• 제목/요약/키워드: Optical pattern

검색결과 1,134건 처리시간 0.028초

공명초음파분광법에 의한 광컨넥터용 결합소자의 비파괴검사 (Nondestructive Test of Optical Connector by Resonant Ultrasound Spectroscopy Method)

  • 김성훈;이길성;김동식;김영남;정상화;양인영
    • 한국자동차공학회논문집
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    • 제12권6호
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    • pp.143-150
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    • 2004
  • In this paper, resonant ultrasound spectroscopy(RUS) was used to determine the natural frequency of a ceramic ferrule and a ball lens. The ceramic ferrules are cylinderical shape with $\phi$ 2.56mm diameter and l0mm in length. Crack lengths of these ferrules are 10.40$\mu$m, 21.18$\mu$m and 32.35$\mu$m. The spherical ball lens was made of BK-7 glass, one's diameter in 2mm and 5mm. RUS system is consisted of spectrum analyzer, power amplifier, PZT sensor and support frame. The principle of RUS is that the mechanical resonant frequency of the materials depends on density and the coefficient of elasticity. Rus system is based on that given resonant frequency of the materials can be represented by the function of density and the coefficient of elasticity, and it is applied to excite specimen and to inspect the difference of natural frequency pattern between acceptable specimen and defective ones. Defect evaluation by RUS are performed to investigate the natural frequency measure of ferrule and ball lens.

기울어진 GaAs(100) 기판 위에 성장된 InAs 박막 특성에 대한 As BEP 효과 (As BEP Effects on the Properties of InAs Thin Films Grown on Tilted GaAs(100) Substrate)

  • 김민수;임재영
    • 한국표면공학회지
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    • 제43권4호
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    • pp.176-179
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    • 2010
  • The InAs thin films were grown on GaAs(100) substrate with $2^{\circ}C$ tilted toward [$0\bar{1}\bar{1}$] with different As beam equivalent pressure (BEP) by using molecular beam epitaxy. Growth temperature and thickness of the InAs thin films were $480^{\circ}C$ and 0.5 ${\mu}m$, respectively. We studied the relation between the As BEP and the properties of InAs thin films. The properties of InAs thin films were observed by reflection high-energy electron diffraction (RHEED), optical microscope, and Hall effect. The growth, monitored by RHEED, was produced through an initial 2D (2-dimensional) nucleation mode which was followed by a period of 3D (3-dimensional) island growth mode. Then, the 2D growth recovered after a few minutes and the streak RHEED pattern remained clear till the end of growth. The crystal quality of InAs thin films is dependent strongly on the As BEP. When the As BEP is $3.6{\times}10^{-6}$ Torr, the InAs thin film has a high electron mobility of 10,952 $cm^2/Vs$ at room temperature.

유기물 첨가제가 마이크로 패턴 구리 전주 도금에 미치는 영향 연구 (Investigation on the Effect of Organic Additives on the Electroformed Cu Deposits with Micro-patterns)

  • 이주열;김만;이규환;임성봉;이종일
    • 한국표면공학회지
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    • 제43권1호
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    • pp.1-6
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    • 2010
  • The effect of organic additives, 1-(3-sulfoproyl)-2-vinylpyridineium hydroxide (SVH) and thiourea (TU), on the precision copper electrodeposition was investigated with optical, electrochemical and x-ray diffraction techniques. It was found that SVH played a r ole as a n accelerator and TU as an i nhibitor during the electroreduction of cupric ions in acidic Cu electroplating solution. Through electrochemical measurements, TU showed more strong interaction with cupric ions than SVH and dominated overall Cu electroplating process when both additives were present in the solution. In the case of three dimensional Cu electrodeposition on the 20 ${\mu}m$-patterned Ni substrates, SVH controlled the upright growth of Cu electrodeposits and so determined its flatness, while TU prohibited the lateral spreading of Cu in the course of pulse-reverse pulse current adaptation. With microscopic observation, we obtained the optimum organic additives composition, that is, 100 ppm SVH and 200 ppm TU during the current pulsation.

잡음과 회전에 강인한 SIFT 기반 PCB 영상 정렬 알고리즘 개발 (Robust PCB Image Alignment using SIFT)

  • 김준철;최학남;박은수;최효훈;김학일
    • 제어로봇시스템학회논문지
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    • 제16권7호
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    • pp.695-702
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    • 2010
  • This paper presents an image alignment algorithm for application of AOI (Automatic Optical Inspection) based on SIFT. Since the correspondences result using SIFT descriptor have many wrong points for aligning, this paper modified and classified those points by five measures called the CCFMR (Cascade Classifier for False Matching Reduction) After reduced the false matching, rotation and translation are estimated by point selection method. Experimental results show that the proposed method has fewer fail matching in comparison to commercial software MIL 8.0, and specially, less than twice with the well-controlled environment’s data sets (such as AOI system). The rotation and translation accuracy is robust than MIL in the noise data sets, but the errors are higher than in a rotation variation data sets although that also meaningful result in the practical system. In addition to, the computational time consumed by the proposed method is four times shorter than that by MIL which increases linearly according to noise.

형광과 여기광을 공간적으로 분리하는 바이오칩용 소형 형광측정시스템 (Miniature Biochip Fluorescence Detection System with Spatial Separation of Fluorescence from Excitation Light)

  • 김호성;김용권;박주한;이국녕;최재호
    • 대한전기학회논문지:전기물성ㆍ응용부문C
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    • 제54권8호
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    • pp.378-383
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    • 2005
  • We report the development of miniature fluorescence detection systems that employ miniature prism, mirrors and low coat CCD camera to detect the fluorescence emitted from 40 fluorescently-labeled protein patterns without scanner. This kind of miniature fluorescence detection system can be used in point of care. We introduce two systems, one uses prism+mirror block and the other uses prism and two mirrors. A large NA microscope eyepiece and low cost CCD camera are used. We fabricated protein chip containing multi-pattern BSA labeled with Cy5, using MEMS technology and modified the surface chemically to clean and to immobilize proteins. The measurements show that the combination of prism and mirrors can homogenize elliptical excitation light over the sample with higher optical efficiency, and increase the separation between excitation and fluorescence light at the CCD to give higher signal intensity and higher signal to noise ratio. The measurements also show that protein concentrations ranging from 10 ng/ml to 1000 ng/ml can be assayed with very small error. We believe that the proposed fluorescence detection system can be refined to build a commercially valuable hand-held or miniature detection device.

패턴된 GaN 에피층 위에 ZnO 막대의 수직성장 (Growth of vertically aligned Zinc Oxide rod array on patterned Gallium Nitride epitaxial layer)

  • 최승규;이성학;장재민;김정아;정우광
    • 한국재료학회지
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    • 제17권5호
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    • pp.273-277
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    • 2007
  • Vertically aligned Zinc Oxide rod arrays were grown by the self-assembly hydrothermal process on the GaN epitaxial layer which has a same lattice structure with ZnO. Zinc nitrate and DETA solutions are used in the hydrothermal process. The $(HfO_2)$ thin film was deposited on GaN and the patterning was made by the photolithography technique. The selective growth of ZnO rod was achieved with the patterned GaN substrate. The fabricated ZnO rods are single crystal, and have grown along hexagonal c-axis direction of (002) which is the same growth orientation of GaN epitaxial layer. The density and the size of ZnO rod can be controlled by the pattern. The optical property of ordered array of vertical ZnO rods will be discussed in the present work.

Structural, Electrical and Optical Properties of ZnO Thin Films Grown at Various Plume-Substrate Angles by Pulsed Laser Deposition

  • Kim Jae-Won;Kang Hong-Seong;Lee Sang-Yeol
    • KIEE International Transactions on Electrophysics and Applications
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    • 제5C권3호
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    • pp.97-101
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    • 2005
  • ZnO thin films were grown at different plume-substrate (P-S) angles of 90$^{\circ}$ (on-axis PLD), 45$^{\circ}$ and 0$^{\circ}$ (off-axis PLD) using pulsed laser deposition. The x-ray diffraction pattern exhibiting a dominant (002) and a minor (101) peak of ZnO indicates all films were strongly c-axis oriented. By observing of (002) peak, the FWHMs of ZnO (002) peaks decreased and c-axis lattice constant approached the value of bulk ZnO as P-S angle decreased. Whereas the carrier concentration of ZnO thin film deposited at P-S angle of 90$^{\circ}$ was ~ 10$^{19}$ /cm$^{3}$, the Hall measurement of ZnO thin films deposited at P-S angles of 0$^{\circ}$ and 45$^{\circ}$ was impossible due to the decrease of the carrier concentration by the improvement of stoichiometry and crystalline quality. By decreasing P-S angle, the grain size of the films and the UV intensity investigated by photoluminescence (PL) increased and UV peak position showed red shift. The improvement of properties in ZnO thin films deposited by off-axis technique was due to the decrease of repulsive force between a substrate and the particle in plume and the relaxation of supersaturation.

CF4O2 gas 플라즈마를 이용한 폴리이미드 박막의 식각 (The Etching Characteristics of Polyimide Thin Films using CF4O2 Gas Plasma)

  • 강필승;김창일;김상기
    • 한국전기전자재료학회논문지
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    • 제15권5호
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    • pp.393-397
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    • 2002
  • Polyimide (PI) films have been studied widely as the interlayer dielectric materials due to a low dielectric constant, low water absorption, high gap-fill and planarization capability. The polyimide film was etched using inductively coupled plasma system. The etcying characteristics such as etch rate and selectivity were evaluated at different $CF_4/(CF_4+O_2)$chemistry. The maximum etch rate was 8300 ${\AA}/min$ and the selectivity of polyimide to SiO$_2$was 5.9 at $CF_4/(CF_4+O_2)$ of 0.2. Etch profile of polyimide film with an aluminum pattern was measured by a scanning electron microscopy. The vertical profile was approximately $90^{\circ}$ at $CF_4/(CF_4+O_2)$ of 0.2. As 20% $CF_4$ were added into $O_2$ plasma from the results of the optical emission spectroscopy, the radical densities of fluorine and oxygen increased with increasing $CF_4$ concentration in $CF_4/O_2$ from 0 to 20%, resulting in the increased etch rate. The surface reaction of etched PI films was investigated using x-ray photoelectron spectroscopy.

전기 수력학 인쇄공정을 이용한 실리콘 태양전지 전극용 Ni 잉크 제조 및 인쇄 공정 연구 (Electrohydrodynamic Continuous Jet Printing of Ni Ink for Crystalline Silicon Solar Cells)

  • 이영우;김지훈
    • 한국전기전자재료학회논문지
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    • 제28권9호
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    • pp.593-597
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    • 2015
  • Ni ink for electrohydrodynamic (EHD) continuous jet printing has been developed by using Ni nanoparticles mixed with conhesiveness provider. EHD continuous jet printing was used in order to realize $20{\mu}m$ pattern width. Ink stability was investigated by using Turbi-scan which monitors agglomeration and precipitation of nanoparticles in the ink for three days. The Turbi-scan results showed that the formulated Ni ink had been stable for 3 days without any indication of precipitation across the entire ink. Antireflection coating (ARC) layer in crystalline solar cell wafers was removed by laser ablation technique leading to the formation of 84 grooves where the Ni ink was printed by EHD continuous jet printing. The printability and microstructure of EHD-jet-printed Ni lines were investigated by using optical and electron microscopes. 84 Ni lines with the width less than $20{\mu}m$ were successfully printed by one-time printing without any misalignment and fill the laser-ablated ARC grooves.

주기적인 홀로그램에 입사하는 레이저빔의 크기가 주기와 유사할 때의 프라운호퍼 회절 패턴에 대한 연구 (Fraunhofer Diffraction Pattern of a Periodic Hologram When the Input Beam Size is Similar to the Period of the Hologram)

  • 고춘수;임성우;오용호
    • 한국전기전자재료학회논문지
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    • 제31권4호
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    • pp.193-197
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    • 2018
  • The ratio of the period of a diffractive element to the input beam size is a critical parameter in a diffractive beam shaper. We measured and calculated the Fraunhofer diffraction patterns of a periodic hologram with an input beam size similar to the period of the hologram. The measured intensities show very complicated patterns and are strongly dependent upon the center position of the laser beam relative to the hologram. Using a diffraction formula for a periodic hologram, we calculated the diffracted light intensities and fit them to the measured ones. The measured and calculated intensities are in good agreement even when the beam diameter of the incident laser is similar to the period of the hologram. We can therefore use this formula to estimate the output of a periodic beam shaper even under such an extreme condition.