• 대한전자공학회:학술대회논문집
• /
• 대한전자공학회 2005년도 추계종합학술대회
• /
• pp.1265-1268
• /
• 2005

In this study, the synthesis and semiconducting properties of cation and defect-doped $KTaO_3$ film is reported. $KTaO_3$ is an important material for optoelectronic and tunable microwave applications. It is an incipient ferroelectric with a cubic structure that becomes ferroelectric when doped with Nb. While numerous studies have investigated the thin-film growth of semiconducting perovskites, little is reported about semiconducting $KTaO_3$ thin films. In this work, the films were grown on (001) MgO single crystal substrates using pulsed-laser deposition. Semiconducting behavior is achieved by inducing oxygen vacancies in the $KTaO_3$ lattice via growth in a hydrogen atmosphere. The resistivity of semiconducting $KTaO_3:Ca$ films was as low as 10cm, and n-type semiconducting behavior was indicated. Hall mobility and carrier concentration were $0.27cm^2/Vs$ and $3.21018cm^{-3}$, respectively. Crystallinity and microstructure of the $KTaO_3:Ca$ films were examined using X-ray diffraction and field-emission scanning microscopy.

• 마이크로전자및패키징학회지
• /
• 제27권1호
• /
• pp.9-15
• /
• 2020

The 'field-effect' underlies the operation of most conventional electronic devices. However, effective control and implementation of the field-effect in semiconductor devices are limited due to screening of the electric-field by conducting electrodes. Thus far, the electronic devices have necessarily been designed to avoid or minimize the electric-field screening effect. As an alternative approach to this, a new type of conducting electrodes which would be transparent to both visible light and electric-field while being electrically conductive have been developed. Here, we define these electrodes as 'electric-field transparent electrodes' and provide a review on related work. Particular attention is paid to the material selection and design strategies to enhance the electric-field transparency of the electrodes while maintaining good electrical conductivity and optical transparency. We then introduce potential applications of the electric-field transparent electrodes in electronic and optoelectronic devices.

• 한국진공학회:학술대회논문집
• /
• 한국진공학회 2016년도 제50회 동계 정기학술대회 초록집
• /
• pp.163.1-163.1
• /
• 2016

Lead halide perovskites CH3NH3PbX3 (X=Cl, Br, I) have received great interest in the past few years because of their excellent photoelectronic properties as well as their low-cost solution process. Their theoretical efficiency limit of the solar cell devices was predicted around 31% by a detailed balance model for the reason that exceptional light-harvesting and superior carrier transport properties. Additionally, these excellent properties contribute to the applications of optoelectronic devices such as LASERs, LEDs, and photodetectors. Since these devices are mainly using perovskite thin film, one of the most important factor to decide the efficiency of these applications is the quality of the film. Even though, optoelectrical devices are composed of polycrystalline thin film in general, not a single crystalline form which has longer carrier diffusion length and lower trap density. For these reasons, monodomain perovskite thin films have potential to elicit an optimized device efficiency. In this study, we analyzed the crystallography of the in-plane aligned perovskite thin film by X-ray diffraction (XRD) and selected area electron diffraction (SAED). Also the basic optic properties of perovskites were checked using scanning electron microscopy (SEM) and UV-Vis spectrum. From this work, the perovskite which is aligned in all directions both of out-of-plane and in-plane was fabricated and analyzed.

• 한국진공학회:학술대회논문집
• /
• 한국진공학회 2016년도 제50회 동계 정기학술대회 초록집
• /
• pp.363.1-363.1
• /
• 2016

Transparent and stretchable conductors are expected to be an essential component in future stretchable optoelectronic devices. Until now, two main methods have been commonly employed to fabricate transparent and stretchable conductors by using metal nanomaterials: creating buckling configurations and creating network configurations. In this report, a novel strategy for obtaining transparent and stretchable conductors is presented, one that employs these two main approaches simultaneously. To the best of our knowledge, this proposed configuration of a buckled long nanofiber network in this study has not yet been reported. In order to provide the transparent conductors with dual mode stretchability originating from simultaneous buckled and network configurations, a buckled Au@polyvinylpyrrolidone (PVP) nanofiber network (hereafter referred to BANN for convenience) was fabricated by transferring Au-metallized electrospun PVP nanofibers onto a prestrained polydimethylsiloxane (PDMS) substrate. Our BANN shows considerably lower strain sensitivity of resistance than that of straight Au@PVP nanofiber network. Durability tests conducted by performing cyclic tensile strain reveal that the relative change in resistance of BANN (prestrain = 20%) is quite small after 1000 cycles. We also demonstrate that this BANN exhibits superior performance over widely used indium tin oxide conductors with regard to high optical transmittance and low sheet resistance.

• 한국진공학회:학술대회논문집
• /
• 한국진공학회 2016년도 제50회 동계 정기학술대회 초록집
• /
• pp.352.2-352.2
• /
• 2016

In recent times, much effort has been concentrated on trivalent rare-earth ions activated ceramics or oxide phosphors to develop display industries due to their promising applications in optoelectronic devices and field-emission displays. To prepare efficient phosphors, citrate sol-gel method is one of the best synthetic methods. Green and blue emissive CaLa2ZnO5:RE3+ nanocrystalline materials are synthesized by a citrate sol-gel method. After the samples annealing at $1100^{\circ}C$, morphological and structural properties are investigated by scanning electron microscope images and X-ray diffraction patterns, respectively. At low electron beam voltage of <5 kV, the visible photoluminescence properties are obtained. Various concentrations of the RE3+ ions exhibited their characteristic emission peaks at different excitation wavelengths, respectively. Similarly, at high electron beam anodic voltage, the cathodoluminescence properties are studied as a function of acceleration voltage and filament current. The chromaticity coordinates are calculated for the optimized CaLa2ZnO5 nanocrystalline luminescent materials.

• 한국진공학회:학술대회논문집
• /
• 한국진공학회 2016년도 제50회 동계 정기학술대회 초록집
• /
• pp.151.2-151.2
• /
• 2016

We characterized the n-type organic field-effect transistors (OFETs) with non-conjugated polyelectrolytes (NPEs) interlayers as the electron injection layer. Novel NPEs with various ions (Cl-, Br-, I-) improved the electron mobility from $5.06{\times}10^{-3}$ to $2.10{\times}10^{-2}cm^2V^{-1}s^{-1}$ in OFETs based [6,6]-Phenyl-$C_{61}$-butyric acid methyl ester (PCBM) when $PEIEH^+I^-$ spin-cast from 0.6% solution was deposited onto the PCBM layer. Reduced electron injection barrier (${\phi}_e$) at NPE/metal electrode interface was induced by dipole formation and led to increase the electron injection and transport. These findings are important for understanding how NPEs function in devices, the improvement of device performance, and the design of new materials for use in optoelectronic devices.

• 한국진공학회:학술대회논문집
• /
• 한국진공학회 2016년도 제50회 동계 정기학술대회 초록집
• /
• pp.282.1-282.1
• /
• 2016

The remarkable physical properties of two-dimensional (2D) semiconducting materials such as molybdenum disulfide ($MoS_2$) and tungsten disulfide ($WS_2$) etc. have attracted considerable attentions for future high-performance electronic and optoelectronic devices. The ongoing studies of $MoS_2$ based nonvolatile memories have been demonstrated by worldwide researchers. The opening hysteresis in transfer characteristics have been revealed by different charge confining layer, for instance, few-layer graphene, $MoS_2$, metallic nanocrystal, hafnium oxide, and guanine. However, limited works built their nonvolatile memories using entirely of assembled 2D crystals. This is important in aspect view of large-scale manufacture and vertical integration for future memory device engineering. We report $WS_2$ based nonvolatile memories utilizing functional van der Waals heterostructure in which multi-layered graphene is encapsulated between $SiO_2$ and hexagonal boron nitride (hBN). We experimentally observed that, large memory window (20 V) allows to reveal high on-/off-state ratio (>$10^3$). Moreover, the devices manifest perfect retention of 13% charge loss after 10 years due to large graphene/hBN barrier height. Interestingly, the performance of our memories is drastically better than ever published work related to $MoS_2$ and black phosphorus flash memory technology.

• 한국진공학회:학술대회논문집
• /
• 한국진공학회 2016년도 제50회 동계 정기학술대회 초록집
• /
• pp.267.2-267.2
• /
• 2016

Semiconductor photo-catalysis offers the potential for complete removal of toxic chemicals through its effective and broad potential applications. Various new compounds and materials for chemical catalysts were synthesized in the past few decades. As one of the most important II-VI group semiconductors, zinc sulfide (ZnS) with a wide direct band gap of 3.8 eV has been extensively investigated and used as a catalyst in photochemistry, environmental protection and in optoelectronic devices. In this work, the ZnS films and nanostructures have been successfully prepared by wet chemical method. We show that the agglomerates with four successive scales are always observed in the case of the homogeneous precipitation of zinc sulfide. Hydrodynamics plays a crucial role to determine the size of the largest agglomerates; however, other factors should be invoked to interpret the complete structure. In addition, studies of the photocatalytic properties by exposure to UV light irradiation demonstrated that ZnS nanocrystals (NCs) are good photo-catalysts as a result of the rapid generation of electron-hole pairs by photo-excitation and the highly negative reduction potentials of excited electrons. A combination of their unique features of high surface-to volume ratios, carrier dynamics and rich photo-catalytic suggests that these ZnS NCs will find many interesting applications in semiconductor photo-catalysis, solar cells, environmental remediation, and nano-devices.

• 한국진공학회:학술대회논문집
• /
• 한국진공학회 2015년도 제49회 하계 정기학술대회 초록집
• /
• pp.203-203
• /
• 2015

Gallium Oxide (Ga2O3) has been widely investigated for the optoelectronic applications due to its wide bandgap and the optical transparency. Recently, with the development of fabrication techniques in nanometer scale semiconductor materials, there have been an increasing number of extensive reports on the synthesis and characterization of Ga2O3 nano-structures such as nano-wires, nano-belts, and nano-dots. In contrast to typical vapor-liquid-solid growth mode with metal catalysts to synthesis 1-dimensional nano-wires, there are several difficulties in fabricating the nano-structures by using sputtering techniques. This is attributed to the fact that relatively low growth temperatures and higher growth rate compared with chemical vapor deposition method. In this study, Ga2O3 nanowires (NWs) were synthesized by using radio-frequency magnetron sputtering method. The NWs were then coated by Au thin films and annealed under Ar or N2 gas enviroment with no supply of Gallium and Oxygen source. Several samples were prepared with varying the post annealing parameters such as gas environment annealing time, annealing temperature. Samples were characterized by using XRD, SEM, and PL measurements. In this presentation, the details of fabrication process and physical properties of branched Ga2O3 NWs will be reported.

• 한국염색가공학회:학술대회논문집
• /
• 한국염색가공학회 2011년도 제44차 학술발표회
• /
• pp.63-63
• /
• 2011

The donor-${\pi}$-acceptor (D-${\pi}$-A) chromophoric dye system has received great attention in variety fields such as electroluminescent materials, sensors and optoelectronic devices. There are many research activities focused on the development for abovementioned application materials with the high-performance properties. In the previous work, we are reported that novel D-${\pi}$-A dye, 2-[4-(9H-carbazol-9-yl)benzylidene]-2,3-dihydroinden-1-one, is successfully attained and exhibited a positive fluorescence solvatochromism. In this work, the molecular structure and packing geometry of 2-[4-(9H-carbazol-9-yl)benzylidene]-2,3-dihydroinden-1-one was discussed by their conformational structure. Their single yellow prism crystal having approximate dimensions of $0.30{\times}0.10{\times}0.10$ mm was carried out with a Rigaku RAXIS RAPID imaging plate area detector with graphite monochromated $CuK_{\alpha}$ radiation. Their crystal structure were solved by using the CrystalStructure crystallographic software package.