resolution image of the graphene layers.

• Proceedings of the Korean Vacuum Society Conference
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• 2015.08a
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• pp.185.2-185.2
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• 2015

Tin Oxide (SnO2) has been widely investigated as a transparent conducting oxide (TCO) and can be used in optoelectronic devices such as solar cell and flat-panel displays. In addition, it would be applicable to fabricating the wide bandgap semiconductor because of its bandgap of 3.6 eV. There have been concentrated on the improvement of optical properties, such as conductivity and transparency, by doping Indium Oxide and Gallium Oxide. Recently, with development of fabrication techniques, high-qulaity SnO2 epitaxial thin films have been studied and received much attention to produce the electronic devices such as sensor and light-emitting diode. In this study, powder sputtering method was employed to deposit epitaxial thin films on sapphire (0001) substrates. A commercial SnO2 powder was sputtered. The samples were prepared with varying the growth parameters such as gas environment and film thickness. Then, the samples were characterized by using XRD, SEM, AFM, and Raman spectroscopy measurements. The details of physical properties of epitaxial SnO2 thin films will be presented.

• The Transactions of The Korean Institute of Electrical Engineers
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• v.66 no.8
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• pp.1230-1235
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• 2017

We studied surface texture-etching of glass substrate by using reactive ion etching process with various working pressure (0.7~9.0 mT). With the increase in the pressure, a haze parameter, which means diffusive transmittance/total transmittance, was increased in overall wavelength regions, as measured by spectrophotometer. Also, atomic force microscopy (AFM) study also showed that the surface topography transformed from V-shaped, keen surface to U-shaped, flattened surface, which is beneficial for nanocrystalline silicon semiconductor growth with suppressing defective crack formation. The texture-etched ZnO:Al combined with textured glass exhibited pronounced haze properties that showed 60~90 % in overall spectral wavelength regions. This promising optical properties of double textured, transparent conducting substrate can be widely applied in silicon thin film photovoltaics and other optoelectronic devices.

• The Transactions of The Korean Institute of Electrical Engineers
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• v.66 no.8
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• pp.1236-1241
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• 2017

We deposited Al-doped ZnO (ZnO:Al) thin films on glass substrates ($200mm{\times}200mm$) by using in-line magnetron sputtering system. Effects of various deposition parameters such as working pressure, deposition power and substrate temperature on optoelectronic characteristics including surface-texture etching profiles were carefully investigated in this study. We found that relatively low working pressure and high deposition power offered to obtain enhanced conductivity and optical transmittance. Haze properties showed similar trend with the transmittance. Furthermore, surface-texture etching study exhibited good morphologies when the films were deposited at $200-300^{\circ}C$. On the basis of these optimizations, we could find the deposition region that produces highly transparent and conductive properties including efficient light scattering capability.

• Journal of the Semiconductor & Display Technology
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• v.12 no.1
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• pp.41-45
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• 2013

IGZO transparent conductive thin films were widely used as transparent electrode of optoelectronic devices. We have studied the optical and electrical properties of IGZO thin films. The IGZO thin films were deposited on the corning 1737 glass by RF magnetron sputtering method. The RF power in sputtering process was varied as 25, 50, 75and 100 W, respectively. All of the thin films transmittance in the visible range was above 85%. XRD analysis showed that amorphous structure of the thin films without any peak. The thin films were electrically characterized by high mobility above $13.4cm^2/V{\cdot}s$, $7.0{\times}10^{19}cm^{-3}$ high carrier concentration and $6{\times}10^{-3}{\Omega}-cm$ low resistivity. By the studies we found that IGZO transparent thin film can be used as transparent electrodes in electronic devices.

• 한국정보디스플레이학회:학술대회논문집
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• 2005.07b
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• pp.1383-1385
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• 2005

We synthesized new poly(p -phenylene vinylene) (PPV) derivatives including different portions of crosslink that could interconnect the backbone of PPV for application in optoelectronic devices such as lightemitting-diodes, photovoltaic cells, and lasers. The fluorescence and electroluminescence properties of PPV including crosslink were discussed with respect of their structure and length of crosslink unit.

• JSTS:Journal of Semiconductor Technology and Science
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• v.6 no.2
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• pp.119-123
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• 2006

This work presents the fabrication and characteristics of $Bi_2O_3/Si$ heterojunction prepared by rapid thermal oxidation technique without any postdeposition annealing condition. The bismuth trioxide film was deposited onto monocrystalline Si and glass substrates by rapid thermal oxidation of bismuth film with aid of halogen lamp at $500^{\circ}C/\;45$ s in static air. The structural, optical and electrical properties of $Bi_2O_3$ film were investigated and compared with other published results. The structural investigation showed that the grown films are polycrystalline and multiphase (${\alpha}-Bi_2O_3$ and ${\beta}-Bi_2O_3$). Optical properties revealed that these films having direct optical band gap of 2.55 eV at 300 K with high transparency in visible and NIR regions. Dark and illuminated I-V, CV, and spectral responsivity of $Bi_2O_3/Si$ heterojunction were investigated and discussed.

• Proceedings of the Korean Vacuum Society Conference
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• 2014.02a
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• pp.99-99
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• 2014

Transparent oxide semiconductors (TOSs) are. currently attracting attention for application to transparent electrodes in optoelectronic devices and active channel layers in thin-film transistors. One of the key issues for the realization of next generation transparent electronic devices such as transparent complementary metal-oxide-semiconductor thin-film transistors (CMOS TFTs), transparent wall light, sensors, and transparent solar cell is to develop p-type TOSs. In this talks, I will introduce issues and status related to p-type TOSs such as LnCuOQ (Ln=lanthanide, Q=S, Se), $SrCu_2O_2$, $CuMO_2$ (M=Al, Ga, Cr, In), ZnO, $Cu_2O$ and SnO. The growth and properties of SnO and Cu-based oxides and their application to electronic devices will be discussed.