• Journal of the Korea Institute of Information and Communication Engineering
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• v.15 no.1
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• pp.183-187
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• 2011

The polymer-stabilized blue phase liquid crystal (BPLC) cell has advantages such as sub-millisecond response time, wide viewing angle and no rubbing process for the alignment of liquid crystals. However, high operating voltage and low kerr constant of the polymer-stabilized blue phase liquid crystal deteriorate the electro-optical characteristic of the polymer-stabilized BPLC cell. In this paper, we proposed novel zig-zag electrode in cell layout and confirmed that proposed electrode shape could reduce an over 25 percent of operating voltage for BPLC cell without degradation of tranmittance by using Kerr constant simulation.

• The Transactions of the Korean Institute of Electrical Engineers C
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• v.49 no.2
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• pp.140-148
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• 2000

In this paper, using surface micromachining technology with thick photoresist and aluminum, an SLM(Spatial Light Modulator), which is applied to the fields of adaptive optics and pattern recognition system, was fabricated and the electromechanical properties of the fabricated micro SLM are measured. In order to maximize fill-factor and remove mechanical coupling between micro SLM actuators, the micro SLM is composed of three aluminum layers so that spring structure and upper electrode are placed beneath the mirror plate, and $10\times10$ each mirror plate is individually actuated. Also, the micro SLM was designed to be able to modulate phase and amplitude of incoming light in order to have a continuity of phase modulation of incoming light. In the case of amplitude and phase modulation, maximum vertical displacement is 4$\mum$, and maximum angular displacement is $\pm4.6^{\corc}$ respectively. The height difference of the fabricated mirror plate was able to be reduced to 1100A with mirror plate planarization method using negative photoresist(AZ5214). The electromechanical properties of the fabricated micro SLM were measured with the optical measurement system using He-Ne laser and PSD(position sensitive device).

• Proceedings of the Korean Society of Laser Processing Conference
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• 2005.11a
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• pp.37-41
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• 2005

When screen size of the Flat Panel Display (FPD) becomes larger, the traditional photo-lithography using photomasks and UV lamps might not be possible to make patterns on Photo Resist (PR) material due to limitation of the mask size. Though the maskless photo-lithography using UV lasers and scanners had been developed to implement large screen display, it was very slow to apply the process for mass-production systems. The laser exposure system using 405 nm semi-conductor lasers and Digital Micromirror Devices (DMD) has been developed to overcome above-mentioned problems and make more than 100 inches FPD devices. It makes very fine patterns for full HD display and exposes them very fast. The optical engines which contain DMD, Micro Lens Array (MLA) and projection lenses are designed for 10 to 50 ${\mu}m$ bitmap pattern resolutions. The test patterns for LCD and PDP displays are exposed on PR and Dry Film Resists (DFR) which are coated or laminated on some specific substrates and developed. The fabricated edges of the sample patterns are well-defined and the results are satisfied with tight manufacturing requirements.

• Journal of Ginseng Research
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• v.9 no.2
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• pp.256-263
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• 1985

In order to investigate the inferior factor of red ginseng quality, the contents of various chemical components, physico-chemical properties and arrangement state of ginseng cells were observed. Contents of total reducing sugar, reducing sugar, crude protein, crude fibre and specific gravity of inside white part of red ginseng were less than those of normal part. But differences in content of crude saponin, HPLC pattern of ginsenosides and reducing ability for DP P H(1,1-dipheny 1-2-picrylhydrazyl) between normal and inside white part of red ginseng were not found. The optical density of 1 water extract of normal part of red ginseng did not differ from that of inside white 1 part of red ginseng, but the visible and UV absorbance of acid hydrolyzate of normal red ginseng showed higher than those of inside white part of red ginseng. The differences in the internal color and tissue of normal and inside white part of red ginseng were easily found with naked eye, and by the microscopic fractography, the orangement state of ginseng cell in the inside white part of red ginseng was less dense than that in normal red ginseng.

• Korean Journal of Optics and Photonics
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• v.20 no.4
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• pp.207-210
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• 2009

A confocal technique was demonstrated for measuring the absolute value of an air gap between substrates. Since the two surfaces were in Rayleigh range of the laser focus for air gaps less than 200 nm, complete interference patterns were observed. And since interference patterns were obtained only from the area of focus, it was an advantage of this method that air gaps between multiple thin films could be measured. Stability is less than 1 nm except in the range where the interference pattern changes slowly.

• Korean Journal of Optics and Photonics
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• v.29 no.3
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• pp.104-109
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• 2018

We explain the basic principle of transformation optics, and introduce several design techniques for transformation cavities that can maintain the characteristics of whispering gallery modes (WGMs) even if the cavity is strongly deformed from a circular shape. As a method of obtaining various transformation cavities under a specific conformal mapping, we suggest a method of parallel movement of the initial cavity domain, and a method of rotating the ellipse as a cavity domain. The internal wave pattern and the far-field output characteristics of several designed resonant modes are numerically calculated. From these results, it is confirmed that a variety of GRIN resonators are possible for a given conformal coordinate transformation.

• Bulletin of the Korean Chemical Society
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• v.29 no.7
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• pp.1349-1352
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• 2008

We report a novel patterning method for a homo-polymeric poly(3-hexylthiophene) (P3HT) nanofilm particularly capable of strong adhesion to a $SiO_2$ surface. An oxidized silicon wafer substrate was micro-contact printed with n-octadecyltrichlorosilane (OTS) monolayer, and subsequently its negative pattern was selfassembled with three different amino-functionalized alkylsilanes, (3-aminopropyl)trimethoxysilane (APS), N- (2-aminoethyl)-3-aminopropyltrimethoxy silane (EDAS), and (3-trimethoxysilylpropyl) diethylenetriamine (DETAS). Then, P3HT nanofilms were selectively grown on the aminosilane pre-patterned areas via the vapor phase polymerization method. To evaluate the adhesion, patterning, and the film itself, the PEDOT nanofilms and SAMs were investigated with a $Scotch^{(R)}$ tape test, contact angle analyzer, ATR-FT-IR, and optical and atomic force microscopes. The evaluation showed that the newly developed all bottom-up process can offer a simple and inexpensive patterning method for P3HT nanofilms robustly adhered to an oxidized Si wafer surface by the mediation of $FeCl_3$ and amino-functionalized alkylsilane SAMs.

• Journal of the Semiconductor & Display Technology
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• v.15 no.2
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• pp.32-37
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• 2016

Sidewall angle (SWA) of an absorber stack in extreme ultraviolet lithography mask is considered to be $90^{\circ}$ ideally, however, it is difficult to obtain $90^{\circ}$ SWA because absorber profile is changed by complicated etching process. As the imaging performance of the mask can be varied with this SWA of the absorber stack, more complicated optical proximity correction is required to compensate for the variation of imaging performance. In this study, phase shift mask (PSM) is suggested to reduce the variation of imaging performance due to SWA change by modifying mask material and structure. Variations of imaging performance and lithography process margin depending on SWA were evaluated through aerial image and developed resist simulations to confirm the advantages of PSM over the binary intensity mask (BIM). The results show that the variations of normalized image log slope and critical dimension bias depending on SWA are reduced with PSM compared to BIM. Process margin for exposure dose and focus was also improved with PSM.

• Korean Journal of Veterinary Research
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• v.26 no.2
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• pp.265-276
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• 1986

The bovine serum factor influencing the growth of swine testicle (ST) cell and the END effect of hog cholera SN test was studied. Throughout the experimental studies. following results were obtained and summarized. 1. Bovine whole serum of 16(76.2%) and 4(19.0%) samples out of 21 have shown a positive ST cell growth and the END effect, respectively. However, all of 21(100%) and 8(38.1%) samples out of 21 serum supernatant fractions, prepared from the bovine whole serum, have shown positive ST cell growth and END effect, respectively. 2. In the SDS-polyacrylamide gel electrophoretic analysis of the bovine whole serum and the supernatant fractions, ST cell growth inhibiting factor was proved present in globulin fraction and in whole gel plate as a diffusible component. 3. The END ineffective component present in the whole serum and its supernatant fraction was proved to be BVDV neutralizing antibody. 4. The difference of osmolarity, optical density, pH, degree of precipitant formation following heat cold treatment, A/G ratio as we11 as electrophoretic pattern and NDV SN index of the samples were not correlated to the degree of 57 cell growth and to the END effectiveness.

• Proceedings of the KIEE Conference
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• 1994.07b
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• pp.1246-1249
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• 1994

Thin amorphous film of $a-Se_{75}Ge_{25}$ acts as a positive resist in ion beam lithography. Previously, we reported the optical characteristics of amorphous $Se_{75}Ge_{25}$ thin film by the low-energy ion beam exposure and presented analytically calculated values such as ion range, ion concentration and ion transmission coefficient, etc. As the calculated results of analytical calculation, the energy loss per unit distance by $Ga^+$ ion is about $10^3[keV/{\mu}m]$ and nearly constant for all energy range. Especially, the projected range and struggling for 80 [KeV] $Ga^+$ ion energy are 0.0425[${\mu}m$] and 0.020[${\mu}m$], respectively. Hear, we present the results of Monte-Carlo computer simulation of Ga ion scattering, exposure and development in $a-Se_{75}Ge_{25}$ resist film for focused ion beam(FIB) lithography. Monte-Carlo method is based on the simulation of individual particles through their successive collisions with resist atoms. By the summation of the scattering events occurring in a large number N(N>10000) of simulated trajectories within the resist, the distribution for the range parameters is obtained. Also, the deposited energy density and the development pattern by a Gaussian or a rectangular ion beam exposure can be obtained.