• Proceedings of the Korean Vacuum Society Conference
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• 2012.02a
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• pp.207-207
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• 2012

Si quantum dot (QD) imbedded in a $SiO_2$ matrix is a promising material for the next generation optoelectronic devices, such as solar cells and light emission diodes (LEDs). However, low conductivity of the Si quantum dot layer is a great hindrance for the performance of the Si QD-based optoelectronic devices. The effective doping of the Si QDs by semiconducting elements is one of the most important factors for the improvement of conductivity. High dielectric constant of the matrix material $SiO_2$ is an additional source of the low conductivity. Active doping of B was observed in nanometer silicon layers confined in $SiO_2$ layers by secondary ion mass spectrometry (SIMS) depth profiling analysis and confirmed by Hall effect measurements. The uniformly distributed boron atoms in the B-doped silicon layers of $[SiO_2(8nm)/B-doped\;Si(10nm)]_5$ films turned out to be segregated into the $Si/SiO_2$ interfaces and the Si bulk, forming a distinct bimodal distribution by annealing at high temperature. B atoms in the Si layers were found to preferentially substitute inactive three-fold Si atoms in the grain boundaries and then substitute the four-fold Si atoms to achieve electrically active doping. As a result, active doping of B is initiated at high doping concentrations above $1.1{\times}10^{20}atoms/cm^3$ and high active doping of $3{\times}10^{20}atoms/cm^3$ could be achieved. The active doping in ultra-thin Si layers were implemented to silicon quantum dots (QDs) to realize a Si QD solar cell. A high energy conversion efficiency of 13.4% was realized from a p-type Si QD solar cell with B concentration of $4{\times}1^{20}atoms/cm^3$. We will present the diffusion behaviors of the various dopants in silicon nanostructures and the performance of the Si quantum dot solar cell with the optimized structures.

• Korean Journal of Materials Research
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• v.30 no.1
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• pp.1-7
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• 2020

Doping or incorporation with exotic elements are two manners to regulate the optoelectronic properties of transparent conducting (TCO) cadmium oxide (CdO). Nevertheless, the method of doping host CdO by CdTe semiconductor is of high importance. The structural, optical, and electrical properties of CdTe-doped CdO films are studied for the sake of promoting their conducting parameters (CPs), including their conductivity, carrier concentration, and carrier mobility, along with transparency in the NIR spectral region; these are then compared with the influence of doping the host CdO by pure Te ions. X-ray fluorescence (XRF), X-ray diffraction (XRD), optical absorption spectroscopy, and electrical measurements are used to characterise the deposited films prepared by thermal evaporation. Numerous results are presented and discussed in this work; among these results, the optical properties are studied through a merging of concurrent BGN (redshift) and BGW (blue shift) effects as a consequence of doping processes. The impact of hydrogenation on the characterisations of the prepared films is investigated; it has no qualitative effect on the crystalline structure. However, it is found that TCO-CPs are improved by the process of CdTe doping followed by hydrogenation. The utmost TCO-CP improvements are found with host CdO film including ~ 1 %Te, in which the resistivity decreases by ~ 750 %, carrier concentration increases by 355 %, and mobility increases by ~ 90 % due to the increase of N_carr. The improvement of TCO-CPs by hydrogenation is attributed to the creation of O-vacancies because of H₂ molecule dissociation in the presence of Te ions. These results reflect the potential of using semiconductor CdTe -doped CdO thin films in TCO applications. Nevertheless, improvements of the host CdO CPs with CdTe dopant are of a lesser degree compared with the case of doping the host CdO with pure Te ions.

• Proceedings of the Korean Vacuum Society Conference
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• 2013.02a
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• pp.461-461
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• 2013

Over the last decade, zinc oxide (ZnO) thin films have attracted considerable attention owing to large band gap of 3.37 eV and large exciton binding energy of 60 meV at room temperature [1-3]. Recent interest in ZnO related researches has been switched into the fabrication and characterization of low-dimensional nanostructures, such as nano-wires and nano-dots that can be applicable to manufacture the optoelectronic devices such as ultraviolet lasers, light-emitting-diodes and detectors. Since the optical properties of ZnO nano-structures might be distinct from those of bulk materials or thin films, the low-dimensional phenomena should be examined further. In order to utilize such advanced optoelectronic devices, one of the challenges is how to control the surface state related emissions that are drastically increased with increasing the density of the nano-structures and the surface-to-volume ratio. This paper reports the synthesis and characterization of self-assembled ZnO hexagonal nano-disks grown by radio-frequency magnetron sputtering. X-ray diffraction data and scanning electron microscopy data showed that ZnO hexagonal nano-disks were nucleated on top of the flat surfaces as the film thickness reached to 1.56 ${\mu}m$ and then the number of nano-disks increased with increasing the film thickness. The lateral size of hexagonal nano-disks was ~720 nm and height was ~74 nm. The strong photo luminescence spectra obtained at 10 K was also observed, which was assigned to a surface exciton emission at 3.3628 eV arising from the surface sites of hexagonal nano-disks.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.22 no.5
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• pp.390-396
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• 2009

The present research was focused to investigate the quality of non-polar SiC substrates grown by a conventional PVT method for optoelectronic applications. The half part of the PVT-grown 6H-SiC crystal boules was sliced along a-direction and m-direction to extensively analyze non-polar planes and then remaining part of that was sliced along the basal plane to produce wafers. The non-polar SiC m-plane and a-plane exhibited apparent peaks around 2 theta=$120^{\circ}$((3-300) plane) and 2 theta=$60^{\circ}$ ((11-20) plane), respectively. FWHM values of m-plane measured along a-direction and c-direction were 60 arc see and 57 arcsec respectively, a-plane measured along m-direction and c-direction were 41 arcsec and 51 arcsec respectively. The typical absorption spectra of SiC crystals indicated that each of SiC crystals were the 6H-SiC with fundamental absorption energy of about 3.04 eV. Non-polar planes contained no micropipe on etched surface. The carrier concentration and mobility of non-polar SiC wafers have estimated by Raman spectrum. It was observed that the carrier mobility is low in the area far from seed crystal with compared to other places.

• Korean Chemical Engineering Research
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• v.46 no.5
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• pp.938-944
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• 2008

The electro-optic properties of polymer-dispersed liquid crystal cells containing BDVE(Butanediol vinyl ether) in PN393 base pre-polymer were examined. The higher the contents of BDVE, the smaller becomes the droplet size. However, the droplet size was saturated around $3{\mu}m$ even at 40 wt% of BDVE. Both of contrast ratio and response time of PDLC cell fabricated with a new formula were found to be superior to the reference cell with PN393 by the factor of 4.9 and 0.15, respectively. However, the new formula made the operating voltage go higher compared to the reference cell of PN393 formula. Except for contrast ratio, response time as well as operating voltage were found to be highly stabilized by adding BDVE in PN393 base pre-polymer over the temperature range of $0{\sim}60^{\circ}C$ studied.

• Journal of the Korean institute of surface engineering
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• v.52 no.2
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• pp.90-95
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• 2019

Methylammonium lead bromide ($MAPbBr_3$) has attracted a lot of attention due to their excellent optoelectronic properties such as the compositional flexibility relevant to photoluminescence (PL) and UV-Vis absorbance spectrum, high diffusion length, and photoluminescence quantum yield (PLQY). Despite such advantages of organic-inorganic perovskite materials, more systematic study on manipulation of their optoelectronic properties in homo- or heterovalent metal ions doped halide perovskite nanocrystals is lacking. In this study, we systematically investigated the optical properties of colloidal $CH_3NH_3Pb_{1-x}Sn_xCl_{2x}Br_{3-2x}$ particles by addition of $SnCl_2$ into the typical methylammonium lead tribromide ($CH_3NH_3PbBr_3$) precursor solution. We found that only 1% addition of $SnCl_2$ shows a significant blue-shift from 540 nm to 420 nm in UV-Vis absorbance spectrum due to the strong quantum confinement effect. Furthermore, continuous blue-shift in photoluminescence spectra was observed as the amount of Cl increases. These experimental results provide new insights into the replacement of Pb within $MAPbBr_3$, required for the broadening of their application.

• Journal of the Korean Physical Society
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• v.73 no.10
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• pp.1437-1443
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• 2018

In this work, $SnO_2$ modified with reduced graphene oxide (rGO) and carbon nanotubes (CNTs) separately and combined sensitized by using the co-precipitation method and their sensing behavior toward ethanol vapor at room temperature were investigated. An interdigitated electrode (IDE) gold substrate is very expensive compared to a fluorine doped tin oxide (FTO) substrate; hence, we used the latter to reduce the fabrication cost. The structure and the morphology of the studied materials were characterized by using differential thermal analyses (DTA) and thermogravimetric analysis (TGA), transmission electron microscope (TEM), X-ray diffraction (XRD), Fourier transform infrared (FTIR) spectroscopy, Brunauer-Emmett-Teller surface area and Barrett-Joyner-Halenda (BJH) pore size measurements. The studied composites were subjected to ethanol in its gas phase at concentrations from 10 to 200 ppm. The present composites showed high-performance sensitivity for many reasons: the incorporation of $SnO_2$ and CNTs which prevents the agglomeration of rGO sheets, the formation of a 3D mesopourus structure and an increase in the surface area. The decoration with rGO and CNTs led to more active sites, such as vacancies, which increased the adsorption of ethanol gas. In addition, the mesopore structure and the nano size of the $SnO_2$ particles allowed an efficient diffusion of gases to the active sites. Based on these results, the present composites should be considered as efficient and low-cost sensors for alcohol.

• Prospectives of Industrial Chemistry
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• v.24 no.5
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• pp.1-14
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• 2021

유무기 하이브리드 금속-할라이드계 페로브스카이트(organic-inorganic metal halide perovskite) 페로브스카이트 반도체 소재는 광전자 소자와 소재 연구에 새로운 연구 흐름을 만들고 있다. 태양전지 성능이 불과 과거 몇 년 사이의 짧은 연구 기간에도 불구하고, 광-전 변환 소자 중에서도 단일 소자와 적층 소자(tandem)에서 높은 광-전 변환 효율을 나타내기 때문이다. 이러한 급격한 연구 성과와 성장에도 불구하고, 페로브스카이트 소재의 다양한 광전자 특성의 평가와 결과에 대한 논의가 필요한 상황이다. 특히 내부 이온 이동이 광전자 원거리 이동 특성 평가와 해석에 영향을 주는 경우, 페로브스카이트 소재를 기반으로 한 다양한 광전자 소자의 성능 향상과 해석에 여전히 모호함을 준다. 달리 얘기하면, 이 소재의 기초 특성을 이해하고자 적용하는 다양한 기존 특성 평가 분석법의 활용과 해석에도 복잡한 영향을 미치고 있다고 할 수 있다. 이러한 페로브스카이트 소재 내에서 광전자 원거리 이동을 측정하는 새로운 방법을 소개하고자 한다. 첫 번째 방법으로, Quasi-steady 상태에서 광전도도를 전기적 특성으로 측정하고, 광조사 하에 투과 및 반사를 광학적으로 측정하여, 전도도와 광전자 밀도를 동시에 평가하는 방법으로, photo-induced transmission and reflection (PITR) 분광분석법이다. 이 분광분석법은 실제 소자의 구동조건을 구현한 상태에서 광전자의 원거리 이동에서 발생하는 광전자 밀도 변화를 반영한 광전자 이동도 특성 평가라는 장점을 가지고 있다. 두 번째 방법으로, 기존의 연속 전압 인가 방법 대신 펄스형 전압 인가 방식을 도입하는 방법으로, pulsed voltage space charge limited current (PV-SCLC) 분석법이다. 이는 펄스형 전압 인가 방법으로 이온의 이동을 최소화하여, 전류-전압 측정에서 히스테리시스가 없고 측정결과의 재현성과 신뢰도가 매우 높은 장점이 있다.

• Journal of Adhesion and Interface
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• v.23 no.2
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• pp.39-43
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• 2022

In optoelectronic devices including displays and solar cells that convert electricity into light or light into electricity, it is important to control optical behavior of light to improve device efficiency. Specifically, the control of internal emitting light in the OLEDs can induce more light to go out, improving luminous efficiency. In addition, the control of optical behavior of incident light in solar cells can increase optical path in the light absorption layer, increasing power-conversion efficiency. In this study, we generated wrinkles as a physical structure to control optical behavior of light and independently controlled their wavelength and height by changing stress relaxation time. To explore the effect of wavelength and height on optical behavior, we conducted UV/Vis spectroscopy analysis of wrinkles with various heights at a constant wavelength or various wavelengths at a comparable height, figuring out a wrinkle with high aspect ratio has more dispersive light and less straight light. It indicates that high aspect ratio is required to change the optical behavior and increase the optical path.

• Journal of the Korean Applied Science and Technology
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• v.40 no.5
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• pp.1116-1125
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• 2023

Zinc oxide film is a transparent conductive material and is used in optoelectronic devices in various fields. Therefore, characterization of the zinc oxide film will play a very important role in improving the performance of optoelectronic devices. Here, we will evaluate the morphological and structural characteristics of such a zinc oxide film based on the solution process. Specifically, the sol-gel method will be repeatedly performed to observe the change in material properties of the zinc oxide film according to the number of times of spin-coating. It was confirmed that crystallization proceeded as a result of performing the sol-gel method repetitively 5 times under constant solution conditions. At 7 times or more, the element composition and crystallinity tended to converge to a specific value. The average crystal size of the final zinc oxide film was calculated to be about 10.7 nm. In this study, the number of processes showing optimal crystallization was 7 times. The results and methodology of this study can be applied while varying various solution process variables and are expected to contribute to establishing optimal process conditions.