• Journal of Animal Environmental Science
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• v.18 no.3
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• pp.257-266
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• 2012

Near infrared reflectance spectroscopy (NIRS) has become increasingly used as a rapid, accurate method of evaluating some chemical constituents in cereal and dired animal forages. Analysis of forage quality by NIRS usually involves dry grinding samples. Costs might be reduced if samples could be analyzed without drying or grinding. The objective of this study was to investigate effect of sample preparations on prediction ability of chemical composition and fermentation parameter for Italian ryegrass silages by NIRS. A population of 147 Italian ryegrass silages representing a wide range in chemical parameters were used in this investigation. Samples were scanned at 1nm intervals over the wavelength range 680-2500 nm and the optical data recorded as log 1/Reflectance (log 1/R) and scanned in oven-dried grinding and fresh ungrinding condition. The spectral data were regressed against a range of chemical parameters using partial least squares (PLS) multivariate analysis in conjunction with four spectral math treatments to reduced the effect of extraneous noise. The optimum calibrations were selected on the basis of minimizing the standard error of cross validation (SECV) and maximizing the correlation coefficient of cross validation (${R^2}_{CV}$). The results of this study show that NIRS predicted the chemical parameters with high degree of accuracy in oven-dried grinding treatment except for moisture contents. Prediction accuracy of the moisture contents was better for fresh ungrinding treatment (SECV 1.37%, $R^2$ 0.96) than for oven-dried grinding treatments (SECV 4.31%, $R^2$ 0.68). Although the statistical indexes for accuracy of the prediction were the lower in fresh ungrinding treatment, fresh treatment may be acceptable when processing is costly or when some changes in component due to the processing are expected. Results of this experiment showed the possibility of NIRS method to predict the chemical composition and fermentation parameter of Italian ryegrass silages as routine analysis method in feeding value evaluation and for farmer advice.

• The Bulletin of The Korean Astronomical Society
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• v.40 no.1
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• pp.54.3-54.3
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• 2015

To probe the star formation in local and early Universe, the NISS with a capability of imaging spectroscopy in the near-infrared is being developed by KASI. The main scientific targets are nearby galaxies, galaxy clusters, star-forming regions and low background regions. The off-axis optical design of the NISS with 15cm aperture was optimized to obtain a wide field of view (FoV) of $2deg.{\times}2deg.$ as well as a wide spectral coverage from 0.9 to $3.8{\mu}m$. The opto-mechanical structure was designed to be safe enough to endure in both the launching condition and the space environment. The dewar will operate $1k{\times}1k$ infrared sensor at 80K stage. The NISS will be launched in 2017 and explore the large areal near-infrared sky up to $200deg.^2$ in order to get both spatial and spectral information for astronomical objects. As an extension of the NISS, KASI is planning to participate in a new small space mission together with NASA. The promising candidate, SPHEREx (Spectro-Photometer for the History of the Universe Epoch of Reionization, and Ices Explorer) is an all-sky survey satellite designed to reveal the origin of the Universe and water in the planetary systems and to explore the evolution of galaxies. Though the survey concept is similar to that of the NISS, the SPHEREx will perform the first near-infrared all-sky imaging spectroscopic survey with the wider spectral range from 0.7 to $5{\mu}m$ and the wider FoV of $3.5deg.{\times}7deg.$ Here, we report the current status of the NISS and introduce new mission for the near-infrared imaging spectroscopic survey.

• Journal of the Korea Academia-Industrial cooperation Society
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• v.21 no.6
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• pp.204-211
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• 2020

The high-velocity oxy-fuel (HVOF) thermal spraying coating technique has been considered a promising replacement for traditional electrolytic hard chrome plating (EHC), which caused environmental pollution and lung cancer due to toxic Cr⁶⁺. In this paper, two types of cermet coatings were prepared by HVOF spraying: WC-CoCr and WC-CrC-Ni coatings. The produced coatings were analyzed extensively in terms of the micro-hardness, porosity, crystalline phase and microstructure using a hardness tester, optical microscopy, X-ray diffraction, and scanning electron microscopy (including energy dispersed spectroscopy (EDS)), respectively. The wear and friction behaviors of the coatings were evaluated comparatively by reciprocating sliding wear tests at 25 ℃, 250 ℃, and 450 ℃. The results revealed correlations among the microstructures, metallic binder matrixes, porosities, and wear performance of the coatings. For example, WC-CoCr coatings showed better sliding wear resistance than WC-CrC-Ni coatings, regardless of the test temperature due to the more homogeneous microstructure, Co-rich, Cr-rich metallic binder matrix, and lower porosity.

• Proceedings of the Korean Vacuum Society Conference
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• 2016.02a
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• pp.93-93
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• 2016

Large scale integrated circuits (LSIs) has been improved by the shrinkage of the circuit dimensions. The smaller chip sizes and increase in circuit density require the miniaturization of the line-width and space between metal interconnections. Therefore, an extreme precise control of the critical dimension and pattern profile is necessary to fabricate next generation nano-electronics devices. The pattern profile control of plasma etching with an accuracy of sub-nanometer must be achieved. To realize the etching process which achieves the problem, understanding of the etching mechanism and precise control of the process based on the real-time monitoring of internal plasma parameters such as etching species density, surface temperature of substrate, etc. are very important. For instance, it is known that the etched profiles of organic low dielectric (low-k) films are sensitive to the substrate temperature and density ratio of H and N atoms in the H2/N2 plasma [1]. In this study, we introduced a feedback control of actual substrate temperature and radical density ratio monitored in real time. And then the dependence of etch rates and profiles of organic films have been evaluated based on the substrate temperatures. In this study, organic low-k films were etched by a dual frequency capacitively coupled plasma employing the mixture of H2/N2 gases. A 100-MHz power was supplied to an upper electrode for plasma generation. The Si substrate was electrostatically chucked to a lower electrode biased by supplying a 2-MHz power. To investigate the effects of H and N radical on the etching profile of organic low-k films, absolute H and N atom densities were measured by vacuum ultraviolet absorption spectroscopy [2]. Moreover, using the optical fiber-type low-coherence interferometer [3], substrate temperature has been measured in real time during etching process. From the measurement results, the temperature raised rapidly just after plasma ignition and was gradually saturated. The temporal change of substrate temperature is a crucial issue to control of surface reactions of reactive species. Therefore, by the intervals of on-off of the plasma discharge, the substrate temperature was maintained within ${\pm}1.5^{\circ}C$ from the set value. As a result, the temperatures were kept within $3^{\circ}C$ during the etching process. Then, we etched organic films with line-and-space pattern using this system. The cross-sections of the organic films etched for 50 s with the substrate temperatures at $20^{\circ}C$ and $100^{\circ}C$ were observed by SEM. From the results, they were different in the sidewall profile. It suggests that the reactions on the sidewalls changed according to the substrate temperature. The precise substrate temperature control method with real-time temperature monitoring and intermittent plasma generation was suggested to contribute on realization of fine pattern etching.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2009.06a
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• pp.412-412
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• 2009

Carbon-based nano materials have a significant effect on various fields such as physics, chemistry and material science. Therefore carbon nano materials have been investigated by many scientists and engineers. Especially, since graphene, 2-dimemsonal carbon nanostructure, was experimentally discovered graphene has been tremendously attracted by both theoretical and experimental groups due to their extraordinary electrical, chemical and mechanical properties. Electrical conductivity of graphene is about ten times to that of silicon-based material and independent of temperature. At the same time silicon-based semiconductors encountered to limitation in size reduction, graphene is a strong candidate substituting for silicon-based semiconductor. But there are many limitations on fabricating large-scale graphene sheets (GS) without any defect and controlling chirality of edges. Many scientists applied micromechanical cleavage method from graphite and a SiC decomposition method to the fabrication of GS. However these methods are on the basic stage and have many drawbacks. Thereupon, our group fabricated GS through Thermo-electrical Pulse Induced Evaporation (TPIE) motivated by arc-discharge and field ion microscopy. This method is based on interaction of electrical pulse evaporation and thermal evaporation and is useful to produce not only graphene but also various carbon-based nanostructures with feeble pulse and at low temperature. On fabricating GS procedure, we could recognize distinguishable conditions (electrical pulse, temperature, etc.) to form a variety of carbon nanostructures. In this presentation, we will show the structural properties of OS by synthesized TPIE. Transmission Electron Microscopy (TEM) and Optical Microscopy (OM) observations were performed to view structural characteristics such as crystallinity. Moreover, we confirmed number of layers of GS by Atomic Force Microscopy (AFM) and Raman spectroscopy. Also, we used a probe station, in order to measure the electrical properties such as sheet resistance, resistivity, mobility of OS. We believe our method (TPIE) is a powerful bottom-up approach to synthesize and modify carbon-based nanostructures.

• The Bulletin of The Korean Astronomical Society
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• v.40 no.2
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• pp.39.3-40
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• 2015

The NISS (Near-infrared Imaging Spectrometer for Star formation history) onboard NEXTSat-1 is the near-infrared instrument optimized to the first small satellite of NEXTSat series. The capability of both imaging and low spectral resolution spectroscopy in the near-infrared range is a unique function of the NISS. The major scientific mission is to study the cosmic star formation history in local and distant universe. For those purposes, the main targets are nearby galaxies, galaxy clusters, star-forming regions and low background regions. The off-axis optical design of the NISS with two linear variable filters is optimized to have a wide field of view ($2deg.{\times}2deg.$) as well as the wide wavelength range from 0.95 to $3.8{\mu}m$. The mechanical structure is considered to endure the launching condition as well as the space environment. The dewar inside the telescope is designed to operate the infrared detector at 80K stage. From the thermal analysis, we confirmed that the telescope and the dewar can be cooled down to around 200K and 80K, respectively in order to reduce the large amount of thermal noise. The stray light analysis is shown that a light outside a field of view can be reduced below 1%. After the fabrications of the parts of engineering qualification model (EQM), the NSS EQM was successfully assembled and integrated into the satellite. To verify operations of the satellite in space, the space environment tests such as the vibration, shock and thermal-vacuum test were performed. Here, we report the results of the critical design review for the NISS.

• Journal of the Korean Vacuum Society
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• v.15 no.1
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• pp.89-96
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• 2006

Recent ULSI and multilevel structure trends in microelectronic devices minimize the line width down to less than $0.25{\mu}m$, which results in high current densities in thin film interconnections. Under high current densities, an EM(electromigration) induced failure becomes one of the critical problems in a microelectronic device. This study is to improve thin film interconnection materials by investigating the EM characteristics in Ag, Cu, Au, and Al thin films, etc. EM resistance characteristics of Ag, Cu, Au, and Al thin films with high electrical conductivities were investigated by measuring the activation energies from the TTF (Time-to-Failure) analysis. Optical microscope and XPS (X-ray photoelectron spectroscopy) analysis were used for the failure analysis in thin films. Cu thin films showed relatively high activation energy for the electromigration. Thus Cu thin films may be potentially good candidate for the next choice of advanced thin film interconnection materials where high current density and good EM resitance are required. Passivated Al thin films showed the increased MTF(Mean-time-to-Failure) values, that is, the increased EM resistance characteristics due to the dielectric passivation effects at the interface between the dielectric overlayer and the thin film interconnection materials.

• Korean Journal of Materials Research
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• v.17 no.12
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• pp.642-647
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• 2007

We investigated dry etching of acrylic (PMMA) in $O_2/N_2$ plasmas using a multi-layers electrode reactive ion etching (RIE) system. The multi-layers electrode RIE system had an electrode (or a chuck) consisted of 4 individual layers in a series. The diameter of the electrodes was 150 mm. The etch process parameters we studied were both applied RIE chuck power on the electrodes and % $O_2$ composition in the $N_2/O_2$ plasma mixtures. In details, the RIE chuck power was changed from 75 to 200 W.% $O_2$ in the plasmas was varied from 0 to 100% at the fixed total gas flow rates of 20 sccm. The etch results of acrylic in the multilayers electrode RIE system were characterized in terms of negatively induced dc bias on the electrode, etch rates and RMS surface roughness. Etch rate of acrylic was increased more than twice from about $0.2{\mu}m/min$ to over $0.4{\mu}m/min$ when RIE chuck power was changed from 75 to 200 W. 1 sigma uniformity of etch rate variation of acrylic on the 4 layers electrode was slightly increased from 2.3 to 3.2% when RIE chuck power was changed from 75 to 200 W at the fixed etch condition of 16 sccm $O_2/4\;sccm\;N_2$ gas flow and 100 mTorr chamber pressure. Surface morphology was also investigated using both a surface profilometry and scanning electron microscopy (SEM). The RMS roughness of etched acrylic surface was strongly affected by % $O_2$ composition in the $O_2/N_2$ plasmas. However, RIE chuck power changes hardly affected the roughness results in the range of 75-200 W. During etching experiment, Optical Emission Spectroscopy (OES) data was taken and we found both $N_2$ peak (354.27 nm) and $O_2$ peak (777.54 nm). The preliminarily overall results showed that the multi-layers electrode concept could be successfully utilized for high volume reactive ion etching of acrylic in the future.

• Journal of Korea Technical Association of The Pulp and Paper Industry
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• v.44 no.5
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• pp.72-79
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• 2012

In this study, to understand the aging factor and mechanism in different partitions of the beeswax-treated volumes, the duplicated beeswax-treated volume was artificially aged at $80^{\circ}C$ of temperature and 65% of relative humidity and then a physical and optical properties of an aged volumes was analyzed. Also, the degraded components of the beeswax samples isolated from different partitions of aged volumes was measured using a gas chromatography/mass spectroscopy (GC/MS). In results, the surface of beeswax-treated volume which is primarily affected by a main aging factors such as light, oxygen, moisture was more deteriorated than the inside of that volume. However, unlike inside of the book volume which was made from paper, the inside of beeswax-treated volume wax was also considerably deteriorated. The inside of the beeswax-treated volume is largely unaffected by the oxygen and humidity during aging due to the water repellency and the air permeation resistance of beeswax. Therefore, it is confirmed that aging factors and mechanisms in the inside of the volume are different from thats of the outside of the volume. This fact was also verified by the results of GC/MS analysis of an beeswax samples which was sampled from different partitions of aged volumes. As result as GC/MS analysis of the beeswax extracted from the outside of the aged volume, the low molecular compounds with a carbon length of $C_9-C_{20}$ (fatty acid, etc) were increased and the compounds with a carbon length of above $C_{34}$ (ester, etc) were also increased. But the compounds with a chain length of $C_{21}-C_{36}$ (hydrocarbon, alcohol, etc) were decreased. In case of the aged beeswax of inside, the low molecular compounds with a carbon length of $C_9-C_{20}$ (fatty acid, etc) and the compounds with a chain length of $C_{21}-C_{36}$ (hydrocarbon, alcohol, etc) were increased. While, the compounds with a carbon length of above $C_{34}$ (ester, etc) were decreased.

• Proceedings of the Korean Vacuum Society Conference
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• 2013.02a
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• pp.642-642
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• 2013

Graphene, two dimensional single layer of carbon atoms, has tremendous attention due to its superior property such as high electron mobility, high thermal conductivity and optical transparency. Especially, chemical vapor deposition (CVD) grown graphene has been used as a promising material for high quality and large-scale graphene film. Unfortunately, although CVD-grown graphene has strong advantages, application of the CVD-grown graphene is limited due to ineffective transfer process that delivers the graphene onto a desired substrate by using polymer support layer such as PMMA(polymethyl methacrylate). The transferred CVD-grown graphene has serious drawback due to remaining polymeric residues generated during transfer process, which induces the poor physical and electrical characteristics by a p-doping effect and impurity scattering. To solve such issue incurred during polymer transfer process of CVD-grown graphene, various approaches including thermal annealing, chemical cleaning, mechanical cleaning have been tried but were not successful in getting rid of polymeric residues. On the other hand, lithographical patterning of graphene is an essential step in any form of microelectronic processing and most of conventional lithographic techniques employ photoresist for the definition of graphene patterns on substrates. But, application of photoresist is undesirable because of the presence of residual polymers that contaminate the graphene surface consistent with the effects generated during transfer process. Therefore, in order to fully utilize the excellent properties of CVD-grown graphene, new approach of transfer and patterning techniques which can avoid polymeric residue problem needs to be developed. In this work, we carried out transfer and patterning process simultaneously with no polymeric residue by using a metal etch mask. The patterned thin gold layer was deposited on CVD-grown graphene instead of photoresists in order to make much cleaner and smoother surface and then transferred onto a desired substrate with PMMA, which does not directly contact with graphene surface. We compare the surface properties and patterning morphology of graphene by scanning electron microscopy (SEM), atomic force microscopy(AFM) and Raman spectroscopy. Comparison with the effect of residual polymer and metal on performance of graphene FET will be discussed.