• Proceedings of the KIEE Conference
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• 2001.11a
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• pp.270-273
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• 2001

In this paper, some of optical current transformers and optical potential transformers for extra high voltage system are introduced. The optical current transformer and optical potential transformer will be adopted in the near future, because of increasing demands of high accuracy and good reliability of current transformer and potential transformer. The application cases of optical current transformers and optical potential transformers are also introduced.

• Proceedings of the KIEE Conference
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• 2002.11a
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• pp.215-218
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• 2002

In this paper some of optical current transformers and optical potential transformers for extra high voltage system are introduced. The optical current transformer and optical potential transformer will be adopted in the near future, because of increasing demands of high accuracy and good reliability of current transformer and potential transformer. The application cases of optical current transformers and optical potential transformers are also introduced.

• KSII Transactions on Internet and Information Systems (TIIS)
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• v.15 no.3
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• pp.1030-1050
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• 2021

The edges with "bridge characteristic" play the role of connecting the communication between regions in power optical cable network. To solve the problem of mining edges with "bridge characteristic" in provincial power optical cable network, the complex power optical cable network model is constructed. Firstly, to measure the generated potential energy of all nodes in n-level neighborhood local structure for one edge, the n-level neighborhood local structure topological potential is designed. And the minimum connected chain attenuation is designed to measure the attenuation degree caused by substituted edges. On the basis of that, the minimum connected chain attenuation topological potential based measurement is designed. By using the designed measurement, a bridge-edges mining algorithm is proposed to mine edges with "bridge characteristic". The experiments are conducted on the physical topology of the power optical cable network in Jilin Province. Compared with that of other three typical methods, the network efficiency and connectivity of the proposed method are decreased by 3.58% and 28.79% on average respectively. And the proposed method can not only mine optical cable connection with typical "bridge characteristic" but also can mine optical cables without obvious characteristics of city or voltage, but it have "bridge characteristic" in the topology structure.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2000.05b
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• pp.327-330
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• 2000

The scanning Maxwell-stress microscopy (SMM) is a dynamic noncontact electric force microscopy that allows simultaneous access to the electrical properties of molecular system such as surface potential, surface charge, dielectric constant and conductivity along with the topography. The Scanning near-field optical / atomic force microscopy (SNOAM) is a new tool for surface imaging which was introduced as one application of the atomic force microscope (AFM). Operated with non-contact forces between the optical fiber and sample as well as equipped with the piezoscanners, the instrument reports on surface topology without damaging or modifying the surface for measuring of optical characteristic in the films. We report our recent results of its application to nanoscopic study of domain structures and electrical functionality in organic thin films by SMM. Furthermore, we have illustrated the SNOAM image in obtaining the merocyanine dye films as well as the optical image.

• Proceedings of the Optical Society of Korea Conference
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• 2001.02a
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• pp.48-49
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• 2001

GaN는 wurzite structure를 갖는 wide bandgap III-V족 반도체로서, 청색 반도체 laser diode (LD), light emitting diode (LED)등으로 응용되는 물질이다. InGaN quantum well은 GaN계의 청색 LD, LED 구조에서 활성층으로 사용되기 때문에 이에 대한 광학적 연구가 활발하다. InGaN는 GaN위에 성장하면 strain에 의해 piezoelectric 효과가 크게 나타나는 것으로 알려져 있다. 이러한 piezoelectric potential에 의해 외부에서 voltage가 가해지지 않은 상황에서도 InGaN quantum well내의 electron, hole의 wave function이 비대칭 potential의 영향을 받게된다. (중략)

• Journal of the Optical Society of Korea
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• v.5 no.3
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• pp.110-116
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• 2001

Recently observed dark resonance phenomena is solids are reviewed and discussed for potential applications to high-resolution coherence spectroscopy. in an inhomogeneously broadened system, a new type of high-resolution spectroscopy based on electromagnetically induced transparency is demonstrated.

• ETRI Journal
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• v.23 no.3
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• pp.106-110
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• 2001

Subpicosecond all-optical switching method based on the simultaneous two-photon coherence exchange is proposed and numerically demonstrated. The optical switching mechanism is based on the optical field induced dark resonance swapping via nondegenerate four-wave mixing processes. For potential applications of ultrafast all-optical switching in fiber-optic communications, 10-THz channel number independent quantum router is discussed.

• JSTS:Journal of Semiconductor Technology and Science
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• v.11 no.1
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• pp.40-50
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• 2011

A two-dimensional (2D) analytical model for the potential distribution and threshold voltage of short-channel ion-implanted GaAs MESFETs operating in the sub-threshold regime has been presented. A double-integrable Gaussian-like function has been assumed as the doping distribution profile in the vertical direction of the channel. The Schottky gate has been assumed to be semi-transparent through which optical radiation is coupled into the device. The 2D potential distribution in the channel of the short-channel device has been obtained by solving the 2D Poisson's equation by using suitable boundary conditions. The effects of excess carrier generation due to the incident optical radiation in channel region have been included in the Poisson's equation to study the optical effects on the device. The potential function has been utilized to model the threshold voltage of the device under dark and illuminated conditions. The proposed model has been verified by comparing the theoretically predicted results with simulated data obtained by using the commercially available $ATLAS^{TM}$ 2D device simulator.

• Bulletin of the Korean Chemical Society
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• v.30 no.4
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• pp.857-862
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• 2009

We model lattice-mismatched group III-V semiconductor $In_{x}Ga_{1-x}$ alloys with the three-parameter anharmonic Kirkwood-Keating potential, which includes realistic distortion effect by introducing anharmonicity. Although the potential parameters were determined based on optical properties of the binary parent alloys InAs and GaAs, simulated dielectric functions, reflectance, and Raman spectra of alloys agree excellently with experimental data for any arbitrary atomic composition. For a wide range of atomic composition, InAs- and GaAs-bond retain their respective properties of binary parent crystals despite lattice and charge mismatch. It implies that use of the anharmonic Kirkwood-Keating potential may provide an optimal model system to investigate diverse and unique optical properties of quantum dot heterostructures by circumventing potential parameter searches for particular local structures.

• Proceedings of the Optical Society of Korea Conference
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• 2004.07a
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• pp.28-29
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• 2004

Optical wireless mobile communications have the potential to provide wide bandwidth and security . We have proposed and designed the 2-dimensional tracking optical receiver systems for optical wireless mobile communication. The receiver system consist of 4${\times}$4 photodiode array can receive optical signal from the transmitter. The room size is 5${\times}$5m$^2$ and the room height is 3m.