• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.06a
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• pp.435-436
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• 2008

In this paper, the electro-optical characteristics of carbon nano tubes (CNTs) doped liquid crystal (LC), in fringe-field switching cell have been investigated and compared with pure LC. The electro-optical characteristics of CNTs doped LC were found to be improved than that of pure LC. The CNTs doped LC exhibits faster response time and lower driving voltage than that of pure LC.

• 한국정보디스플레이학회:학술대회논문집
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• 2005.07a
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• pp.181-186
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• 2005

We demonstrate that the finite rate of dielectric relaxation in liquid crystals which has been ignored previously causes profound effects in the fast dielectric reorientation of the director. The phenomenon is relevant for submillisecond switching of the director when the switching rate approaches the rate of dielectric relaxation through the reorientation of the molecular dipoles. A submillisecond switching ($15-400\;{\mu}s$ for an optical retardation shift $0.3-2.2\;{\mu}m$ in $10-15\;{\mu}m$ thick cells) is demonstrated for dual frequency nematic cells with high pretilt that maximizes the dielectric torque acting on the director. We propose the theory of dielectric response in which the electric displacement depends not only on the present (as in the standard theory) but also on the past values of electric field and director. We design an experiment in which the standard "instantaneous" model and our model predict effects of opposite signs; the experimental data support the latter model.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1996.11a
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• pp.234-237
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• 1996

The amorphous chalogenide semiconductors are new material in semiconductor physics. Their properties, especially electronic and optical properties are main motives for device application. Amorphous As$_{10}$Ge$_{15}$ Te$_{75}$material has the stable ac conductivity at high frequency and the dc memory switching property. At higher frequency than 10MHz, ac conductivity of As$_{10}$Ge$_{15}$ Te$_{75}$ thin film is much higher than below frequency and independent of temperature and frequency. If the dc voltages are applied between edges of thin film, one can see the dc memory switching phenomenon, in other words the dc conductivity increases quite a few of magnitude after the threshold voltage is applied. Using the stable ac conductivity at high frequency and the increase of conductivity after dc memory switching, As$_{10}$Ge$_{15}$ Te$_{75}$thin film is considered as new material for microwave switch devices.vices.es.vices.

• The Transactions of The Korean Institute of Electrical Engineers
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• v.62 no.6
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• pp.744-749
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• 2013

The protection switching technology is widely adopted in the fiber-optical transmission equipments based on TDM(Time Division Multiplexing), such as PDH, SDH/SONET. A variety of protection switching algorithms for Ethernet networks and the progress of standardization are summarized in the document. There are several kinds of protection switching algorithms for Ethernet networks, such as STP, RSTP, MSTP and etc. However, since Ethernet signal move through detour route, it causes much time to recover. Accordingly, it is difficult to secure a usability of Ethernet networks and QOS(Quality of Service). Also, if the protection switching protocol standardized by IEEE and ITU-T is used, it remains a inherent network switching time for protection. Therefore, a specific protection switching algorithm for Ethernet are needed for seamless and stable operation of Ethernet networks service for Distribution Automation System(DAS). A reliable protection algorithm with no switching delay time is very important to implement Self-healing service for DAS. This study of FPGA based protection switching algorithm for Ethernet networks shows that in case of faults occurrence on distribution power network, immediate fault isolation and restoration are conducted through interaction with distribution equipments using P2P(Peer to Peer) communication for protection coordination. It is concluded that FPGA based protection switching algorithm for Ethernet networks available 0ms switching time is crucial technology to secure reliability of DAS.

• Korean Journal of Materials Research
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• v.30 no.2
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• pp.99-104
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• 2020

Recent discoveries of ferroelectric properties in ultrathin doped hafnium oxide (HfO₂) have led to the expectation that HfO₂ could overcome the shortcomings of perovskite materials and be applied to electron devices such as Fe-Random access memory (RAM), ferroelectric tunnel junction (FTJ) and negative capacitance field effect transistor (NC-FET) device. As research on hafnium oxide ferroelectrics accelerates, several models to analyze the polarization switching characteristics of hafnium oxide ferroelectrics have been proposed from the domain or energy point of view. However, there is still a lack of in-depth consideration of models that can fully express the polarization switching properties of ferroelectrics. In this paper, a Zr-doped HfO₂ thin film based metal-ferroelectric-metal (MFM) capacitor was implemented and the polarization switching dynamics, along with the ferroelectric characteristics, of the device were analyzed. In addition, a study was conducted to propose an applicable model of HfO₂-based MFM capacitors by applying various ferroelectric switching characteristics models.

• The Transactions of the Korean Institute of Electrical Engineers C
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• v.54 no.1
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• pp.30-34
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• 2005

This study shows the lasing characteristics of InGaAs/InGaAsP multiple-quantum-well waveguide-type depleted optical thyristor (DOT) using the vertical window. The measured switching voltage and current are 3.36 V and 10 ㎂, respectively. The lasing threshold current is 131 mA at 25 ℃. The output peak wavelength is 1570 nm at a bias current of 1.22 Ith and there is not input signal anymore in the output port. The vertical injection depleted optical thyristor - laser diode (VIDOT-LD) using the vertical-injection structure shows very good isolation between input and output signal.

• Journal of Sensor Science and Technology
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• v.14 no.1
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• pp.16-21
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• 2005

This paper presents the development of the optical switch using magnetic behavior of magnetic fluids, which is expected to be used broadly in high-speed information communication. The magnetic fluids for switching an incident light, have the magnetic characteristics of magnetic materials and fluidity of liquids, simultaneously. The relations are derived between the intensity of magnetic field and the angle of optical fiber which is bent by a behavior of magnetic fluid when the magnetic field is applied. When optical switch is implemented by the movement of liquid using magnetic fluid, the existing problem of durability for optical switch will be improved. Thus, this study shows the feasibility of the application for the optical switches using magnetic fluids.

• Journal of the Optical Society of Korea
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• v.18 no.5
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• pp.466-471
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• 2014

An asynchronous optical packet-switching (AOPS) node with load-balancing capability can achieve better performance in reducing the high packet-loss ratio (PLR) and time delay caused by unbalanced traffic. This paper proposes a novel dynamic load-balancing algorithm for an AOPS node with limited buffer and without wavelength converters, and considering the data flow distribution and service levels. By calculating the occupancy state of the output ports, load state of the input ports, and priorities for data flow, the traffic is balanced accordingly. Simulations demonstrate that asynchronous variant data packets and output traffic can be automatically balanced according to service levels and the data flow distribution. A PLR of less than 0.01% can be achieved, as well as an average time delay of less than 0.46 ns.

• Korean Journal of Optics and Photonics
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• v.1 no.2
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• pp.223-239
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• 1990

This paper presents an overview on the present status and future trends of photonic physics and engineering as applicable to optical materials and devices that would enable optical information processing and optical commmication technologies of the future. Covered subjects include semiconductor quantum devices, organic materials, photorefractive physics, quantum effect, non-linear processing optical amplification, memory, integrated optics, and applications in all-optical communications and processing, including photonic switching.

• Electronics and Telecommunications Trends
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• v.31 no.6
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• pp.57-66
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• 2016

통신망은 향후 통신 및 셀기반 통신망에 필요한 고속, 데이터 속도 및 투명성(transparency) 그리고 유연성(flexibility)을 제공하기 위해 빠르게 진화하고 있다. 전광 패킷 스위칭 망(all optical packet switching) 구조는 향후 급속도로 증가하는 데이터 통신 트래픽을 원활히 수용하기 위해서 싱글 홉 및 멀티 홉 전광 패킷 스위치 망의 요구사항을 만족하는 스위칭 속도, 성능, 확장성, 경제성 등을 고려한 실제 구현 가능한 구조의 필요성이 최근 대두되고 있다. 본 논문에서는 기존의 광 패킷 스위칭 기술의 한계를 극복할 수 있는 전광 멀티 홉 네트워크 기술을 기반으로 포토닉 패킷 스위칭 망을 구현하고자 세계적으로 연구되고 있는 전광 멀티 홉 네트워크 구조, 포토닉 패킷 스위칭 구조 그리고 시간동기 방법에 대해 최근의 연구동향을 분석한다.