• Communications for Statistical Applications and Methods
• /
• v.16 no.1
• /
• pp.169-183
• /
• 2009

The simplicity and wide application of Greenberg et al. (1971) prompts to propose a set of alternative estimators of population total for multi-character surveys that elicit simultaneous information on many. sensitive study variables. The proposed estimators take into account the already known rough value of the correlation coefficient between Y(the characteristic under study) and p(the measure of size). These estimators are biased, but it is expected that the extent of bias will be smaller, since the proposed estimators are suitable for situations in between those optimum for the usual estimators and the estimators based on multi-characters for no correlation. The relative efficiency of the proposed estimators has been studied under a super population model through empirical study. It has been found through simulation study that a choice of an unrelated variable in the Greenberg et al. (1971) model could be made based on its correlation with the auxiliary variable used at estimation stage in multi-character surveys.

• 한국정보디스플레이학회:학술대회논문집
• /
• 2005.07a
• /
• pp.272-275
• /
• 2005

The high stability of a-Si:H TFTs device is studied with different deposited conditions of $SiN_x$ films by PECVD. The process parameters of $N_2$, $NH_3$ gas flow rate, RF power, and pressure s of hydrogenated amorphous silicon nitride are taken into account and analyzed by Taguchi experimental design method. The $NH_3$ gas flow rate and RF power are two major factors on the average threshold voltage and the a-SiNx:H film's structure. The hydrogen contents in $SiN_x$ films were measured by FTIR using the related Si-H/N-H bonds ratio in $a-SiN_x:H$ films. After the 330,000 sec gate bias stress is applied, the threshold voltages ($V_th$) shift less than 10%. This result indicates that the highly stable a-Si:H TFTs device can be fabricated with optimum gate $SiN_x$ insulator.

• 연구논문집
• /
• s.30
• /
• pp.147-157
• /
• 2000

The filtered vacuum arc source (FVAS), which is adopted by magnetic filtering methode to remove the macro-particle in vacuum arc plasma, was composed of a torus structure with bending angle of 60 degree. The radius of torus was 266 mm, the radius of plasma duct was 80 mm and the total length was 600 mm. The magnet parts were consisted of one permanent magnet, one magnetic yoke and five solenoid magnets. The plasma duct was electrically isolated from the ground so that a bias voltage could be applied. The baffles inside plasma duct were installed in order to prevent the recoil effect of macro-particles. Graphite was used as the cathode material to coat the amorphic diamond film and its diameter was 80 mm. The amorphic diamond film attracts much attention due to its excellent mechanical, optical and tribological properties suitable for wide range of applications. The effects of solenoid magnet in plasma extraction were studied by computer simulation and experiment using Taguchi's method. The source and extraction magnet affected the arc stabilization. The extraction beam current was maximized with low value of the source magnet current and high value of the filtering magnet current. Optimum deposition condition was obtained when the currents of arc discharge, source, extraction, bending, deflection and outlet magnet were 30 A, 1 A, 3 A, 5 A, and 5 A, respectively.

• Proceedings of the KIEE Conference
• /
• 1994.07b
• /
• pp.1589-1592
• /
• 1994

We developed the ion plating system, consisted of the Facing Target Magnetron Sputtering System and the r.f, electrode of the coil type, which was available to control the reactive and the adhesion between thin film and substrate, and studied about the discharge characteristics and the optimum condition in order to form the high quality thin film. The characteristics of discharge and plasma was measured as Double Probe and Electrostatic Retarding Grid Analyzer. The incident ion energy on the substrate was increased as the increasing r.f power, bias voltage. By the r.f electrode, the ionization rate of the sputtered particles was about 75%, and the mean incident ion energy depend on the value which was difference between the plasma potential and biased substrate potential.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 1992.05a
• /
• pp.105-109
• /
• 1992

ITO film, 1500${\AA}$ of thickness, onto glass and p-InP wafer was prepared by e-beam evaporator. The bet ITO film had the resistivity 5.3${\times}$10$\^$-3/ $\Omega$-cm, the concentration 6.5${\times}$10$\^$20/cm$\^$-3/, the transmittance above 80%, and the optical energy gap about 3.5eV. The higher pressure of injected oxygen, the less reverse bias saturation current and the more open circuit voltage. Under the optimum evaporation conditions, the efficiency was 7.19% and the series resistance, and the shunt resistance were respectively 8.5%, 3${\alpha}$, and 26K$\Omega$. The interdependence between activation energy and pre-exponential factor was found. We found he surface of the p-InP became n-type and consquently supposed that the buried homojunction formation, that is, n+-ITO/n-InP/p-InP was caused by Sn diffusion or loss of phosphorus in the interface layer.

• Journal of the Institute of Electronics Engineers of Korea SD
• /
• v.47 no.10
• /
• pp.14-22
• /
• 2010

The source/channel/drain regions are formed by ion implantation with different dopant types of $n^+/p^{(+)}/n^+$ in the fabrication of the conventional n-type metal-oxide-semiconductor field effect transistor(NMOSFET). In implementing the ultra-small devices with channel length of sub-30 nm, in order to achieve the designed effective channel length accurately, low thermal budget should be considered in the fabrication processes for minimizing the lateral diffusion of dopants although the implanted ions should be activated as completely as possible for higher on-current level. Junctionless (JL) MOSFETs fully capable of the the conventional NMOSFET operations without p-type channel for enlarging the process margin are under researches. In this paper, the optimum design of the JL MOSFET based on silicon nanowire (SNW) structure is carried out by 3-D device simulation and the basic radio frequency (RF) characteristics such as conductance, maximum oscillation frequency($f_{max}$), current gain cut-off frequency($f_T$) for the optimized device. The channel length was 30 run and the design variables were the channel doping concentration and SNW radius. For the optimally designed JL SNW NMOSFET, $f_T$ and $f_{max}$ high as 367.5 GHz and 602.5 GHz could be obtained, respectively, at the operating bias condition $V_{GS}$ = $V_{DS}$ = 1.0 V).

• Journal of the Korea Institute of Information and Communication Engineering
• /
• v.10 no.1
• /
• pp.111-116
• /
• 2006

In this paper, the image sensor using the a-Si:H TFT is proposed. The optimum amorphous silicon thin film is deposited using plasma enhanced chemical vapor deposition (PECVD). TFT and photodiode both with the thin film are fabricated and form image sensor. The photodiode shows that Idark is $10^{-12}A$, Iphoto is $10^{-9}A$ and Iphoto/Idark is $10^3$, respectively. In the case of a-Si:H TFT, it indicates that Ion/Ioff is $10^6$, the drain current is a few ${\mu}A$ and Vth is $2\~4$ volts. For the analysis on the fabricated image sensor, the reverse bias of -5 voltage in ITO of photodiode and $70{\mu}sec$ pulse in the gate of TFT are applied. The image sensor with good property was conformed through the measured photo/dark current.

• Proceedings of the Korean Vacuum Society Conference
• /
• 2016.02a
• /
• pp.433-433
• /
• 2016

Carbon nanotubes (CNT) emitter has widely become an attractive mechanism that draws growing interests for cold cathode field emission. CNT yarns have demonstrated its potential as excellent field emitters. It was demonstrated that a small focal spot size was achieved by manipulating some electrical parameters, such as applied bias voltage at the mesh gate, and electrostatic focal lenses, geometrical parameters, such as axial distances of the anode, and the electrostatic focal lens from the cathode assembly, and the dimension of the opening of the electrostatic lens. Electrical-optics software was used to systematically investigate the behavior of the electron beam trajectory when the aforementioned variables were manipulated. The results of the experiment agree with the theoretical simulation results. Each variable has an individual effect on the electron beam focal spot size impinging on the target anode. An optimum condition of the parameters was obtained producing good quality of X-ray images. Also, MWCNT yarn was investigated for field emission characteristics and its contribution in the X-ray generation. The dry spinning method was used to fabricate MWCNT yarn from super MWCNTs, which was fabricated by MW-PECVD. The MWCNT yarn has a significant field emission capability in both diode and the triode X-ray generation structure compared to a MWCNT. The low-voltage-field emission of the MWCNT yarn can be attributed to the field enhancing effect of the yarn due to its shape and the contribution of the high-aspect-ratio nanotubes that protrude from the sides of the yarn. Observations of the use of filters on the development of X-ray images were also demonstrated. The amount of exposure time of the samples to the X-ray was also manipulated. The MWCNT yarn can be a good candidate for use in the low voltage field emission application of X-ray imaging.

• Korean Journal of Remote Sensing
• /
• v.29 no.6
• /
• pp.601-610
• /
• 2013

As a standard water clarity variable, the vertical underwater visibility, called Secchi depth, is estimated with ocean color satellite data. In the present study, Moderate Resolvtion Imaging Spectradiometer (MODIS) data are used to measure the Secchi depth which is a useful indicator of ocean transparency for estimating the water quality and productivity. To estimate the Secchi depth $Z_v$, the empirical regression model is developed based on the satellite optical data and in-situ data. In the previous study, a semi-analytical algorithm for estimating $Z_v$ was developed and validated for Case 1 and 2 waters in both coastal and oceanic waters using extensive sets of satellite and in-situ data. The algorithm uses the vertical diffuse attenuation coefficient, $K_d$($m^{-1}$) and the beam attenuation coefficient, c($m^{-1}$) obtained from satellite ocean color data to estimate $Z_v$. In this study, the semi-analytical algorithm is validated using temporal MODIS data and in-situ data over the Yellow, Southern and East Seas including Case 1 and 2 waters. Using total 156 matching data, MODIS $Z_v$ data showed about 3.6m RMSE value and 1.7m bias value. The $Z_v$ values of the East Sea and Southern Sea showed higher RMSE than the Yellow Sea. Although the semi-analytical algorithm used the fixed coupling constant (= 6.0) transformed from Inherent Optical Properties (IOP) and Apparent Optical Properties (AOP) to Secchi depth, various coupling constants are needed for different sea types and water depth for the optimum estimation of $Z_v$.

• Journal of the Korea Institute of Information and Communication Engineering
• /
• v.9 no.2
• /
• pp.422-427
• /
• 2005

In this paper, Doherty amplifier is designed by the need of improving the linearity and efficiency of wireless network and repeater for WCDMA. It is designed to maintain the high linearity and efficiency at the low efficiency period of the power amplifier after analyzing Doherty technique using the active load-pull in condition of the high efficiency power amplifier implementation according to the variation of input power. CW 1-tone experimental results at the WCDMA frequency 2.11$\~$2.17 CHz shows that Doherty amplifier, which achieves pore. add efficiency(PAE) 50$\%$ at 6dB back off the point from maximum output power 52.3dBm, obtains higher efficiency of 13.3$\%$ than class AB. finding optimum bias point after adjusted gate voltage, Doherty amplifier shows that IMD3 improves 4dB.