• Proceedings of the Korean Vacuum Society Conference
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• 2014.02a
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• pp.409-409
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• 2014

Recently hexagonal boron nitride (h-BN), III-V compound of boron and nitrogen with strong covalent $sp^2$ bond, is a 2 dimensional insulating material with a large direct band gap up to 6 eV. Its outstanding properties such as strong mechanical strength, high thermal conductivity, and chemical stability have been reported to be similar or superior to graphene. Because of these excellent properties, h-BN can potentially be used for variety of applications such as dielectric layer, deep UV optoelectronic device, and protective transparent substrate. Ultra flat and charge impurity-free surface of h-BN is also an ideal substrate to maintain electrical properties of 2 dimensional materials such as graphene. To synthesize a single or a few layered h-BN, chemical vapor deposition method (CVD) has been widely used by using an ammonia borane as a precursor. Ammonia borane decomposes into hydrogen (gas), monomeric aminoborane (solid), and borazine (gas) that is used for growing h-BN layer. However, very active monomeric aminoborane forms polymeric aminoborane nanoparticles that are white non-crystalline BN nanoparticles of 50~100 nm in diameter. The presence of these BN nanoparticles following the synthesis has been hampering the implementation of h-BN to various applications. Therefore, it is quite important to grow a clean and high quality h-BN layer free of BN particles without having to introduce complicated process steps. We have demonstrated a synthesis of a high quality h-BN monolayer free of BN nanoparticles in wafer-scale size of $7{\times}7cm^2$ by using CVD method incorporating a simple filter system. The measured results have shown that the filter can effectively remove BN nanoparticles by restricting them from reaching to Cu substrate. Layer thickness of about 0.48 nm measured by AFM, a Raman shift of $1,371{\sim}1,372cm^{-1}$ measured by micro Raman spectroscopy along with optical band gap of 6.06 eV estimated from UV-Vis Spectrophotometer confirm the formation of monolayer h-BN. Quantitative XPS analysis for the ratio of boron and nitrogen and CS-corrected HRTEM image of atomic resolution hexagonal lattices indicate a high quality stoichiometric h-BN. The method presented here provides a promising technique for the synthesis of high quality monolayer h-BN free of BN nanoparticles.

• Proceedings of the Korean Society for Agricultural Machinery Conference
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• 2000.11b
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• pp.210-218
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• 2000

Since the SSC(soluble solid contents) and titratable acidity of fruit are highly concerned to the taste, the need for measuring them by non-destructive technology such as NIR(Visual and Near-infrared) spectroscopy is increasing. Specially, in order to grade the quality of each fruit with a sorter at sorting and packing facilities, technologies for online measurement satisfying the tolerance in terms of accuracy and speed should be developed. Many researches have been done to develop devices to measure the internal qualities of fruit such as SSC, titratable acidity, firmness, etc. with the VIS(Visual)/NIR(Near Infrared) reflectance spectra. The distributions of the SSC, titratable acidity, firmness, etc. are different with respect to the position and depth of fruit, and generally the VIS/NIR light can interact with fruit in a few millimeters of pathlength, and it is very difficult to measure the qualities of inner flesh of fruit. Therefore, to measure the average concentrations of each quality factor such as SSC and titratable acidity with the reflectance-type NIR devices, the spectra of fruit at several positions should be measured. Recently, the interest about the transmittance-type VIS/NIR devices is increasing. NIR light can penetrate through the fruit about 1/10-1/1,000,000 %. Therefore, very intensive light source and very sensitive sensor should be adopted to measure the transmitted light spectra of intact fruit. The ultimate purpose of this study was to develop a device to measure the transmitted light spectra of intact fruit such as apple, pear, peach, etc. With the transmittance-type VIS/NIR device, the feasibility of measurement of the SSC and titratable acidity in intact fruit cultivated in Korea was tested. The results are summarized as follows; A simple measurement device which can measure the transmitted light spectra of intact fruit was constructed with sample holder, two 500W-tungsten halogen lamps, a real-time spectrometer having a very sensitive CCD array sensor and optical fiber probe. With the device, it was possible to measure the transmitted light spectra of intact fruit such as apple, pear and peach. Main factors affecting the intensity of transmitted light spectra were the size of sample, the radiation intensity of light source and the integration time of the detector. Sample holder should be designed so that direct light leakage to the probe could be protected. Preprocessing method to the raw spectrum data significantly influenced the performance of the nondestructive measurement of SSC and titratable acidity of intact fruit. Representative results of PLS models in predicting the SSC of peach were SEP of 0.558 Brix% and R2 of 0.819, and those in predicting titratable acidity were SEP of 0.056% and R2 of 0.655.

• Proceedings of the Korean Vacuum Society Conference
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• 2000.02a
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• pp.126-126
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• 2000

다이아몬드상 카본(DLC) 필름은 경도가 높고, 마찰계수가 낮다는 장점을 가지고 있기 때문에 내마모성 코팅이나 윤활성코팅에 응용을 위한 연구가 활발히 진행중이다. 하지만 마찰계수가 주변환경에 매우 큰 영향을 받는다는 단점이 있다. 이러한 단점은 DLC필름의 응용에 대한 저해 요인이 되며, 이 점을 보완하기 위해서 DLC 필름에 Si을 첨가하는 연구들이 진행되고 있다. 본 실험에서는 r.f-PACVD 법을 이용하여 Si이 첨가된 DLC 필름의 주위 환경 변화에 따른 마찰특성의 변화를 연구하였다. 사용한 반응 가스는 벤젠(C6H)과 희석된 Silane(SiH4 : H2 = 10 : 90)이며, 희석된 Silane과 벤젠의 첨가비율을 조절하여 필름내 Si의 함량을 조절하였고, 증착시 바이아스의 전압은 -400V로 하였다. 마찰테스트는 Ball-on-Disk type의 조건에서 대기, 건조공기, 진공의 세가지 분위기에서 마찰테스트를 실행하였다. 실험결과 마찰계수는 건조공기, 대기, 진공의 순으로 증가하였고, 필름내에 포함되어 있는 Si의 양이 증가할수록 마찰계수는 낮고 안정한 값을 나타내었다. Tribochemiacal 분석과, ball과 track의 전자현미경 사진 분석 결과, 진공에 비해서 건조공기와 대기중에서 마찰계수가 낮은 것은 DLC 필름내에 마모 track 중심부에 Si-C-O 계의 화합물이 형성되어, 이 화합물이 마찰계면에 존재하여 마찰계수를 낮추었음을 확인하였다. 그리고 대기중에서 실험한 경우, 습기의 존재로 인해 마모입자가 볼의 표면에서 엉김으로써 건조공기의 상태에서 보다 높은 마찰저항을 갖게 됨으로 인하여 마찰계수가 높아짐을 알 수 있었다.a)는 as-deposit 상태이며, 그림 1(b)는 45$0^{\circ}C$, 60min 열처리한 plan-view TEM 사진이다.dical의 영향을 조사하였으며 oxygen radical의 rf power에 따른 변화는 OES(Optical emission spectroscopy)를 사용하였다. 너무 적은 oxygen ion beam flux나 oxygen radical은 film의 전도도 및 투과도를 저하시켰고 반면 너무 과도한 flux의 증가 시는 전도도는 감소하였고 투과도는 증가하는 경향을 보였다. 기판에 도달하는 oxygen ion flux는 faraday cup을 이용하여 측정하였으며 증착된 ITO film은 XPS, UV-spectrometer, 4-point probe를 이용하여 분석하였다. 때문으로 생각되어진다. 또한, 성장 온도가 낮아짐에 따라 AlGaN의 성장을 저해하기 때문으로 판단된다. 성장 온도 변화에 따라 성장된 V의 구조적 특성 및 표면 거칠기 변화를 관찰하여 AlGaN의 성장 거동을 논의하겠다.034, 0.005 정도로 다시 감소하였다. 박막의 유전율은 약 35 정도의 값을 나타내었으며 X-선 회절 data로부터 분석한 박막의 변형은 증온도에 따라 7.2%에서 0.04%로 감소하였고 이 이경향은 유전손실은 감소경향과 일치하였다.는 현저하게 향상되었다. 그 원인은 SB power의 인가에 의해 활성화된 precursor 분자들이 큰 에너지를 가지고 기판에 유입되어 치밀한 박막이 형성되었기 때문으로 사료된다.을수 있었다.보았다.다.다양한 기능을 가진 신소재 제조에 있다. 또한 경제적인 측면에서도 고부가 가치의 제품

• Proceedings of the Korean Vacuum Society Conference
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• 2011.08a
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• pp.351-352
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• 2011

그래핀(Graphene)은 2차원 평면구조의 $sp^2$ 탄소 결합으로 이루어진 물질이다. 일반적으로 그래핀은 탄소 원자 한층 정도의 얇은 두께를 가지면서 강철의 100배 이상 높은 강도, 다이아몬드보다 2배 이상 뛰어난 열 전도성, 그리고 규소보다 100배 이상 빠른 전자이동도 등의 매우 우수한 특성을 지닌다. 그래핀을 합성하거나 얻는 방법에는, 기계적 박리법(Micro mechanical exfoliation), 산화흑연(graphite oxide)을 이용한 reduced graphene oxide(RGO)방법과 탄화 규소(SiC)를 이용한 epitaxial growth 방법 등이 있지만, 대 면적화가 어렵거나 구조적 결함이 큰 문제점이 있다. 반면, 탄화수소(hydrocarbon)를 탄소 공급원으로 하는 열화학 기상 증착법(Thermal chemical vapor deposition, TCVD)은 구조적 결함이 상대적으로 적으면서 대 면적화가 가능하다는 이점 때문에 최근 가장 많이 이용되고 있는 방법이다. TCVD를 이용, 니켈, 몰리브덴, 금, 코발트 등의 금속에서 그래핀 합성연구가 보고되었지만, 대부분 수 층(fewlayer)의 그래핀이 합성되었다. 하지만, 구리 촉매를 이용하는 것이 단층 그래핀 합성에 매우 효율적이라는 연구결과가 보고되었다. 구리의 경우, 낮은 탄소융해도(solubility of carbon) 때문에 표면에서 self limiting 과정을 통하여 단층 그래핀이 합성된다. 그러나 단층 그래핀 일지라도 면저항(sheet resistance)이 매우 높고, 이론적 계산값에 비해 전자이동도(electron mobility)가 낮게 측정된다. 이러한 원인은 구조적 결함에서 기인된 것으로써 산업으로의 응용을 어렵게 만들기 때문에 양질의 단층 그래핀 합성연구는 필수적이다[1,2]. 본 연구에서는 TCVD를 이용하여 구리 포일(25 ${\mu}m$, Alfa Aeser) 위에 메탄가스를 탄소공급원으로 하여 수소를 함께 주입하고, 메탄가스의 양과 합성시간, 열처리 시간을 조절하면서 균일한 단층 그래핀을 합성하였다. 합성된 그래핀을 $SiO_2$ (300 nm)기판위에 전사(transfer)후 라만 분광법(raman spectroscopy)과 광학 현미경(optical microscope)을 통하여 분석하였다. 그 결과, 열처리 시간이 증가할수록 촉매로 사용된 구리 포일의 grain size가 커짐을 확인하였으며, 구리 포일 위에 합성된 그래핀의 grain size는, 구리 포일의 grain size에 의존하여 커짐을 확인하였다. 또한 동일한 grain 내의 그래핀은 균일한 층으로 합성되었다. 이는 기계적 박리법, RGO 방법, epitaxial growth 방법으로 얻은 그래핀과 비교하여 매우 뛰어난 결정성을 지님이 확인되었다. 본 연구를 통하여 면적이 넓으면서도 결정성이 매우 뛰어난 양질의 단층 그래핀 합성 방법을 확립하였다.

• Journal of Conservation Science
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• v.33 no.5
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• pp.363-370
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• 2017

The aim of this study was to obtain information about two early-20th Century clothes, for which the "National Memorial Museum of Forced Mobilization under Japanese Occupation" has sought to receive preservation treatment. Optical microscopes and a scanning electron microscope were used to investigate the weaving of the clothes, and Fourier transform infrared spectroscopy(FT-IR) was used to investigate the fibers. Cloth A is believed to be a Japanese half sleeved inner wear(Hanjuban) used by women. Cloth B is believed to be working clothing that was checked by an Osaka plant. This was verified by a book written by the Japanese army. Both of the clothes were made mostly from cotton, although the inner wear also used viscose rayon on the neck collar. The button on the working wear was made of urea formaldehyde resin, an early precursor to plastic.

• Proceedings of the Korean Radioactive Waste Society Conference
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• 2005.06a
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• pp.129-136
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• 2005

There should not be ion exchange resin particles in S/G sludge. The suspicious spherical resin particles observed in S/G sludge sample were characterized for particle size distribution under optical microscope using the micro-technique, for element analysis by the electron probe micro analysis (EPMA), and for molecular identification by the IR spectroscopy The particle sizes are distributed from 1 to 200 ${\mu}m$ for the sludge, while 40 to 500 ${\mu}m$ for the spherical resin particles. The results of the elemental analysis showed different major impurities: Si, Al, Mn, Cr, Ni, Zn and Ti for the sludge particles, while Si, Cu, Zn for the spherical resin particles. However, both particles contain Fe as a matrix of hematite ($Fe_{3}O_4$). IR spectrum of the spherical particles was quite different from that of ion exchange resins used in S/G system. These results indicate that the spherical particles are not related to ion exchange resin particles and formed by the process of the sludge formation.

• Journal of the Korean institute of surface engineering
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• v.46 no.2
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• pp.68-74
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• 2013

For the coating of diamond films on WC-Co tools, a buffer interlayer is needed because Co catalyzes diamond into graphite. W and Ti were chosen as candidate interlayer materials to prevent the diffusion of Co during diamond deposition. W or Ti interlayer of $1{\mu}m$ thickness was deposited on WC-Co substrate under Ar in a DC magnetron sputter. After seeding treatment of the interlayer-deposited specimens in an ultrasonic bath containing nanometer diamond powders, $2{\mu}m$ thick nanocrystalline diamond (NCD) films were deposited at $600^{\circ}C$ over the metal layers in a 2.45 GHz microwave plasma CVD system. The cross-sectional morphology of films was observed by FESEM. X-ray diffraction and visual Raman spectroscopy were used to confirm the NCD crystal structure. Micro hardness was measured by nano-indenter. The coefficient of friction (COF) was measured by tribology test using ball on disk method. After tribology test, wear tracks were examined by optical microscope and alpha step profiler. Rockwell C indentation test was performed to characterize the adhesion between films and substrate. Ti and W were found good interlayer materials to act as Co diffusion barriers and diamond nucleation layers. The COFs on NCD films with W or Ti interlayer were measured as less than 0.1 whereas that on bare WC-Co was 0.6~1.0. However, W interlayer exhibited better results than Ti in terms of the adhesion to WC-Co substrate and to NCD film. This result is believed to be due to smaller difference in the coefficients of thermal expansion of the related films in the case of W interlayer than Ti one. By varying the thickness of W interlayer as 1, 2, and $4{\mu}m$ with a fixed $2{\mu}m$ thick NCD film, no difference in COF and wear behavior but a significant change in adhesion was observed. It was shown that the thicker the interlayer, the stronger the adhesion. It is suggested that thicker W interlayer is more effective in relieving the residual stress of NCD film during cooling after deposition and results in stronger adhesion.

• Journal of the Korea Society of Computer and Information
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• v.18 no.3
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• pp.107-118
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• 2013

In this paper, we developed the semiconductor monitoring system for the etching process. Around the world, expert companies are competing fiercely since the semiconductor industry is a leading value-added industry that produces the essential components of electronic products. As a result, many researches have been conducted in order to improve the quality, productivity, and characteristics of semiconductor products. Process monitoring techniques has an important role to give an equivalent quality and productivity to produce semiconductor. In fact, since the etching process to form a semiconductor circuit causes great damage to the semiconductors, it is very necessary to develop a system for monitoring the process. The proposed monitoring system is mainly focused on the dry etching process using plasma and it provides the detailed observation, analysis and feedback to managers. It has the functionality of setting scenarios to match the process control automatically. In addition, it maximizes the efficiency of process automation. The result can be immediately reflected to the system since it performs real-time monitoring. UI (User Interface) provides managers with diagnosis of the current state in the process. The monitoring system has diverse functionalities to control the process according to the scenario written in advance, to stop the process efficiently and finally to increase production efficiency.

• Korean Journal of Materials Research
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• v.23 no.3
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• pp.155-160
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• 2013

ZnO thin films co-doped with Mg and Ga (MxGyZzO, x + y + z = 1, x = 0.05, y = 0.02 and z = 0.93) were prepared on glass substrates by RF magnetron sputtering with different sputtering powers ranging from 100W to 200W at a substrate temperature of $350^{\circ}C$. The effects of the sputtering power on the structural, morphological, electrical, and optical properties of MGZO thin films were investigated. The X-ray diffraction patterns showed that all the MGZO thin films were grown as a hexagonal wurtzite phase with the preferred orientation on the c-axis without secondary phases such as MgO, $Ga_2O_3$, or $ZnGa_2O_4$. The intensity of the diffraction peak from the (0002) plane of the MGZO thin films was enhanced as the sputtering power increased. The (0002) peak positions of the MGZO thin films was shifted toward, a high diffraction angle as the sputtering power increased. Cross-sectional field emission scanning electron microscopy images of the MGZO thin films showed that all of these films had a columnar structure and their thickness increased with an increase in the sputtering power. MGZO thin film deposited at the sputtering power of 200W showed the best electrical characteristics in terms of the carrier concentration ($4.71{\times}10^{20}cm^{-3}$), charge carrier mobility ($10.2cm^2V^{-1}s^{-1}$) and a minimum resistivity ($1.3{\times}10^{-3}{\Omega}cm$). A UV-visible spectroscopy assessment showed that the MGZO thin films had high transmittance of more than 80 % in the visible region and that the absorption edges of MGZO thin films were very sharp and shifted toward the higher wavelength side, from 270 nm to 340 nm, with an increase in the sputtering power. The band-gap energy of MGZO thin films was widened from 3.74 eV to 3.92 eV with the change in the sputtering power.

• Journal of Korean Ophthalmic Optics Society
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• v.5 no.2
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• pp.167-173
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• 2000

Four glasses of $B_2O_3-Bi_2O_3-PbO-SiO_2$ (BBPS) system were prepared by melting the appropriate amounts of reagent grade oxides of $B_2O_3$, $Bi_2O_3$, PbO, and $SiO_2$ in an open crucible. The differential thermal analysis showed crystallization temperature decreased with increasing $Bi_2O_3$ or PbO content in the sample. The structures of glasses system were studied using scanning electron microscopy and Fourier transform-Infra red (FT-IR) spectroscopy. The UV cut-off and refractive index were found to be sensitive to the $Pb^{+2}$ and $Bi^{+3}$ content in the glasses. The behavior of the IR spectra of the glasses in the BP series was consistent with a role of $Bi_2O_3$ as a network former. In the BP series of glasses, the result of IR spectrum indicated that PbO behaved as a network former.