• Carbon letters
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• v.12 no.2
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• pp.90-94
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• 2011

We present the effect of a coupling agent on the optoelectrical properties of few-walled carbon nanotube (FWCNT)/epoxy resin hybrid films fabricated on glass substrates. The FWCNT/epoxy resin mixture solution was successfully prepared by the direct mixing of a $HNO_3$-treated FWCNT solution and epoxy resin. FWCNT/binder hybrid films containing different amounts of the coupling agent were then fabricated on UV-ozone-treated glass substrates. To determine the critical binder content ($X_c$), the effects of varying the binder content in the FWCNT/silane hybrid films on their optoelectrical properties were investigated. In this system, the $X_c$ value was approximately 75 wt%. It was found that above $X_c$, the coupling agent effectively decreased the sheet resistance of the films. From microscopy images, it was observed that by adding the coupling agent, more uniform FWCNT/binder films were formed.

• Proceedings of the Materials Research Society of Korea Conference
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• 2007.11a
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• pp.57.2-57.2
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• 2007

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2009.04b
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• pp.97-98
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• 2009

Here, we describe a versatile strategy for precise control of the optoelectrical properties of the single walled carbon nanotube (SWNT)/silane binder hybrid films by noncovalent hybridization. Stable SWNT/silane binder solutions were prepared by direct mixing of high concentration CNT solutions and silane sol solutions. The critical binder content was determined by varying the amount of binder in the SWNT/binder solutions. A binder content of 50 wt% was used to prepare the other SWNT/binder solutions. This study demonstrates how the intermolecular interactions between the SWNTs and the silanes can affect the conductivity of the CNT/binder network films by characterizing the optoelectrical and Raman spectroscopic properties of the SWNT/silane films containing silane binders with various functional groups. The use of the PTMS binder with phenyl groups was found to be most effective in the fabrication of transparent and conductive films on glass substrates. Such a precise control of the optoelectrical properties of SWNT/binder films can be useful to fabricate the high performance conductive thin films, with ramifications for understanding the fundamental intermolecular interaction in carbon materials science.

• Proceedings of the Korean Vacuum Society Conference
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• 2015.08a
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• pp.178.2-178.2
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• 2015

In and Ga doped ZnO (IGZO) films were deposited on 5 nm thick Cu film buffered Polycarbonate (PC) substrates with RF magnetron sputtering and then the effect of Cu buffer layer on the optical and electrical properties of the films was investigated. While IGZO single layer films show the electrical resistivity of $1.2{\times}10-1{\Omega}cm$, IGZO/Cu bi-layered films show a lower resistivity of $1.6{\times}10-3{\Omega}cm$. Although the optical transmittance of the films in a visible wave length range is deteriorated by Cu buffer layer, IGZO films with 5 nm thick Cu buffer layer show the higher figure of merit of $2.6{\times}10-4{\Omega}-1$ than that of the IGZO single layer films due to the enhanced opto-electrical performance of the IGZO/Cu bi-layered films.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.11a
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• pp.276-276
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• 2008

Transparent and conducting indium tin oxide (ITO) and ITO/Nickel/ITO(INI) multilayered films were prepared on glass substrates by a magnetron sputtering without intentional substrate heating. The RF(13.56MHz) and DC power were applied to ITO and Nickel target, respectively. The thickness of ITO, Ni and ITO films were kept constantly at 50, 5 and 45 nm. In order to consider the effect of post deposition vacuum annealing in vacuum on the physical and optoeletrical properties of INI films, optical transmittance, electrical resistivity, crystallinity of the films were analyzed. From the observed result, it may conclude that the optoelectrical properties of the INI films were dependent on the post deposition annealing. For the INI films annealed at $300^{\circ}C$, the films have a polycrystalline structure with (110), (200), (210), (211) and (300). The resistivity of the films were $4.0\times10^{-4}{\Omega}cm$ at room temperature. As the annealing($300^{\circ}C$), resistivity decreased to $2.8\times10^{-4}{\Omega}cm$. And also the optical transmittance decreased from 79 to 70 % at 550nm.

• Transactions on Electrical and Electronic Materials
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• v.10 no.5
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• pp.165-168
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• 2009

Transparent and conducting ITO/Cu/ITO multilayered films were deposited by magnetron sputtering on unheated polycarbonate (PC) substrates. The thickness of the Cu intermediate film was varied from 5 to 20 nm. Changes in the microstructure and optoelectrical properties of ITO/Cu/ITO films were investigated with respect to the thickness of the Cu intermediated layer. The optoelectrical properties of the films were significantly influenced by the thickness of the Cu interlayer. The sandwich structure of ITO 50 nm/Cu 5 nm/ITO 45 nm films had a sheet resistance of $36{\Omega}$/Sq. and an optical transmittance of 67% (contain substrate) at a wavelength of 550 nm, while the ITO 50 nm/Cu 20 nm/ITO 30 nm films had a sheet resistance of $70{\Omega}$/Sq. and an optical transmittance of 36%. The electrical and optical properties of ITO/Cu/ITO films were determined mainly by the Cu film properties. From the figure of merit, it is concluded that the ITO/Cu/ITO films with a 5 nm Cu interlayer showed the better performance in transparent conducting electrode applications than the conventional ITO films.

• Polymer(Korea)
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• v.38 no.4
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• pp.525-529
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• 2014

PEDOT-$TiO_2$ hybrid conductive thin film including semiconductive metal oxide was successfully prepared via simultaneous vapor phase polymerization (VPP). The mechanical properties such as pencil hardness and anti-scratch property as well as optoelectrical properties of PEDOT-$TiO_2$ hybrid thin film could be improved as compared with pristine PEDOT thin film. Physicochemically stable crosslinked $TiO_2$ layer derived from a sol-gel process by FTS was generated in the PEDOT thin film layer by simultaneous VPP, resulting in improving mechanical properties of the hybrid thin films without any deterioration of their original optoelectrical properties. PEDOT-$TiO_2$ hybrid thin film showed better electrical conductivity as compared with PEDOT film. It might be due to the fact that the surface morphology of hybrid thin film prepared by simultaneous VPP showed smoother than that of pristine PEDOT thin film.

• Journal of the Korean Ceramic Society
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• v.55 no.4
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• pp.325-336
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• 2018

Perovskite solar cells (PSCs) are a new class of photovoltaic devices, which have attracted significant attention due to their remarkable optoelectrical properties, including high absorption coefficients, high carrier mobilities, long carrier diffusion lengths, tunable bandgaps, low cost, and facile fabrication. PSCs have reached efficiencies of 22.70% and 18.36% on rigid fluorine-doped tin oxide and poly(ethylene terephthalate) substrates, respectively; these are comparable to those of single-crystal silicon and copper-indium-gallium-selenium solar cells. Over the past eight years, the photo conversion efficiency of PSCs has been significantly improved by device-architecture adjustments, and absorber and electron/hole transport layer optimization. Each layer is important for the performance of PSCs; hence, we discuss achievements in flexible perovskite solar cells (FPSCs), covering electron/hole-transport materials, electrode materials. We give a comprehensive overview of FPSCs and put forward suggestions for their further development.

• Journal of the Korean Ceramic Society
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• v.38 no.12
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• pp.1085-1092
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• 2001

The high efficient AC powder EL devices classified by low cost and low power consumption type fabricated using screen printing method with film thickness and organic binder. Brightness and current density were measured at frequency range of 400Hz∼1kHz and voltage range of 50∼300V$\_$rms/ to estimate optoelectrical properties of AC powder EL devices, respectively. Frequency generator was used as system producing frequency and voltage of a sine wave. Also brightness and current density were measured by luminometer and multimeter. In the case of low cost type AC powder EL device, brightness and current density were about 43 cd/m$^2$and 20$\mu$A/cm$^2$when the thickness of phosphor and dielectric layer was 45∼50$\mu$m under no addition of plasticizer respectively. In the case of low power consumption type AC powder EL device, brightness and current density were about 74 cd/m$^2$and 30∼40$\mu$A/cm$^2$when the thickness of phosphor and dielectric layer was 45∼50$\mu$m and 15∼20$\mu$m under addition of 15wt% plasticizer respectively. Also, AC powder EL device fabricated in this study showed absolutely excellent characteristics as the lifetime was longer than products of other company.

• Journal of the Korean institute of surface engineering
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• v.55 no.6
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• pp.363-367
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• 2022

Transparent ZnO/Ti/ZnO (ZTZ) tri-layered films were prepared with radio frequency (RF) and direct current (DC) magnetron sputtering on the glass substrate. The thickness of the ZnO and Ti films was kept at 50 and 10 nm to consider the effect of the electron irradiation on the crystallization and optoelectrical properties of the films. From the XRD spectra, post-depostion electron irradiated films showed the characteristic peaks of ZnO(002) and Ti(200), respectively. the observed grain size of the ZnO(002) and Ti(200) enlarged up to 18.27 and 12.16 nm at an irradiation condition of 750 eV. In the figure of merit which means an optoelectrical performance of the films, as deposited films show a figure of merit of 2.0×10^-5 𝛺^-1, while the films electron irradiated at 750 eV show a higher figure of merit of 5.7×10^-5 𝛺^-1.